2N930A
BIPOLAR NPN SILICON
AMPLIFIER TRANSIST ORS
APPLICATIONS:
The 2N930A is designed for small general
purpose and amplifier applications
VCBO Collector – Base Voltage
VCEO Collector – Emitter Voltage
VEBO Emitter – Base Voltage
ICCollector Current
PDTotal Device Dissipation @ TA=25°C
Derate above 25°C
PDTotal Device Dissipation @ TC=25°C
Derate above 25°C
TSTG , TJOperating and Storage Temperature Range
60V
45V
6V
30mA
0.5W
350°C / W
1.2W
146°C / W
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO18 (TO-206AA) PACKAGE
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise stated)
Pin 1 =Emitter
Underside View
Pin 2 = Base Pin 3 = Collector
13 2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.33 (0.210)
4.32 (0.170)
12.7 (0.500)
min.
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETICALLY SEALED METAL PACKAGE
• CECC SCREENING OPTIONS AVAILABLE
• SPACE QUALITY LEVELS AVAILABLE
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5470
Issue 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Test Conditions Min. Typ. Max. Unit
V(BR)CEO* Collector – Emitter Breakdown Voltage
V(BR)CBO Collector – Base Breakdown Voltage
V(BR)EBO Emitter – Base Breakdown Voltage
ICEO Collector Cut-off Current
ICBO Collector – Cut-off Current
ICES Collector – Cut-off Current
IEBO Emitter – Cut-off Current
VCE(sat)* Collector – Emitter Saturation Voltage
VBE(sat)* Base – Emitter Saturation Voltage
hFE* DC Current Gain
fTCurrent Gain Bandwidth Product
Cob Output Capacitance
hib Input Impedance
hrb Voltage Feedback Ratio
hob Output Admittance
hfe Small Signal Current Gain
NF Noise Figure
V
nA
nA
µA
nA
V
—
MHz
pF
Ω
x10-6
µmho
—
dB
45
60
62
2
2
2
2
0.5
0.7 0.9
60
100 300
30 600
30
6
25 32
600
1
150 600
3
2N930A
IC= 10mA IB= 0
IC= 10µAI
E= 0
IE= 10µAI
C= 0
VCE = 5V IB= 0
VCB = 45V IE= 0
VCE = 45V VBE = 0
TA=170°C
VEB = 5V IC= 0
IC= 10mA IB= 0.5mA
IC= 10mA IB= 0.5mA
IC= 1.0µAV
CE = 5V
IC= 10µAV
CE = 5V
TA= - 55°C
IC= 10mA VCE = 5V
IC= 500µAV
CE = 5V
f = 30MHz
IE= 0 VCB = 5V
f = 1MHz
IE= 1mA VCB = 5V
f = 1kHz
VCE = 5V IC= 10µA
RS= 10kΩ
f = 1.0kHz
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated)
* Pulse Test: tp≤300µs, δ≤2%
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5470
Issue 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
