<0.5 Ω CMOS 1.65 V to 3.6 V
Quad SPST Switches
ADG811/ADG812/ADG813
Rev. A
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However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.326.8703 © 2004 Analog Devices, Inc. All rights reserved.
FEATURES
0.5 Ω typ on resistance
0.8 Ω max on resistance at 125°C
1.65 V to 3.6 V operation
Automotive temperature range: –40°C to +125°C
High current carrying capability: 300 mA continuous
Rail-to-rail switching operation
Fast switching times: <25 ns
Typical power consumption < 0.1 µW
APPLICATIONS
Cellular phones
MP3 players
Power routing
Battery-powered systems
PCMCIA cards
Modems
Audio and video signal routing
Communications systems
FUNCTIONAL BLOCK DIAGRAMS
S1
D1
S2
D2
S3
D3
S4
D4
IN1
IN2
IN3
IN4
ADG811
SWITCHES SHOWN FOR A LOGIC 1 INPUT
S1
D1
S2
D2
S3
D3
S4
D4
IN1
IN2
IN3
IN4
ADG812
S1
D1
S2
D2
S3
D3
S4
D4
IN1
IN2
IN3
IN4
ADG813
04306-A-001
Figure 1.
GENERAL DESCRIPTION
The ADG811, ADG812, and ADG813 are low voltage CMOS
devices containing four independently selectable switches.
These switches offer ultralow on resistance of less than 0.8 Ω
over the full temperature range. The digital inputs can handle
1.8 V logic with a 2.7 V to 3.6 V supply.
These devices contain four independent single-pole/single-
throw (SPST) switches. The ADG811 and ADG812 differ only
in that the digital control logic is inverted. The ADG811
switches are turned on with a logic low on the appropriate
control input, while a logic high is required to turn on the
switches of the ADG812. The ADG813 contains two switches
whose digital control logic is similar to the ADG811, while the
logic is inverted on the other two switches.
Each switch conducts equally well in both directions when on
and has an input signal range that extends to the supplies. The
ADG813 exhibits break-before-make switching action.
The ADG811, ADG812, and ADG813 are fully specified for
3.3 V, 2.5 V, and 1.8 V supply operation. They are available in a
16-lead TSSOP package.
PRODUCT HIGHLIGHTS
1. <0.8 Ω over full temperature range of –40°C to +125°C.
2. Single 1.65 V to 3.6 V operation.
3. Operational with 1.8 V CMOS logic.
4. High current handling capability (300 mA continuous
current at 3.3 V).
5. Low THD+N (0.02% typ).
ADG811/ADG812/ADG813
Rev. A | Page 2 of 16
TABLE OF CONTENTS
ADG811/ADG812/ADG813—Specifications .............................. 3
Absolute Maximum Ratings............................................................ 6
ESD Caution.................................................................................. 6
Pin Configuration and Function Descriptions............................. 7
Typical Performance Characteristics ..............................................8
Test Circuits..................................................................................... 11
Outline Dimensions....................................................................... 13
Ordering Guide .......................................................................... 13
REVISION HISTORY
5/04—Data Sheet Changed from Rev. 0 to Rev. A
Updated Format..............................................................Universal
Updated Package Choices..............................................Universal
11/03—Revision 0: Initial Version
ADG811/ADG812/ADG813
Rev. A | Page 3 of 16
ADG811/ADG812/ADG813—SPECIFICATIONS
Table 1. VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted1
Parameter +25°C –40°C to +85°C –40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.5 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA;
0.65 0.75 0.8 Ω max Figure 18
0.04 Ω typ VDD = 2.7 V, VS = 0.5 V, IS = 10 mA
On Resistance Match between
Channels (∆RON) 0.075 0.08 Ω max
On Resistance Flatness (RFLAT(ON)) 0.1 Ω typ VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA
0.15 0.16 Ω max
LEAKAGE CURRENTS VDD = 3.6 V
Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V;
±1 ±8 ±80 nA max Figure 19
Drain Off Leakage ID (OFF) ±0.2 nA typ VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V;
±1 ±8 ±80 nA max Figure 19
Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 3.3 V; Figure 20
±1 ±15 ±90 nA max
DIGITAL INPUTS
Input High Voltage, VINH 2 V min
Input Low Voltage, VINL 0.8 V max
Input Current, IINL or IINH 0.005 µA typ VIN = VINL or VINH
±0.1 µA max
CIN, Digital Input Capacitance 6 pF typ
DYNAMIC CHARACTERISTICS2
tON 21 ns typ RL = 50 Ω, CL = 35 pF
25 26 28 ns max VS = 1.5 V/0 V; Figure 21
tOFF 4 ns typ RL = 50 Ω, CL = 35 pF
5 6 7 ns max VS = 1.5 V; Figure 21
Break-Before-Make Time Delay (tBBM) 17 ns typ RL = 50 Ω, CL = 35 pF
(ADG813 only) 5 ns min VS1 = VS2 = 1.5 V; Figure 22
Charge Injection 30 pC typ VS = 1.5 V, RS = 0 Ω, CL = 1 nF;
Figure 23
Off Isolation –67 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz;
Figure 24
Channel-to-Channel Crosstalk –90 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz;
Figure 26
Total Harmonic Distortion (THD + N) 0.02 % RL = 32 Ω, f = 20 Hz to 20 kHz,
VS = 2 V p-p
Insertion Loss –0.05 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
–3 dB Bandwidth 90 MHz typ RL = 50 Ω, CL = 5 pF; Figure 25
CS (OFF) 30 pF typ
CD (OFF) 35 pF typ
CD, CS (ON) 60 pF typ
POWER REQUIREMENTS VDD = 3.6 V
IDD 0.003 µA typ Digital inputs = 0 V or 3.6 V
1.0 4 µA max
1Temperature range for the Y version is –40°C to +125°C.
2Guaranteed by design, not subject to production test.
ADG811/ADG812/ADG813
Rev. A | Page 4 of 16
Table 2. VDD = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted1
Parameter +25°C –40°C to +85°C –40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 0.65 Ω typ VDD = 2.3 V, VS = 0 V to VDD, IS = 10 mA;
0.72 0.8 0.88 Ω max Figure 18
0.04 Ω typ VDD = 2.3 V; VS = 0.55 V, IS = 10 mA
On Resistance Match between
Channels (∆RON) 0.08 0.085 Ω max
On Resistance Flatness (RFLAT(ON)) 0.16 Ω typ VDD = 2.3 V; VS = 0 V to VDD, IS = 10 mA
0.23 0.24 Ω max
LEAKAGE CURRENTS VDD = 2.7 V
Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V;
±1 ±6 ±35 nA max Figure 19
Drain Off Leakage ID (OFF) ±0.2 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V;
±1 ±6 ±35 nA max Figure 19
Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 2.4 V; Figure 20
±1 ±11 ±70 nA max
DIGITAL INPUTS
Input High Voltage, VINH 1.7 V min
Input Low Voltage, VINL 0.7 V max
Input Current, IINL or IINH 0.005 µA typ VIN = VINL or VINH
±0.1 µA max
CIN, Digital Input Capacitance 6 pF typ
DYNAMIC CHARACTERISTICS2
tON 22 ns typ RL = 50 Ω, CL = 35 pF
27 29 30 ns max VS = 1.5 V/ 0 V; Figure 21
tOFF 4 ns typ RL = 50 Ω, CL = 35 pF
6 7 8 ns max VS = 1.5 V; Figure 21
Break-Before-Make Time Delay (tBBM) 18 ns typ RL = 50 Ω, CL = 35 pF
(ADG813 only) 5 ns min VS1 = VS2 = 1.5 V; Figure 22
Charge Injection 25 pC typ VS = 1.25 V, RS = 0 Ω, CL = 1 nF;
Figure 23
Off Isolation –67 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz;
Figure 24
Channel-to-Channel Crosstalk –90 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz;
Figure 26
Total Harmonic Distortion (THD + N) 0.022 % RL = 32 Ω, f = 20 Hz to 20 kHz,
VS = 1.5 V p-p
Insertion Loss –0.06 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
–3 dB Bandwidth 90 MHz typ RL = 50 Ω, CL = 5 pF; Figure 25
CS (OFF) 32 pF typ
CD (OFF) 37 pF typ
CD, CS (ON) 60 pF typ
POWER REQUIREMENTS VDD = 2.7 V
IDD 0.003 µA typ Digital inputs = 0 V or 2.7 V
1.0 4 µA max
1 Temperature range for the Y version is –40°C to +125°C.
2 Guaranteed by design, not subject to production test.
ADG811/ADG812/ADG813
Rev. A | Page 5 of 16
Table 3. VDD = 1.65 V to 1.95 V, GND = 0 V, unless otherwise noted1
Parameter +25°C –40°C to +85°C –40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range 0 V to VDD V
On Resistance (RON) 1 Ω typ VDD = 1.8 V, VS = 0 V to VDD, IS = 10 mA;
1.4 2.2 2.2 Ω max Figure 18
2.5 4 4 Ω max VDD = 1.65 V, VS = 0 V to VDD, IS = 10 mA
On Resistance Match between
Channels (∆RON)
0.1 Ω typ VDD = 1.65 V, VS = 0.7 V, IS = 10 mA
LEAKAGE CURRENTS VDD = 1.95 V
Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V;
±1 ±5 ±30 nA max Figure 19
Drain Off Leakage ID (OFF) ±0.2 nA typ VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V;
±1 ±5 ±30 nA max Figure 19
Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 1.65 V; Figure 20
±1 ±9 ±60 nA max
DIGITAL INPUTS
Input High Voltage, VINH 0.65VDD V min
Input Low Voltage, VINL 0.35VDD V max
Input Current, IINL or IINH 0.005 µA typ VIN = VINL or VINH
±0.1 µA max
CIN, Digital Input Capacitance 6 pF typ
DYNAMIC CHARACTERISTICS2
tON 27 ns typ RL = 50 Ω, CL = 35 pF
35 36 37 ns max VS = 1.5 V/ 0 V; Figure 21
tOFF 6 ns typ RL = 50 Ω, CL = 35 pF
8 9 10 ns max VS = 1.5 V; Figure 21
Break-Before-Make Time Delay (tBBM) 20 ns typ RL = 50 Ω, CL = 35 pF
(ADG813 only) 5 ns min VS1 = VS2 = 1 V; Figure 22
Charge Injection 15 pC typ VS = 1 V, RS = 0 Ω, CL = 1 nF;
Figure 23
Off Isolation –67 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz;
Figure 24
Channel-to-Channel Crosstalk –90 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz;
Figure 26
Total Harmonic Distortion (THD + N) 0.14 % RL = 32 Ω, f = 20 Hz to 20 kHz,
VS = 1.2 V p-p
Insertion Loss –0.08 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz
–3 dB Bandwidth 90 MHz typ RL = 50 Ω, CL = 5 pF; Figure 25
CS (OFF) 32 pF typ
CD (OFF) 38 pF typ
CD, CS (ON) 60 pF typ
POWER REQUIREMENTS VDD = 1.95 V
IDD 0.003 µA typ Digital inputs = 0 V or 1.95 V
1.0 4 µA max
1Temperature range for the Y version is –40°C to +125°C.
2Guaranteed by design, not subject to production test.
ADG811/ADG812/ADG813
Rev. A | Page 6 of 16
ABSOLUTE MAXIMUM RATINGS
Table 4. TA = 25°C, unless otherwise noted
Parameter Rating
VDD to GND –0.3 V to +4.6 V
Analog Inputs1 –0.3 V to VDD + 0.3 V
Digital Inputs1 GND – 0.3 V to 4.6 V or 10 mA,
whichever occurs first
Peak Current, S or D (Pulsed at 1 ms,
10% Duty Cycle Max)
3.3 V Operation 500 mA
2.5 V Operation 460 mA
1.8 V Operation 420 mA
Continuous Current, S or D
3.3 V Operation 300 mA
2.5 V Operation 275 mA
1.8 V Operation 250 mA
Operating Temperature Range
Automotive (Y Version)
–40°C to +125°C
Storage Temperature Range –65°C to +150°C
Junction Temperature 150°C
TSSOP Package
θJA Thermal Impedance 150°C/W
θJC Thermal Impedance 27°C/W
IR Reflow, Peak Temperature
<20 sec
235°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
1 Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
Table 5. ADG811/ADG812 Truth Table
ADG811 IN ADG812 IN Switch Condition
0 1 On
1 0 Off
Table 6. ADG813 Truth Table
Logic Switch 1, Switch 4 Switch 2, Switch 3
0 Off On
1 On Off
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
ADG811/ADG812/ADG813
Rev. A | Page 7 of 16
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
NC = NO CONNECT
NC
D1
S1
IN1
IN4
S4
D4
GND
D2
S2
VDD
IN2
S3
D3
IN3
NC
TOP VIEW
(Not to Scale)
ADG811/
ADG812/
ADG813
4
2
3
1
8
6
7
5
15
14
13
16
11
10
9
12
04306-A-002
Figure 2.
Table 7. Terminology
Term Definition
VDD Most positive power supply potential.
IDD Positive supply current.
GND Ground (0 V) reference.
S Source terminal. May be an input or output.
D Drain terminal. May be an input or output.
IN Logic control input.
VD, VSAnalog voltage on Terminals D, S.
RON Ohmic resistance between D and S.
RFLAT (ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the
specified analog signal range.
∆RON On resistance match between any two channels, i.e., RON max – RON min.
IS (OFF) Source leakage current with the switch off.
ID (OFF) Drain leakage current with the switch off.
ID, IS (ON) Channel leakage current with the switch on.
VINL Maximum input voltage for Logic 0.
VINH Minimum input voltage for Logic 1.
IINL (IINH) Input current of the digital input.
CS (OFF) Off switch source capacitance. Measured with reference to ground.
CD (OFF) Off switch drain capacitance. Measured with reference to ground.
CD, CS (ON) On switch capacitance. Measured with reference to ground.
CIN Digital input capacitance.
tON Delay time between the 50% and the 90% points of the digital input and switch on condition.
tOFF Delay time between the 50% and the 90% points of the digital input and switch off condition.
tBBM On or off time measured between the 80% points of both switches, when switching from one to another.
Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during on-to-off switching.
Off Isolation A measure of unwanted signal coupling through an off switch.
Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance.
–3 dB Bandwidth The frequency at which the output is attenuated by 3 dB.
On Response The frequency response of the on switch.
Insertion Loss The loss due to the on resistance of the switch.
THD + N The ratio of the harmonic amplitudes plus noise of a signal to the fundamental.
ADG811/ADG812/ADG813
Rev. A | Page 8 of 16
TYPICAL PERFORMANCE CHARACTERISTICS
0.60
0.55
0.50
0.45
ON RESISTANCE (Ω)
0.40
0.35
0.30
0.25
0.200 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
D
, V
S
(V)
V
DD
= 2.7V
V
DD
= 3V
T
A
= 25°C
V
DD
= 3.6V V
DD
= 3.3V
04306-A-003
Figure 3. On Resistance vs. VD (VS), VDD = 2.7 V to 3.6 V
V
D
, V
S
(V)
ON RESISTANCE (Ω)
04306-A-004
0.8
0.3
0.4
0.5
0.6
0.7
0.20 0.5 2.52.01.51.0
T
A
= 25°C
V
DD
= 2.3V
V
DD
= 2.5V
V
DD
= 2.7V
Figure 4. On Resistance vs. VD (VS), VDD = 2.5 V ± 0.2 V
V
D
, V
S
(V)
ON RESISTANCE (Ω)
04306-A-005
1.8
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
T
A
= 25°C
V
DD
= 1.8V
V
DD
= 1.65V
V
DD
= 1.95V
Figure 5. On Resistance vs. VD (VS), VDD = 1.8 V ± 0.15 V
V
D
, V
S
(V)
ON RESISTANCE (Ω)
04306-A-006
1.2
0.2
0.4
0.6
0.8
1.0
00 3.02.52.01.51.00.5
+125°C
+85°C
+25°C
–40°C
V
DD
= 3.3V
Figure 6. On Resistance vs. VD (VS) for Different Temperatures, VDD = 3.3 V
V
D
, V
S
(V)
ON RESISTANCE (Ω)
04306-A-007
1.2
0.2
0.4
0.6
0.8
1.0
00 2.52.01.51.00.5
+125°C
+25°C
V
DD
= 2.5V
+85°C
–40°C
Figure 7. On Resistance vs. VD (VS) for Different Temperatures, VDD = 2.5 V
V
D
, V
S
(V)
ON RESISTANCE (Ω)
04306-A-008
1.4
0.2
0.4
0.6
0.8
1.0
1.2
00 1.80.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
+25°C
–40°C
+85°C
+125°C
V
DD
= 1.8V
Figure 8. On Resistance vs. VD (VS) for Different Temperatures, VDD = 1.8 V
ADG811/ADG812/ADG813
Rev. A | Page 9 of 16
TEMPERATURE (°C)
CURRENT (nA)
04306-A-009
–80
–70
–60
–50
–40
–30
–20
–10
0
10
120100806040200 140
ID (OFF)
ID, IS (ON)
VDD = 3.3V
IS (OFF)
Figure 9. Leakage Currents vs. Temperature, VDD = 3.3 V
TEMPERATURE (°C)
CURRENT (nA)
04306-A-010
–60
–50
–40
–30
–20
–10
0
10
I
D
, I
S
(ON)
V
DD
= 2.5V
I
S
(OFF)
I
D
(OFF)
120100806040200 140
Figure 10. Leakage Currents vs. Temperature, VDD = 2.5 V
TEMPERATURE (°C)
LEAKAGE (nA)
04306-A-011
–60
–50
–40
–30
–20
–10
0
I
D
, I
S
(ON)
I
S
(OFF)
I
D
(OFF)
V
DD
= 1.8V
120100806040200 140
Figure 11. Leakage Currents vs. Temperature, VDD = 1.8 V
V
S
(V)
Q
INJ
(pC)
04306-A-012
0
20
40
60
80
100
120
2.52.01.0 1.50 0.5 3.0 3.5 4.0
T
A
= 25°C
V
CC
= 2.5V
V
CC
= 3.6V
V
CC
= 1.8V
Figure 12. Charge Injection vs. Source Voltage
TEMPERATURE (°C)
TIME (ns)
04306-A-013
0
5
10
15
20
25
30
35
t
OFF
t
ON
V
CC
= 3V
V
CC
= 3V
V
DD
= 2.5V V
DD
= 1.8V
V
CC
= 2.5V
V
CC
= 1.8V
60 80 100 1204020–20–40 0
Figure 13. tON/tOFF Times vs. Temperature
FREQUENCY (MHz)
ATTENUATION (dB)
04306-A-014
–10
–8
–4
–2
0
1
–6
–9
–5
–3
–1
–7
0.01 0.1 1000100101
V
CC
= 3.3V/2.5V/1.8V
T
A
= 25°C
Figure 14. Bandwidth
ADG811/ADG812/ADG813
Rev. A | Page 10 of 16
FREQUENCY (MHz)
ATTENUATION (dB)
04306-A-015
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
0.01 0.1 1000100101
V
CC
= 3.3V/2.5V/1.8V
T
A
= 25°C
Figure 15. Crosstalk vs. Frequency
FREQUENCY (MHz)
ATTENUATION (dB)
04306-A-016
–100
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
0.01 0.1 1000100101
V
CC
= 3.3V/2.5V/1.8V
T
A
= 25°C
Figure 16. Off Isolation vs. Frequency
FREQUENCY (Hz)
THD+N (%)
04306-A-017
0.02
0.04
0.05
0.06
0.08 V
DD
= 2.5V
T
A
= 25°C
32
Ω
LOAD
1.5V p-p
20 50 100 200 500 1k 2k 5k 10k 20k
Figure 17. Total Harmonic Distortion
ADG811/ADG812/ADG813
Rev. A | Page 11 of 16
TEST CIRCUITS
V
S
R
ON
= V1/I
DS
I
DS
V1
04306-A-018
SD
V
S
V
D
I
S
(OFF) I
D
(OFF)
A A
SD
04306-A-019
VD
ID (ON)
NC SD
A
04306-A-020
Figure 18. On Resistance Figure 19. Off Leakage Figure 20. On Leakage
SD
IN
GND
R
L
50Ω
C
L
35pF
V
DD
V
IN
V
OUT
V
IN
V
OUT
V
S
V
DD
t
ON
t
OFF
50% 50%
90% 90%
50% 50%
0.1µF
ADG811
ADG812
04306-A-021
Figure 21. Switching Times
IN1, IN2
S1 D1
0.1µF
GND
R
L2
50Ω
R
L1
50Ω
S2 D2
V
DD
V
OUT2
V
OUT1
V
S1
V
S2
V
IN
V
DD
C
L1
35pF
C
L2
35pF
V
OUT
V
IN
t
BBM
t
BBM
50% 50%
80%
0V
80%
04306-A-022
Figure 22. Break-Before-Make Time Delay, tBBM (ADG813)
IN
GND
C
L
1nF
V
DD
SD
R
S
V
S
V
IN
V
OUT
V
OUT
V
DD
SW ON
Q
INJ
= C
L
×∆V
OUT
SW OFF
∆V
OUT
04306-A-023
Figure 23. Charge Injection
ADG811/ADG812/ADG813
Rev. A | Page 12 of 16
NETWORK
ANALYZER
R
L
GND
V
DD
V
DD
V
DD
V
S
S
0.1µF
D
50Ω
50Ω
50Ω
OFF ISOLATION = 20 LOG V
S
V
OUT
04306-A-024
Figure 24. Off Isolation
NETWORK
ANALYZER
R
L
GND
V
DD
V
DD
V
DD
V
S
S
0.1µF
D
50Ω
50Ω
INSERTION LOSS = 20 LOG V
OUT
WITH SWITCH
V
OUT
WITHOUT SWITCH
04306-A-025
Figure 25. Bandwidth
R
L
GND
V
DD
V
DD
V
OUT
V
S
S1
S2
0.1µF
D
50Ω
R
L
50Ω
50Ω
CHANNEL-TO-CHANNEL CROSSTALK = 20 LO
G
V
OUT
V
S
NETWORK
ANALYZER
04306-A-026
Figure 26. Channel-to-Channel Crosstalk
ADG811/ADG812/ADG813
Rev. A | Page 13 of 16
OUTLINE DIMENSIONS
16 9
81
PIN 1
SEATING
PLANE
8°
0°
4.50
4.40
4.30
6.40
BSC
5.10
5.00
4.90
0.65
BSC
0.15
0.05
1.20
MAX 0.20
0.09 0.75
0.60
0.45
0.30
0.19
COPLANARITY
0.10
COMPLIANT TO JEDEC STANDARDS MO-153AB
Figure 27. 16-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-16)
Dimensions shown in millimeters
ORDERING GUIDE
Model Temperature Range Package Description Package Option
ADG811YRU –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
ADG811YRU-REEL –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
ADG811YRU-REEL7 –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
AADG812YRU –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
ADG812YRU-REEL –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
ADG812YRU-REEL7 –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
ADG813YRU –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
ADG813YRU-REEL –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
ADG813YRU-REEL7 –40°C to +125°C Thin Shrink Small Outline (TSSOP) RU-16
ADG811/ADG812/ADG813
Rev. A | Page 14 of 16
NOTES
ADG811/ADG812/ADG813
Rev. A | Page 15 of 16
NOTES
ADG811/ADG812/ADG813
Rev. A | Page 16 of 16
NOTES
© 2004 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
C04306–0–5/04(A)
