TIP150, TIP151, TIP152
NPN SILICON POWER DARLINGTONS
1
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●80 W at 25°C Case Temperature
●7 A Continuous Collector Current
●10 A Peak Collector Current
●Maximum VCE(sat) of 2 V at IC = 5 A
●ICEX(sus) 7 A at rated V(BR)CEO
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 5 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
TIP150
TIP151
TIP152
VCBO
300
350
400
V
Collector-emitter voltage (IB = 0)
TIP150
TIP151
TIP152
VCEO
300
350
400
V
Emitter-base voltage VEBO 8V
Continuous collector current IC7A
Peak collector current (see Note 1) ICM 10 A
Continuous base current IB1.5 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 80 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2W
Operating junction temperature range Tj-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL260 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
TIP150, TIP151, TIP152
NPN SILICON POWER DARLINGTONS
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CBO
Collector-base
breakdown voltage IC = 1 mA IE = 0
TIP150
TIP151
TIP152
300
350
400
V
V(BR)CEO
Collector-emitter
breakdown voltage IC = 10 mA
(see Note 4)
IB = 0
TIP150
TIP151
TIP152
300
350
400
V
ICEO
Collector-emitter
cut-off current
VCE =300 V
VCE = 350 V
VCE = 400 V
IB=0
IB=0
IB=0
TIP150
TIP151
TIP152
250
250
250
µA
ICEX(sus)
Collector-emitter
sustaining current VCLAMP = V(BR)CEO 7A
IEBO
Emitter cut-off
current VEB = 8 V IC=0 15 mA
hFE
Forward current
transfer ratio
VCE = 5 V
VCE = 5 V
VCE = 5 V
IC= 2.5 A
IC= 5A
IC= 7A
(see Notes 4 and 5)
150
50
15
VCE(sat)
Collector-emitter
saturation voltage
IB = 10 mA
IB = 100 mA
IB = 250 mA
IC= 1A
IC= 2A
IC= 5A
(see Notes 4 and 5)
1.5
1.5
2
V
VBE(sat)
Base-emitter
saturation voltage
IB = 100 mA
IB = 250 mA
IC= 2A
IC= 5A (see Notes 4 and 5) 2.2
2.3 V
VEC
Parallel diode
forward voltage IE = 7 A IB= 0 (see Notes 4 and 5) 3.5 V
hfe
Small signal forward
current transfer ratio VCE = 5 V IC= 0.5 A f = 1 kHz 200
|hfe|Small signal forward
current transfer ratio VCE = 5 V IC= 0.5 A f = 1 MHz 10
Cob Output capacitance VCB = 10 V IE= 0 f = 1 MHz 100 pF
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.56 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
CθCThermal capacitance of case 0.9 J/°C
inductive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
tsv Voltage storage time
IC = 5 A
V(clamp) = V(BR)CEO
IB(on) = 250 mA RBE = 47 Ω
3.9 µs
tsi Current storage time 4.7 µs
trv Voltage transition time 1.2 µs
tti Current transition time 1.2 µs
txo Cross-over time 2.0 µs
TIP150, TIP151, TIP152
NPN SILICON POWER DARLINGTONS
3
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
PARAMETER MEASUREMENT INFORMATION
Figure 1. Functional Test Circuit
Figure 2. Functional Test Waveforms
Figure 3. Switching Test Circuit
Driver and
Current
Limiting
Circuit
0.22
µ
F
Vz
24 V
L = 7 mH
100
Ω
0.2
Ω
TUT
V
clamp
Collector
Emitter
Voltage
16.6 ms
11.6 ms
0
0
0
0
Input
Signal
Base
Current
Collector
Current
24 V
IB
IC
40 V 12 V
0.056
Ω
IRF140
1 k
Ω
47
Ω
TUT
BY205-600
7 mH
Vclamp
Adjust for
IB
= 10 VVin
TIP150, TIP151, TIP152
NPN SILICON POWER DARLINGTONS
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 4. Figure 5.
Figure 6. Figure 7.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·4 1·0 10
hFE - Typical DC Current Gain
10
100
1000
10000 TCD150AA
VCE = 5 V
tp = 300 µs, duty cycle <2%
TC = 125°C
TC = 25°C
TC = -30°C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·4 1·0 10
VCE(sat) - Collector-Emitter Saturation Voltage - V
0·1
1·0
10 TCD150AB
IC / IB = 20
tp = 300 µs, duty cycle < 2%
TC = 125°C
TC = 25°C
TC = -30°C
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·4 1·0 10
VBE(sat) - Base-Emitter Saturation Voltage - V
1·0
1·5
2·0
2·5
3·0 TCP150AC
TC = -30°C
TC = 25°C
TC = 125°C
IC / IB = 20
tp = 300µs, duty cycle < 2%
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
TC - Case Temperature - °C
-50 -25 0 25 50 75 100 125
ICEO - Collector Cut-off Current - µA
1·0
10
100
1000 TCD150AD
VCE = 400 V
IB = 0
TIP150, TIP151, TIP152
NPN SILICON POWER DARLINGTONS
5
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 8.
THERMAL INFORMATION
Figure 9.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0·01
0.1
1·0
10
100 SAD150AA
TIP150
TIP151
TIP152
tp = 0.1 ms
tp = 1 ms
tp = 5 ms
DC Operation
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 25 50 75 100 125 150
Ptot - Maximum Power Dissipation - W
0
20
40
60
80
100 TID150AA
