Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 11
1Publication Order Number:
MJD112/D
MJD112,
NJVMJD112T4G (NPN),
MJD117,
NJVMJD117T4G (PNP)
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Pb−Free Packages are Available*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SILICON
POWER TRANSISTORS
2 AMPERES
100 VOLTS, 20 WATTS
DPAK−3
CASE 369D
DPAK
CASE 369C
MARKING DIAGRAMS
A = Assembly Location
Y = Year
WW = Work Week
x = 2 or 7
G = Pb−Free Package
AYWW
J11xG
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
YWW
J11xG
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DPAK DPAK−3
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP)
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage VCEO 100 Vdc
Collector−Base Voltage VCB 100 Vdc
Emitter−Base Voltage VEB 5 Vdc
Collector Current
Continuous
Peak
IC2
4
Adc
Base Current IB50 mAdc
Total Power Dissipation
@ TC = 25C
Derate above 25C
PD20
0.16
W
W/C
Total Power Dissipation (Note1)
@ TA = 25C
Derate above 25C
PD1.75
0.014
W
W/C
Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 6.25 C/W
Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 71.4 C/W
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP)
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3
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
100
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ICEO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
20
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ÎÎÎÎ
ÎÎÎÎ
ICBO
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
20
ÎÎÎÎ
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
IEBO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Cutoff Current
(VCB = 80 Vdc, IE = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ICBO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
10
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Cutoff Current
(VBE = 5 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
IEBO
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
2
ÎÎÎÎ
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 0.5 Adc, VCE = 3 Vdc)
(IC = 2 Adc, VCE = 3 Vdc)
(IC = 4 Adc, VCE = 3 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
hFE
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
500
1000
200
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
12,000
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 2 Adc, IB = 8 mAdc)
(IC = 4 Adc, IB = 40 mAdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCE(sat)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2
3
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage
(IC = 4 Adc, IB = 40 mAdc)
ÎÎÎÎ
ÎÎÎÎ
VBE(sat)
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
4
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage
(IC = 2 Adc, VCE = 3 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VBE(on)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.8
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain − Bandwidth Product
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
fT
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
25
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 Mhz)
MJD117, NJVMJD117T4G
MJD112, NJVMJD112T4G
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Cob
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
200
100
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
pF
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP)
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4
0.04 0.2 40.1
0.06 0.6 1
4
IC, COLLECTOR CURRENT (AMP)
VCC = 30 V
IC/IB = 250
t, TIME (s)
2
1
0.8
0.6
0.4
0.2
ts
tf
Figure 1. Switching Times Test Circuit Figure 2. Switching Times
V2
APPROX
+8 V
0 8 k
SCOPE
VCC
-30 V
RC
51
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
25 ms
tr, tf 10 ns
DUTY CYCLE = 1%
+ 4 V
tr
td @ VBE(off) = 0 V
PNP
NPN
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
V1
APPROX
-12 V
TUT
RB
D1 60
0.4 2
IB1 = IB2
TJ = 25C
Figure 3. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1
0.01 1000
0.3
0.2
0.07
r(t), EFFECTIVE TRANSIENT
RqJC(t) = r(t) RqJC
RqJC = 6.25C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
THERMAL RESISTANCE (NORMALIZED)
0.7
0.5
0.1
0.05
0.03
0.02
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500
0.2
SINGLE PULSE
D = 0.5
0.05
0.1
0.01
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP)
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5
IC, COLLECTOR CURRENT (AMP)
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
Figure 5. Power Derating
2
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.3
100
5
2
0.5
0.2 BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
5203
TJ = 150C
CURVES APPLY BELOW RATED VCEO
100ms
1ms
dc
0.1
1
3
7
10
10730
25
25
T, TEMPERATURE (C)
050 75 100 125 15
20
15
10
5
PD, POWER DISSIPATION (WATTS)
2.5
0
2
1.5
1
0.5
TATC
TA
SURFACE
MOUNT
TC
0.7 5ms
50 70 200
500ms
ACTIVE−REGION SAFE−OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150_C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) < 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
C, CAPACITANCE (pF)
VR, REVERSE VOLTAGE (VOLTS)
Cib
0.04
30
1 4 10 40
TC = 25C
200
10
50
70
100
0.1 2 6 20
20
PNP
NPN
0.60.40.20.06
Figure 6. Capacitance
Cob
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP)
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6
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
NPN MJD112 PNP MJD117
Figure 7. DC Current Gain
Figure 8. Collector Saturation Region
Figure 9. “On Voltages
0.04
IC, COLLECTOR CURRENT (AMP)
300 0.06 0.2
2 k
800
4 k
hFE, DC CURRENT GAIN
VCE = 3 V
TJ = 125C
3 k
0.1 0.6
25C
-55C
1 k
0.4 1
6 k
400
600
2 4 0.04
300 0.06 0.2
2 k
800
4 k
hFE, DC CURRENT GAIN
3 k
0.1 0.6
25C
-55C
1 k
0.4 1
6 k
400
600
24
3.4
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.60.1 0.2 0.5 1025
IC =
0.5 A
1 A
1
3
1
0.04
IC, COLLECTOR CURRENT (AMP)
1.4
1
V, VOLTAGE (VOLTS)
2.2
1.8
0.6
0.2
TJ = 25C
VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V
VCE(sat) @ IC/IB = 250
0.06 0.2 20.1 0.60.4 1 4 0.04
IC, COLLECTOR CURRENT (AMP)
1.4
1
V, VOLTAGE (VOLTS)
2.2
1.8
0.6
0.2
TJ = 25C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.06 0.2 20.1 0.60.4 1 4
20 50 100
3.4
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.60.1 0.2 0.5 10251
3
1
20 50 100
VBE @ VCE = 3 V
TC = 125CVCE = 3 V
4 A
TJ = 125C
2 A
TJ = 125C
IC =
0.5 A
1 A 4 A2 A
TYPICAL ELECTRICAL CHARACTERISTICS
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP)
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7
NPN MJD112 PNP MJD117
0.04
IC, COLLECTOR CURRENT (AMP)
0.06 0.2
0
*APPLIED FOR IC/IB < hFE/3
0.1 0.6
-55C TO 25C
0.4 1
-4.8 24
104
VBE, BASE-EMITTER VOLTAGE (VOLTS)
10-1
0-0.4
, COLLECTOR CURRENT (A)IC
103
102
101
100
+0.2 +0.4 +0.6
TJ = 150C
100C
REVERSE FORWARD
25C
VCE = 30 V
105
-0.6 -0.2 +0.8 +1 +1.2 +1.4
104
VBE, BASE-EMITTER VOLTAGE (VOLTS)
10-1
0+0.4
, COLLECTOR CURRENT (A)IC
103
102
101
100
-0.2 -0.4 -0.6
105
+0.6 +0.2 -0.8 -1 -1.2 -1.4
+0.8
-4
-3.2
-2.4
-1.6
-0.8
qVC FOR VBE
25C TO 150C
25C TO 150C
*qVC FOR VCE(sat)
0.04
IC, COLLECTOR CURRENT (AMP)
0.06 0.20.1 0.60.4 1 2 4
Figure 10. Temperature Coefficients
Figure 11. Collector Cut−Off Region
Figure 12. Darlington Schematic
BASE
EMITTER
COLLECTOR
8 k 120
PNP
BASE
EMITTER
COLLECTOR
8 k 120
NPN
0
-4.8
+0.8
-4
-3.2
-2.4
-1.6
-0.8
V, TEMPERATURE COEFFICIENTS (mV/ C)
V, TEMPERATURE COEFFICIENTS (mV/ C)
-55C TO 25C
*APPLIES FOR IC/IB < hFE/3
*qVC FOR VCE(sat)
qVB FOR VBE
25C TO 150C
-55C TO 25C
25C TO 150C
-55C TO 25C
VCE = 30 V
REVERSE FORWARD
TJ = 150C
100C
25C
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP)
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8
ORDERING INFORMATION
Device Package Type Package Shipping†
MJD112 DPAK
369C
75 Units / Rail
MJD112G DPAK
(Pb−Free)
MJD112−001 DPAK−3
369D
MJD112−1G DPAK−3
(Pb−Free)
MJD112RL DPAK
369C
1,800 Tape & Reel
MJD112RLG DPAK
(Pb−Free)
MJD112T4 DPAK
2,500 Tape & Reel
MJD112T4G DPAK
(Pb−Free)
NJVMJD112T4G DPAK
(Pb−Free)
MJD117 DPAK
75 Units / Rail
MJD117G DPAK
(Pb−Free)
MJD117−001 DPAK−3
369D
MJD117−1G DPAK−3
(Pb−Free)
MJD117T4 DPAK
369C 2,500 Tape & Reel
MJD117T4G DPAK
(Pb−Free)
NJVMJD117T4G DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP)
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9
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
b
D
E
b3
L3
L4
b2
eM
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP)
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10
PACKAGE DIMENSIONS
123
4
V
SA
K
−T−
SEATING
PLANE
R
B
F
G
D3 PL
M
0.13 (0.005) T
C
E
J
H
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.350 0.380 8.89 9.65
R0.180 0.215 4.45 5.45
S0.025 0.040 0.63 1.01
V0.035 0.050 0.89 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z0.155 −−− 3.93 −−−
IPAK
CASE 369D−01
ISSUE C
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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