NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX 2N 1889 2N 1890 - LF amplification Amplificiation LF - Switching Commutation Maximum power dissipation VcEo 80 V 40 - 120 2N 1889 hoq(150 mA { 216(150 MA) 1 149. 300 2N 1890 { ooMN min 2N 1889 f T 60 MHz min 2N 1890 Case TO-39 See outline drawing CB-7 on last pages Dissipation de puissance maximale Boitier Voir dessin cot CB-7 dernires pages Prot (w) 3 iN CO 2 + ' > B NN Eom N Y tT Tambec) (1) ott Tease (ec) (2) Weight : 1,19 Collector is connected to case 0 50 100 150 8962010 Masse Le collecteur est refi au boftier ABSOLUTE RATINGS (LIMITING VALUES} T =+25C (Unless otherwise stated) VALEURS LIMITES ABSOLUES D'UTILISATION amb (Sauf indications contraires) Collector-base voltage Vv Tension collecteur-base CBO 100 Vv Collector-emitter voltage Tension collecteur-metteur Ree < 102 Voce R 80 v Collector-emitter voltage Tension collecteur-mettecr Vceo 60 Vv Emitter-base voltage Vv Tension metteur-base EBO v Power dissipation Tambo 25C Prot 0,8 Ww Dissipation de puissance T. = 25C 3 WwW case Junction temperature max T Temprature de jonction j 200 C min 65 c Storage temperature T Temprature de stockage stg max +200 C 78-47 1/3 THOMSON-CSF 2N 1889, 2N 1890 (Unless otherwise stated) STATIC CHARACTERISTICS T. =25C CARACTERISTIQUES STATIQUES amb (Sauf indications contraires) Test conditions ; Conditions de mesure Min. Typ. Max. Vep =78V 10 nA le =0 Collector-base cut-off current 'cBO Courant rsiduel collectour-bese Vop = 75V cl ie =0 ; 15 yA Tamb 150C Emitter-base cut-off current Veg =5V I Courant rsiduel metteur-bese ( c = oO EBO 10 nA Coliector-base breakdown voltage Ip =0 Vv Tension de claquage collecteur-base lo = 100 vA {(BR)CBO 100 Vv Ree = 102 BE Vv * Ig = 100 mA (BR)CER 80 Vv Collector-emitter breakdown voltage Tension de claquage collecteur-metteur Ip = * Ig =30mA ViBRICEO 60 Vv Emitter-base breakdown voltage | = V Tension de claquage metteur-base le = 100pA (BR)EBO 7 Vv Vege = 10V lo = 100 uA 2N 1889 | 20 hore Veg =10V CE 2N 1889| 35 | Iq =10mA Static forward current transfer ratio Valeur statique du rapport de transfert _ direct du courant v E> 10V h 7 2N 1889) 40 120 ie = 150 mA 2 c 2N 1890 | 100 300 Vog = 10V le owe Hote 2N 1888| 20 Tamb I =50mA Cc lg =5mA 12 Collector-emitter saturation voltage VoEsat Vv Tension de saturation collecteur-metteur Io =150mA Ip =15mA 5 le = 50 mA 09 Ip = 5mA * " Base-emitter saturation voltage VeEsat Vv Tension de saturation base-6metteur 1 =150mA lg =15mA 13 * Pulsed tp =200us 6 <1% impulsions 2/3 144 2N 1889, 2N 1890 STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES Tamb = 25C (Unless otherwise stated) (Sauf indications contraires} Test conditions Min. Typ. Max. Conditions de mesure Vee =5V 2N 1889 | 30 100 lo =1mA f =1kHz 2N 1890 50 200 Forward current transfer ratio hote Rapport de transfert direct du courant Voge = 10V 2N 1889 | 45 150 lg =5mA f =1kHz 2N 1890 | 70 300 Veg =5V cB lo =1ImA 20 30 Q f = 1 kHz Input impedance Naab impdance dentre Vog = 10V lo =5mA 4 8 2 f = 1 kHz Vo =5V 2N 1889 1,25 Ie =1mA 104 f = 1 kHz 2N 1890 1,5 Reverse voltage transfer ratio hy 2b Rapport de transfert inverse de fa tension Veg = 10V lo =5mA 15 104 f = 1 kHz Vee =5V 2N 1889 0,5 le =1mA BS f =1kHz 2N 1890 03 Output admittance hoop Admittance de sortie 05 Vop = 10V 2N 1889 , lo =5mA HS f =1kHz 2N 1890 0,3 t ' Voge = 10V 2N 1889 | 50 ransition frequency = f. H Frquence de transition lo = 50 mA T MHz f = 20 MHz 2N 1890 | 60 oO Ver =10V utput capacitance _ Capacit de sortie le =0 C22b 15 pF f =1MHz \ . Veg =0,5V Nput capacitance = c Capacit dentre Ie =0 11b 85 pF f = 1 MHz * Pulsed t, =200us 6 <1% impulsions Pp 3/3 145