DF005S thru DF10S
Vishay General Semiconductor
Document Number: 88573
Revision: 30-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for automated placement
• High surge current capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 250 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for SMPS, lighting ballaster, adapter,
battery charger, home appliances, office equipment,
and telecommunication applications.
MECHANICAL DATA
Case: DFS
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
PRIMARY CHARACTERISTICS
IF(AV) 1 A
VRRM 50 V to 1000 V
IFSM 50 A
IR5 µA
VF1.1 V
TJ max. 150 °C
Case Style DFS
~
~
~
~
Note:
(1) Units mounted on P.C.B. with 0.51 x 0.51" (13 x 13 mm) copper pads
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT
Device marking code DF005S DF01S DF02S DF04S DF06S DF08S DF10S
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward output rectified
current at TA = 40 °C (1) IF(AV) 1.0 A
Peak forward surge current single half
sine-wave superimposed on rated load IFSM 50 A
Rating for fusing (t < 8.3 ms) I2t 10 A2s
Operating junction and storage
temperature range TJ, TSTG - 55 to + 150 °C
DF005S thru DF10S
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88573
Revision: 30-Jan-08
2
Note:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
Note:
(1) Units mounted on P.C.B. with 0.51 x 0.51" (13 x 13 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT
Maximum instantaneous
forward voltage drop per diode 1.0 A VF 1.1 V
Maximum DC reverse
current at rated DC blocking
voltage per diode
TA = 25 °C
TA = 125 °C IR 5.0
500 µA
Typical junction
capacitance per diode (1) CJ 25 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL DF005S DF01S DF02S DF04S DF06S DF08S DF10S UNIT
Typical thermal resistance (1) RθJA
RθJL
40
15 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
DF06S-E3/45 0.399 45 50 Tube
DF06S-E3/77 0.399 77 1500 13" diameter paper tape and reel
Figure 1. Derating Curve Output Rectified Current
20 40 60 80100 120 140 160
0
0.5
1.0
Ambient Temperature (°C)
Average Forward Output Current (A)
60 Hz
Resistive or
Inductive Load
P.C.B. Mounted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
110 100
0
10
20
30
40
50
60
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
TJ = 150 °C
Single Sine-Wave
1.0 Cycle
DF005S thru DF10S
Vishay General Semiconductor
Document Number: 88573
Revision: 30-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.4 0.6 0.81.0 1.2 1.4
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
020 40 60 80100
0.01
0.1
1
10
100
TJ = 125 °C
TJ = 50 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance
110 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.01 0.1 110 100
0.1
1
10
100
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
MountingPad La yout
0.255 (6.5)
0.245 (6.2)
0.013 (0.330)
0.009 (0.241)
0.060 (1.524)
0.040 (1.016)
0.404 (10.3)
0.013 (0.330)
0.003 (0.076)
0.047 (1.20)
0.040 (1.02)
0.205 (5.2)
0.195 (5.0)
0.335 (8.51)
0.320 (8.13)
0.130 (3.3)
0.120 (3.05)
45°
0.386 (9.80)
Case Style DFS
0.404 MAX.
(10.26 MAX.)
0.205 (5.2)
0.195 (5.0)
0.047 MIN.
(1.20 MIN.)
0.060 MIN.
(1.52 MIN.)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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