HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBTs January 1997 Features Description * 24A, 600V at TC = 25oC The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. * 600V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss Ordering Information PART NUMBER PACKAGE The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. BRAND HGTP12N60C3 TO-220AB P12N60C3 HGT1S12N60C3 TO-262AA S12N60C3 HGT1S12N60C3S TO-263AB S12N60C3 Terminal Diagram NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S12N60C3S9A. N-CHANNEL ENHANCEMENT MODE C Formerly Developmental Type TA49123. G E Packaging JEDEC TO-220AB JEDEC TO-262AA EMITTER COLLECTOR GATE EMITTER COLLECTOR GATE COLLECTOR (FLANGE) A COLLECTOR (FLANGE) JEDEC TO-263AB M A A COLLECTOR (FLANGE) GATE EMITTER HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1997 3-29 File Number 4040.3 HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTES: HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S 600 24 12 96 20 30 24A at 600V 104 0.83 100 -40 to 150 260 4 13 UNITS V A A A V V W W/oC mJ oC oC s s 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 25. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector-Emitter Breakdown Voltage BVCES IC = 250A, VGE = 0V 600 - - V Emitter-Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 24 30 - V Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Gate-Emitter Leakage Current Switching SOA Gate-Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time VCE = BVCES TC = 25oC - - 250 A VCE = BVCES TC = 150oC - - 1.0 mA IC = IC110, VGE = 15V TC = 25oC - 1.65 2.0 V TC = 150oC - 1.85 2.2 V TC = 25oC 3.0 5.0 6.0 V - - 100 nA VCE(PK) = 480V 80 - - A VCE(PK) = 600V 24 - - A IC = IC110, VCE = 0.5 BVCES - 7.6 - V QG(ON) IC = IC110, VCE = 0.5 BVCES VGE = 15V - 48 55 nC VGE = 20V - 62 71 nC tD(ON)I TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 25, - 14 - ns - 16 - ns - 270 400 ns - 210 275 ns ICES VCE(SAT) VGE(TH) IC = 250A, VCE = VGE IGES VGE = 20V SSOA TJ = 150oC RG = 25 VGE = 15V L = 100H VGEP tRI tD(OFF)I Current Fall Time tFI Turn-On Energy EON - 380 - J Turn-Off Energy (Note 3) EOFF - 900 - J Thermal Resistance RJC - - 1.2 oC/W L = 100H NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. 3-30 HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s 70 60 50 TC = 150oC 40 TC = 25oC 30 TC = -40oC 20 10 0 4 8 6 10 VGE = 15.0V 60 50 10.0V 40 30 9.0V 20 8.5V 8.0V 10 0 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V 60 50 40 TC = -40oC TC = 150oC 20 0 TC = 25oC 0 1 2 3 4 TC = -40oC 60 TC = 25oC 50 40 TC = 150oC 30 20 10 0 0 1 2 3 4 5 15 10 5 150 FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE tSC , SHORT CIRCUIT WITHSTAND TIME (s) ICE , DC COLLECTOR CURRENT (A) 20 75 100 125 TC , CASE TEMPERATURE (oC) 10 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE = 15V 50 8 PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V 70 5 FIGURE 3. COLLECTOR-EMITTER ON-STATE VOLTAGE 0 25 6 80 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 25 4 FIGURE 2. SATURATION CHARACTERISTICS 80 10 2 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS 30 7.5V 7.0V 0 VGE, GATE-TO-EMITTER VOLTAGE (V) 70 12.0V 70 14 12 PULSE DURATION = 250s, DUTY CYCLE <0.5%, TC = 25oC 80 FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE 140 20 VCE = 360V, RGE = 25, TJ = 125oC 120 ISC 100 15 80 60 10 40 tSC 5 10 13 11 12 14 VGE , GATE-TO-EMITTER VOLTAGE (V) 20 15 FIGURE 6. SHORT CIRCUIT WITHSTAND TIME 3-31 ISC, PEAK SHORT CIRCUIT CURRENT (A) 80 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) Typical Performance Curves HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S Typical Performance Curves 400 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V tD(OFF)I , TURN-OFF DELAY TIME (ns) tD(ON)I , TURN-ON DELAY TIME (ns) 100 (Continued) 50 VGE = 10V 30 20 VGE = 15V 10 5 10 15 20 25 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 300 VGE = 15V VGE = 10V 200 100 30 5 ICE , COLLECTOR-EMITTER CURRENT (A) FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 30 FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 300 200 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 100 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V VGE = 10V tFI , FALL TIME (ns) tRI , TURN-ON RISE TIME (ns) 25 10 15 20 ICE , COLLECTOR-EMITTER CURRENT (A) VGE = 15V 10 200 VGE = 10V or 15V 100 90 5 80 5 10 15 20 25 ICE , COLLECTOR-EMITTER CURRENT (A) 30 FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 5 30 FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 2.0 3.0 TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V EOFF , TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) 25 10 15 20 ICE , COLLECTOR-EMITTER CURRENT (A) 1.5 VGE = 10V 1.0 VGE = 15V 0.5 0 5 25 10 15 20 ICE , COLLECTOR-EMITTER CURRENT (A) 2.5 2.0 1.5 VGE = 10V or 15V 1.0 0.5 0 30 FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT TJ = 150oC, RG = 25, L = 100H, VCE(PK) = 480V 5 10 15 20 25 ICE , COLLECTOR-EMITTER CURRENT (A) 30 FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 3-32 HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S TJ = 150oC, TC = 75oC RG = 25, L = 100H 100 VGE = 10V VGE = 15V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) 10 PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 1.2oC/W 1 5 10 20 ICE, COLLECTOR-EMITTER CURRENT (A) 100 30 FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR-EMITTER CURRENT VCE , COLLECTOR - EMITTER VOLTAGE (V) FREQUENCY = 1MHz CIES C, CAPACITANCE (pF) 1500 1000 500 CRES 0 0 COES 5 10 15 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 25 FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE ZJC , NORMALIZED THERMAL RESPONSE 80 60 LIMITED BY CIRCUIT 40 20 0 0 100 200 300 400 500 600 VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 14. SWITCHING SAFE OPERATING AREA 2500 2000 TJ = 150oC, VGE = 15V, RG = 25, L = 100H IG REF = 1.276mA, RL = 50, TC = 25oC 600 480 15 12 VCE = 600V 360 9 240 6 VCE = 400V VCE = 200V 120 0 0 10 3 20 30 40 QG , GATE CHARGE (nC) 50 60 0 FIGURE 16. GATE CHARGE WAVEFORMS 100 0.5 0.2 t1 0.1 10-1 PD 0.05 t2 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) 100 FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 3-33 101 VGE, GATE-EMITTER VOLTAGE (V) fMAX , OPERATING FREQUENCY (kHz) 200 (Continued) ICE, COLLECTOR-EMITTER CURRENT (A) Typical Performance Curves HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S Test Circuit and Waveform 90% L = 100H 10% VGE RHRP1560 EOFF EON VCE RG = 25 90% + - VDD = 480V ICE 10% tD(OFF)I tFI tRI tD(ON)I FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I+ tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turnoff. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. ECCOSORBD is a Trademark of Emerson and Cumming, Inc. 3-34