ZHCS2000
Document number: DS33221 Rev. 4 - 2 1 of 6
www.diodes.com September 2011
© Diodes Incorporated
ZHCS2000
40V SURFACE MOUNT SCHOTTKY BARRIER DIODE
Product Summary
• V
R = 40V
• I
C = 2A
Description and Applications
A surface mount Schottky Barrier Diode featuring low forward voltage
drop suitable for high frequency rectification and reverse voltage
protection.
• Mobile Telecomms
• DC – DC Converters
• High Frequency Rectification
Features and Benefits
• High current capability
• Low Forward Voltage
• Fast Recovery Time
• Small Package Size
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT26
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Copper leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Weight: 0.016 grams (approximate)
Ordering Information (Note 1)
Device Packaging Shipping
ZHCS2000TA SOT26 3000/Tape & Reel
Notes: 1. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
Top View
ZS20 = Product Type Marking Code
SOT26
ZS20
C
C
A
C
C
A
Top View
Pin Out
C
A
Device Symbol
ZHCS2000
Document number: DS33221 Rev. 4 - 2 2 of 6
www.diodes.com September 2011
© Diodes Incorporated
ZHCS2000
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Continuous Reverse Voltage VR 40 V
Continuous Forward Current IF 2 A
Average Peak Forward Current; D.C. = 50% IFAV 4 A
Non Repetitive Forward Current t
≤ 100
μ
s IFSM 20 A
t
≤ 10ms 10 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation, TA = 25°C PD 1.1 W
Thermal Resistance, Junction to Ambient (Note 2)
(Note 3) RθJA 113
73
Junction Temperature TJ 125 °C
Storage Temperature Range TSTG -55 to +150 °C
Notes: 2. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
3. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
ZHCS2000
Document number: DS33221 Rev. 4 - 2 3 of 6
www.diodes.com September 2011
© Diodes Incorporated
ZHCS2000
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage V
(
BR
)
R 40 - - V
IR = 1mA
Forward Voltage (Note 4) VF
- 290 325
mV
IF = 500mA
- 340 385 IF = 1000mA
- 380 445 IF = 1500mA
- 420 500 IF = 2000mA
- 485 615 IF = 3000mA
- 420 - IF = 2000mA, TA = 100°C
Reverse Current IR - 160 300
μA VR = 30V
Diode Capacitance CD - 50 - pF
f = 1MHz, VR = 25V
Reverse Recovery Time trr - 5.5 - ns Switched from IF = 500mA to
IR = 500mA
Measured @ IR = 50mA
Notes: 4. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle ≤ 2%.
ZHCS2000
Document number: DS33221 Rev. 4 - 2 4 of 6
www.diodes.com September 2011
© Diodes Incorporated
ZHCS2000
ZHCS2000
Document number: DS33221 Rev. 4 - 2 5 of 6
www.diodes.com September 2011
© Diodes Incorporated
ZHCS2000
Package Outline Dimensions
Suggested Pad Layout
SOT26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D ⎯ ⎯ 0.95
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
α 0° 8°
⎯
All Dimensions in mm
Dimensions Value (in mm)
Z 3.20
G 1.60
X 0.55
Y 0.80
C1 2.40
C2 0.95
A
M
JL
D
B C
H
K
X
Z
Y
C1
C2
C2
G
ZHCS2000
Document number: DS33221 Rev. 4 - 2 6 of 6
www.diodes.com September 2011
© Diodes Incorporated
ZHCS2000
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