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©
1995
DATA SHEET
COMPOUND FIELD EFFECT POWER TRANSISTOR
µ
PA1500B
N-CHANNEL POWER MOS FET ARRAY
SWITCHING USE
DESCRIPTION
The
µ
PA1500B is N-channel Power MOS FET Array
that built in 4 circuits and surge absorber designed for
solenoid, motor and lamp driver.
FEATURES
• 4 V driving is possible
• Large Current and Low On-state Resistance
ID(DC) = ±3 A
RDS(on)1 ≤ 0.18 Ω MAX. (VGS = 10 V, ID = 2 A)
RDS(on)2 ≤ 0.24 Ω MAX. (VGS = 4 V, ID = 2 A)
• Low Input Capacitance Ciss = 200 pF TYP.
• Surge Absorber, built in
ORDERING INFORMATION
Type Number Package
µ
PA1500BH 12 Pin SIP
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage VDSS Note 1 60 V
Gate to Source Voltage VGSS Note 2 ±20 V
Drain Current (DC) ID(DC) ±3.0 A/unit
Drain Current (pulse) ID(pulse) Note 3 ±12 A/unit
Repetitive peak Reverse Voltage
VRRM Note 4 65 V
Diode Forward Current IF(av) Note 4 3.0 A/unit
Total Power Dissipation PT1 Note 5 28 W
Total Power Dissipation PT2 Note 6 4.0 W
Channel Temperature TCH 150 ˚C
Storage Temperature Tstg –55 to 150 ˚C
Single Avalanche Current IAS Note 7 3.0 A
Single Avalanche Energy EAS Note 7 0.9 mJ
Notes 1. VGS = 0
2. VDS = 0
3. PW ≤ 10
µ
s, Duty Cycle ≤ 1 %
4. Rating of Surge Absorber
5.
4 Circuits, T
C
= 25 ˚C
6. 4 Circuits, TA = 25 ˚C
7.
Starting T
CH
= 25 ˚C, V
DD
= 30 V, V
GS
= 20 V → 0,
RG = 25 Ω, L = 100
µ
H
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Document No. G10597EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeters)
CONNECTION DIAGRAM
234
D
6D5
D2
RG
D1
RG
ZDZD
1
6
5
91011
D
8D7
D4
RG
D3
RG
ZDZD
8
7
12
D
1
to D
4
D
5
to D
8
Z
D
R
G
: Body Diode
: Surge Absorber
: Gate to Source Protection Diode
: Gate Input Resistance 330 Ω TYP.
31.5 MAX. 4.2 MAX.
123456789101112
2.54 TYP. 0.7±0.1 1.4±0.1 0.5±0.1 1.4 TYP.
2.5 TYP.
10.5 MAX.10.0 MIN.
ELECTRODE CONNECTION
1, 5, 8, 12
2, 4, 9, 11
6, 7
3, 10
GATE
DRAIN, ANODE
SOURCE
CATHODE
2
µ
PA1500B
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Leakage Current IDSS VDS = 60 V, VGS = 0 10
µ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10
µ
A
Gate Cutoff Voltage VGS(off) VDS = 10 V, ID = 1.0 mA 1.0 2.0 V
Forward Transfer Admittance | Yfs |VGS = 10 V, ID = 2.0 A 2.0 S
Drain to Source On-State RDS(on)1 VGS = 10 V, ID = 2.0 A 0.10 0.18 Ω
Resistance RDS(on)2 VGS = 4.0 V, ID = 2.0 A 0.14 0.24 Ω
Input Capacitance Ciss VDS = 10 V, VGS = 0, f = 1.0 MHz 200 pF
Output Capacitance Coss 150 pF
Reverse Transfer Capacitance Crss 55 pF
Turn-on Delay Time td(on) ID = 2.0 A, VGS = 10 V, VDD = 30 V, 20 ns
Rise Time trRL = 15 Ω100 ns
Turn-off Delay Time td(off) 735 ns
Fall Time tf350 ns
Total Gate Charge QGVGS = 10 V, ID = 3.0 A, VDD = 48 V 13 nC
Gate to Source Charge QGS 2nC
Gate to Drain Charge QGD 4.7 nC
Body Diode Forward Voltage VF(S-D) IF = 3 A, VGS = 0 1.0 V
SURGE ABSORBER (Diode, builtin) 1 Unit
Repetitive peak Reverse Current
IRRM VR = 65 V 10
µ
A
Diode Forward Voltage VFIF = 3.0 A 1.5 V
Test Circuit 3 Gate Charge
V
GS
= 20 V→ 0
PG
R
in
= 25 Ω
50 Ω
DUT L
V
DD
Test Circuit 1 Avalanche Capability
PG. R
in
= 10 Ω
DUT
R
L
V
DD
Test Circuit 2 Switching Time
R
in
PG.
I
G
= 2 mA
50 Ω
DUT
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
CH
V
GS
0
t = 1 s
Duty Cycle ≤ 1 %
t
V
GS
Wave Form
I
D
Wave Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d
(on)
t
r
t
d
(off)
t
f
µ
·
·
3
µ
PA1500B
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Volta
g
e - V
I
D
- Drain Current - A
0.1
1.0
10
100 Pulsed
0
T
A
= 125˚C
75 ˚C
25 ˚C
-25 ˚C
25
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
- Drain Current - A
0.1
0.1
1
100
1 10 100
T
C
= 25 ˚C
Single Pulse
R
DS(on)
Limited (V
GS
= 10 V)
I
D(Pulse)
I
D(DC)
PW = 1 ms
10 ms
50 ms
100 ms
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Volta
g
e - V
I
D
- Drain Current - A
0234
6
12
1
Pulsed
V
GS
= 20 V
10 V
1346
T
C
- Case Temperature - ˚C
P
T
- Total Power Dissipation - W
050 100 150
30
20
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
4 Circuits operation
2 Circuits operation
3 Circuits operation
1 Circuit operation
T
A
- Ambient Temperature - ˚C
P
T
- Total Power Dissipation - W
050 100 150
6
4
2
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
4 Circuits operation
2 Circuits operation
3 Circuits operation
1
3
5
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - ˚C
dT - Percentage of Rated Power - %
020 40 60 80 100 120 140 160
20
40
60
80
100
DC
1 Circuit operation
Under same
dissipation in
each circuit Under same
dissipation in
each circuit
10
10
8
4
2
V
GS
= 4 V
Laed
Print
Circuit
Boad
,
,,
,,
,
NEC
PA1500BH
T
C
is grease
Temperature on back surface
µ
4
µ
PA1500B
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-State Resistance - mΩ
010
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
CH
- Channel Temperature - ˚C
V
GS(off)
- Gate to Source Cutoff Voltage - V
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-State Resistance - mΩ
100
0.1
V
DS
= 10 V
Pulsed
0.1 1.0
1.0
10
100
10
100
20
Pulsed
200
1.0 10
Pulsed
0
1.0
V
DS
= 10 V
I
D
= 1 mA
–50 0 50 100 150
0
1
200
0.5
1.5
2.0
300
400
500
600
700
I
D
= 0.6 A
2 A
3 A
300
V
GS
= 4 V
V
GS
= 10 V
T
A
= -25 ˚C
25 ˚C
75 ˚C
125 ˚C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - sec
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
0.1
1.0
10
1 000
1 m 10 m 100 m 1 10 100 1 000
Single Pulse.
For each Circuit
R
th(CH-C)
R
th(CH-A)
4Circuits
3Circuits
2Circuits
1Circuit
100
µ
5
µ
PA1500B
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
CH
- Channel Temperature -˚C
R
DS(on)
- Drain to Source On-State Resistance - mΩ
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
SD
- Diode Forward Current - A
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
10
0.1
0
–50
100
050 100 150
I
D
= 2 A 0.010
0.1
1.0
10
0.5
Pulsed
100
1 000
1.0 10 100
V
GS
- Gate to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
D
- Drain Current - A
t
rr
- Reverse Recovery time - ns
di/dt = 50 A/ s
V
GS
= 0
10
0.1
100
1 000
1.0 10 100
1.0 1.5
V
DD
=
30 V
V
GS
= 10 V
R
G
= 10 Ω
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
g
- Gate Char
g
e - nC
V
DS
- Drain to Source Voltage - V
04 8 12 162 6 10 14
20
40
60
2
4
6
8
10
12
0
200
300
V
GS
= 4 V
V
GS
= 10 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.1
100
1 000
1 10 100
V
GS
= 0
f = 1 MHz
C
iss
C
oss
C
rss
V
GS
V
DD
= 12 V
30 V
48 V
V
DS
t
d(off)
t
r
t
f
t
d(on)
V
GS
= 10 V
V
GS
= 0
I
D
= 3 A
.
.
µ
6
µ
PA1500B
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
CH
- Starting Channel Temperature - ˚C
Energy Derating Factor - %
025
20
80
50 75 100 125 150
V
DD
= 30 V
R
G
= 25 Ω
V
GS
= 20 V → 0
I
AS
≤ 3.0 A
100
60
40
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
AS
- Single Avalanche Energy - mJ
1.0
10
0.1 100 1 m
10 10 m
I
AS
= 3 A
E
AS
= 0.9 mJ
V
DD
= 30 V
V
GS
= 20 V → 0
R
G
= 25Ω
Starting T
CH
= 25 ˚C
µ
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual IEI-1207
Semiconductor device package manual IEI-1213
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide MF-1134
Power MOS FET features and application switching power supply TEA-1034
Application circuits using Power MOS FET TEA-1035
Safe operating area of Power MOS FET TEA-1037
7
µ
PA1500B
[MEMO]
2
µ
PA1500B
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
