DATA SH EET
Product specification September 1995
DISCRETE SEMICONDUCTORS
BFQ67W
NPN 8 GHz wideband transistor
September 1995 2
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT323 envelope.
DESCRIPTION
NPN transis tor in a plastic SOT323
envelope.
It is designed for wideband
applications such as satellite TV
tuners and RF portable
communications equipment up to
2GHz.
PINNING
PIN DESCRIPTION
Code: V2
1 base
2emitter
3 collector
Fig.1 SOT323.
handbook, 2 columns 3
12
MBC870
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maxi mum Sys tem (IEC 134).
Note
1. Tsis the temperature at the sold ering point of the collector tab.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 10 V
ICDC collector current 50 mA
Ptot total power dissipation up to Ts=118 C; note 1 300 mW
hFE DC current gain IC=15 mA; V
CE =5 V; T
j=25 C60 100
fTtransition frequenc y IC=15 mA; V
CE =8 V; f =2 GHz;
Tamb =25 C8GHz
GUM maximum unilateral power gain Ic=15 mA; V
CE =8 V; f =1 GHz;
Tamb =25 C13 dB
F noise figure Ic=5 mA; V
CE =8 V; f=1 GHz 1.3 dB
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 10 V
VEBO emitter-base voltage open collector 2.5 V
ICDC collector current 50 mA
Ptot total power dissipation up to Ts=118 C; note 1 300 mW
Tstg storage temperature 65 150 C
Tjjunction temperature 175 C
September 1995 3
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
THERMAL RESIST ANCE
Note
1. Tsis the temperature at the sold ering point of the collector tab.
CHARACTERISTICS
Tj=25 C, unless otherwise specified.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s thermal resistance from junction to
soldering point up to Ts=118 C; note 1 190 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collecto r cut-off current IE=0; V
CB =5 V 50 nA
hFE DC current ga in IC=15 mA; V
CE =5 V 60 100
Cccollector capacitance I E=i
e= 0; VCB =8 V; f=1 MHz 0.7 pF
Ceemitter capacitance IC=i
c= 0; VEB =0.5 V; f=1 MHz 1.3 pF
Cre feedback capacitance IC=0; V
CB =8 V; f=1 MHz 0.5 pF
fTtransition fr eq uency IC=15 mA; V
CE =8 V; f=2 GHz;
Tamb =25 C8GHz
GUM maximum unilater al power gain
(note 1) IC=15 mA; V
CE =8 V; f=1 GHz
Tamb =25 C13 dB
IC=15 mA; V
CE =8 V; f=2 GHz;
Tamb =25 C8dB
F noise figure s=opt;I
C= 5 mA; VCE =8 V;
f=1GHz 1.3 dB
s=opt;I
C=15 mA; V
CE =8 V;
f=1GHz 2dB
s=opt;I
C= 5 mA; VCE =8 V;
f=2GHz 2.2 dB
IC=5 mA; V
CE =8 V;
f=2 GHz; Z
s=60
2.5 dB
s=opt;I
C=15 mA; V
CE =8 V;
f=2GHz 2.7 dB
IC=5 mA; V
CE =8 V;
f=2 GHz; Z
s=60
3dB
GUM 10 log S21 2
1S
11 2
–1S
22 2
–
---------------------------------------------------------- dB.=
September 1995 4
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
Fig.2 Power derating curve.
handbook, halfpage
0 50 100 200
400
300
100
0
200
MRC045- 1
150
Ptot
(mW)
Ts(oC)
Fig.3 DC current gain as a fu nction of collector
current.
VCE =5 V; T
j=25 C.
handbook, halfpage
0
120
80
40
020 40
MBB301
60
I (mA)
C
FE
h
Fig.4 Feedback capacitance as a function of
collector-base voltage.
IC=0; f=1 MHz.
handbook, halfpage
0
0.2
0.4
0.6
0.8
04812
MRC039
(pF)
V (V)
CB
Cre
Fig.5 Transition frequency as a function of
collector current.
VCE = 8 V; f = 2 GHz; Tamb =25 C.
handbook, halfpage
01020 40
8
6
2
0
4
MBB303
30 I (mA)
C
(GHz)
T
f10
September 1995 5
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
In Figs 6 to 9, GUM = maximum unilateral power gain ;
MSG = maximum stable gain; Gmax = ma ximum availa ble
gain.
Fig.6 Gain as a function of collector current.
VCE = 8 V; f = 1 GHz; Tamb =25 C.
handbook, halfpage MRC042
0
5
10
15
20
0 5 10 15 20 25 30 35
MSG
Gmax
gain
(dB)
IC(mA)
GUM
Fig.7 Gain as a function of frequency.
IC=5 mA; V
CE =8 V; T
amb =25 C.
handbook, halfpage
0
10
20
30
40
50
10−210−1110
f (GHz)
MRC040
MSG
GUM
Gmax
gain
(dB)
Fig.8 Gain as a function of frequency.
IC=15 mA; V
CE =8 V; T
amb =25 C.
handbook, halfpage MRC041
0
10
20
30
40
50
10−210−1110
f (GHz)
MSG
GUM
Gmax
gain
(dB)
Fig.9 Gain as a function of frequency.
IC=30 mA; V
CE =8 V; T
amb =25 C.
handbook, halfpage
MRC043
0
10
20
30
40
50
10−210−1110
f (GHz)
MSG
GUM
Gmax
gain
(dB)
September 1995 6
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
Fig.10 Minimum noise figure as a function of
collector current.
VCE =8 V; f=1 GHz.
handbook, halfpage MRC044
0
1
2
3
4
11010
2
IC(mA)
F
(dB)
handbook, full pagewidth
MRC046
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
135°
90°
45°
0°
−45°
−90°
−135°
Fmin = 1.5 dB
F = 2 dB
F = 2.5 dB
F = 3 dB
opt
Fig.11 Noise circle.
IC=5 mA; V
CE =8 V;
f = 1 GHz; Zo=50 .
September 1995 7
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
Fig.12 Common emitter input reflection coefficient (S11).
IC=15 mA; V
CE =8 V; Z
o=50 .
handbook, full pagewidth
MRC047
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2
3 GHz
0.5 1 2 5
180°
135°
90°
45°
0°
−45°
−90°
−135°
40 MHz
Fig.13 Common emitter forward transmission coefficient (S21).
IC=15 mA; V
CE =8 V.
handbook, full pagewidth
MRC048
180°
135°
90°
45°
0°
−45°
−90°
−135°
50 40 30 20 10 3 GHz
40 MHz
September 1995 8
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
Fig.14 Common emitter reverse trans m ission coefficient (S12).
IC=15 mA; V
CE =8 V.
handbook, full pagewidth
MRC049
180°
135°
90°
45°
0°
−45°
−90°
−135°
0.5 0.4 0.3 0.2 0.1
3 GHz
40 MHz
Fig.15 Common emitter output refle ction coefficient (S22).
IC=15 mA; V
CE =8 V; Z
o=50 .
handbook, full pagewidth
MRC050
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
135°
90°
45°
0°
−45°
−90°
−135°
3 GHz
40 MHz
September 1995 9
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
PACKAGE OUTLINE
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface-mounted package; 3 leads SOT323
04-11-04
06-03-16
September 1995 10
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completin g a d esign.
2. The product status of device(s) described in this documen t may have changed since this document wa s published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
DEFINITIONS
Product specification The information and da ta
provided in a Product data she et shall define the
specification of the product as agreed between NXP
Semiconductors and its custo m er, unless NXP
Semiconductors and cus to mer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which th e NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconduc tors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, busin es s inte rru ption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of comme rcial
sale of NXP Semiconductors.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and prod uct descriptions, at any time and
without notice. This document supersedes and replaces all
information su pplied prior to the publica t ion hereof.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to res ult in personal injury, deat h or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductor s pr od ucts in such equipment or
application s and therefore such incl usion and/or use is at
the customer’s own risk.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors pro du ct is su itable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of custo m er’s third
party customer(s). Customers should provide appropriate
design and opera ting safeguards to minimize the risks
associated with their ap plications and pr oducts.
September 1995 11
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFQ67W
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semic on ductors products in order to
avoid a default of the app lications and the products or of
the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ra tings only and
(proper) operat ion of the device at these or any other
conditions above those given in the Recommende d
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the qua l ity and
reliability of the device.
Terms and conditions of commercial sale NXP
Semiconductors products are sold subject to the genera l
terms and conditio ns of commercial sale, as published at
http://www.nxp.com/profile/terms, unless ot herwise
agreed in a valid written individual agreement. In cas e an
individual agreeme nt is co nc luded only the terms and
conditions of the resp ective agreement shall app ly. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semicon ductors products by cust ome r.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for accepta nc e or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick refer ence data The Quick reference data is an
extract of th e product data given in the Li miting values and
Characteristics sections of this document, an d as such is
not complete, exhaus tive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is au tomotive qualified, the
product is not suitable fo r automotive use. It is neither
qualified nor te sted in accorda nce with automot ive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified prod ucts in automotive equipment or
applications.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for suc h aut omo tive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be so lely at
customer’s own ris k, an d (c) customer fully indemnifi es
NXP Semiconductors for an y liability, damages or failed
product clai ms r esult ing fr om cus to mer d esi gn an d us e of
the product for automotive ap plic ations beyond NXP
Semiconductors ’ st andard warran ty and NXP
Semiconductors’ product specifications.
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Contact information
For additional information p lease visit: http://www.nxp.com
For sales offices addr esses send e- mail to: salesaddresses@nxp.com
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not fo rm p ar t o f an y q uot ation or co ntract, is believed to be accurate a nd re liable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No cha ng es were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R77/03/pp12 Date of releas e: September 1995
