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Page <1> V1.011/09/14
NPN General Purpose Transistor
Features:
• Epitaxial planar die construction.
• Complementary NPN type available (MMBT5401).
• Also available in lead free version.
Application:
• Ideal for medium power amplication and switching
Maximum Rating @ Ta = 25°C unless otherwise specied
Parameter Symbol Value Unit
Collector-Base Voltage Vcbo 180 V
Collector-Emitter Voltage Vceo 160 V
Emitter-Base Voltage Vebo 6 V
Collector Current (DC) Ic 0.6 A
Collector dissipation Pc0.35 W
Thermal Resistance Junction to Ambient Rθja357 °C/W
Junction and Storage Temperature Tj,Tstg -55 to +150 °C
Electrical Characteristics @ Ta = 25°C unless otherwise specied
Parameter Symbol Test conditions Min. Max. Unit
Collector-base breakdown voltage V(br)cbo Ic=-100μA Ie=0 180 V
Collector-emitter breakdown voltage V(br)ceo Ic=-0.1mA Ib=0 160 V
Emitter-base breakdown voltage V(br)ebo Ie=-10μA, Ic=0 6 V
Collector cut-off current Icbo Ie = 0, Vcb = 120V - 50 nA
Emitter cut-off current Iebo Ic = 0; Veb = 4V 50 nA
DC current gain hfe
Vce = 5V; Ic= 1mA
Vce = 5V;Ic = 10mA
Vce = 5V;Ic = 50mA
80
80
30
-
250
-
Collector-emitter saturation voltage Vce(sat) Ic=10mA, Ib=1mA
Ic=50mA, Ib=5mA -0.15
0.2 V
Base-emitter saturation voltage Vbe(sat) Ic=10mA Ib=1mA
Ic=50mA Ib=5mA -1
1V
Transition frequency ftIc=10mA; Vcb=10V;
f=1MHz 100 300 MHz
Output Capacitance Cobo Ie=10mA; Vce =10V;
f=100MHz - 6 MHz