4N32X3,-2,-1 4N32-3,-2,-1 LOW INPUT CURRENT PHOTODARLINGTON OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 6.4 6.2 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead form : - STD - G form VDE 0884 in SMD approval pending l EN60950 approved by SETI, reg. no. 157786-18 DESCRIPTION The 4N32-3,-2,-1 series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l Low input current 0.25mA IF l High CurrentTransfer Ratio (200% min) l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High BVCEO (55V min) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances OPTIONSM SURFACEMOUNT OPTION G 10.2 9.5 1 2 6 5 3 4 1.54 8.8 8.4 4.3 4.1 0.5 0.5 7.8 7.4 0.3 3.3 9.6 8.4 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 80mA 10V 105mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 55V 6V 150mW POWER DISSIPATION 5.08 max. 1.2 0.6 Dimensions in mm 2.54 1.4 0.9 Total Power Dissipation 250mW (derate linearly 3.3mW/C above 25C) 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 30/7/97 DB91023-AAS/A3 ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 10 1.2 Collector-emitter Breakdown (BVCEO) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note 2) 4N32-3 4N32-2 10 V V A IF = 20mA IR = 10A VR = 10V 100 V V V nA IC = 1mA (note 2) IC = 100A IE = 100A VCE = 10V 200 400 800 % % % 0.25mA IF , 1.0V VCE 0.5mA IF , 1.0V VCE 1.0mA IF , 1.0V VCE. 400 800 % % 0.5mA IF , 1.0V VCE 1.0mA IF , 1.0V VCE. % V V V VRMS VPK s s 1.0mA IF , 1.0V VCE. 0.25mA IF , 0.5mA IC 0.5mA IF , 2mA IC 1.0mA IF , 8mA IC (note 1) (note 1) VIO = 500V (note 1) VCE = 2V , IC = 10mA, R L= 100 55 55 6 4N32-1 800 Collector-emitter Saturation Voltage -3 -2 -1 Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr 60 Output Fall Time tf 53 Note 1 Note 2 30/7/97 1.4 TEST CONDITION 1.0 1.0 1.0 300 250 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB91023-AAS/A3 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage Collector current IC (mA) Collector power dissipation PC (mW) 200 150 100 50 10 I F = 1.0mA 8 TA = 25C 6 I F = 0.5mA 4 2 0 I F = 0.25mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature 1 2 3 4 5 Collector-emitter voltage VCE ( V ) Relative Current Transfer Ratio vs. Ambient Temperature Relative current transfer ratio 100 Forward current IF (mA) 80 60 40 20 0 1.5 IF = 1mA VCE = 1V 1.0 0.5 0 -30 0 25 50 75 100 125 -30 100 1200 1.2 IF = 1mA IC = 8mA 1.0 0.8 0.6 0.4 0.2 0 1000 800 600 400 200 VCE = 1V TA = 25 C 0 -30 0 25 50 75 Ambient temperature TA ( C ) 30/7/97 0 25 50 75 Ambient temperature TA ( C ) Current Transfer Ratio vs. Forward Current Collector-emitter Saturation Voltage vs. Ambient Temperature Current transfer ratio CTR (%) Collector-emitter saturation voltage VCE(SAT) (V) Ambient temperature TA ( C ) 100 0.1 0.2 0.5 1 2 Forward current IF (mA) 5 DB91023-AAS/A3