RN1601~RN1606
2010-05-19
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1601, RN1602, RN1603
RN1604, RN1605, RN1606
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z Including two devices in SM6 (super-mini-type with six (6) leads)
z With built-in bias resistors
z Simplified circuit design
z Reduced number of parts and manufacturing process
z Complementary to RN2601 to RN2606
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage
RN1601 to 1606
VCEO 50 V
RN1601 to 1604 10
Emitter-base voltage
RN1605, 1606
VEBO 5
V
Collector current IC 100 mA
Collector power dissipation PC* 300 mW
Junction temperature Tj 150 °C
Storage temperature range
RN1601 to 1606
Tstg −55 to150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
SM6
JEDEC ―
JEITA ―
TOSHIBA 2-3N1A
Weight: 15mg (typ.)
Type No. R1 (kΩ)R2 (kΩ)
RN1601 4.7 4.7
RN1602 10 10
RN1603 22 22
RN1604 47 47
RN1605 2.2 47
RN1606 4.7 47
Unit: mm
Equivalent Circuit
(Top View)
RN1601~RN1606
2010-05-19
2
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
ICBO ― V
CB = 50 V, IE = 0 ― ― 100
Collector cut-off current RN1601 to 1606
ICEO ― V
CE = 50 V, IB = 0 ― ― 500
nA
RN1601 ― 0.82 ― 1.52
RN1602 ― 0.38 ― 0.71
RN1603 ― 0.17 ― 0.33
RN1604 ―
VEB = 10 V, IC = 0
0.082 ― 0.15
RN1605 ― 0.078 ― 0.145
Emitter cut-off current
RN1606
IEBO
―
VEB = 5 V, IC = 0
0.074 ― 0.138
mA
RN1601 ― 30 ― ―
RN1602 ― 50 ― ―
RN1603 ― 70 ― ―
RN1604 ― 80 ― ―
RN1605 ― 80 ― ―
DC current gain
RN1606
hFE
―
VCE = 5 V, IC = 10 mA
80 ― ―
―
Collector-emitter
saturation voltage RN1601 to 1606 VCE (sat) ― IC = 5 mA,
IB = 0.25 mA ― 0.1 0.3 V
RN1601 ― 1.1 ― 2.0
RN1602 ― 1.2 ― 2.4
RN1603 ― 1.3 ― 3.0
RN1604 ― 1.5 ― 5.0
RN1605 ― 0.6 ― 1.1
Input voltage (ON)
RN1606
VI (ON)
―
VCE = 0.2 V, IC = 5 mA
0.7 ― 1.3
V
RN1601 to 1604 ― 1.0 ― 1.5
Input voltage (OFF)
RN1605 to 1606
VI (OFF) ―
VCE = 5 V, IC = 0.1 mA
0.5 ― 0.8
V
Transition frequency RN1601 to 1606 fT ― V
CE = 10 V, IC = 5 mA ― 250 ― MHz
Collector output
capacitance RN1601 to 1606 Cob ― VCB = 10 V, IE = 0
f = 1 MHz ― 3 6 pF
RN1601 ― 3.29 4.7 6.11
RN1602 ― 7 10 13
RN1603 ― 15.4 22 28.6
RN1604 ― 32.9 47 61.1
RN1605 ― 1.54 2.2 2.86
Input resistor
RN1606
R1
―
―
3.29 4.7 6.11
kΩ
RN1601 to 1604 ― 0.9 1.0 1.1
RN1605 ― 0.0421 0.0468 0.0515
Resistor ratio
RN1606
R1/R2
―
―
0.09 0.1 0.11
―
RN1601~RN1606
2010-05-19
3
(Q1, Q2 Common)
RN1601~RN1606
2010-05-19
4
(Q1, Q2 Common)
RN1601~RN1606
2010-05-19
5
(Q1, Q2 Common)
Ta=100 ℃
RN1601~RN1606
2010-05-19
6
Marking
Type Name Marking
RN1601
RN1602
RN1603
RN1604
RN1605
RN1606
RN1601~RN1606
2010-05-19
7
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