IRLS4030-7PPbF
2www.irf.com
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.05mH
RG = 25Ω, IAS = 110A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 110A, di/dt ≤ 1520A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V
∆V(BR)DSS
∆TJ Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 3.2 3.9 mΩ
––– 3.3 4.1
VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
RG(int) Internal Gate Resistance ––– 2.0 ––– Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 250 ––– ––– S
QgTotal Gate Charge ––– 93 140 nC
Qgs Gate-to-Source Charge ––– 27 –––
Qgd Gate-to-Drain ("Miller") Charge ––– 43 –––
Qsync Total Gate Charge Sync. (Qg - Qgd)––– 50 –––
td(on) Turn-On Delay Time ––– 53 ––– ns
trRise Time ––– 160 –––
td(off) Turn-Off Delay Time ––– 110 –––
tfFall Time ––– 87 –––
Ciss Input Capacitance ––– 11490 –––
Coss Output Capacitance ––– 680 –––
Crss Reverse Transfer Capacitance ––– 300 ––– pF
Coss eff. (ER) Effective Output Capacitance (Energy Related)
––– 760 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)g––– 1170 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– ––– 190 A
(Body Diode)
ISM Pulsed Source Current ––– ––– 750
(Body Diode)c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 53 ––– ns TJ = 25°C VR = 85V,
––– 63 ––– TJ = 125°C IF = 110A
Qrr Reverse Recovery Charge ––– 99 ––– nC TJ = 25°C di
dt = 100A
µs
––– 155 ––– TJ = 125°C
IRRM Reverse Recovery Current ––– 3.3 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 50V
Conditions
VGS = 4.5V f
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V h
VGS = 0V, VDS = 0V to 80V g
TJ = 25°C, IS = 110A, VGS = 0V f
integral reverse
p-n junction diode.
MOSFET symbol
showing the
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mAc
VGS = 10V, ID = 110A f
VDS = VGS, ID = 250µA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
VGS = 4.5V, ID = 94A f
ID = 110A
RG = 2.7Ω
VGS = 4.5V f
VDD = 65V
ID = 110A, VDS =0V, VGS = 4.5V
Conditions
VDS = 25V, ID = 110A
ID = 110A
VGS = 16V
VGS = -16V