LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors S08-A SERIES SCRs 0.8 AMPERES RMS 600 VOLTS TO-92 (TO-226AA) FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits TO-92 DIM. Blocking Voltage to 600 Volts On- State Current Rating of 0.8 Amperes RMS at 80 MIN. MAX. A 4.45 4.70 High Surge Current Capability -- 10 Amperes B 4.32 5.33 Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design C 3.18 4.19 D 1.15 1.39 Immunity to dV/dt -- 20 V/us Minimum at Tj=110 E 2.42 2.66 F 12.7 ------ G 2.04 2.66 I 3.43 ----- Glass-Passivated Surface for Reliability and Uniformity Pb-Free Package All Dimensions in millimeter PIN ASSIGNMENT 1 Cathode 2 Gate 3 Anode MAXIMUM RATINGS (TJ= 25 unless otherwise noticed) Rating Symbol Value Unit VDRM, VRRM 600 Volts IT(RMS) 0.8 Amp ITSM 10 Amps It 0.415 As PGM 0.1 Watt PG(AV) 0.01 Watt IGM 1.0 Amp VGRM 5 Volts TJ -40 to +110 Tstg -40 to +150 Peak Repetitive Off- State Voltage (TJ= -40 to 110, Sine Wave, 50 to 60 Hz; Gate Open) S08U25-600A S08U50-600A S08M02-600A On-State RMS Current (TC = 80) 180 Conduction Angles Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25) 2 Circuit Fusing Consideration (t = 8.3 ms) Forward Peak Gate Power (TA = 25, Pulse Width 1.0 us) Forward Average Gate Power (TA = 25, t = 8.3 ms) Forward Peak Gate Current (TA = 25, Pulse Width 1.0 us) Reverse Peak Gate Voltage (TA = 25, Pulse Width 1.0 ms) Operating Junction Temperature Range @ Rate VRRM and VDRM Storage Temperature Range Notice: (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded 2 2 2 Rev.3, Oct-2010, KTXD18 RATING AND CHARACTERISTIC CURVES S08-A SERIES THERMAL CHARACTERISTICS Characteristic Thermal Resistance - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/16" from Case for 10 Seconds Symbol Value Unit RthJC RthJA 75 150 /W TL 260 ELECTRICAL CHARACTERISTICS (TJ=25unless otherwise noted) Characteristics Symbol Min Typ Max Unit IDRM IRRM ------- ------- 10 100 uA VTM ---- ---- 1.7 S08U25 ---- ---- 25 IGT S08U50 ---- ---- 50 S08M02 ---- ---- 200 ---- ---- 5 ---- ---- 10 ---- ---- 0.8 ---- ---- 1.2 ---- ---- 10 ---- ---- 15 OFF CHARACTERISTICS Peak Reptitive Forward or Reverse Blocking Current (VD=Rated VDRM and VRRM; RGK =1K Ohms) TJ=25 TJ=110 ON CHARACTERISTICS Peak Forward On-State Voltage (ITM= 1.6A Peak, Pulse Width 1.0ms, Duty Cycle 1%) Gate Trigger Current(VD= 7.0 Vdc,RL=100 Ohms) (1) Holding Current(VD= 7.0 Vdc, Intitiating Current = 20mA) Gate Trigger Voltage(VD= 7.0 Vdc,RL=100 Ohms) (1) Latch Current(VD= 7.0 Vdc, RL 100 Ohms) TJ =25 TJ =-40 TJ =25 TJ =-40 TJ =25 TJ =-40 IH VGT IL Volts uA mA Volts mA DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD=Rated VDRM,Exponential Waveform, PGK=1K Ohms, TJ=110 (1) RGK current is not included in measurement dv/dt 20 ---- ---- V/us RATING AND CHARACTERISTIC CURVES S08-A SERIES IT, INSTANTANEOUS ON-STATE CURRENT (AMP) 10 1 0.1 0 1 2 3 4 5 VT, INSTANTANE ON-STATE VOLTAGE(VOLTS) Figure 1. On-State Characteristics 6 RATING AND CHARACTERISTIC CURVES S08-A SERIES 0.8 VGT, GATE TRIGGER VOLTAGE 2.5 IGT(TJ) / IGT(25) 2 1.5 1 0.5 0.7 0.6 0.5 0 0.4 -40 -20 0 20 40 60 80 100 -40 -20 TJ JUNCTION TEMPERATURE() Figure 2. IGT(TJ) / IGT(25) versus TJ 20 40 60 80 100 1 IL, LATCHING CURRENT IH, HOLDING CURRENT 1 0.8 0.6 0.4 0.2 0.8 0.6 0.4 0.2 0 0 -40 -20 0 20 40 60 80 100 -40 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 TC, CASE TEMPERATURE() Figure 6. On-State Current Derating Curve -20 0 20 40 60 80 100 TJ JUNCTION TEMPERATURE() Figure 5. Typical IGT versus TJ 120 P(AV) ,AVERAGE POWER DISSIPATION (WATTS) TJ JUNCTION TEMPERATURE() Figure 4. Typical IGT versus TJ IT(RMS) ,RMS ON-STATE CURRENT (AMP) 0 TJ JUNCTION TEMPERATURE() Figure 3. Typical IGT versus TJ 1.0 0.9 0.8 0.7 0.6 TJ=25 0.5 0.4 TJ=125 0.3 0.2 0.1 0.0 0 0.2 0.4 0.6 IT(AV), AVERAGE ON-STATE CURRENT (AMP) Figure 7. Power Dissipation versus IT 0.8 Legal Disclaimer Notice S08-A SERIES Important Notice and Disclaimer LSC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. LSC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does LSC assume any liability for application assistance or customer product design. LSC does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of LSC. LSC products are not authorized for use as critical components in life support devices or systems without express written approval of LSC.