IGBT MODULE Spec.No.IGBT-SP-06010 R1 (P1/5) MBN1200E33C OUTLINE DRAWING FEATURES High thermal fatigue durability. (delta Tc=70 , N>30,000cycles) Low noise due to ultra soft fast recovery diode. High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. High reliability, high durability module. Isolated head sink (terminal to base). Unit in mm Weight : 1300(g) o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Collector Emitter Voltage Gate Emitter Voltage Symbol Unit VCES VGES DC IC Collector Current 1ms ICp DC IF Forward Current 1ms IFM Junction Temperature Tj Storage Temperature Tstg Isolation Voltage VISO Terminals (M4/M8) Screw Torque Mounting (M6) Notes: (1) Recommended Value 1.80.2/91N*m MBN1200E33C V V 3,300 20 1,200 A 2,400 1,200 A 2,400 o C -40 ~ +125 o C -40 ~ +125 VRMS 6,000(AC 1 minute) 2/10 (1) N*m 6 (2) (2) Recommended Value 5.50.5N*m o ELECTRICAL CHARACTERISTICS (Tc=25 C ) Item Symbol Unit Collector Emitter Cut-Off Current I CES mA Gate Emitter Leakage Current IGES nA Collector Emitter Saturation Voltage VCE(sat) V Gate Emitter Threshold Voltage Input Capacitance Rise Time Turn On Time Switching Times Fall Time Turn Off Time VGE(TO) Cies tr ton tf toff V nF VFM V trr s Peak Forward Voltage Drop Reverse Recovery Time s Min. 4.5 - Typ. 20 4.1 4.8 5.5 140 2.0 2.9 1.7 3.5 2.2 2.3 0.8 Max. 12 60 500 4.7 5.3 6.5 3.2 3.8 3.2 5.6 2.8 2.75 1.4 Test Conditions o VCE=3,300V, VGE=0V, Tj=25 C o VCE=3,300V, VGE=0V, Tj=125 C o VGE=20V, VCE=0V, Tj=25 C o IC=1,200A, VGE=15V, Tj=25 C o IC=1,200A, VGE=15V, Tj=125 C o VCE=10V, IC=1200mA, Tj=25 C o VCE=10V, VGE=0V, f=100kHz, Tj=25 C VCC=1,650V, Ic=1,200A L=100nH (3) RG=3.3 o VGE=15V, Tj=125 C o Ic=1,200A, VGE=0V, Tj=25 C o Ic=1,200A, VGE=0V, Tj=125 C Vcc=1,650V, Ic=1,200A, L=100nH o Tj=125 C VCC=1,650V, Ic=1,200A, L=100nH RG=3.3 (3) o VGE=15V, Tj=125 C Turn On Loss Eon(10%) J/P 2.3 2.6 Turn Off Loss Eoff(10%) J/P 1.4 2.1 Reverse Recovery Loss Err(10%) J/P 1.5 2.1 IGBT Rth(j-c) 0.0085 Thermal Impedance K/W Junction to case FWD Rth(j-c) 0.017 Notes:(3) RG value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. Counter arm IGBT VGE=-15V Spec.No.IGBT-SP-06010 R1 (P2/5) IGBT MODULE MBN1200E33C CHARACTERISTICS CURVE STATIC Tc=25 TYPICAL TYPICAL VGE=15V 13V 2000 1800 1800 1600 1600 1400 1400 1200 9V 1000 800 Tc=125 13V 11V 1200 9V 1000 800 600 600 400 400 7V 7V 200 200 5V 0 5V 0 0 1 2 3 4 5 6 7 8 9 Collector-Emitter Voltage VCE (V) 0 10 Tc=25 Tc=125 1800 1600 1400 1200 1000 800 600 400 200 0 0 1 2 3 4 Forward Voltage VF (V) Forward Voltage of free-wheeling diode 2 3 4 5 6 7 8 9 10 Collector Current vs.Collector to Emitter Voltage TYPICAL 2000 1 Collector-Emitter Voltage VCE (V) Collector Current vs.Collector to Emitter Voltage Forward Current IF (A) VGE=15V 2000 11V Collector Current IC (A) Collector Current IC (A) CHARACTERISTICS 5 Spec.No.IGBT-SP-06010 R1 (P3/5) IGBT MODULE MBN1200E33C DEPENDENCE OF CURRENT TYPICAL 3.0 Conditions 2 Eon(full) Tc=125 Vcc=1650V Rg=3.3 L=100nH VG=15V 2.5 TYPICAL Conditions Eoff(full) Tc=125 Vcc=1650V Rg=3.3 L=100nH VG=15V 1.8 Eon(10%) 1.6 Eoff (J/pulse) 2.0 1.5 1.0 VCE IC 1.2 1 0.8 IC 0.6 0 VGE 0 t1 t3 Eon(10%)= Eon(full)= t3 t2 t1 t5 t7 IC VCE dt Eoff(10%)= 0.2 IC VCE dt Eoff(full)= 0.0 t8 t7 t6 t5 t8 t6 IC VCE dt IC VCE dt 0 0 200 400 600 800 1000 1200 1400 0 200 400 Collector Current IC (A) 5.0 Err(full) 2.0 Err(10%) 1.5 1.0 0.1VCE VCE IRM 0 0.1IF t IF IC 0.5 t12 t9 t11 200 400 600 800 Conditions t11 t10 4.0 3.5 toff 3.0 ton 2.5 tr 2.0 tf 1.5 1.0 t10 trr IC VCE dt 0.5 t9 1400 4.5 IC VCE dt 0.0 0 t12 Err(10%)= Err(full)= Switching Time ton,tr,toff,tf,trr ( s ) 1200 Tc=125 Vcc=1650V Rg=3.3 L=100nH VG=15V 5.5 Tc=125 Vcc=1650V Rg=3.3 L=100nH VG=15V 1000 TYPICAL 6.0 Conditions 2.5 800 Turn-off Loss vs. Collector Current TYPICAL 3.0 600 Collector Current IC (A) Turn-on Loss vs. Collector Current Reverse Recovery Loss Err (J/pulse) t VGE t4 t2 t4 10% 0 0.4 0.5 VCE 10% 10% 10% 0 Turn-off Loss Turn-on Loss Eon (J/pulse) Eoff(10%) 1.4 1000 1200 Collector Current IC (A) Turn-on Loss vs. Collector Current 1400 0.0 0 200 400 600 800 Collector Current 1000 1200 1400 IC (A) Switching Time vs. Collector Current Spec.No.IGBT-SP-06010 R1 (P4/5) IGBT MODULE MBN1200E33C DEPENDENCE OF RG TYPICAL 5 4 Conditions Conditions Tc=125 Vcc=1650V IC=1200A L=100nH VG=15V 2.5 3 2.5 Eon(10%) 2 1.5 VCE IC 0 10% t VGE 0 t5 t7 Eoff(full)= 2 1.5 t8 t7 t6 t5 t8 t6 IC VCE dt IC VCE dt Eoff(Full) Eoff(10%) 1 VGE 0 0.5 VCE 10% 10% 10% 0 IC Eoff(10%)= Eoff (J/pulse) 3.5 0.5 t1 t3 Eon(10%)= Eon(full)= t4 t2 t4 t3 t2 IC VCE dt IC VCE dt t1 0 0 0.0 2.0 4.0 6.0 Gate Resistance RG ( 8.0 ) Conditions 0.1VCE Tc=125 Vcc=1650V IC=1200A L=100nH VG=15V 2.5 VCE IRM 0 0.1IF t IF IC t12 t9 t11 t12 Err(10%)= Err(full)= t10 IC VCE dt t11 t10 IC VCE dt t9 2 Err(Full) Err(10%) 1.5 1 0.5 0 0.0 2.0 4.0 Gate Resistance 6.0 RG ( 2.0 4.0 8.0 ) Recovery Loss vs. Gate Resistance 6.0 RG ( ) Turn-off Loss vs. Gate Resistance TYPICAL 3 0.0 Gate Resistance Turn-on Loss vs. Gate Resistance Err (J/pulse) Eon(Full) 1 Reverse Recovery Loss TYPICAL 3 Turn-off Loss Eon (J/pulse) Tc=125 Vcc=1650V IC=1200A L=100nH VG=15V 4.5 Turn-on Loss 8.0 Spec.No.IGBT-SP-06010 R1 (P5/5) IGBT MODULE MBN1200E33C TRANSIENT THERMAL IMPEDANCE FWD IGBT 0.01 0.001 Transient thermal impedance: Zth(j-c) (K/W) 0.1 0.0001 0.001 0.01 0.1 1 Time (s) Transient Thermal Impedance Curve 10 HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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