General Purpose Transistor Pin Configuration: 1. Emitter 2. Base 3. Collector Features: * * NPN silicon planar epitaxial transistors General purpose transistors, best suited for use in driver stages of audio amplifiers, of tape recorders. Low noise input stages, Hi-Fi amplifiers, signal processing circuits of television receivers Absolute Maximum Ratings Parameters Symbol Value Unit Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO 5 IC 100 mA 625 5 mW mW/C 1.5 12 W mW/C Tj, Tstg -55 to +150 C Junction to Ambient Rth (j-a) 200 Junction to Case Rth (j-c) 83.3 Collector Current Continuous Power Dissipation at Ta = 25C Derate above 25C Power Dissipation at TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 30 V Thermal Resistance C/W www.element14.com www.farnell.com www.newark.com Page <1> 03/01/13 V1.0 General Purpose Transistor Electrical Characteristics (Ta = 25C unless otherwise specified) Parameters Symbol Test Condition Collector Emitter Voltage VCEO IC = 1mA, IB = 0 Collector Base Voltage VCBO IC = 10A, IE = 0 Emitter Base Voltage VEBO IE = 10A, IC = 0 Collector Cut off Current ICBO Emitter Cut off Current DC Current Gain Min. Typ. Max. - - - - 5 - - VCB = 30V, IE = 0 VCB = 30V, IE = 0, Ta = +125C - - 15 5 nA A IEBO VEB = 4V, IC = 0 - - 15 nA hFE VCE = 5V, IC = 10A VCE = 5V, IC = 2mA 100 420 270 500 800 - Collector Emitter Saturation Voltage VCE (sat) IC = 10mA, IB = 0.5mA IC = 10mA, IB = see note1 IC = 100mA, IB = 5mA* - 0.075 0.3 0.25 0.25 0.6 0.6 Base Emitter Saturation Voltage VBE (sat) IC = 10mA, IB = 5mA* - 1.1 - Base Emitter on Voltage VBE (on) IC = 10A, VCE = 5V IC = 100A, VCE = 5V IC = 2mA, VCE = 5V 0.55 0.52 0.55 0.62 0.7 fT IC = 10mA, VCE = 5V, f = 100MHz - 250 - MHz Ccbo IE = 0, VCE = 10V f = 1MHz - 2.5 - pF NF1* VCE = 5V, IC = 200A RS = 2K, f = 30Hz -15kHz - 0.6 2.5 10 dB 450 600 900 - 03/01/13 V1.0 30 Units V V Dynamic Characteristics Transition Frequency Collector Output Capacitance Noise Figure Small Signal Current Gain NF2 VCE = 5V, IC = 200A RS = 100K, f = 1kHz hfe VCE = 5V, IC = 2mA f = 1kHZ Note 1: IB is value for which IC = 11mA at VCE = 1V *Pulse Condition: = Pulse Width 300s, Duty Cycle 2%. www.element14.com www.farnell.com www.newark.com Page <2> General Purpose Transistor Dimensions Min. Max. A 4.32 5.33 B 4.45 5.2 C 3.18 4.19 D 0.41 0.55 E 0.35 0.5 F G H 5 1.4 1.14 1.53 K 12.7 - L 1.982 2.082 Dimensions : Millimetres Pin Configuration: 1. Emitter 2. Base 3. Collector Part Number Table Description Part Number Transistor, NPN, TO-92 BC549C Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <3> 03/01/13 V1.0