MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. http://onsemi.com SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Electrically Similar to Popular TIP31 and TIP32 Series NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable Pb-Free Packages are Available* DPAK CASE 369C DPAK-3 CASE 369D MARKING DIAGRAMS AYWW J11xG DPAK A Y WW x G YWW J11xG DPAK-3 = Assembly Location = Year = Work Week = 2 or 7 = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 February, 2012 - Rev. 11 1 Publication Order Number: MJD112/D MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) MAXIMUM RATINGS Rating Symbol Max Unit VCEO 100 Vdc Collector-Base Voltage VCB 100 Vdc Emitter-Base Voltage VEB 5 Vdc Collector-Emitter Voltage Collector Current Continuous Peak IC Base Current IB Total Power Dissipation @ TC = 25C Derate above 25C PD Total Power Dissipation (Note1) @ TA = 25C Derate above 25C PD Operating and Storage Junction Temperature Range TJ, Tstg 2 4 50 20 0.16 1.75 0.014 -65 to +150 Adc mAdc W W/C W W/C C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction-to-Case Characteristic RqJC 6.25 C/W Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 71.4 C/W 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. http://onsemi.com 2 MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIII IIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 100 - - 20 - 20 - 2 - 10 - 2 500 1000 200 - 12,000 - - - 2 3 - 4 - 2.8 25 - Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO Collector-Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO Emitter-Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc) (IC = 2 Adc, VCE = 3 Vdc) (IC = 4 Adc, VCE = 3 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 2 Adc, IB = 8 mAdc) (IC = 4 Adc, IB = 40 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 4 Adc, IB = 40 mAdc) VBE(sat) Base-Emitter On Voltage (IC = 2 Adc, VCE = 3 Vdc) VBE(on) - Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 Mhz) MJD117, NJVMJD117T4G MJD112, NJVMJD112T4G Cob pF - - 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. http://onsemi.com 3 MHz 200 100 MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 8k D1 60 +4V 25 ms tf 1 0.8 tr 0.6 0.4 FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf 10 ns DUTY CYCLE = 1% 0.2 0.04 0.06 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.03 td @ VBE(off) = 0 V PNP NPN 0.1 Figure 1. Switching Times Test Circuit 1 0.7 0.5 IB1 = IB2 TJ = 25C 2 t, TIME (s) RB 51 VCC = 30 V IC/IB = 250 ts RC SCOPE TUT V2 APPROX +8 V 0 V1 APPROX -12 V 4 VCC -30 V 0.4 0.6 0.2 1 IC, COLLECTOR CURRENT (AMP) 2 4 Figure 2. Switching Times RqJC(t) = r(t) RqJC RqJC = 6.25C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.01 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 t, TIME OR PULSE WIDTH (ms) Figure 3. Thermal Response http://onsemi.com 4 20 30 50 100 200 300 500 1000 MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) TA TC 2.5 25 10 7 5 3 2 100ms PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMP) ACTIVE-REGION SAFE-OPERATING AREA 500ms 1 0.7 0.5 0.3 0.2 5ms 1ms dc BONDING WIRE LIMITED THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.1 TJ = 150C CURVES APPLY BELOW RATED VCEO 2 3 5 7 10 20 30 50 70 100 200 2 20 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (C) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Maximum Rated Forward Biased Safe Operating Area TC 125 15 Figure 5. Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 200 C, CAPACITANCE (pF) TC = 25C 100 70 50 Cob 30 Cib 20 PNP NPN 10 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance http://onsemi.com 5 10 20 40 MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) TYPICAL ELECTRICAL CHARACTERISTICS NPN MJD112 PNP MJD117 6k 6k VCE = 3 V 4k 4k 3k 3k 2k hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125C 25C 1k 800 -55C 600 400 300 0.04 0.06 0.1 0.4 0.6 1 0.2 IC, COLLECTOR CURRENT (AMP) 2 25C 2k 1k 800 -55C 600 400 300 0.04 0.06 4 VCE = 3 V TC = 125C 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 4 3.4 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain TJ = 125C 3 IC = 0.5 A 2.6 1A 2A 4A 2.2 1.8 1.4 1 0.6 0.1 0.2 0.5 1 2 5 10 20 50 100 3.4 TJ = 125C 3 2.6 IC = 0.5 A 1A 2A 4A 2.2 1.8 1.4 1 0.6 0.1 0.2 0.5 IB, BASE CURRENT (mA) 1 2 5 10 20 50 100 IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 2.2 2.2 TJ = 25C TJ = 25C 1.4 1.8 VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 VBE @ VCE = 3 V 1 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V 1 VCE(sat) @ IC/IB = 250 0.6 0.1 0.2 0.4 0.6 1 2 0.2 0.04 0.06 4 IC, COLLECTOR CURRENT (AMP) 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) Figure 9. "On Voltages http://onsemi.com 6 2 4 MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) PNP MJD117 +0.8 0 V, TEMPERATURE COEFFICIENTS (mV/C) V, TEMPERATURE COEFFICIENTS (mV/C) NPN MJD112 *APPLIED FOR IC/IB < hFE/3 -0.8 25C TO 150C -1.6 -2.4 *qVC FOR VCE(sat) -55C TO 25C -3.2 -4 25C TO 150C qVC FOR VBE -4.8 0.04 0.06 0.1 -55C TO 25C 0.4 0.6 1 0.2 IC, COLLECTOR CURRENT (AMP) 2 +0.8 0 *APPLIES FOR IC/IB < hFE/3 25C TO 150C -0.8 -1.6 *qVC FOR VCE(sat) -55C TO 25C -2.4 25C TO 150C -3.2 -4 -4.8 0.04 0.06 4 -55C TO 25C qVB FOR VBE 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 4 Figure 10. Temperature Coefficients 105 104 103 REVERSE FORWARD IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 105 VCE = 30 V 102 TJ = 150C 101 100 100C 25C 10-1 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1 VBE, BASE-EMITTER VOLTAGE (VOLTS) +1.2 +1.4 104 103 REVERSE FORWARD VCE = 30 V 102 101 TJ = 150C 100C 100 25C 10-1 +0.6 +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 11. Collector Cut-Off Region COLLECTOR PNP COLLECTOR NPN BASE BASE 8k 120 8k EMITTER 120 EMITTER Figure 12. Darlington Schematic http://onsemi.com 7 -1.2 -1.4 MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) ORDERING INFORMATION Device MJD112 MJD112G Package Type MJD112-1G DPAK-3 (Pb-Free) MJD112T4 MJD112T4G NJVMJD112T4G MJD117 MJD117G 75 Units / Rail 369D DPAK 1,800 Tape & Reel DPAK (Pb-Free) DPAK DPAK (Pb-Free) 369C 2,500 Tape & Reel DPAK (Pb-Free) DPAK DPAK (Pb-Free) MJD117-001 DPAK-3 MJD117-1G DPAK-3 (Pb-Free) MJD117T4 369C DPAK (Pb-Free) DPAK-3 MJD112RLG Shipping DPAK MJD112-001 MJD112RL Package 75 Units / Rail 369D DPAK MJD117T4G DPAK (Pb-Free) NJVMJD117T4G DPAK (Pb-Free) 369C 2,500 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 8 MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 --- 0.040 0.155 --- STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 9 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 --- 1.01 3.93 --- MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) PACKAGE DIMENSIONS IPAK CASE 369D-01 ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 A S 1 2 DIM A B C D E F G H J K R S V Z Z 3 -T- SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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