APTM100SKM90G Buck chopper MOSFET Power Module Application * AC and DC motor control * Switched Mode Power Supplies VBUS Q1 G1 Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration OUT S1 CR2 0/VBUS 0/VBUS Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile * RoHS Compliant OUT Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 1000 78 59 312 30 105 1250 25 50 3000 Unit V A V m W A July, 2006 VBUS S1 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM100SKM90G- Rev 1 G1 VDSS = 1000V RDSon = 90m typ @ Tj = 25C ID = 78A @ Tc = 25C APTM100SKM90G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 1000V T j = 25C VGS = 0V,VDS = 800V T j = 125C VGS = 10V, ID = 39A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Unit m V nA nF nC 12 Test Conditions 40 3.6 5.7 mJ 3.1 Typ Max 250 500 Tj = 125C 100 1.9 2.2 1.7 Tj = 25C 300 Tj = 125C 360 Tj = 25C 800 Tj = 125C 4050 www.microsemi.com mJ 2.5 Min 1000 Tj = 25C Tj = 125C Tc = 70C ns 155 Inductive switching @ 125C VGS = 15V, VBus = 670V ID = 78A, R G = 1.2 IF = 100A VR = 670V di/dt = 200A/s Max A 18 Inductive switching @ 25C VGS = 15V, VBus = 670V ID = 78A, R G = 1.2 IF = 100A IF = 200A IF = 100A Unit 488 Inductive switching @ 125C VGS = 15V VBus = 670V ID = 78A R G =1.2 VR=1000V Typ 20.7 3.5 0.64 744 Max 400 2000 105 5 250 96 Chopper diode ratings and characteristics IRM 90 3 VGS = 10V VBus = 500V ID = 78A Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ Unit V A A 2.5 V ns July, 2006 IDSS Characteristic nC 2-6 APTM100SKM90G- Rev 1 Symbol APTM100SKM90G Thermal and package characteristics Symbol Characteristic Min Transistor Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.1 0.55 Unit C/W V 150 125 100 5 3.5 280 C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM100SKM90G- Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTM100SKM90G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 320 240 7V 160 6.5V 120 6V 80 5.5V 40 VDS > I D(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 280 ID, Drain Current (A) 240 200 160 120 T J=25C 80 40 5V 0 0 5 10 15 20 25 T J=125C 30 0 ID, DC Drain Current (A) 4 5 6 7 8 9 1.1 VGS=20V 0.9 0.8 70 60 50 40 30 20 10 0 0 40 80 120 160 200 240 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance V GS=10V 1 3 80 Normalized to VGS =10V @ 39A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 T J=-55C 0 4-6 APTM100SKM90G- Rev 1 I D, Drain Current (A) V GS=15, 10&8V 200 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=39A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100s 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 limited by R DSon 100 1ms Single pulse TJ=150C TC=25C 10 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 14 ID=78A TJ=25C 12 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) VDS=200V V DS =500V V DS=800V 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC) July, 2006 0 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (C) TJ, Junction Temperature (C) www.microsemi.com 5-6 APTM100SKM90G- Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100SKM90G APTM100SKM90G Delay Times vs Current Rise and Fall times vs Current 80 t d(off) 160 V DS=670V RG =1.2 T J=125C L=100H 120 80 0 40 tr 0 20 40 60 80 100 120 140 160 20 ID, Drain Current (A) 60 80 100 120 140 160 I D, Drain Current (A) 14 Eon VDS=670V RG=1.2 TJ=125C L=100H 8 6 Switching Energy (mJ) Switching Energy (mJ) 40 Switching Energy vs Gate Resistance Switching Energy vs Current 10 Eoff 4 2 0 VDS=670V ID=78A T J=125C L=100H 12 10 Eoff 8 Eon 6 4 Eoff 2 0 20 40 60 80 100 120 140 160 0 I D, Drain Current (A) 2 4 6 8 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 I DR, Reverse Drain Current (A) 250 ZVS 200 Frequency (kHz) tf 20 td(on) 40 VDS=670V RG=1.2 TJ=125C L=100H 60 tr and tf (ns) td(on) and td(off) (ns) 200 ZCS 150 VDS=670V D=50% RG=1.2 T J=125C T C=75C 100 50 Hard switching 0 10 20 30 40 50 ID, Drain Current (A) 60 TJ=150C TJ=25C 10 1 70 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM100SKM90G- Rev 1 July, 2006 0 100