© 2006 Microchip Technology Inc. DS21978C-page 1
MCP4011/2/3/4
Features
• Volatile Digital Potentiometer in SOT-23, SOIC,
MSOP and DFN packages
• 64 Taps: 63 Resistors with Taps to terminal A and
terminal B
• Simple Up/Down (U/D) Protocol
• Power-on Recall of Default Wiper Setting
- Custom POR wiper settings available
(contact factory)
• Resistance Values: 2.1 kΩ, 5 kΩ, 10 kΩ or 50 kΩ
• Low Tempco:
- Absolute (Rheostat): 50 ppm (0°C to 70°C typ.)
- Ratiometric (Potentiometer): 10 ppm (typ.)
• Low Wiper Resistance: 75Ω (typ.)
• High-Voltage Tolerant Digital Inputs: Up to 12.5V
• Low-Power Operation: 1 µA Max Static Current
• Wide Operating Voltage Range:
- 1.8V to 5.5V - Device Operation
- 2.7V to 5.5V - Resistor Characteristics
Specified
• Extended Temperature Range: -40°C to +125°C
• Wide Bandwidth (-3 dB) Operation:
- 4 MHz (typ.) for 2.1 kΩ device
Description
The MCP4011/2/3/4 devices are volatile, 6-bit Digital
Potentiometers that can be configured as either a
potentiometer or rheostat. The wiper setting is
controlled through a simple Up/Down (U/D) serial
interface.
Package Types
Block Diagram
Device Features
.
A
W
B
MCP4011
SOIC, MSOP, DFN
MCP4012
SOT-23-6
MCP4013
SOT-23-6
MCP4014
SOT-23-5
RheostatPotentiometer
Potentiometer Rheostat
A
VSS
W
1
2
3
4
8
7
6
5
VDD U/D
NC
B
CS
4
1
2
3
5W
CS
VDD
VSS
U/D
4
1
2
3
6A
CS
VDD
VSS
U/D
5W
AW
B
4
1
2
3
6A
CS
VDD
VSS
U/D
5W
A
W
W
A
BB
VDD
VSS
U/D
W
B
(Resistor Array)
Wiper Register
CS
A
2-Wire
Interface
and
Control
Logic
Power-Up
and
Brown-Out
Control
Device Wiper
Configuration
Memory
Type
POR Wiper
Setting
Resistance (typical)
# of
Steps
VDD
Operating
Range (2)
Control
Interface
WiperLock™
Technology
Options (kΩ)Wiper
(Ω)
MCP4011 Potentiometer
(1) RAM Mid-Scale 2.1, 5.0, 10.0, 50.0 75 64 1.8V to 5.5V U/D No
MCP4012 Rheostat RAM Mid-Scale 2.1, 5.0, 10.0, 50.0 75 64 1.8V to 5.5V U/D No
MCP4013 Potentiometer RAM Mid-Scale 2.1, 5.0, 10.0, 50.0 75 64 1.8V to 5.5V U/D No
MCP4014 Rheostat RAM Mid-Scale 2.1, 5.0, 10.0, 50.0 75 64 1.8V to 5.5V U/D No
Note 1: Floating either terminal (A or B) allows the device to be used in Rheostat mode.
2: Analog characteristics (resistor) tested from 2.7V to 5.5V.
Low-Cost 64-Step Volatile Digital POT
MCP4011/2/3/4
DS21978C-page 2 © 2006 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDD ............................................................................................................. 6.5V
CS and U/D inputs w.r.t VSS.................................... -0.3V to 12.5V
A,B and W terminals w.r.t VSS..................... -0.3V to VDD + 0.3V
Current at Input Pins ..................................................±10 mA
Current at Supply Pins ...............................................±10 mA
Current at Potentiometer Pins ...................................±2.5 mA
Storage temperature .....................................-65°C to +150°C
Ambient temp. with power applied ................-55°C to +125°C
ESD protection on all pins ........... ≥ 4kV (HBM), ≥ 400V (MM)
Maximum Junction Temperature (TJ) . .........................+150°C
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
AC/DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all parameters apply across the specified operating ranges.
TA = -40°C to +125°C, 2.1 kΩ, 5kΩ, 10 kΩ and 50 kΩ devices. Typical specifications represent values for VDD = 2.7V to 5.5V,
VSS = 0V, TA = +25°C.
Parameters Sym Min Typ Max Units Conditions
Operating Voltage Range VDD 2.7 — 5.5 V
VDD —1.8 — VV
DD = 1.8V, CS:VIHH = 8.5V,
VIH = 1.8V, VIL = 0V,
U/D:VIH = 1.8V, VIL = 0V
CS Input Voltage VCS V
SS — 12.5 V The CS pin will be at one of three
input levels (VIL, VIH or VIHH).
(Note 6)
Supply Current IDD —45 — µA5.5V, CS = VSS, fU/D = 1 MHz
—15 — µA2.7V, CS
= VSS, fU/D = 1 MHz
— 0.3 1 µA Serial Interface Inactive
(CS = VIH, U/D = VIH)
Resistance
(± 20%)
RAB 1.68 2.1 2.52 kΩ-202 devices (Note 1)
4.0 5 6.0 kΩ-502 devices (Note 1)
8.0 10 12.0 kΩ-103 devices (Note 1)
40.0 50 60.0 kΩ-503 devices (Note 1)
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at VW with VA = VDD and VB = VSS. (-202 devices VA = 4V).
3: MCP4011/13 only, test conditions are: IW = 1.9 mA, code = 00h.
4: MCP4012/14 only, test conditions are:
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and temperature. See
Section 6.0 “Resistor” for additional information.
8: For voltages below 2.7V, refer to Section 2.0 “Typical Performance Curves”.
9: The MCP4011 is externally connected to match the configurations of the MCP4012 and MCP4014 and then tested.
Device
Resistance
Current at Voltage
Comments
5.5V 2.7V
2.1 kΩ2.25 mA 1.1 mA MCP4012 includes VWZSE
MCP4014 includes VWFSE
5kΩ1.4 mA 450 µA
10 kΩ450 µA 210 µA
50 kΩ90 µA 40 µA
© 2006 Microchip Technology Inc. DS21978C-page 3
MCP4011/2/3/4
Resolution N 64 Taps No Missing Codes
Step Resistance RS—RAB / 63 — Ω Note 6
Wiper Resistance (Note 3, Note 4) RW— 70 125 Ω5.5V
— 70 325 Ω2.7V
Nominal Resistance Tempco ΔR/ΔT — 50 — ppm/°C TA = -20°C to +70°C
— 100 — ppm/°C TA = -40°C to +85°C
— 150 — ppm/°C TA = -40°C to +125°C
Ratiometeric Tempco ΔVWA/Δ
T
— 10 — ppm/°C MCP4011 and MCP4013 only,
code = 1Fh
Full-Scale Error (MCP4011/13 only) VWFSE -0.5 -0.1 +0.5 LSb Code 3Fh, 2.7V ≤ VDD ≤ 5.5V
Zero-Scale Error (MCP4011/13 only) VWZSE -0.5 +0.1 +0.5 LSb Code 00h, 2.7V ≤ VDD ≤ 5.5V
Monotonicity N Yes Bits
Resistor Terminal Input Voltage Range
(Terminals A, B and W)
VA,VW,
VB
Vss — VDD VNote 5, Note 6
Current through A, W or B IW—— 2.5 mANote 6
Leakage current into A, W or B IWL —100 — nAMCP4011 A = W = B = VSS
—100 — nAMCP4012/13 A = W = VSS
—100 — nAMCP4014 W = VSS
Capacitance (PA)C
AW — 75 — pF f =1 MHz, code = 1Fh
Capacitance (Pw)C
W— 120 — pF f =1 MHz, code = 1Fh
Capacitance (PB)C
BW — 75 — pF f =1 MHz, code = 1Fh
Bandwidth -3 dB BW — 4 — MHz -202
devices
Code = 1F,
output load = 30 pF
— 2 — MHz -502
devices
— 1 — MHz -103
devices
—200 —kHz -503
devices
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all parameters apply across the specified operating ranges.
TA = -40°C to +125°C, 2.1 kΩ, 5kΩ, 10 kΩ and 50 kΩ devices. Typical specifications represent values for VDD = 2.7V to 5.5V,
VSS = 0V, TA = +25°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at VW with VA = VDD and VB = VSS. (-202 devices VA = 4V).
3: MCP4011/13 only, test conditions are: IW = 1.9 mA, code = 00h.
4: MCP4012/14 only, test conditions are:
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and temperature. See
Section 6.0 “Resistor” for additional information.
8: For voltages below 2.7V, refer to Section 2.0 “Typical Performance Curves”.
9: The MCP4011 is externally connected to match the configurations of the MCP4012 and MCP4014 and then tested.
Device
Resistance
Current at Voltage
Comments
5.5V 2.7V
2.1 kΩ2.25 mA 1.1 mA MCP4012 includes VWZSE
MCP4014 includes VWFSE
5kΩ1.4 mA 450 µA
10 kΩ450 µA 210 µA
50 kΩ90 µA 40 µA
MCP4011/2/3/4
DS21978C-page 4 © 2006 Microchip Technology Inc.
Potentiometer Integral Non-linearity INL -0.5 ±0.25 +0.5 LSb MCP4011/13 only (Note 2)
Potentiometer Differential Non-linearity DNL -0.5 ±0.25 +0.5 LSb MCP4011/13 only (Note 2)
Rheostat Integral Non-linearity
MCP4011 (Note 4, Note 9)
MCP4012 and MCP4014 (Note 4)
R-INL -0.5 ±0.25 +0.5 LSb -202
devices
(2.1 kΩ)
5.5V
-8.5 +4.5 +8.5 LSb 2.7V (Note 7)
See Section 2.0 LSb 1.8V (Note 7, Note 8)
-0.5 ±0.25 +0.5 LSb -502
devices
(5 kΩ)
5.5V
-5.5 +2.5 +5.5 LSb 2.7V (Note 7)
See Section 2.0 LSb 1.8V (Note 7, Note 8)
-0.5 ±0.25 +0.5 LSb -103
devices
(10 kΩ)
5.5V
-3 +1 +3 LSb 2.7V (Note 7)
See Section 2.0 LSb 1.8V (Note 7, Note 8)
-0.5 ±0.25 +0.5 LSb -503
devices
(50 kΩ)
5.5V
-1 +0.25 +1 LSb 2.7V (Note 7)
See Section 2.0 LSb 1.8V (Note 7, Note 8)
Rheostat Differential Non-linearity
MCP4011 (Note 4, Note 9)
MCP4012 and MCP4014 (Note 4)
R-DNL -0.5 ±0.25 +0.5 LSb -202
devices
(2.1 kΩ)
5.5V
-1 +0.5 +2 LSb 2.7V (Note 7)
See Section 2.0 LSb 1.8V (Note 7, Note 8)
-0.5 ±0.25 +0.5 LSb -502
devices
(5 kΩ)
5.5V
-1 +0.25 +1.25 LSb 2.7V (Note 7)
See Section 2.0 LSb 1.8V (Note 7, Note 8)
-0.5 ±0.25 +0.5 LSb -103
devices
(10 kΩ)
5.5V
-1 0+1 LSb 2.7V (Note 7)
See Section 2.0 LSb 1.8V (Note 7, Note 8)
-0.5 ±0.25 +0.5 LSb -503
devices
(50 kΩ)
5.5V
-0.5 0+0.5 LSb 2.7V (Note 7)
See Section 2.0 LSb 1.8V (Note 7, Note 8)
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all parameters apply across the specified operating ranges.
TA = -40°C to +125°C, 2.1 kΩ, 5kΩ, 10 kΩ and 50 kΩ devices. Typical specifications represent values for VDD = 2.7V to 5.5V,
VSS = 0V, TA = +25°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at VW with VA = VDD and VB = VSS. (-202 devices VA = 4V).
3: MCP4011/13 only, test conditions are: IW = 1.9 mA, code = 00h.
4: MCP4012/14 only, test conditions are:
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and temperature. See
Section 6.0 “Resistor” for additional information.
8: For voltages below 2.7V, refer to Section 2.0 “Typical Performance Curves”.
9: The MCP4011 is externally connected to match the configurations of the MCP4012 and MCP4014 and then tested.
Device
Resistance
Current at Voltage
Comments
5.5V 2.7V
2.1 kΩ2.25 mA 1.1 mA MCP4012 includes VWZSE
MCP4014 includes VWFSE
5kΩ1.4 mA 450 µA
10 kΩ450 µA 210 µA
50 kΩ90 µA 40 µA
© 2006 Microchip Technology Inc. DS21978C-page 5
MCP4011/2/3/4
Digital Inputs/Outputs (CS, U/D)
Input High Voltage VIH 0.7 VDD ——V
Input Low Voltage VIL ——0.3V
DD V
High-Voltage Input Entry Voltage VIHH 8.5 — 12.5 (6) V Threshold for WiperLock™
Technology
High-Voltage Input Exit Voltage VIHH ——V
DD+0.8(6) V
CS Pull-up/Pull-down Resistance RCS —16 — kΩVDD = 5.5V, VCS = 3V
CS Weak Pull-up/Pull-down Current IPU —170 — µAV
DD = 5.5V, VCS = 3V
Input Leakage Current IIL -1 — 1 µA VIN = VDD
CS and U/D Pin Capacitance CIN,
COUT
—10 — pFf
C = 1 MHz, VDD ≥ 2.7V
RAM (Wiper) Value
Value Range N 0h — 3Fh hex
Default POR Setting N 1Fh hex
Power Requirements
Power Supply Sensitivity
(MCP4011 and MCP4013 only)
PSS — 0.0015 0.0035 %/% VDD = 4.5V to 5.5V, VA = 4.5V,
Code = 1Fh
— 0.0015 0.0035 %/% VDD = 2.7V to 4.5V, VA = 2.7V,
Code = 1Fh
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all parameters apply across the specified operating ranges.
TA = -40°C to +125°C, 2.1 kΩ, 5kΩ, 10 kΩ and 50 kΩ devices. Typical specifications represent values for VDD = 2.7V to 5.5V,
VSS = 0V, TA = +25°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: Resistance is defined as the resistance between terminal A to terminal B.
2: INL and DNL are measured at VW with VA = VDD and VB = VSS. (-202 devices VA = 4V).
3: MCP4011/13 only, test conditions are: IW = 1.9 mA, code = 00h.
4: MCP4012/14 only, test conditions are:
5: Resistor terminals A, W and B’s polarity with respect to each other is not restricted.
6: This specification by design.
7: Non-linearity is affected by wiper resistance (RW), which changes significantly over voltage and temperature. See
Section 6.0 “Resistor” for additional information.
8: For voltages below 2.7V, refer to Section 2.0 “Typical Performance Curves”.
9: The MCP4011 is externally connected to match the configurations of the MCP4012 and MCP4014 and then tested.
Device
Resistance
Current at Voltage
Comments
5.5V 2.7V
2.1 kΩ2.25 mA 1.1 mA MCP4012 includes VWZSE
MCP4014 includes VWFSE
5kΩ1.4 mA 450 µA
10 kΩ450 µA 210 µA
50 kΩ90 µA 40 µA
MCP4011/2/3/4
DS21978C-page 6 © 2006 Microchip Technology Inc.
FIGURE 1-1: Increment Timing Waveform.
CS
U/D
tLCUR
tLO
tHI
tLUC
W
tCSHI
tS
1/fUD
tCSLO
tS
tLCUF
tLUC tLCUF
SERIAL TIMING CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply across the specified operating ranges.
Extended (E): VDD = +1.8V to 5.5V, TA = -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
CS Low Time tCSLO 5——µs
CS High Time tCSHI 500 — — ns 2.7V ≤ VDD ≤ 5.5V
———ns1.8V ≤ VDD < 2.7V
U/D to CS Hold Time tLUC 500 — — ns 2.7V ≤ VDD ≤ 5.5V
750 — — ns 1.8V ≤ VDD < 2.7V
CS to U/D Low Setup Time tLCUF 500 — — ns
CS to U/D High Setup Time tLCUR 3——µs
U/D High Time tHI 500 — — ns
U/D Low Time tLO 500 — — ns
Up/Down Toggle Frequency fUD —— 1MHz
Wiper Settling Time tS0.5 — — µs 2.1 kΩ, CL = 100 pF
1——µs5kΩ, CL = 100 pF
2——µs10kΩ, CL = 100 pF
10 5 — µs 50 kΩ, CL = 100 pF
Wiper Response on Power-up tPU —200— ns
© 2006 Microchip Technology Inc. DS21978C-page 7
MCP4011/2/3/4
FIGURE 1-2: Decrement Timing Waveform.
CS
U/D
tLCUR
tHI
tLO
W
tS
tCSLO
tLUC
tCSHI
tLUC tLCUF
tS
1/fUD
SERIAL TIMING CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply across the specified operating ranges.
Extended (E): VDD = +1.8V to 5.5V, TA = -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
CS Low Time tCSLO 5——µs
CS High Time tCSHI 500 — — ns 2.7V ≤ VDD ≤ 5.5V
———ns1.8V ≤ VDD < 2.7V
U/D to CS Hold Time tLUC 500 — — ns 2.7V ≤ VDD ≤ 5.5V
750 — — ns 1.8V ≤ VDD < 2.7V
CS to U/D Low Setup Time tLCUF 500 — — ns
CS to U/D High Setup Time tLCUR 3——µs
U/D High Time tHI 500 — — ns
U/D Low Time tLO 500 — — ns
Up/Down Toggle Frequency fUD —— 1MHz
Wiper Settling Time tS0.5 — — µs 2.1 kΩ, CL = 100 pF
1——µs5kΩ, CL = 100 pF
2——µs10kΩ, CL = 100 pF
10 5 — µs 50 kΩ, CL = 100 pF
Wiper Response on Power-up tPU —200— ns
MCP4011/2/3/4
DS21978C-page 8 © 2006 Microchip Technology Inc.
FIGURE 1-3: High-Voltage Increment Timing Waveform.
CS
U/D
tHCUR
tLO
tHI
tHUC
W
tCSHI
tS
1/fUD
tCSLO
tS
tHCUF
tHUC tHCUF
5V
12V
SERIAL TIMING CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply across the specified operating ranges.
Extended (E): VDD = +1.8V to 5.5V, TA = -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
CS Low Time tCSLO 5——µs
CS High Time tCSHI 500 — — ns 2.7V ≤ VDD ≤ 5.5V
———ns1.8V ≤ VDD < 2.7V
U/D High Time tHI 500 — — ns
U/D Low Time tLO 500 — — ns
Up/Down Toggle Frequency fUD —— 1MHz
HV U/D to CS Hold Time tHUC 1.5 — — µs
HV CS to U/D Low Setup Time tHCUF 8——µs
HV CS to U/D High Setup Time tHCUR 4.5 — — µs
Wiper Settling Time tS0.5 — — µs 2.1 kΩ, CL = 100 pF
1——µs5kΩ, CL = 100 pF
2——µs10kΩ, CL = 100 pF
10 5 — µs 50 kΩ, CL = 100 pF
Wiper Response on Power-up tPU —200— ns
© 2006 Microchip Technology Inc. DS21978C-page 9
MCP4011/2/3/4
FIGURE 1-4: High-Voltage Decrement Timing Waveform.
CS
U/D
tHCUR
tHI
tLO
W
tS
tCSLO
tHUC
tCSHI
tHUC tHCUF
tS
5V
12V
1/fUD
SERIAL TIMING CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply across the specified operating ranges.
Extended (E): VDD = +1.8V to 5.5V, TA = -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
CS Low Time tCSLO 5——µs
CS High Time tCSHI 500 — — ns 2.7V ≤ VDD ≤ 5.5V
———ns1.8V ≤ VDD < 2.7V
U/D High Time tHI 500 — — ns
U/D Low Time tLO 500 — — ns
Up/Down Toggle Frequency fUD —— 1MHz
HV U/D to CS Hold Time tHUC 1.5 — — µs
HV CS to U/D Low Setup Time tHCUF 8——µs
HV CS to U/D High Setup Time tHCUR 4.5 — — µs
Wiper Settling Time tS0.5 — — µs 2.1 kΩ, CL = 100 pF
1——µs5kΩ, CL = 100 pF
2——µs10kΩ, CL = 100 pF
10 5 — µs 50 kΩ, CL = 100 pF
Wiper Response on Power-up tPU —200— ns
MCP4011/2/3/4
DS21978C-page 10 © 2006 Microchip Technology Inc.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, VDD = +2.7V to +5.5V, VSS =GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range TA-40 — +125 °C
Operating Temperature Range TA-40 — +125 °C
Storage Temperature Range TA-65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23 θJA —70—°C/W
Thermal Resistance, 6L-SOT-23 θJA —120—°C/W
Thermal Resistance, 8L-DFN (2x3) θJA —85—°C/W
Thermal Resistance, 8L-MSOP θJA —206—°C/W
Thermal Resistance, 8L-SOIC θJA —163—°C/W
© 2006 Microchip Technology Inc. DS21978C-page 11
MCP4011/2/3/4
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-1: Device Current (IDD) vs. U/D
Frequency (fU/D) and Ambient Temperature
(VDD = 2.7V and 5.5V).
FIGURE 2-2: Device Current (ISHDN) and
VDD. (CS = VDD) vs. Ambient Temperature.
FIGURE 2-3: CS Pull-up/Pull-down
Resistance (RCS) and Current (ICS) vs. CS Input
Voltage (VCS) (VDD = 5.5V).
FIGURE 2-4: CS High Input Entry/Exit
Threshold vs. Ambient Temperature and VDD.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
10
20
30
40
50
60
70
80
0.20 0.40 0.60 0.80 1.00
f
U/D
(MHz)
Device Current (I
DD
) (µA)
2.7V -40°C
2.7V 25°C
2.7V 85°C
2.7V 125°C
5.5V -40°C
5.5V 25°C
5.5V 85°C
5.5V 125°C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
-40 25 85 125
Ambient Temperature (°C)
Device Current (I
DD
) (µA)
VDD = 2.7V
VDD = 5.5V
0
50
100
150
200
250
987654321
V
CS
(V)
R
CS
(kOhms)
-1000
-800
-600
-400
-200
0
200
400
600
800
1000
I
CS
(µA)
RCS
ICS
0
2
4
6
8
10
12
-40 -20 0 20 40 60 80 100 120
Ambient Temperature (°C)
CS V
PP
Threshold (V)
1.8V Entry
2.7V Entry
5.5V Entry
1.8V Exit
2.7V Exit
5.5V Exit
MCP4011/2/3/4
DS21978C-page 12 © 2006 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-5: 2.1 k
Ω
Pot Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
FIGURE 2-6: 2.1 k
Ω
Pot Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 2.7V).
FIGURE 2-7: 2.1 k
Ω
Pot Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 1.8V).
FIGURE 2-8: 2.1 k
Ω
Rheo Mode – RW
(
Ω
), INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
FIGURE 2-9: 2.1 k
Ω
Rheo Mode – RW
(
Ω
), INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 2.7V).
FIGURE 2-10: 2.1 k
Ω
Rheo Mode – RW
(
Ω
), INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 1.8V).
0
20
40
60
80
100
120
140
0 8 16 24 32 40 48 56
Wiper Setting (decimal)
Wiper Resistance
(Rw)(ohms)
-0.1
-0.075
-0.05
-0.025
0
0.025
0.05
0.075
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
0
100
200
300
400
0 8 16 24 32 40 48 56
Wiper Setting (decimal)
Wiper Resistance
(Rw)(ohms)
-0.1
-0.05
0
0.05
0.1
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
0
100
200
300
400
500
600
700
800
900
1000
1100
0 8 16 24 32 40 48 56
Wiper Setting (decimal)
Wiper Resistance
(Rw)(ohms)
-2.75
-2.25
-1.75
-1.25
-0.75
-0.25
0.25
0.75
1.25
1.75
2.25
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
0
20
40
60
80
100
120
0 8 16 24 32 40 48 56
Wiper Setting (decimal)
Wiper Resistance
(Rw)(ohms)
-0.4
-0.2
0
0.2
0.4
0.6
0.8
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
0
100
200
300
400
500
0 8 16 24 32 40 48 56
Wiper Setting (decimal)
Wiper Resistance
(Rw)(ohms)
-2
0
2
4
6
8
10
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
0
100
200
300
400
500
600
700
800
900
1000
1100
0 8 16 24 32 40 48 56
Wiper Setting (decimal)
Wiper Resistance
(Rw)(ohms)
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
© 2006 Microchip Technology Inc. DS21978C-page 13
MCP4011/2/3/4
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-11: 2.1 k
Ω
– Nominal
Resistance (
Ω
) vs. Ambient Temperature and
VDD.
FIGURE 2-12: 2.1 k
Ω
– RWB (
Ω
) vs. Wiper
Setting and Ambient Temperature.
2000
2020
2040
2060
2080
-40 0 40 80 120
Ambient Temperature (°C)
Nominal Resistance (R
AB
)
(Ohms)
VDD = 2.7V
VDD = 5.5V
0
500
1000
1500
2000
2500
0 8 16 24 32 40 48 56 64
Wiper Setting (decimal)
R
WB
(Ohms)
-40°C
25°C
85°C
125°C
MCP4011/2/3/4
DS21978C-page 14 © 2006 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-13: 2.1 k
Ω
– Low-Voltage
Decrement Wiper Settling Time (VDD = 2.7V).
FIGURE 2-14: 2.1 k
Ω
– Low-Voltage
Decrement Wiper Settling Time (VDD = 5.5V).
FIGURE 2-15: 2.1 k
Ω
– Power-Up Wiper
Response Time.
FIGURE 2-16: 2.1 k
Ω
– Low-Voltage
Increment Wiper Settling Time (VDD = 2.7V).
FIGURE 2-17: 2.1 k
Ω
– Low-Voltage
Increment Wiper Settling Time (VDD = 5.5V).
WIPER
U/D
U/D
WIPER
WIPER
VDD
U/D
WIPER
WIPER
U/D
U/D
WIPER
© 2006 Microchip Technology Inc. DS21978C-page 15
MCP4011/2/3/4
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-18: 5k
Ω
Pot Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
FIGURE 2-19: 5k
Ω
Pot Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 2.7V).
FIGURE 2-20: 5k
Ω
Pot Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 1.8V).
FIGURE 2-21: 5k
Ω
Rheo Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V).
FIGURE 2-22: 5k
Ω
Rheo Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 2.7V).
FIGURE 2-23: 5k
Ω
Rheo Mode – RW (
Ω
),
INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 1.8V).
0
20
40
60
80
100
120
140
0 8 16 24 32 40 48 56
Wiper Setting (decimal)
Wiper Resistance
(Rw)(ohms)
-0.1
-0.075
-0.05
-0.025
0
0.025
0.05
0.075
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
0
50
100
150
200
250
300
350
400
450
0 8 16 24 32 40 48 56
Wiper Setting (decimal)
Wiper Resistance
(Rw)(ohms)
-0.125
-0.1
-0.075
-0.05
-0.025
0
0.025
0.05
0.075
0.1
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
0
500
1000
1500
2000
2500
0 8 16 24 32 40 48 56
Wiper Setting (decimal)
Wiper Resistance
(Rw)(ohms)
-2.75
-2.25
-1.75
-1.25
-0.75
-0.25
0.25
0.75
1.25
1.75
2.25
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
0
20
40
60
80
100
120
0 8 16 24 32 40 48 56
Wiper Setting (decimal)
Wiper Resistance
(Rw)(ohms)
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
0
100
200
300
400
500
600
0 8 16 24 32 40 48 56
Wiper Setting (decimal)
Wiper Resistance
(Rw)(ohms)
-1
0
1
2
3
4
5
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
0
500
1000
1500
2000
2500
0 8 16 24 32 40 48 56
Wiper Setting (decimal)
Wiper Resistance
(Rw)(ohms)
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
Error (LSb)
-40C Rw 25C Rw 85C Rw 125C Rw
-40C INL 25C INL 85C INL 125C INL
-40C DNL 25C DNL 85C DNL 125C DNL
INL
DNL
RW
MCP4011/2/3/4
DS21978C-page 16 © 2006 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C, VDD = 5V, VSS = 0V.
FIGURE 2-24: 5k
Ω
– Nominal Resistance
(
Ω
) vs. Ambient Temperature and VDD.
FIGURE 2-25: 5k
Ω
– RWB (
Ω
) vs. Wiper
Setting and Ambient Temperature.
4800
4825
4850
4875
4900
4925
4950
-40 -20 0 20 40 60 80 100 120
Ambient Temperature (°C)
Nominal Resistance (R
AB
)
(Ohms)
VDD = 2.7V
VDD = 5.5V
0
1000
2000
3000
4000
5000
6000
0 8 16 24 32 40 48 56 64
Wiper Setting (decimal)
R
WB
(Ohms)
-40°C
25°C
85°C
125°C