BSS 209PW
OptiMOS
®
-P Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Super Logic level ( 2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C A
TC=70 °C
Pulsed drain current ID,pulse TC=25 °C
Avalanche energy, single pulse EAS ID= -0.63 A,
RGS=25 ΩmJ
Reverse diode dv/dtdv/dt
ID= -0.63 A,
VDS=-16 V,
di/dt=-200 A/µs,
Tj,max=150 °C
kV/µs
Gate source voltage VGS V
Power dissipation Ptot TA=25 °C W
Operating and storage temperature Tj, Tstg °C
ESD class JESD22-C101 (HBM)
Soldering temperature
IEC climatic category; DIN IEC 68-1
0.30
260 °C
Value
4.0
-2.5
-0.63
-0.5
0 (max 250V)
55/150/56
-55 ... 150
±12
-6
VDS -20 V
RDS(on),max 550 mΩ
ID-0.63 A
Product Summary
PG-SOT-323
Type Package Tape and Reel Information Marking Lead free Packing
BSS 209PW SOT-323 H6327: 1000 pcs/reel X3s Yes Non Dry
Rev. 1.32 page 1 2011-07-13
BSS 209PW
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point RthJS - - 120 K/W
SMD version, device on PCB: RthJA
minimal footprint - - 420
6 cm2 cooling area1) - - 350
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=-250µA -20 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=3.5 µA -0.6 -0.9 -1.2
Zero gate voltage drain current IDSS VDS=-20 V, VGS=0 V,
Tj=25 °C - -0.1 -1 µA
VDS=-20 V, VGS=0 V,
Tj=150 °C - -10 -100
Gate-source leakage current IGSS VGS=12 V, VDS=0 V - -10 -100 nA
Drain-source on-state resistance RDS(on) VGS=2.5 V, ID=0.46 A - 581 900
VGS=4.5 V, ID=0.63 A - 379 550
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=0.46 A 0.87 1.74 - S
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air;
t
≤10 sec.
Values
Rev. 1.32 page 2 2011-07-13
BSS 209PW
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 87 115 pF
Output capacitance Coss - 35 46.7
Reverse transfer capacitance Crss -3045
Turn-on delay time td(on) - 2.6 4.0 ns
Rise time tr-711
Turn-off delay time td(off) -69
Fall time tf- 4.6 6.9
Gate Char
g
e Characteristics3)
Gate to source charge Qgs - -0.18 -0.24 nC
Gate to drain charge Qgd - -0.46 -0.7
Gate charge total Qg- -1.0 -1.3
Gate plateau voltage Vplateau - -2.0 - V
Reverse Diode
Diode continous forward current IS- - -0.7 A
Diode direct current, pulsed ISM - - -4.0
Diode forward voltage VSD VGS=0 V, IF=-0.58 A,
Tj=25 °C - -0.92 -0.88 V
Reverse recovery time trr VR=10 V, IF=|IS|,
diF/dt=100 A/µs - 9 11.2 ns
Reverse recovery charge Qrr - 1.27 1.59 nC
TC=25 °C
Values
VGS=0 V, VDS=-15 V,
f=1 MHz
VDD=-10 V, VGS=-
4.5 V, ID=0.58 A,
RG=6 Ω
VDD=10 V, ID=0.58 A,
VGS=0 to 4.5 V
Rev. 1.32 page 3 2011-07-13
BSS 209PW
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); |VGS|≥4.5 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C1); D=0 ZthJS=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
102
101
100
10-1
101
100
10-1
10-2 0.01
0.1
1
10
0.1 1 10 100
-VDS [V]
-ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
101
100
10-1
10-2
10-3
10-4
10-5
1
10
100
1000
tp [s]
ZthJS [K/W]
0
0.2
0.4
0.6
0.8
1
1.2
0 40 80 120 160
TA [°C]
Ptot [W]
0
0.2
0.4
0.6
0 40 80 120 160
TA [°C]
-ID [A]
Rev. 1.32 page 4 2011-07-13
BSS 209PW
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
-2 V
-2.3 V
-2.7 V -3 V
-3.2 V
-3.5 V
-4.5 V
-10 V
100
200
300
400
500
600
700
800
900
1000
0 0.5 1 1.5 2 2.5 3 3.5
-ID [A]
RDS(on) [mΩ]
25 °C
150 °C
0
1
2
3
0123
-VGS [V]
-ID [A]
0
1
2
3
01234
-ID [A]
gfs [S]
-2.3 V
-2.5 V
-2.7 V
-3 V
-3.2 V
-3.5 V
-4.5 V
-10 V
0
1
2
3
4
02356
-VDS [V]
-ID [A]
Rev. 1.32 page 5 2011-07-13
BSS 209PW
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=-0.58 A; VGS=-4.5 V VGS(th)=f(Tj); VGS=VDS; ID=-3.5 μA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ.
98 %
250
300
350
400
450
500
550
600
650
700
750
800
-60 -20 20 60 100 140
Tj [°C]
RDS(on) [mΩ]
Ciss
Coss
Crss
103
102
10
100
1000
0 5 10 15 20
-VDS [V]
C [pF]
typ.
min.
max.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-60 -20 20 60 100 140
Tj [°C]
-VGS(th) [V]
25 °C, typ
150 °C, typ
25 °C, 98%
150 °C, 98%
0.01
0.1
1
10
0 0.5 1 1.5 2 2.5
-VSD [V]
IF [A]
Rev. 1.32 page 6 2011-07-13
BSS 209PW
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=-0.58 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage
VBR(DSS)=f(Tj); ID=-250 μA
-4V -10V
-16 V
0
1
2
3
4
5
6
7
8
9
10
0 0.5 1 1.5 2 2.5
-Qgate [nC]
-VGS [V]
18
19
20
21
22
23
-60 -20 20 60 100 140
Tj [°C]
-VBR(DSS) [V]
25 °C
100 °C
125 °C
103
102
101
100
100
10-1
tAV [µs]
-IAV [A]
Rev. 1.32 page 7 2011-07-13
BSS 209PW
Package Outline:
Footprint: Packaging:
Rev. 1.32 page 8 2011-07-13
BSS 209PW
Published by
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 1.32 page 9 2011-07-13
