70
VTS Process Photodiodes VTS__86H
PRODUCT DESCRIPTION
This series of planar, P on N, large area silicon
photodiodes is characterized for use in the
photovoltaic (unbiased) mode. Their excellent speed
and broadband sensitivity makes them ideal for
detecting light from a variety of sources such as
LEDs, IREDs, flashtubes, incandescent lamps,
lasers, etc. Improved shunt resistance minimizes
amplifier offset and drift in high gain systems. The
solderable contact system on these photodiodes
provides a cost effective design solution for many
applications.
ABSOLUTE MAXIMUM RATINGS
Storage Te mperatur e:
-40° C to 150°C Series 20, 31
-40° C to 105°C Series 30
Operati ng Te mp er ature:
-40° C to 125°C Series 20, 31
-40° C to 105°C Series 30
PACKAG E DIMENSIONS inch (mm)
CASE 44B
ANODE (ACTIVE) SURFACE SHOWN
CATHODE IS BA CKSIDE
DIMENSIONS VTS__86
L .100 (2.54)
W .200 (5.08)
ACTIVE AREA .0152 (102)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTS curves, page 67)
SYMBOL CHARACTERISTI C TEST CONDITIONS VTS__86H UNITS
Min. Typ. Max.
ISC Short Circuit Current H = 1000 lux, 2850 K 60 80 µA
TC ISC ISC Temperature Coeffic ient H = 1000 Lux, 2850 K .20 %/ °C
IDDark Current H = 0, VR = 100 m V 10 100 nA
TC IDID Temp. Coefficient H = 0, VR = 100 mV +11 %/°C
RSH Shunt Resistance H = 0, VR = 10 mV 6.0 MΩ
CJJunction Capacitance H = 0, V = 0 V, 1 MHz 0.25 nF
SRSensitivity @ 400 nm .18 0.20 A/W
Re Responsiv ity 400 nm, 0.18 A/W 0.02 A/(W/cm2)
TC VOC S ensitivity @ Peak 925 nm 0.60 A/W
t
R
/t
F
Response Time @ 1 k Ω Load VR = 1 V, 830 nm 0.75 µsec
VOC Open Circuit Voltage H = 1000 Lux, 2850 K 0.25 0. 45 Volts
TC VOC VOC Tem perat ure Coefficient H = 1000 Lux, 2850 K -2. 6 mV/°C
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
RoHS Compliant
