WBFBP-06C
(2×2×0.5)
unit: mm
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FMMBD4448HTW
SURFACE MOUNT SWITCHING DIODE ARRAYS
DESCRIPTION
Silicon epitaxial planar
Switching Diode
FEATURES
z Ultra-Small Surface Mount Package
z Fast Switching Speed
z High Conductance
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
FMMBD4448HTW
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Marking:KAA
Parameter Symbol Limits Unit
Non-Repetitive Peak re verse voltage VRM 100 V
Peak Repetitive peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
80 V
RMS Reverse Vo ltage VR(RMS) 57 V
Forward Continuous Current IFM 500 mA
Average Rectified Output Current IO 250 mA
Non-Repetitive Peak forward surge current @=1.0µs
@=1.0s IFSM
4.0
2.0 A
Power Dissipation Pd 150 mW
Thermal Resistance Junction to Ambient RθJA 625
℃/W
Junction temperature TJ 150
℃
Storage temperature range TSTG -65 to +150 ℃
Electrical Ratings @TA=25℃
Parameter Symbol Min. Typ. Max. Unit Conditions
Reverse Breakd own Voltage VR 80 V IR=100μA
VF1 0.62 0.72 V IF=5mA
VF2 0.855 V IF=10mA
VF3 1.0 V IF=100mA
Forward voltage
VF4 1.25 V IF=150mA
IR1 0.1 µA VR=70V
Reverse current IR2 25 nA VR=20V
Capacitance between terminals CT 3.5 pF VR=6V,f=1MHz
Reverse Recovery Time trr 4 ns VR=6V,IF=5mA
1
Typical Characteristics
APPLICATION CIRCUITS
Bridge rectifiers
