UPC3232TB - Renesas Electronics

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Old Company Name in Catalogs and Other Documents

On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas Electronics Corporation took over all the business of both

companies. Therefore, although the old company name remains in this document, it is a valid

Renesas Electronics document. We appreciate your understanding.

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April 1st, 2010

Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

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2005, 2006

DESCRIPTION

The

PC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners.

This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

FEATURES

• Low current : ICC = 26.0 mA TYP.

• Medium output power : PO (sat) = +15.5 dBm TYP. @ f = 1.0 GHz

: PO (sat) = +12.0 dBm TYP. @ f = 2.2 GHz

• High linearity : PO (1 dB) = +11.0 dBm TYP. @ f = 1.0 GHz

: PO (1 dB) = +8.5 dBm TYP. @ f = 2.2 GHz

• Power gain : GP = 32.8 dB MIN. @ f = 1.0 GHz

: GP = 33.5 dB MIN. @ f = 2.2 GHz

• Gain flatness :

∆

GP = 1.0 dB TYP. @ f = 1.0 to 2.2 GHz

• Noise figure : NF = 4 dB TYP. @ f = 1.0 GHz

: NF = 4.1 dB TYP. @ f = 2.2 GHz

• Supply voltage : VCC = 4.5 to 5.5 V

• Port impedance : input/output 50 Ω

APPLICATIONS

• IF amplifiers in LNB for DBS converters etc.

ORDERING INFORMATION

Part Number Order Number Package Marking Supplying Form

PC3232TB-E3

PC3232TB-E3-A 6-pin super minimold

(Pb-Free)

C3S • Embossed tape 8 mm wide

• Pin 1, 2, 3 face the perforation side of the tape

• Qty 3 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office

Part number for sample order:

PC3232TB

DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

BIPOLAR ANALOG INTEGRATED CIRCUIT

PC3232TB

5 V, SILICON GERMANIUM MMIC

MEDIUM OUTPUT POWER AMPLIFIER

Document No. PU10597EJ01V0DS (1st edition)

Date Published May 2006 NS CP(K)

Printed in Japan

PIN CONNECTIONS

Pin No. Pin Name

1 OUTPUT

2 GND

3 VCC

4 INPUT

5 GND

(Top View)

C3S

(Bottom View)

(Top View)

6 GND

PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

(TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)

Part No. PO (sat)

(dBm)

(dB)

ICC

(mA) Package Marking

PC2708TB +10.0 15.0 6.5 26 6-pin super minimold C1D

PC2709TB +11.5 23.0 5.0 25 C1E

PC2710TB +13.5 33.0 3.5 22 C1F

PC2776TB +8.5 23.0 6.0 25 C2L

PC3223TB +12.0 23.0 4.5 19 C3J

PC3225TB +15.5 Note 32.5 Note 3.7 Note 24.5 C3M

PC3226TB +13.0 25.0 5.3 15.5 C3N

PC3232TB +15.5 32.8 4.0 26 C3S

Note

PC3225TB is f = 0.95 GHz

Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.

Data Sheet PU10597EJ01V0DS

PC3232TB

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Conditions Ratings Unit

Supply Voltage VCC TA = +25°C 6.0 V

Total Circuit Current ICC TA = +25°C 45 mA

Power Dissipation PD TA = +85°C Note 270 mW

Operating Ambient Temperature TA −40 to +85 °C

Storage Temperature Tstg −55 to +150 °C

Input Power Pin TA = +25°C 0 dBm

Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB

RECOMMENDED OPERATING RANGE

Parameter Symbol Conditions MIN. TYP. MAX. Unit

Supply Voltage VCC 4.5 5.0 5.5 V

Operating Ambient Temperature TA −40 +25 +85 °C

Data Sheet PU10597EJ01V0DS 3

PC3232TB

ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Circuit Current ICC No input signal 20 26 32 mA

Power Gain 1 GP1 f = 0.25 GHz, Pin = −35 dBm 29 31.5 34 dB

Power Gain 2 GP2 f = 1.0 GHz, Pin = −35 dBm 30 32.8 35.5

Power Gain 3 GP3 f = 1.8 GHz, Pin = −35 dBm 31 33.8 37

Power Gain 4 GP4 f = 2.2 GHz, Pin = −35 dBm 30.5 33.5 36.5

Power Gain 5 GP5 f = 2.6 GHz, Pin = −35 dBm 29 32.2 35.5

Power Gain 6 GP6 f = 3.0 GHz, Pin = −35 dBm 27 30.7 34

Gain Flatness

∆

GP f = 1.0 to 2.2 GHz, Pin = −35 dBm − 1.0 − dB

K factor 1 K1 f = 1.0 GHz, Pin = −35 dBm − 1.3 − −

K factor 2 K2 f = 2.2 GHz, Pin = −35 dBm − 1.9 − −

Saturated Output Power 1 PO (sat) 1 f = 1.0 GHz, Pin = 0 dBm +13 +15.5 − dBm

Saturated Output Power 2 PO (sat) 2 f = 2.2 GHz, Pin = −5 dBm +9.5 +12 −

Gain 1 dB Compression Output Power 1

PO (1 dB) 1 f = 1.0 GHz +8 +11 − dBm

Gain 1 dB Compression Output Power 2

PO (1 dB) 2 f = 2.2 GHz +6 +8.5 −

Noise Figure 1 NF1 f = 1.0 GHz − 4 4.8 dB

Noise Figure 2 NF2 f = 2.2 GHz − 4.1 4.9

Isolation 1 ISL1 f = 1.0 GHz, Pin = −35 dBm 36 41 − dB

Isolation 2 ISL2 f = 2.2 GHz, Pin = −35 dBm 38 45 −

Input Return Loss 1 RLin1 f = 1.0 GHz, Pin = −35 dBm 9.5 13 − dB

Input Return Loss 2 RLin2 f = 2.2 GHz, Pin = −35 dBm 10 14.5 −

Output Return Loss 1 RLout1 f = 1.0 GHz, Pin = −35 dBm 12 15.5 − dB

Output Return Loss 2 RLout2 f = 2.2 GHz, Pin = −35 dBm 12 15 −

Input 3rd Order Distortion Intercept Point 1

IIP31 f1 = 1 000 MHz, f2 = 1 001 MHz − −9 − dBm

Input 3rd Order Distortion Intercept Point 2

IIP32 f1 = 2 200 MHz, f2 = 2 201 MHz − −15.5 −

Output 3rd Order Distortion Intercept Point 1

OIP31 f1 = 1 000 MHz, f2 = 1 001 MHz − +23.5 − dBm

Output 3rd Order Distortion Intercept Point 2

OIP32 f1 = 2 200 MHz, f2 = 2 201 MHz − +18 −

2nd Order Intermodulation Distortion IM2 f1 = 1 000 MHz, f2 = 1 001 MHz,

Pout = −5 dBm/tone

− 50 − dBc

2nd Harmonic

2f0 f0 = 1.0 GHz, Pout = −15 dBm − 70 − dBc

Data Sheet PU10597EJ01V0DS

PC3232TB

TEST CIRCUIT

1 000 pF

39 pF

Feed-through capacitor

100 pF

2, 5, 6

33 pF

OUT

GND

1 000 pF

47 nH

68 nH

560 Ω

l1l2

Length of microstrip line : l1 = 2.25 mm

l2 = 2.75 mm

The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

COMPONENTS OF TEST CIRCUIT FOR MEASURING

ELECTRICAL CHARACTERISTICS

Type Value

R1 Chip Resistance 560 Ω

L1 Chip Inductor 47 nH

L2 Chip Inductor 68 nH

C1 Chip Capacitor 100 pF

C2 Chip Capacitor 33 pF

C3, C4 Chip Capacitor 1 000 pF

C5 Chip Capacitor 39 pF

C6 Feed-through Capacitor 1 000 pF

INDUCTOR FOR THE OUTPUT PIN

The internal output transistor of this IC, to output medium power. To supply current for output transistor, connect

an inductor between the VCC pin (pin 3) and output pin (pin 1). Select inductance, as the value listed above.

The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum

voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get

enough gain. In this case, large inductance and Q is suitable (Refer to the following page).

CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS

Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for

the input and output pins.

The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias

can be supplied against VCC fluctuation.

The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial

impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus

perform as high pass filters, suppressing low frequencies to DC.

To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under

10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are

determined by equation, C = 1/(2 πRfc).

Data Sheet PU10597EJ01V0DS 5

PC3232TB

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD

C6: Feed-through Capacitor

L1 R1

2.75 mm

2.25 mm

Notes

1. 19 × 21.46 × 0.51 mm double sided copper clad RO4003C

(Rogers) board.

2. Back side: GND pattern

3. Au plated on pattern

4. : Through holes

5. L1, L2: FDK’s products

COMPONENT LIST

Value Size

R1 560 Ω 1005

L1 47 nH 1005

L2 68 nH 1005

C1 100 pF 1608

C2 33 pF 1608

C3, C4 1 000 pF 1005

C5 39 pF 1608

C6 1 000 pF Feed-through

Capacitor

Data Sheet PU10597EJ01V0DS

PC3232TB

TYPICAL CHARACTERISTICS (TA = +25°C, VCC = 5.0 V, ZS = ZL = 50 Ω, unless otherwise specified)

00 123456

+25˚C

–40˚C

TA = +85˚C

No Input Signal

–20

–40

–60

0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1

= 4.5 to 5.5 V

1: –40.01 dB

0.25 GHz

2: –41.32 dB

1 GHz

3: –46.39 dB

2.2 GHz

4: –48.59 dB

2.6 GHz

Frequency f (GHz)

ISOLATION vs. FREQUENCY

Isolation ISL (dB)

CIRCUIT CURRENT vs. SUPPLY VOLTAGE

Circuit Current ICC (mA)

Supply Voltage VCC (V)

–50 –25 0 25 50 75 100

No Input Signal

CURCUIT CURRENT vs.

OPERATING AMBIENT TEMPERATURE

Circuit Current ICC (mA)

Operating Ambient Temperature TA (°C)

–10

–20

0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1

5.5 V

= 4.5 V

5.0 V

1: –12.35 dB

0.25 GHz

2: –12.47 dB

1 GHz

3: –13.77 dB

2.2 GHz

4: –14.45 dB

2.6 GHz

INPUT RETURN LOSS vs. FREQUENCY

Frequency f (GHz)

Input Return Loss RLin (dB)

–10

–20

0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1

4.5 V

= 5.5 V 5.0 V

1: –14.38 dB

0.25 GHz

2: –15.52 dB

1 GHz

3: –14.84 dB

2.2 GHz

4: –16.50 dB

2.6 GHz

Frequency f (GHz)

OUTPUT RETURN LOSS vs. FREQUENCY

Output Return Loss RLout (dB)

0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 2.5 2.8 3.1

4.5 V

VCC = 5.5 V 5.0 V

1: 31.56 dB

0.25 GHz

2: 32.71 dB

1 GHz

3: 33.37 dB

2.2 GHz

4: 32.14 dB

2.6 GHz

Frequency f (GHz)

POWER GAIN vs. FREQUENCY

Power Gain GP (dB)

234

Remark The graphs indicate nominal characteristics.

Data Sheet PU10597EJ01V0DS 7

PC3232TB

–5

–10

–15

–20

–5

–10

–15

–20

–50 –40 –30 –20 –10 0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

–50 –40 –30 –20 –10 0

4.5 V

= 5.5 V

f = 1.0 GHz

= +85˚C

+25˚C

–

40˚C

f = 2.2 GHz

4.5 V

= 5.5 V

5.0 V

= 4.5 V

5.5 V

5.0 V

NOISE FIGURE vs. FREQUENCY

Frequency f (GHz)

Noise Figure NF (dB)

NOISE FIGURE vs. FREQUENCY

Frequency f (GHz)

Noise Figure NF (dB)

OUTPUT POWER vs. INPUT POWER

Output Power P

out

(dBm)

Input Power P

(dBm)

OUTPUT POWER vs. INPUT POWER

Output Power P

out

(dBm)

Input Power P

(dBm)

Remark The graphs indicate nominal characteristics.

Data Sheet PU10597EJ01V0DS

PC3232TB

f1 = 1 000 MHz

f2 = 1 001 MHz

Pout

IM3

out

Pout

IM3

4.5 V

= 5.5 V

5.0 V

2f0

3f0

out

2f0

3f0

f1 = 2 200 MHz

f2 = 2 201 MHz

f1 = 1 000 MHz

f2 = 1 001 MHz

f = 1 000 MHz

f1 = 1 000 MHz

f2 = 1 001 MHz

f = 2 200 MHz

OUTPUT POWER, 2ND HARMONIC,

3RD HARMONIC vs. INPUT POWER

OUTPUT POWER, 2ND HARMONIC,

3RD HARMONIC vs. INPUT POWER

Output Power P

out

(dBm)

2nd Harmonic 2f0 (dBc)

3rd Harmonic 3f0 (dBc)

OUTPUT POWER, IM3 vs. INPUT POWER

Output Power P

out

(dBm)

3rd Order Intermodulation Distortion IM

(dBm)

Input Power P

(dBm)

OUTPUT POWER, IM

3 vs. INPUT POWER

Output Power P

out

(dBm)

3rd Order Intermodulation Distortion IM

(dBm)

Input Power P

(dBm)

OUTPUT POWER, IM

2 vs. INPUT POWER

Output Power P

out

(dBm)

2nd Order Intemodulation Distortion IM

(dBm)

Input Power P

(dBm)

2 vs. INPUT POWER

2nd Order Intermodulation Distortion IM

(dBc)

Input Power P

(dBm)

Input Power P

(dBm)

Input Power P

(dBm)

Output Power P

out

(dBm)

2nd Harmonic 2f0 (dBc)

3rd Harmonic 3f0 (dBc)

–10

–20

–30

–40

–50

–60

–70

–45 –40 –35 –30 –25 –20 –15 –10 –5

–10

–20

–30

–40

–50

–60

–70

–50 –40 –30 –20 –10 0 10

–10

–20

–30

–40

–50

–60

–70

–80

–90

–60 –50 –40 –30 –20 –10 0

–10

–20

–30

–40

–50

–60

–70

–80

–90

–60 –50 –40 –30 –20 –10 0

–50 –45 –40 –35 –30 –25 –20

–10

–20

–30

–40

–50

–60

–70

–45 –40 –35 –30 –25 –20 –15 –10 –5

Remark The graphs indicate nominal characteristics.

Data Sheet PU10597EJ01V0DS 9

PC3232TB

S-PARAMETERS (TA = +25°C, VDD = VCC = 5.0 V, Pin = −35 dBm)

S11−FREQUENCY

1 : 81.254 Ω –9.457 Ω 67.317 pF

250 MHz

2 : 46.533 Ω

–23.434 Ω

1 GHz

3 : 35.576 Ω

10.355 Ω

2.2 GHz

4 : 45.572 Ω

17.93 Ω

2.6 GHz

START : 100.000 000 MHz STOP : 3 100.000 000 MHz

S22−FREQUENCY

1 : 44.955 Ω 17.123 Ω 10.901 nH

250 MHz

2 : 48.875 Ω

–16.785 Ω

1 GHz

3 : 51.383 Ω

18.615 Ω

2.2 GHz

4 : 66.562 Ω

5.5 Ω

2.6 GHz

START : 100.000 000 MHz STOP : 3 100.000 000 MHz

Data Sheet PU10597EJ01V0DS

PC3232TB

S-PARAMETERS

S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a

microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave] → [Device Parameters]

URL http://www.ncsd.necel.com/microwave/index.html

Data Sheet PU10597EJ01V0DS 11

PC3232TB

PACKAGE DIMENSIONS

6-PIN SUPER MINIMOLD (UNIT: mm)

0.9±0.1

0.7

0 to 0.1

0.15

+0.1

–0.05

0.2

+0.1

–0.05

2.0±0.2

1.3

0.650.65

1.25±0.1

2.1±0.1

0.1 MIN.

Data Sheet PU10597EJ01V0DS

PC3232TB

NOTES ON CORRECT USE

(1) Observe precautions for handling because of electro-static sensitive devices.

(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).

All the ground terminals must be connected together with wide ground pattern to decrease impedance difference.

(3) The bypass capacitor should be attached to the VCC line.

(4) The inductor (L) must be attached between VCC and output pins. The inductance value should be determined in

accordance with desired frequency.

(5) The DC cut capacitor must be attached to input and output pin.

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered and mounted under the following recommended conditions. For soldering

methods and conditions other than those recommended below, contact your nearby sales office.

Soldering Method Soldering Conditions Condition Symbol

Infrared Reflow Peak temperature (package surface temperature) : 260°C or below

Time at peak temperature : 10 seconds or less

Time at temperature of 220°C or higher : 60 seconds or less

Preheating time at 120 to 180°C : 120±30 seconds

Maximum number of reflow processes : 3 times

Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below

IR260

Wave Soldering Peak temperature (molten solder temperature) : 260°C or below

Time at peak temperature : 10 seconds or less

Preheating temperature (package surface temperature) : 120°C or below

Maximum number of flow processes : 1 time

Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below

WS260

Partial Heating Peak temperature (terminal temperature) : 350°C or below

Soldering time (per side of device) : 3 seconds or less

Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below

HS350

Caution Do not use different soldering methods together (except for partial heating).

Data Sheet PU10597EJ01V0DS 13

PC3232TB

The information in this document is current as of May, 2006. The information is subject to change

without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or

data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all

products and/or types are available in every country. Please check with an NEC Electronics sales

representative for availability and additional information.

No part of this document may be copied or reproduced in any form or by any means without the prior

written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may

appear in this document.

NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual

property rights of third parties by or arising from the use of NEC Electronics products listed in this document

or any other liability arising from the use of such products. No license, express, implied or otherwise, is

granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.

Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

circuits, software and information in the design of a customer's equipment shall be done under the full

responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by

customers or third parties arising from the use of these circuits, software and information.

While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,

customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To

minimize risks of damage to property or injury (including death) to persons arising from defects in NEC

Electronics products, customers must incorporate sufficient safety measures in their design, such as

redundancy, fire-containment and anti-failure features.

NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and

"Specific".

The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-

designated "quality assurance program" for a specific application. The recommended applications of an NEC

Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of

each NEC Electronics product before using it in a particular application.

The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC

Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications

not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to

determine NEC Electronics' willingness to support a given application.

(Note)

•

M8E 02. 11-1

(1)

(2)

"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its

majority-owned subsidiaries.

"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as

defined above).

Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment

and industrial robots.

Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support).

Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.

"Standard":

"Special":

"Specific":

Data Sheet PU10597EJ01V0DS

PC3232TB

0604

NEC Compound Semiconductor Devices Hong Kong Limited

E-mail: contact@ncsd-hk.necel.com

Hong Kong Head Office TEL: +852-3107-7303 FAX: +852-3107-7309

Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859

Korea Branch Office TEL: +82-2-558-2120 FAX: +82-2-558-5209

NEC Electronics (Europe) GmbH http://www.eu.necel.com/

TEL: +49-211-6503-0 FAX: +49-211-6503-1327

California Eastern Laboratories, Inc. http://www.cel.com/

TEL: +1-408-988-3500 FAX: +1-408-988-0279

Compound Semiconductor Devices Division

NEC Electronics Corporation

URL: http://www.ncsd.necel.com/

For further information, please contact

PC3232TB