IGBT MODULE
MBN1200E33C
FEATURES
∗ High thermal fatigue durability.
(delta Tc=70
, N>30,000cycles)
∗ Low noise due to ultra soft fast recovery diode.
∗ High speed, low loss IGBT module.
∗ Low driving power due to low input
capacitance MOS gate.
∗ High reliability, high durability module.
∗ Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
oC
)
Item Symbol Unit MBN1200E33C
Collector Emitter Voltage V
CES
V 3,300
Gate Emitter Voltage V
GES
V ±20
DC I
C
1,200
Collector Current 1ms I
Cp
A 2,400
DC I
F
1,200
Forward Current 1ms I
FM
A 2,400
Junction Temperature T
j
o
C -40 ~ +125
Storage Temperature T
stg
o
C -40 ~ +125
Isolation Voltage V
ISO
V
RMS
6,000(AC 1 minute)
Terminals
(M4/M8)
- 2/10 (1)
Screw Torque Mounting
(M6)
- N·m 6 (2)
Notes: (1) Recommended Value 1.8±0.2/9±1N·m (2) Recommended Value 5.5±0.5N·m
ELECTRICAL CHARACTERISTICS (Tc=25
oC
)
Item Symbol
Unit
Min.
Typ.
Max.
Test Conditions
- - 12 V
CE
=3,300V, V
GE
=0V, Tj=25
o
C
Collector Emitter Cut-Off Current I
CES
mA - 20 60 V
CE
=3,300V, V
GE
=0V, Tj=125
o
C
Gate Emitter Leakage Current I
GES
nA - -
500
V
GE
=±20V, V
CE
=0V, Tj=25
o
C
- 4.1 4.7 I
C
=1,200A, V
GE
=15V, Tj=25
o
C
Collector Emitter Saturation Voltage V
CE(sat)
V - 4.8 5.3 I
C
=1,200A, V
GE
=15V, Tj=125
o
C
Gate Emitter Threshold Voltage V
GE(TO)
V 4.5 5.5 6.5 V
CE
=10V, I
C
=1200mA, Tj=25
o
C
Input Capacitance C
ies
nF - 140
- V
CE
=10V, V
GE
=0V, f=100kHz, Tj=25
o
C
Rise Time t
r
- 2.0 3.2 V
CC
=1,650V, Ic=1,200A
Turn On Time
t
on
- 2.9 3.8 L=100nH
Fall Time t
f
- 1.7 3.2 R
G
=3.3
(3)
Switching Times
Turn Off Time t
off
µs
- 3.5 5.6 V
GE
=±15V, Tj=125
o
C
- 2.2 2.8 Ic=1,200A, V
GE
=0V, Tj=25
o
C
Peak Forward Voltage Drop V
FM
V - 2.3 2.75
Ic=1,200A, V
GE
=0V, Tj=125
o
C
Reverse Recovery Time t
rr
µs - 0.8 1.4 Vcc=1,650V, Ic=1,200A, L=100nH
Tj=125
o
C
Turn On Loss E
on(10%)
J/P - 2.3 2.6
Turn Off Loss E
off(10%)
J/P - 1.4 2.1
Reverse Recovery Loss E
rr(10%)
J/P - 1.5 2.1
V
CC
=1,650V, Ic=1,200A, L=100nH
R
G
=3.3
(3)
V
GE
=±15V, Tj=125
o
C
IGBT Rth(j-c)
- - 0.0085
Thermal Impedance
FWD Rth(j-c)
K/W
- - 0.017
Junction to case
Notes:(3) R
G
value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable R
G
value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
Counter arm IGBT V
GE
=-15V
Spec.No.IGBT-SP-06010 R1 (P1/5)
OUTLINE DRAWING
Unit in mm
Weight : 1300(g)
IGBT MODULE
MBN1200E33C
CHARACTERISTICS CURVE
STATIC CHARACTERISTICS
Spec.No.IGBT-SP-06010 R1 (P2/5)
Collector Current vs.Collector to Emitter Voltage
TYPICAL
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 1 2 3 4 5 6 7 8 9 10
Collector-Emitter Voltage VCE (V)
Collector Current IC (A)
Tc=25
9V
5V
7V
VGE=15V13V
11V
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 1 2 3 4 5 6 7 8 9 10
Collector-Emitter Voltage VCE (V)
Collector Current IC (A)
Tc=125
9V
5V
7V
11V
VGE=15V 13V
Collector Current vs.Collector to Emitter Voltage
TYPICAL
TYPICAL
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 1 2 3 4 5
Forward Voltage VF (V)
Forward Current IF (A)
Tc=25
Tc=125
Forward Voltage of free-wheeling diode
IGBT MODULE
MBN1200E33C
DEPENDENCE OF CURRENT
Spec.No.IGBT-SP-06010 R1 (P3/5)
TYPICAL
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 200 400 600 800 1000 1200 1400
Collector Current IC (A)
Turn-on Loss Eon (J/pulse)
Eon(10%)
Eon(full)
Conditions
Tc=125
Vcc=1650V
Rg=3.3
L=100nH
VG=±15V
I
C
V
GE
10%
10%
V
CE
0
0
t1 t3 t4 t2
Eon(10%)=
I
C
V
CE
dt
Eon(full)=
I
C
V
CE
dt
t4
t2t3
t1
Turn-on Loss vs. Collector Current
TYPICAL
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 200 400 600 800 1000 1200 1400
Collector Current IC (A)
Turn-off Loss Eoff (J/pulse)
Eoff(10%)
Eoff(full)
Eoff(10%)=
I
C
V
CE
dt
Eoff(full)=
I
C
V
CE
dt
t8
t6
t7
t5
V
GE
V
CE
I
C
10%
10%
t8
t7
t
0
0
t5
t6
Conditions
Tc=125
Vcc=1650V
Rg=3.3
L=100nH
VG=±15V
Turn-off Loss vs. Collector Current
TYPICAL
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 200 400 600 800 1000 1200 1400
Collector Current IC (A)
Reverse Recovery Loss Err (J/pulse)
Err(10%)
Err(full)
Conditions
Tc=125
Vcc=1650V
Rg=3.3
L=100nH
VG=±15V
Turn-on Loss vs. Collector Current
Err(10%)=
I
C
V
CE
dt
Err(full)=
I
C
V
CE
dt
t12
t10
t11
t9
V
CE
0.1V
CE
0.1I
F
I
RM
I
C
t10
t11
t
0
t12
t9
I
F
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0 200 400 600 800 1000 1200 1400
Collector Current I
C
(A)
Switching Time ton,tr,toff,tf,trr ( µ
µ
µ
µs )
toff
tf
ton
trr
tr
Conditions
Tc=125
Vcc=1650V
Rg=3.3
L=100nH
VG=±15V
Switching Time vs. Collector Current
TYPICAL
IGBT MODULE
MBN1200E33C
DEPENDENCE OF RG
Spec.No.IGBT-SP-06010 R1 (P4/5)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.0 2.0 4.0 6.0 8.0
Gate Resistance RG (
)
Turn-on Loss Eon (J/pulse)
Eon(Full)
Conditions
Tc=125
Vcc=1650V
IC=1200A
L=100nH
VG=±15V
Eon(10%)
Turn-on Loss vs. Gate Resistance
TYPICAL
I
C
V
GE
10%
10%
V
CE
0
0
t1 t3 t4 t2
Eon(10%)=
I
C
V
CE
dt
Eon(full)=
I
C
V
CE
dt
t4
t2t3
t1
0
0.5
1
1.5
2
2.5
3
0.0 2.0 4.0 6.0 8.0
Gate Resistance R
G
(
)
Turn-off Loss Eoff (J/pulse)
Eoff(Full)
Eoff(10%)
Conditions
Tc=125
Vcc=1650V
IC=1200A
L=100nH
VG=±15V
Turn-off Loss vs. Gate Resistance
TYPICAL
Eoff(10%)=
I
C
V
CE
dt
Eoff(full)=
I
C
V
CE
dt
t8
t6
t7
t5
V
GE
V
CE
I
C
10%10%
t8
t7
t
0
0
t5
t6
0
0.5
1
1.5
2
2.5
3
0.0 2.0 4.0 6.0 8.0
Gate Resistance R
G
(
)
Reverse Recovery Loss Err (J/pulse)
Err(Full)
Err(10%)
Conditions
Tc=125
Vcc=1650V
IC=1200A
L=100nH
VG=±15V
Recovery Loss vs. Gate Resistance
TYPICAL
Err(10%)=
I
C
V
CE
dt
Err(full)=
I
C
V
CE
dt
t12
t10
t11
t9
V
CE
0.1V
CE
0.1I
F
I
RM
I
C
t10
t11
t
0
t12
t9
I
F
IGBT MODULE
MBN1200E33C
TRANSIENT THERMAL IMPEDANCE
Transient Thermal Impedance Curve
Spec.No.IGBT-SP-06010 R1 (P5/5)
0.0001
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Time (s)
Transient thermal impedance: Zth(j-c) (K/W)
FWD
IGBT
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3. In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4. In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for an y intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5. In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6. No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8. The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
HITACHI POWER SEMICONDUCTORS
For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Notices
NoticesNotices
Notices
Hitachi power semiconductor home page address http://www.pi.hitachi.co.jp/pse
