Edhittite HMC194MS8 MICROWAVE CORPORATION , GaAs MMIC MSOP8 SPDT SWITCH DC - 3 GHz FEBRUARY 1998 Features General Description ULTRA SMALL PACKAGE: MSOP8 The HMC194MS8 is a low-cost SPDT switch in an 8-lead MSOP package for use HIGH ISOLATION: 50 dB in applications which require high isola- tion between two RF paths. The device can control signals from DC to 3 GHz and is especially suited for PDC, DCS, PCS, and 2.4 GHz ISM frequency bands. The design has been optimized to provide ex- tremely high isolation with minimal inser- tion loss in medium and low power appli- cations. On chip circuitry allows positive voltage control operation at very low DC currents with control inputs compatible with CMOS and most TTL logic families. RF 1 or RF2 is a reflective open when "OFF". Applications include local oscillator multi- plexing in cellular/PCS basestation appli- cations which require high isolation. POSITIVE CONTROL: 0/+3 to 0/+7V wo oO x= 2 | Electrical Performance v., = 0/ +5 vdc, 50 Ohm System, -40 to +85 deg. C F n Ge ; A a nn) | LS 0G - 1.0 GHz OF 09 dB . - 2.0 GHz 07 0.9 dB Insertion Loss DC- 2.5 GHz O07 1.0 dB - DC-30GHz 08 11 dB RF1 / RF2 DC-1.0GHz 45/47 | 49/51 dB Isolati RF1 / RF2 / DC-20GHz | 39/44 | 42/47 dB Solation DC - 2.5 GHz 310085 dB / DC-3.0 GHz 24 2B dB bc - 1.0 GHz 18 21 0B i , DC-2.0 GHz 14 17 , Return Loss DC - 2.5 GHz 13 16 dB /_ DC - 3.0 GHz 13. 38 dB Input Power for 1dB Compression 0/+5V Control 0.5 - 1.0 GHz 19 23 dBm 0.5 -3.0 GHz 17 st dBm Input Third Order intercept O/+5V Control 0.5 - 1.0 GHz 39 : 43 dBm _ 47 dBm Each Tone) 0.5-3.0GHz 37 4 dBm Switching Characteristics DC - 3.0 GHz tRISE / tFALL (10/90% RF / 90/10% RF) - s re tON / tOFF (50% CTL to 10/90% AF) _ 21 Cabot Road, Woburn, MA 01801 Phone: 781-933-7267 Fax: 781-932-8903 Web Site: www.hittite.com 7-68 Eurtittite HMC194MS8 MICROWAVE CORPORATION GaAs MMIC MSOP8 SPDT SWITCH DC - 3 GHz FEBRUARY 1998 Insertion Loss isolation o 0 0.5 0 84 F ' wm PO | oe 2 -1.5 | 8 a } z -30 |. 5 2 g fr 25 | 3 40 8 #0 3.5 | 60 4 -70 Q ' 2 3 4 0 05 1 #15 2 285 3 45 4 FREQUENCY (GHz) FREQUENCY (GHz) Return Loss 0 5 = -10 8 B 15 O -20 = -25 -35 -40 0 1 2 3 4 FREQUENCY (GHz) S - Parameter data is available On-Line at www.hittite.com 21 Cabot Road, Woburn, MA 01801 Phone: 781-933-7267 Fax: 781-932-8903 Web Site: www. hittite.com 7-69 Switches 2 o & 3 na EaHittite MICROWAVE CORPORATION HMC194MS8 GaAs MMIC MSOP8 SPDT SWITCH DC - 3 GHz FEBRUARY 1998 Input 0.1 and 1.0 dB Compression vs Control Voltage 30 : P1 dB-at 1900 MHz 25 P1 dB af 900 MHz ~ INPUT POWER FOR 0.1 AND 1 d8 95 |e eee. POA dB at 900 MHz, PD1'dB at 1900 MHZ : COMPRESSION (dBm) 4 5 6 7 8 Control Input (Vdc) Compression vs Control Voltage eed eee Yd farted meee Lad ar Talat MUO ss La ee Payee crea Tg im RA for 1B eae) eae] Compression Gompressian Compressian Compression fh Zs1e3 eet ide} (Clet| elcia oad 19 +5 21 23 19 21 8 22 47 2 21 23 Caution: Do not operate in 1dB compression at power levels above +25dBm and do not hot switch' power levels greater than +18dBm (Control =0/ +5Vde). DC blocks are required at ports RF, RF1, RF2. Input Third Order Intercept vs Control Voltage 60 = SF ss|. of or 25 50 et Eg 900MHz >. -- aay ae De 45 az = 40 4 5 6 7 & Control Input (Vde) Distortion vs Control Voltage Third Order intercept (dBm) Contra! Input Rectan (Vdc) 900 MHz erste ad 21 Cabot Road, Woburn, MA 01801 7-70 Phone: 781-933-7267 Fax: 781-932-8903 Web Site: www.hittite.com Ealittite HMC194MS8 MICROWAVE CORPORATION GaAs MMIC MSOP8 SPDT SWITCH DC - 3 GHz FEBRUARY 1998 Functional Diagram Truth Table "Control input Tolerances are +/- 0.2 Vde RF2 GND GND AFI j : j H H H H ee CMa Tamme trellis Oras al Signal Path & to} la tb RF ta ini amie) a CCE ae Oe ae |. 0 0 oO 0 OFF OFF o | 0 +3 85 0 ON OFF | H ; q 48 0 0 -85 OFF ON PING Uf BORE ONG 0 0 oOo 0 OFF OFF . . 0 +45 302 ON OFF Absolute Maximum Ratings feet fens on enenne e 45 0 66 = 392s F ON Control Voltage Range (A & B 0.2 to +7.5 Vide ge Range (A & B) 7 0 0 0 0 OFF OFF Storage Temperature -65 to +150 deg C ao 7 | 2000. 370 ~ ON OFF Operating Temperature Wot a8 aso Po me Se xg Outline | enn 9.1160.120 AF2 RFI @88/5.08) Behe BABA -ormaae ono a HMC arte XXXX (2: 5. . | , qi94 raees) YYWW, Tare cove HHH HEE wens NN PIN + "A BRENC WWe WEEK PIN 1 (REF) 0.0380. 042 0.032/6.036 (0.96/1.07) (0.81/0.91) 0.005/0.007 ,4 AAA i eertes L 0-5 DEG ees) me] 0.012 TYP. 0.021 MIN TYP 1) MATERIAL: (0.30) (0.53) A) PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC, F: SILICA & SILICONE IMPREGNATED Le B)LEADFRAME MATERIAL: COPPER ALLOY 2. PLATING:LEAD-TIN SOLDER PLATE 3 DIMENSIONS ARE ININCHES (MILLIMETERS) UNLESS OTHERWISE SPECIFIED TOL. ARE 20.005(+0.13) 21 Cabot Road, Woburn, MA 01801 Phone: 781-933-7267 Fax: 781-932-8903 Web Site: www. hittite.com 7-71 Switches Switches eahittite HMC194MS8 MICROWAVE CORPORATION GaAs MMIC MSOP8 SPDT SWITCH DC - 3 GHz FEBRUARY 1998 Typical Application Circuit 100pF 100pF me AA paren | je Pooh, | | | | re f | ~ 100pF CTL O O CMOS | AF 1. Control inputs A and B can be driven directly with CMOS logic (HC) with V of 3 to 7 Volts applied to the CMOS logic gates. 2. DC Blocking capacitors are required for each AF port as shown. Capacitor value determines lowest frequency of operation. 3. Highest RF signal power capability is achieved with Contra! set to 0/+7V. 4. Set A/B Control to 0/+5V and use HCT series logic to provide a TTL driver interface. Notes: 21 Cabot Road, Woburn, MA 01801 Phone: 781-933-7267 Fax: 781-932-8903 Web Site: www.hittite.com 7-72