VISHAY
TSOP344..SB1F
Document Number 82273
Rev. 1.1, 01-Jul-04
Vishay Semiconductors
www.vishay.com
1
16656
1
2
3
IR Receiver Modules for Remote Control Systems
Description
The TSOP344..SB1F - series are miniaturized receiv-
ers for infrared remote control systems. PIN diode
and preamplifier are assembled on lead frame, the
epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP344..SB1F is a
standard IR remote control receiver series for 3 V
supply voltage with excellent suppression of distur-
bance signals.
Features
• Photo detector and preamplifier in one package
• Internal filter for PCM frequency
• Improved shielding against electrical field
disturbance
• TTL and CMOS compatibility
• Output active low
• Supply voltage range: 2.7 V to 5.5 V
• Improved immunity against ambient light
• Enhanced suppression of IR disturbance signals
by narrow filt er
Mechanical Da ta
Pinning:
1 = OUT, 2 = GND, 3 = VS
Parts Table
Block Diagram Application Circuit
Part Carrier Frequency
TSOP34430SB1F 30 kHz
TSOP34433SB1F 33 kHz
TSOP34436SB1F 36 kHz
TSOP34437SB1F 36.7 kHz
TSOP34438SB1F 38 kHz
TSOP34440SB1F 40 kHz
TSOP34456SB1F 56 kHz
30 kΩ
2
3
1
V
S
OUT
Demo-
GND
Pass
AGCInput
PIN
Band dulator
Control Circuit
16833
C1=
4.7 µF
TSOPxxxx
OUT
GND
Circuit
µC
R1=100Ω
+V
S
GND
Transmitter
with
TSALxxxx V
S
R
1
+C
1
recommended to suppress power supply
disturbances.
V
O
The output voltage should not be hold continuously at
a voltage below V
O=
2.0 V by the external circuit.
17170
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2Document Number 82273
Rev. 1.1, 01-Jul-04
VISHAY
TSOP344..SB1F
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Supply Voltage (Pin 3) VS- 0.3 to + 6.0 V
Supply Current (Pin 3) IS3mA
Output Voltage (Pin 1) VO- 0.3 to VS +
0.3 V V
Output Current (Pin 1) IO10 mA
Junction Temperature Tj100 °C
Storage Temperature Range Tstg - 25 to + 85 °C
Operating Tem perature Range Tamb - 25 to + 85 °C
Power Consumption (Tamb ≤ 85 °C) Ptot 30 mW
Soldering Temperature t ≤ 10 s, 1mm from case Tsd 260 °C
Parameter Test condition Symbol Min Typ. Max Unit
Supply Current (Pin 3) Ev = 0, VS = 3 V ISD 0.7 1.2 1.5 mA
Ev = 40 klx, sunlight ISH 1.3 mA
Supply Voltage VS2.7 5.5 V
Transmission Distance Ev = 0, test signal see fig.1,
IR diode TSAL6200,
IF = 250 mA
d35m
Output Voltage Low (Pin 1) IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see fig. 1
VOSL 250 mV
Minimum Irradiance
(30 - 40 kHz) VS = 3 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min 0.2 0.4 mW/m2
Minimum Irradiance (56 kHz) VS = 3 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min 0.3 0.5 mW/m2
Minimum Irradiance
(30 - 40 kHz) VS = 5 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min 0.35 0.5 mW/m2
Minimum Irradiance (56 kHz) VS = 5 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min 0.45 0.6 mW/m2
Maximum Irradiance tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1 Ee max 30 W/m2
Directivity Angle of half transmission
distance ϕ1/2 ± 45 deg
VISHAY
TSOP344..SB1F
Document Number 82273
Rev. 1.1, 01-Jul-04
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Output Function
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 3. Output Function
E
e
T
t
pi
*
t
* t
pi
w10/fo is recommended for optimal function
V
O
V
OH
V
OL
t
16110
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
Output Signal
t
d1)
t
po2)
1)
7/f
0
<t
d
<15/f
0
2)
t
pi
–5/f
0
<t
po
< t
pi
+6/f
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.010000.0
E
e
– Irradiance ( mW/m
2
)
16908
Input Burst Duration
l= 950 nm,
optical test signal, fig.1
Output Pulse
t – Output Pulse Width ( ms )
po
E
e
t
V
O
V
OH
V
OL
t
600ms 600ms
T = 60 ms
T
on
T
off
94 8134
Optical Test Signal
Output Signal, ( see Fig.4 )
Figure 4. Output Pulse Diagram
Figure 5. Frequency Dependence of Responsivity
Figure 6. Sensitivity in Bright Ambient
T ,T – Output Pulse Width ( ms )
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.010000.0
E
e
– Irradiance ( mW/m
2
)
16909
Toff
l= 950 nm,
optical test signal, fig.3
Ton
on off
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.7 0.9 1.1 1.3
f/f
0
– Relative Frequency
16925
f = f
0
"5%
Df ( 3dB ) = f
0
/10
E / E – Rel. Responsivity
e min e
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01 0.10 1.00 10.00 100.00
E – Ambient DC Irradiance (W/m
2
)
16911
Correlation with ambient light sources:
10W/m
2
^1.4klx (Std.illum.A,T=2855K)
10W/m
2
^8.2klx (Daylight,T=5900K)
Ambient, l = 950 nm
E – Threshold Irradiance ( mW/m )
e min 2
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4Document Number 82273
Rev. 1.1, 01-Jul-04
VISHAY
TSOP344..SB1F
Vishay Semiconductors
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
0.0
0.5
1.0
1.5
2.0
0.1 1.0 10.0 100.0 1000.0
DV
sRMS
– AC Voltage on DC Supply Voltage (mV)
16912
f = f
o
f = 10 kHz
E – Threshold Irradiance ( mW/m )
e min 2
f = 1 kHz
f = 100 Hz
E – Threshold Irradiance ( mW/m )
0.0 0.4 0.8 1.2 1.6
0.0
0.4
0.8
1.2
2.0
E – Field Strength of Disturbance ( kV/m )
2.0
94 8147
1.6
e min 2
f(E) = f
0
0.0
0.1
0.2
0.3
0.4
10 30 50 70 90 110
Burst Length ( number of cycles / burst )
16917
f = 38 kHz, E
e
= 2 mW/m
2
Max. Envelope Duty Cycle
Figure 10. Sensitivity vs. Ambient Temperature
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Figure 12. Sensitivity vs. Supply Voltage
0.0
0.1
0.2
0.3
0.4
0.5
0.6
–30–150 153045607590
T
amb
– Ambient Temperature ( qC )
16918
Sensitivity in dark ambient
E – Threshold Irradiance ( mW/m )
e min 2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
750 850 950 1050 1150
18998
λ- Wavelength ( nm )
S ( ) - Relative Spectral Sensitivityλ
rel
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
S
– Supply Voltage ( V )
17185
E – Sensitivity ( mW/m )
2
e min
VISHAY
TSOP344..SB1F
Document Number 82273
Rev. 1.1, 01-Jul-04
Vishay Semiconductors
www.vishay.com
5
Suitable Data Format
The circuit of the TSOP344..SB1F is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 35
cycles a gap time of at least 14 cycles is necessary.
• For each bu rst whic h is longer than 0.9 ms a corre-
sponding gap time is necessary at some time in the
data stre a m. This gap tim e sho ul d be at l e as t 7 t im es
longer than the burst.
• Up t o 400 short bursts per second c an be recei ved
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, R-2000 Code.
When a disturbance signal is applied to the
TSOP344..SB1F it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppr ess ed by the TSO P3 44.. SB 1F are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation
(see Figure 14 or Figure 15).
Figure 13. Directivity
96 12223p2
0.4 0.2 0 0.2 0.4 0.6
0.6
0.9
0°
30°
10°20°
40°
50°
60°
70°
80°
1.0
0.8
0.7
d
rel
- Relative Transmission Distance
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
Figure 15. IR Signal from Fluorescent Lamp with high Modulation
0 5 10 15 20
Time ( ms )
16920
IR Signal
IR Signal from fluorescent
lamp with low modulation
0 5 10 15 20
Time ( ms )
16921
IR Signal
IR Signal from fluorescent
lamp with high modulation
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6Document Number 82273
Rev. 1.1, 01-Jul-04
VISHAY
TSOP344..SB1F
Vishay Semiconductors
Package Di mens ions in mm
16777
VISHAY
TSOP344..SB1F
Document Number 82273
Rev. 1.1, 01-Jul-04
Vishay Semiconductors
www.vishay.com
7
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Prot ection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to impr ove te chnical design
and may do so without further notic e.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
