File No. 313 URC Solid State Division Power Transistors 2N5262 RCA-2N5262* is a silicon n-p-n, epitaxial planar transistor with characteristics which make it excep- tionally desirable for high-speed, high-voltage, high- current switching applications. In addition, the 2N5262 features very short turn-on and turn-off times and low saturation voltages. It is also controlled for freedom from second breakdown under both forward-bias and reverse-bias conditions, when operated within specified maximum ratings. The 2N5262 meets the requirements of the basic military specification MIL-S-19500, and is hermetically sealed in a metal low-profile JEDEC TO-39 package. RCA-2N5262 is primarily intended for use as a driver for ''2-1/2D'" coincident-current and word-organ- ized magnetic-memory systems, and in the other critical industrial applications requiring switching of large cur- rents through inductive loads. * Developmental number TA-7238 is a reduced-height version of the former developmental number TA-2626. Maximum Ratings, Absolute-Maximum Values COLLECTOR-TO-BASE VOLTAGE, VcBo .. 75 max. COLLECTOR-TO-EMITTER VOLTAGE, VcgkO 50 max. PrP rac< EMITTER-TO-BASE VOLTAGE, VEBO....- 5 max. Continuous . 2... ee es 2 max. Instantaneous (See Fig. 4). ....... 0.65. 3 max. TRANSISTOR DISSIPATION, Pr: For case f up to 25C .......---- 5 max. Ww temperatures? t above 25C ........ Derate at 28.5 mw/C For ambient { to 25C 1... ee. ee 1 max. Ww temperatures { above 25C ......... Derate at 5.7 mw/C TEMPERATURE RANGE: Storage and Operating (Junction) ...... LEAD TEMPERATURE (During Soldering): At distances > 1/32"' from seating surface for 10 seconds max......-.-+-. 265 max. Cc -65 to +200 PC a Measured at center of seating surface. SILICON N-P-N HIGH-VOLTAGE ULTRA - HIGH - SPEED TRANSISTOR For Memory Driver Service in Data-Processing Equipment and Other Critical Industrial Applications Features @ high de beta at high collector current hg. = 25 min atlc = 1A controlled for safe operation without damage due to second breakdown under both forward-and reverse- bias conditions @ meets the requirements of Military Specification MIL-S-19500 @ excellent power handling capability Py = 5 W max. at Tc = 25C Pr = 1 W max. ot Ta= 25C e high switching speeds ot high currents- ton = 30 ns max. atlc = 1A tof ~ 60 ns max. atic = 1A high breakdown-voltage capabilities V(BR)CBO = 75 V min. V(BR)CEO = 50 V min. hermetically sealed low-profile TO-39 metal package @ low saturation voltage at high current Veg = 0.5 V typ. atic = 1A 134 11-72File No. 313 2N5262 ELECTRICAL CHARACTERISTICS, Ta = 25 C unless otherwise specified Characteristi symbol TEST CONDITIONS LIMIT u aracteristics mbois NITS y f | Vce | ic [le | ip 2N5262 MHz | Voits mA Min. | Typ. | Max. 60 - - 10 BA Collector-Cutoff Current ICES 30 - 0.4] 1 BA 304 - - | 100 uA Collector-to- Base Breakdown V(BR)CBO 01 15 110 ; V Collector-to-Emitter Breakdown . Voltage V(BRYCEO 10 50 56 V Emitter-to-Base Breakdow . Voltage " V(BR)EBO 0.1 5 8 v Collector-to-Emitter Saturation Vce(sat) 1000 100 . 0.6 | 0.8 Vv Basertoremter Saturation Vpe(sat) 1000 100 . ] 14 Vv Static F d Current 1 100 36 55 alic Forward Uurrent- h 1 500 40 65 FE Transfer Ratio i 1000" 95 45 Small-Signai Forward Current Transter Ratio hfe 100 10 50 2.5 3.5 Common-Base, Open-Circuit 0.1 to | VCB Output Capacitance Cob l = 10 0 9 2 oF Tum-On Time fon = Ic IBl | 'B2 Delay Time (tg + th) - 18 30 ns + Rise Time 1000 | 100 - Tum-Off Time loft = Storage Time (ty + tp) 1000 | 100 | -100 : 35 60 as + Fall Time * Pulsed condition - Pulse duration < 400 .s, duty factor < 0.03. Ta = 100C CIRCUIT USED TO MEASURE TURN-ON TIME (t,,) CIRCUIT USED TO MEASURE TURN-OFF TIME (+, 54) Vec 07 Vv Veco 107 Vv 1Onliow) o9v V Yout IN 1002 Vin tontio w) INPUT PULSE tr 22n5 tg 100ns (00a -26V INPUT PULSE = - Wom gps 92cs-13486R2 aF 1OOns 6B 92C8-13487R2 Fig.1 Fig.2 1352N5262 File No. 313 RATING CHART PER CENT OF RATED COLLECTOR CURRENT AT SPECIFIED COLLECTOR-TO-EMITTER VOLTAGE -100 150 50 100 CASE TEMPERATURE (To)C 92CS-14868 Fig.3 SECOND BREAKDOWN CHARACTERISTICS AND RATINGS CASE TEMPERATURE (Tc)=25C PULSE OPERATION CASE TEMPERATURE (Tc)=25%c NONREPETITIVE PULSE Ic MAX. (PULSED) Oe OC OPERATION THERMALLY LIMITED =-1) Tob o a w as c ad a = =z a Z = & F o w 4 Zz 3 3 x < wi a VeEo 810 6 COLLECTOR-TO-EMITTER VOLTS (Vee) PULSE OURATION SECONDS 928-1470 32S -1487) Fig.4 Fig.5 4 136File No. 313 + 2N5262 TYPICAL CHARACTERISTICS hg, vs le COMMON-EMITTER CIRCUIT, BASE INPUT. AMBIENT TEMPERATURE (Ta) = 25C FREQUENCY (f) = 1OO Mc/s Ao <8 wt Nn . = g 2 oO oa w ws a a ag Pu 32 a3 zo wo I a a < = wn -TRANSFER RATIO |hel 3 4 56789 2 3.4 56789 COLLECTOR MILLIAMPERES (Ic} 92CS-I3908RI Fig.6 Veglset) vs Ic/tg COMMON-EMITTER CIRCUIT, BASE INPUT. AMBIENT TEMPERATURE (Ta) 25C Weetsat] COLLECTOR-TO-EMITTER SATURATION 20 30 RATIO OF "ON" COLLECTOR CURRENT TO "TURN ON" BASE CURRENT (Ic/Ig) 92CS-13899 Fig.8 Vpe(sat) vs Ic COMMON-EMITTER CIRCUIT, BASE INPUT. RATIO OF COLLECTOR CURRENT TO BASE CURRENT (I/TIg) = 10 TO-EMITTER SATURATION VOLTS (Vge (sat oo COLLECTOR MILLIAMPERES (Ic) 92CS-13901 Fig.10 137 hee vs le COMMON-EMITTER CIRCUIT, BASE INPUT. COLLECTOR-TO-EMITTER VOLTS (Vcg} 2 STATIC FORWARD CURRENT- TRANSFER RATIO (heel PULSED 1000 COLLECTOR MILLIAMPERES (Ic) 9205-13902 Fig.7 Vcg(sat) vs Br/Be COMMON-~EMITTER CIRCUIT, BASE INPUT. AMBIENT TEMPERATURE (Ta) = 25C COLLECTOR-TO-EMIT TER SATURATION VOLTS Wee(sat)] t 2 3 4 RATIO OF TRANSISTOR here TO CIRCUIT hee 92c8-13900 Fig.9 COMMON~EMITTER CIRCUIT, BASE INPUT. AMBIENT TEMPERATURE (Ta } = 25C COLLECTOR-TO-EMITTER VOLTS (Voge) 40 +I -0.8 -06 -04 -0.2 Oo 0.2 O4 06 BASE-TO-EMITTER VOLTS (Vge) 92CS-13898 Fig.112N5262 File No. 313 TYPICAL CHARACTERISTICS t, vs Ic/Ipy t, v5 Ic/lpy COMMON-EMITTER CIRCUIT, BASE INPUT. AMBIENT TEMPERATURE (Ta) = 25C COLLECTOR AMPERES (Ic)}=l COMMON-EMITTER CIRCUIT, BASE INPUT. AMBIENT TEMPERATURE (Ti) = 25C o 2 8 8 8 a RATIO OF ON" COLLECTOR CURRENT TO wi $s TURN OFF" BASE CURRENT /Te2 S 3 a z | 2 = w wy 2 = - F Ww go a = x Oo 2 wo 3 10 20 30 RATIO OF "ON" COLLECTOR CURRENT TO RATIO OF "ON" COLLECTOR CURRENT TO TURN ON" BASE CURRENT (Ic/Ied TURN ON" BASE CURRENT (Ic/IB)) g2cs-i3869 Fig.12 Fig.13 1 ton V5 Ie tote V8 Io/IBy COMMON -EMITTER CIRCUIT, @ASE INPUT. AMBIENT TEMPERATURE (Ta) = 25C COLLECTOR AMPERES (Ic) #1 COMMON~EMITTER CIRCUIT, BASE INPUT. AMBIENT TEMPERATURE (Ta) = 25C o a z Qo a 3 8 RATIO OF "ON" COLLECTOR CURRENT TO = 2 TURN OFF" BASE CURRENT (Ic/Igg2) = 30 z Zz | = = + + 2 Ma = = E e t i P & e 9 io 30 " w RATIO OF ON" COLLECTOR CURRENT TO RATIO OF ON COLLECTOR CURRENT TO "TURN ON" BASE CURRENT (Ic/Ig)) TURN ON" BASE CURRENT (I/Igi) . 9205-13896 92CS-1389) Fig.14 Fig.15 Ices v5 Ta BYcert VS Ree COMMONEMITTER CIRCUIT, BASE INPUT INDUCTIVE LOAD AMBIENT TEMPERATURE (Ta)}=25 C COLLECTOR-EMITTER Zz joe | COLLECTOR MILLIAMPERES (I)}= 50 BASE-TO-EMITTER VOLTS (VaE =z r vey ~ BASE-TO-EMITTER RESISTANCE (Rge}+0 So BVcES=II4 V e = N = x 2 100 a AN 8 a ws > g roe 3 51 75 3 ay NI S gs I _|BVCEO =55 V = eS 1 10 TI & aS 50 5 ie 8 uo wy La 4 jad a Zz 2s oS 2 3 4 8 nt i AMBIENT TEMPERATURE (Ta) C 0 '0 witteR acsistance ir o 9208-13903 BASE-TO-EI BEI-2 o2cs-1an69 Fig.16 Fig.17 138File No. 313 2N5262 TYPICAL CHARACTERISTICS Cob v5 Yep Cip vs Yep COMMON BASE CIRCUIT, EMITTER OPEN AMBIENT TEMPERATURE (Ta)=25C FREQUENCY (#)20.1 MHz EMITTER CURRENT (I)=0 COMMON-BASE CIRCUIT, COLLECTOR OPEN. AMBIENT TEMPERATURE (Tq)*25C FREQUENCY (f}*0.1 MHz COLLECTOR CURRENT (I}=0 3 8 OUTPUT CAPACITANCE (Co,)PICOFARADS @ a a z So 2 a | a gS uw 9 z cr a a =< o tb > & < o 10 20 30 40 COLLECTORTOBASE VOLTS (Vcg) 1 2 4 cB 2cs~14ser EMITTER-TO-BASE VOLTS (Veg) 92$-13906 Fig.18 Fig.19 DIMENSIONAL OUTLINE 370 (339) 335 \e5i} - DIA 335 (88) 305 \775/-4 DIA. 100 (2.54) || } MIN. i95 (338) 75 \aa5 TERMINAL DIAGRAM Len SEATING PLANE Bottom View 125 [317 Goa(ars) 4 UJ U UJ Os (12.70) DETAILS OF OUT- adran, = OO Qs INE OPT! 200 3 LEADS (5.08) a 019 (482 (NOTE 3) O16 A07 (NOTE 2) _. 100 LEAD (2.54) INSULATING EYELETS 7*@ Ty "Tt Ts wr LEAD 1 EMITTER KL) > LEAD 2 BASE | ' LEAD 3 COLLECTOR, CASE QUTSIDE RADII 007 (0178) MAX. 45 034 (893 028 $93) NM 883 ($44) INDEX TAB { {NOTE 4) 92CS IOISORG Dimensions in Inches ond Millimeters Note i: Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions as indicated. Note 2: The specified lead diameter applies in the zone between 0.050" (1.27 mm) and 0.250" (6.35 mm} from the seat- ing plane. From 0.250" (6,35 mm) to the end of the lead a maximum diameter of 0.021 (0.533 mm) is held. Outside of these zones, the lead diameter is not controlled. Note 3: Leads having a maximum diameter of 0.019" (0.482 mm) ata jauging plane of 0.054" (1.372 mm) + 0.001 (0.025 mm) - 0.080 (0.000 mm) below seating plane shall be within 0.007 (0.178 mm) of their true position (location) relative to a maximum width of tab. Note 4: Measured from actual maximum diameter. Note 5: This zone is controlled for automatic handling. The variation in actual diameter within the zone shall not exceed 0.010 (0.25 mm). 139