SEMICONDUCTOR
LITE-ON
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for
zero or negative gate voltage; positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant
current source such that the voltage ratings of the devices are exceeded
MAXIMUM RATINGS
(T
J
= 25
℃
unless otherwise noticed)
FEATURES
Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
Blocking Voltage to 600 Volts
On– State Current Rating of 0.8 Amperes RMS at 80
℃
High Surge Current Capability — 10 Amperes
Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
Immunity to dV/dt — 20 V/us Minimum at Tj=110
℃
Glass-Passivated Surface for Reliability and Uniformity
Pb-Free Package
Sensitive Gate
Sillicon Controlled Rectifiers
Reverse Blocking Thyristors
SCRs
0.8 AMPERES RMS
600 VOLTS
22
TO-92 (TO-226AA)
1 Cathode
2 Gate
3 Anode
PIN A SSIGNMENT
Rating Symbol Value Unit
Peak Repetitive Off– State Voltage (
T
J
= -40 to 110
℃
, Sine Wave, 50 to 60 Hz; Gate Open)
V
DRM
,
V
RRM
600 Volts
On-State RMS Current (
T
C
=
80
℃
) 180° Conduction Angles I
T(RMS)
0.8 Amp
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz,
T
J =
25
℃
) I
TSM
10 Amps
Circuit Fusing Consideration (t = 8.3 ms) I t 0.415 A s
Forward Peak Gate Power
(T
A
= 25
℃
, Pulse Width 1.0 us)
≦
P
GM
0.1 Watt
Forward Average Gate Power (
T
A
= 25
℃
, t = 8.3 ms) P
G(AV)
0.01 Watt
Forward Peak Gate Current (
T
A
= 25
℃
, Pulse Width
1.0 us
≦
) I
GM
1.0 Amp
Reverse Peak Gate Voltage (
T
A
= 25
℃
, Pulse Width 1.0 ms)
≦
V
GRM
5 Volts
Operating Junction Temperature Range @ Rate V
RRM
and V
DRM
T
J
-40 to +110
℃
Storage Temperature Range Tstg -40 to +150
℃
22
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for
zero or negative gate voltage; positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant
current source such that the voltage ratings of the devices are exceeded
Rev.3, Oct-2010, KTXD18
S08U25-600A
S08U50-600A
S08M02-600A
S08-A SERIES
All Dimensions in millimeter
TO-92
DIM. MIN. MAX.
A
C
D
E
F
G
B
4.45 4.70
5.33
4.32
3.18 4.19
1.39
1.15
2.42 2.66
12.7 ------
2.04 2.66
3.43
I-----
Characteristic Symbol Value Unit
Thermal Resistance - Junction to Case
- Junction to Ambient
R
thJC
R
thJA
75
150
℃
/W
Maximum Lead Temperature for Soldering Purposes 1/16" from Case for 10 Seconds
T
L
260
℃
Characteristics Symbol Min Typ Max Unit
Peak Reptitive Forward or Reverse Blocking Current T
J
=25
℃
(VD=Rated VDRM and VRRM; RGK =1K Ohms) T
J
=110
℃
I
DRM
I
RRM
----
----
----
----
10
100 uA
Critical Rate of Rise of Off-State Voltage
(V
D
=Rated V
DRM
,Exponential Waveform, PGK=1K Ohms, T
J
=110
℃
dv/dt 20 ---- ---- V/us
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
J
=25 unless otherwise noted)
℃
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
S08U25
---- ---- 25
S08U50
---- ---- 50
S08M02
---- ---- 200
T
J
=25℃
---- ---- 5
T
J
=-40℃
---- ---- 10
T
J
=25℃
---- ---- 0.8
T
J
=-40℃
---- ---- 1.2
T
J
=25℃
---- ---- 10
T
J
=-40℃
---- ---- 15
Peak Forward On-State Voltage
(ITM= ± 1.6A Peak, Pulse Width≦ 1.0ms, Duty Cycle≦ 1%) ---- 1.7 VoltsV
TM
----
Latch Current(VD= 7.0 Vdc, RL 100 Ohms) I
L
I
GT
Holding Current(VD= 7.0 Vdc, Intitiating Current = 20mA) I
H
Gate Trigger Voltage(VD= 7.0 Vdc,RL=100 Ohms) (1)
V
GT
Gate Trigger Current(VD= 7.0 Vdc,RL=100 Ohms) (1) uA
mA
Volts
mA
(1) R
GK
current is not included in measurement
RATING AND CHARACTERISTIC CURVES
S08-A SERIES
0.1
1
10
0123456
RATING AND CHARACTERISTIC CURVES
S08-A SERIES
VT, INSTANTANE ON-STATE VOLTAGE(VOLTS)
Figure 1. On-State Characteristics
IT, INSTANTANEOUS ON-STATE CURRENT (AMP)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 0.2 0.4 0.6 0.8
-40 -20 0 20 40 60 80 100
Figure 2. IGT(TJ) / IGT(25 ) versus TJ
℃
TJ JUNCTION TEMPERATURE( )
℃
0
0.5
1
1.5
2
2.5
IGT(TJ) / IGT(25 )℃
-40 -20 0 20 40 60 80 100
Figure 3. Typical IGT versus TJ
TJ JUNCTION TEMPERATURE( )
℃
0.4
0.5
0.6
0.7
0.8
VGT, GATE TRIGGER VOLTAGE
-40 -20 0 20 40 60 80 100
Figure 4. Typical IGT versus TJ
TJ JUNCTION TEMPERATURE( )
℃
0
0.2
0.4
0.6
0.8
1
IH, HOLDING CURRENT
-40 -20 0 20 40 60 80 100
Figure 5. Typical IGT versus TJ
TJ JUNCTION TEMPERATURE( )
℃
0
0.2
0.4
0.6
0.8
1
IL, LATCHING CURRENT
TC, CASE TEMPERATURE( )
℃
Figure 6. On-State Current Derating Curve
P(AV) ,AVERAGE POWER DISSIPATION (WATTS)
Figure 7. Power Dissipation versus IT
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
TJ=25
℃
TJ=125
℃
IT(RMS) ,RMS ON-STATE CURRENT (AMP)
0.0
0.2
0.4
0.6
0.8
1.0
0 20 40 60 80 100 120
RATING AND CHARACTERISTIC CURVES
S08-A SERIES
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S08-A SERIES
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