SEMICONDUCTOR
3-29
HGTP12N60C3, HGT1S12N60C3,
HGT1S12N60C3S
24A, 600V, UFS Series N-Channel IGBTs
Features
• 24A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Formerly Developmental Type TA49123.
Description
The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC.
The IGBT is ideal f or many high v oltage s witching applications
operating at moderate frequencies where lo w conduction losses
are essential, such as: A C and DC motor controls, po wer sup-
plies and drivers f or solenoids , rela ys and contactors.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
Ordering Information
PART NUMBER PACKAGE BRAND
HGTP12N60C3 TO-220AB P12N60C3
HGT1S12N60C3 TO-262AA S12N60C3
HGT1S12N60C3S TO-263AB S12N60C3
NO TE: When ordering, use the entire part number . Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S12N60C3S9A. C
E
G
Packaging
JEDEC TO-220AB JEDEC TO-262AA
JEDEC TO-263AB
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
GATE
COLLECTOR
EMITTER
COLLECTOR
(FLANGE)
A
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
A
A
M
COLLECTOR
(FLANGE)
GATE
EMITTER
January 1997
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997 File Number 4040.3
3-30
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTP12N60C3, HGT1S12N60C3,
HGT1S12N60C3S UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 24 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 96 A
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . .SSOA 24A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD104 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL260 oC
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 4µs
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 13 µs
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RGE = 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector-Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V
Emitter-Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 24 30 - V
Collector-Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA
VCE = BVCES TC = 150oC - - 1.0 mA
Collector-Emitter Saturation Voltage VCE(SAT) IC = IC110,
VGE = 15V TC = 25oC - 1.65 2.0 V
TC = 150oC - 1.85 2.2 V
Gate-Emitter Threshold Voltage VGE(TH) IC = 250µA,
VCE = VGE TC = 25oC 3.0 5.0 6.0 V
Gate-Emitter Leakage Current IGES VGE = ±20V - - ±100 nA
Switching SOA SSOA TJ = 150oC
RG = 25Ω
VGE = 15V
L = 100µH
VCE(PK) = 480V 80 - - A
VCE(PK) = 600V 24 - - A
Gate-Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES - 7.6 - V
On-State Gate Charge QG(ON) IC = IC110,
VCE = 0.5 BVCES VGE = 15V - 48 55 nC
VGE = 20V - 62 71 nC
Current Turn-On Delay Time tD(ON)I TJ = 150oC,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15V,
RG = 25Ω,
L = 100µH
-14-ns
Current Rise Time tRI -16-ns
Current Turn-Off Delay Time tD(OFF)I - 270 400 ns
Current Fall Time tFI - 210 275 ns
Turn-On Energy EON - 380 - µJ
Turn-Off Energy (Note 3) EOFF - 900 - µJ
Thermal Resistance RθJC - - 1.2 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S were
tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the
true total Turn-Off Energy Loss. Turn-On losses include diode losses.
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
3-31
Typical Performance Curves
FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS
FIGURE 3. COLLECTOR-EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
ICE, COLLECTOR-EMITTER CURRENT (A)
VGE, GATE-TO-EMITTER VOLTAGE (V)
46810 12
0
10
20
40
50
60
70
14
30
80
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VCE = 10V
TC = 25oC
TC = 150oC
TC = -40oC
ICE, COLLECTOR-EMITTER CURRENT (A)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC
00246810
10
20
30
12.0V
8.5V
9.0V
8.0V
7.5V
7.0V
VGE = 15.0V
40
50
60
70
80
10.0V
ICE, COLLECTOR-EMITTER CURRENT (A)
0
30
012345
40
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
TC = 150oC
TC = 25oC
TC = -40oC
10
20
50
70
80
60
ICE, COLLECTOR-EMITTER CURRENT (A)
0
30
012 34 5
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TC = 25oC
TC = -40oC
TC = 150oC
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
10
20
40
50
60
70
80
25 50 75 100 125 150
0
5
10
15
20
25
ICE, DC COLLECTOR CURRENT (A)
TC, CASE TEMPERATURE (oC)
VGE = 15V
ISC, PEAK SHORT CIRCUIT CURRENT (A)
20
60
80
120
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
10 11 12
VGE, GATE-TO-EMITTER VOLTAGE (V)
14 1513
140
100
40
ISC
tSC
5
10
15
20 VCE = 360V, RGE = 25Ω, TJ = 125oC
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
3-32
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT FIGURE 10. TURN-OFF F ALL TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
Typical Performance Curves
(Continued)
tD(ON)I, TURN-ON DELAY TIME (ns)
10
20
30
5101520
I
CE, COLLECTOR-EMITTER CURRENT (A)
100
25 30
50
VGE = 10V
VGE = 15V
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
ICE, COLLECTOR-EMITTER CURRENT (A)
tD(OFF)I, TURN-OFF DELAY TIME (ns)
400
300
200
100 510 15 20 25 30
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
VGE = 10V
VGE = 15V
ICE, COLLECTOR-EMITTER CURRENT (A)
tRI, TURN-ON RISE TIME (ns)
5
10
100
51015202530
V
GE = 15V
VGE = 10V
200 TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
ICE, COLLECTOR-EMITTER CURRENT (A)
tFI, FALL TIME (ns)
100
5 10152025 30
200
300 TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
VGE = 10V or 15V
90
80
ICE, COLLECTOR-EMITTER CURRENT (A)
05101520
E
ON, TURN-ON ENERGY LOSS (mJ)
VGE = 15V
0.5
1.0
1.5
2.0
25 30
VGE = 10V
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
ICE, COLLECTOR-EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (mJ)
51015202530
0.5
1.0
1.5
2.0
2.5
3.0
0
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
VGE = 10V or 15V
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
3-33
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT FIGURE 14. SWITCHING SAFE OPERATING AREA
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE FIGURE 16. GATE CHARGE WAVEFORMS
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Typical Performance Curves
(Continued)
ICE, COLLECTOR-EMITTER CURRENT (A)
fMAX, OPERATING FREQUENCY (kHz)
5102030
10
100
200
1
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
(DUTY FACTOR = 50%)
RθJC = 1.2oC/W
TJ = 150oC, TC = 75oC
RG = 25Ω, L = 100µH
VGE = 15V
VGE = 10V
VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V)
ICE, COLLECTOR-EMITTER CURRENT (A)
0 100 200 300 400 500 600
0
20
40
60
80
TJ = 150oC, VGE = 15V, RG= 25Ω, L = 100µH
100
LIMITED BY
CIRCUIT
COES
CRES
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0 5 10 15 20 25
0
500
1000
1500
2000
2500
C, CAPACITANCE (pF)
CIES
FREQUENCY = 1MHz
VGE, GATE-EMITTER VOLTAGE (V)
VCE, COLLECTOR - EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
IG REF = 1.276mA, RL = 50Ω, TC = 25oC
0
240
120
360
480
600 15
12
9
6
3
0
VCE = 600V
VCE = 400V
VCE = 200V
10 20 30 40 50 600
t1, RECTANGULAR PULSE DURATION (s)
10-5 10-3 100101
10-4 10-1
10-2
100
ZθJC, NORMALIZED THERMAL RESPONSE
10-1
10-2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PDX ZθJC X RθJC) + TC
t1
t2
PD
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
3-34
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the de vice. With proper handling and application procedures ,
however, IGBTs are currently being extensively used in pro-
duction by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no dam-
age problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the inser tion into conductive material such
as “ECCOSORBD LD26” or equivalent.
2. When de vices are remov ed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. De vices should ne ver be inserted into or removed from
circuits with power on.
5. Gate V oltage Rating - Never e xceed the gate-voltage rat-
ing of VGEM. Exceeding the rated VGE can result in per-
manent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are es-
sentially capacitors. Circuits that lea ve the gate open-cir-
cuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These de vices do not hav e an internal
monolithic zener diode from gate to emitter. If gate pro-
tection is required an external zener is recommended.
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
Operating Frequency Information
Operating frequency information for a typical device
Figure 13) is presented as a guide for estimating device per-
formance for a specific application. Other typical frequency
vs collector current (ICE) plots are possible using the infor-
mation shown for a typical unit in Figures 4, 7, 8, 11 and 12.
The operating frequency plot (Figure 13) of a typical device
shows fMAX1 or fMAX2 whichever is smaller at each point.
The information is based on measurements of a
typical device and is bounded by the maximum rated junc-
tion temperature.
fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I+ tD(ON)I). Dead-
time (the denominator) has been arbitrarily held to 10% of
the on- state time for a 50% duty factor. Other definitions are
possible. tD(OFF)I and tD(ON)I are defined in Figure 19.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJMAX.
tD(OFF)I is important when controlling output ripple under a
lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJMAX -
T
C
)/RθJC. The sum of device switching and conduction losses
must not exceed PD. A 50% duty factor was used (Figure 13)
and the conduction losses (PC) are approximated b y PC = (VCE
x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 19. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the inte-
gral of the instantaneous po wer loss (I CE x VCE) during turn-
off . All tail losses are included in the calculation f or E OFF; i.e .
the collector current equals zero (ICE = 0).
Test Circuit and Waveform
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS
RG = 25Ω
L = 100µH
VDD = 480V
+
-
RHRP1560
tFI
tD(OFF)I tRI
tD(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF EON
HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S
