2N930A BIPOLAR NPN SILICON AMPLIFIER TRANSISTORS MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) FEATURES 5.33 (0.210) 4.32 (0.170) * SILICON PLANAR EPITAXIAL NPN TRANSISTOR 12.7 (0.500) min. * HERMETICALLY SEALED METAL PACKAGE 0.48 (0.019) 0.41 (0.016) dia. * CECC SCREENING OPTIONS AVAILABLE * SPACE QUALITY LEVELS AVAILABLE 2.54 (0.100) Nom. 3 1 2 APPLICATIONS: TO18 (TO-206AA) PACKAGE The 2N930A is designed for small general purpose and amplifier applications Underside View Pin 1 =Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector - Base Voltage 60V VCEO Collector - Emitter Voltage 45V VEBO Emitter - Base Voltage 6V IC Collector Current PD Total Device Dissipation 30mA @ TA =25C Derate above 25C PD Total Device Dissipation @ TC =25C Derate above 25C TSTG , TJ Operating and Storage Temperature Range 0.5W 350C / W 1.2W 146C / W -65 to +200C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5470 Issue 1 2N930A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit V(BR)CEO* OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage IC = 10mA IB = 0 45 V(BR)CBO Collector - Base Breakdown Voltage IC = 10A IE = 0 60 V(BR)EBO Emitter - Base Breakdown Voltage IE = 10A IC = 0 6 ICEO Collector Cut-off Current VCE = 5V IB = 0 2 ICBO Collector - Cut-off Current VCB = 45V IE = 0 2 ICES Collector - Cut-off Current VCE = 45V VBE = 0 2 nA TA =170C 2 A IEBO Emitter - Cut-off Current IC = 0 2 nA VCE(sat)* ON CHARACTERISTICS Collector - Emitter Saturation Voltage IC = 10mA IB = 0.5mA VBE(sat)* Base - Emitter Saturation Voltage IC = 10mA IB = 0.5mA 0.7 IC = 1.0A VCE = 5V 60 IC = 10A VCE = 5V 100 TA = - 55C 30 hFE* fT DC Current Gain VEB = 5V IC = 10mA VCE = 5V SMALL SIGNAL CHARACTERISTICS IC = 500A Current Gain Bandwidth Product f = 30MHz VCE = 5V IE = 0 Cob Output Capacitance hib Input Impedance hrb Voltage Feedback Ratio IE = 1mA hob Output Admittance f = 1kHz hfe Small Signal Current Gain NF Noise Figure 0.5 0.9 300 nA V -- 600 30 VCB = 5V f = 1MHz 25 VCB = 5V 150 VCE = 5V V MHz 6 pF 32 600 x10-6 1 mho 600 -- 3 dB IC = 10A RS = 10k f = 1.0kHz * Pulse Test: tp 300s, 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5470 Issue 1