To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR PA1500B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The PA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver. (in millimeters) 4.2 MAX. * 4 V driving is possible * Large Current and Low On-state Resistance ID(DC) = 3 A RDS(on)1 0.18 MAX. (VGS = 10 V, ID = 2 A) RDS(on)2 0.24 MAX. (VGS = 4 V, ID = 2 A) * Low Input Capacitance Ciss = 200 pF TYP. * Surge Absorber, built in 2.5 TYP. FEATURES 10.5 MAX. 31.5 MAX. 10.0 MIN. 1 2 3 4 5 6 7 8 9 10 11 12 2.54 TYP. 0.70.1 1.40.1 0.50.1 ORDERING INFORMATION 1.4 TYP. ELECTRODE CONNECTION 1, 5, 8, 12 GATE Type Number PA1500BH 2, 4, 9, 11 DRAIN, ANODE Package 12 Pin SIP 6, 7 SOURCE 3, 10 CATHODE CONNECTION DIAGRAM ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage VDSS Note 1 60 Gate to Source Voltage VGSS Note 2 20 Drain Current (DC) ID(DC) 3.0 Drain Current (pulse) ID(pulse) Note 3 12 Repetitive peak Reverse Voltage VRRM Note 4 65 Diode Forward Current IF(av) Note 4 3.0 Total Power Dissipation PT1 Note 5 28 Total Power Dissipation PT2 Note 6 4.0 Channel Temperature TCH 150 Storage Temperature Tstg -55 to 150 Single Avalanche Current IAS Note 7 3.0 Single Avalanche Energy EAS Note 7 0.9 Notes 1. VGS = 0 2. VDS = 0 3. PW 10 s, Duty Cycle 1 % 4. Rating of Surge Absorber 5. 4 Circuits, TC = 25 C 6. 4 Circuits, TA = 25 C 7. Starting TCH = 25 C, V DD = 30 V, VGS = 20 RG = 25 , L = 100 H V V A/unit A/unit V A/unit W W C C A mJ 2 D5 4 D6 D1 RG 1 D2 RG 5 ZD 6 ZD 9 10 D7 D1 to D4 D5 to D8 ZD RG 11 D8 D3 RG 8 D4 RG 12 ZD V 0, 3 : : : : ZD 7 Body Diode Surge Absorber Gate to Source Protection Diode Gate Input Resistance 330 TYP. The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Document No. G10597EJ2V0DS00 (2nd edition) Date Published December 1995 P Printed in Japan (c) 1995 PA1500B ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Leakage Current IDSS VDS = 60 V, VGS = 0 10 A Gate Leakage Current IGSS VGS = 20 V, VDS = 0 10 A Gate Cutoff Voltage VGS(off) VDS = 10 V, ID = 1.0 mA 1.0 2.0 V Forward Transfer Admittance | Yfs | VGS = 10 V, ID = 2.0 A 2.0 Drain to Source On-State RDS(on)1 VGS = 10 V, ID = 2.0 A 0.10 0.18 Resistance RDS(on)2 VGS = 4.0 V, ID = 2.0 A 0.14 0.24 Input Capacitance Ciss VDS = 10 V, VGS = 0, f = 1.0 MHz 200 pF Output Capacitance Coss 150 pF Reverse Transfer Capacitance Crss 55 pF 20 ns 100 ns Turn-on Delay Time S *= 30 V, * td(on) ID = 2.0 A, VGS = 10 V, VDD Rise Time tr RL = 15 Turn-off Delay Time td(off) 735 ns Fall Time tf 350 ns Total Gate Charge QG 13 nC Gate to Source Charge QGS 2 nC Gate to Drain Charge QGD 4.7 nC Body Diode Forward Voltage VF(S-D) 1.0 V VGS = 10 V, ID = 3.0 A, VDD = 48 V IF = 3 A, VGS = 0 SURGE ABSORBER (Diode, builtin) 1 Unit Repetitive peak Reverse Current IRRM VR = 65 V 10 A Diode Forward Voltage VF IF = 3.0 A 1.5 V Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time DUT L Rin = 25 DUT VGS RL PG VGS 50 VDD Rin Rin = 10 PG. VGS = 20 V 0 Wave Form 0 90 % IAS VDS VDD Gate Charge DUT IG = 2 mA PG. 2 ID 0 50 RL VDD 0 10 % 10 % Wave Form t Starting TCH Test Circuit 3 90 % ID VGS ID 90 % VDD ID BVDSS VGS (on) 10 % t = 1 s Duty Cycle 1 % td (on) tr ton td (off) tf toff PA1500B TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 6 4 PT - Total Power Dissipation - W ,,, ,, , PT - Total Power Dissipation - W Laed Print Circuit Boad 5 30 Under same dissipation in each circuit NEC PA1500BH TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 4 Circuits operation 3 Circuits operation 2 Circuits operation 3 1 Circuit operation 2 1 0 50 100 150 Under same dissipation in each circuit 4 Circuits operation 3 Circuits operation 20 2 Circuits operation 1 Circuit operation 10 TC is grease Temperature on back surface 0 50 100 150 TA - Ambient Temperature - C TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA ID(Pulse) ) 0V 10 V d( 1 S= R PW G ite ) (on Lim ID(DC) = 10 0 1 DC 1 1 m s 10 DS TC = 25 C 0.1 Single Pulse 0.1 dT - Percentage of Rated Power - % ID - Drain Current - A 100 50 m m s s m s 10 100 80 60 40 20 0 100 40 60 80 100 120 140 160 VDS - Drain to Source Voltage - V TC - Case Temperature - C FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 12 Pulsed 10 10 1.0 ID - Drain Current - A ID - Drain Current - A 20 TA = 125C 75 C 25 C -25 C 0.1 Pulsed VGS = 20 V 10 V VGS = 4 V 8 6 4 2 0 1 2 3 4 5 VGS - Gate to Source Voltage - V 6 0 1 2 3 4 VDS - Drain to Source Voltage - V 3 PA1500B TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W 1 000 Single Pulse. For each Circuit Rth(CH-A) 4Circuits 3Circuits 2Circuits 1Circuit 100 Rth(CH-C) 10 1.0 0.1 100 1m 10 m 100 m 1 10 100 1 000 100 10 VDS = 10 V Pulsed TA = -25 C 25 C 75 C 125 C 1.0 1 0.1 10 1.0 RDS(on) - Drain to Source On-State Resistance - m ID - Drain Current - A 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 300 200 VGS = 4 V VGS = 10 V 100 0 0.1 1.0 ID - Drain Current - A 10 Pulsed 700 600 500 400 ID = 0.6 A 2A 3A 300 200 100 0 20 10 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cutoff Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - m PW - Pulse Width - sec VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 -50 0 50 100 TCH - Channel Temperature - C 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 300 VGS = 4 V VGS = 10 V 100 ID = 2 A 0 -50 Pulsed 10 1.0 VGS = 10 V 0.1 0.01 0 100 50 150 VGS = 0 0 TCH - Channel Temperature -C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 f = 1 MHz Ciss 100 Coss Crss 10 0.1 1 10 1 000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 1 000 td(off) tf tr 100 td(on) VDD .=. 30 V VGS = 10 V RG = 10 10 0.1 100 1.0 VDS - Drain to Source Voltage - V 1.0 10 ID - Drain Current - A 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery time - ns di/dt = 50 A/ s VGS = 0 100 10 0.1 10 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000 1.5 1.0 0.5 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12 60 ID = 3 A VGS 10 VDD = 12 V 30 V 48 V 8 40 6 4 20 2 VDS 0 2 4 6 8 10 12 14 0 16 VGS - Gate to Source Voltage - V 200 SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Diode Forward Current - A RDS(on) - Drain to Source On-State Resistance - m PA1500B Qg - Gate Charge - nC 5 PA1500B SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100 Energy Derating Factor - % IAS - Single Avalanche Energy - mJ 10 IAS = 3 A EA S =0 .9 1.0 mJ VDD = 30 V VGS = 20 V 0 RG = 25 Starting TCH = 25 C 0.1 10 100 1m 10 m L - Inductive Load - H VDD = 30 V RG = 25 VGS = 20 V 0 IAS 3.0 A 80 60 40 20 0 25 50 75 100 125 150 Starting TCH - Starting Channel Temperature - C REFERENCE Document Name 6 Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual IEI-1207 Semiconductor device package manual IEI-1213 Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide MF-1134 Power MOS FET features and application switching power supply TEA-1034 Application circuits using Power MOS FET TEA-1035 Safe operating area of Power MOS FET TEA-1037 PA1500B [MEMO] 7 PA1500B No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2