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BYG21K, BYG21M
www.vishay.com Vishay General Semiconductor
Revision: 09-Aug-2018 1Document Number: 88961
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low reverse current
• Soft recovery characteristic
• Fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHE3_X - RoHS-compliant, and AEC-Q101
qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meet JESD 201 class 2
whisker test
Polarity: color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.5 A
VRRM 800 V, 1000 V
IFSM 30 A
IR1.0 μA
VF1.6 V
trr 120 ns
ER20 mJ
TJ max. 150 °C
Package SMA (DO-214AC)
Circuit configuration Single
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYG21K BYG21M UNIT
Device marking code BYG21K BYG21M
Maximum repetitive peak reverse voltage VRRM 800 1000 V
Average forward current IF(AV) 1.5 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load IFSM 30 A
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I(BR)R = 1 A, TJ = 25 °C ER20 mJ
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C