Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www. TriQuint.com Page 1 of 4 August 2011
ECG040B
InGaP HBT Gain Block
Product Features
• DC – 4 GHz
• +18.5 dBm P1dB at 1 GHz
• +35 dBm OIP3 at 1 GHz
• 16 dB Gain at 1 GHz
• 5.5 dB Noise Figure
• Available in Lead-free / green
SOT-89 Package Style
• Internally matched to 50 Ω
Applications
• Mobile Infrastructure
• CATV / FTTX
• W-LAN / ISM
• RFID
• WiMAX / WiBro
Product Description
The ECG040B is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. At 1 GHz, the ECG040B typically provides 15.8
dB of gain, +35 dBm Output IP3, and +18.5 dBm P1dB.
The ECG040B consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT process technology
and only requires DC-blocking capacitors, a bias resistor,
and an inductive RF choke for operation. The device is
ideal for wireless applications and is available in a low-
cost, surface-mountable lead-free/green/RoHS-compliant
SOT-89 package. All devices are 100% RF and DC tested.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the ECG040B will work for other various applications
within the DC to 4 GHz frequency range such as CATV
and mobile wireless.
Functional Diagram
RF IN GND
RF OUT
GND
1
2
3
4
Function Pin No.
Input 1
Output/Bias 3
Ground 2, 4
Specifications
(1)
Parameter Units Min Typ Max
Operational Bandwidth MHz DC 4000
Test Frequency MHz 1000
Gain dB 15.8
Output P1dB dBm +18.5
Output IP3
(2)
dBm +35
Test Frequency MHz 2000
Gain dB 12.8 15.3 17.5
Input Return Loss dB 22
Output Return Loss dB 16
Output P1dB dBm +18
Output IP3
(2)
dBm +35
Noise Figure dB 5.5
Device Voltage V 4.8
Device Current mA 70
1. Test conditions unless otherwise noted: 25 ºC, Supply Voltage = +6 V, Rbias = 16 Ω, 50 Ω System.
2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter Rating
Storage Temperature -65 to +150
°
C
RF Input Power (continuous) +12 dBm
Device Current 130 mA
Junction Temperature +160
°
C
Thermal Resistance, Rth 128
°
C/W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(1)
Parameter Units Typical
Frequency MHz 500 900 1900 2140
S21 dB 16.0 15.8 15.3 15.1
S11 dB -24 -24 -23 -21
S22 dB -27 -23 -16 -16
Output P1dB dBm +18.5 +18.5 +18 +19
Output IP3
(2)
dBm +35.5 +35 +34.5 +30.5
Noise Figure dB 4.6 5.5 5.8 3.8
Ordering Information
Part No. Description
ECG004B-G InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 package)
Standard T/R size = 1000 pieces on a 7” reel.
Not Recommended For
New Designs
Recommended replacement parts:
AG603-89G
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www. TriQuint.com Page 2 of 4 August 2011
ECG040B
InGaP HBT Gain Block
Typical Device RF Performance
Supply Bias = +6 V, R
bias
= 16 Ω
ΩΩ
Ω, I
cc
= 70 mA
Frequency MHz 100 500 900 1900 2140 2400 3500
S21 dB 16.2 16.0 15.8 15.3 15.1 14.8 13.9
S11 dB -23 -24 -24 -23 -21 -20 -17
S22 dB -32 -27 -23 -16 -16 -15 -11
Output P1dB dBm +18.4 +18.5 +18 +18 +18 +18 +17.5
Output IP3 dBm +35.6 +35.5 +35 +33.2 +32.9 +32.4
Noise Figure dB 4.6 4.7 4.9 5.1 5.3 5.4
1. Test conditions: T = 25 ºC, Supply Voltage = +6 V, Device Voltage = 4.8 V, Rbias = 16 Ω, Icc = 70 mA typical, 50 Ω System.
2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain
8
10
12
14
16
18
0 1 2 3 4 5 6
Frequency (GHz)
G a in (d B )
Return Loss
-40
-30
-20
-10
0
0123456
Frequency (GHz)
S 1 1 , S 2 2 (d B )
S11 S22
Icc vs. Vcc
0
20
40
60
80
100
120
140
160
180
200
0123456
Vcc (V)
Icc (mA)
25°C
OIP3 vs. Frequency
20
25
30
35
40
500 1000 1500 2000 2500 3000
Frequency (MHz)
25°C 85°C -40°C
Noise Figure vs. Frequency
2
3
4
5
6
500 1000 1500 2000
Frequency (MHz)
NF (dB)
P1dB vs. Frequency
12
14
16
18
20
22
24
500 1000 1500 2000 2500 3000
Frequency (MHz)
P1dB (dBm)
25°C 85°C -40°C
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www. TriQuint.com Page 3 of 4 August 2011
ECG040B
InGaP HBT Gain Block
Recommended Application Circuit
Recommended Component Values
Reference Frequency (MHz)
Designator 50 500 900 1900 2200 2500 3500
L1 820 nH 220 nH 68 nH 27 nH 22 nH 18 nH 15 nH
C1, C2, C4 .018 µF 1000 pF 100 pF 68 pF 68 pF 56 pF 39 pF
1. The proper values for the components are dependent upon the intended frequency of operation.
2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Ref. Desig. Value / Type Size
L1 39 nH wirewound inductor 0603
C1, C2 56 pF chip capacitor 0603
C3 0.018
µ
F chip capacitor 0603
C4 Do Not Place
R4 16
Ω
1% tolerance 0805
Recommended Bias Resistor Values
Supply
Voltage R1 value Size
6 V 17.1 ohms 0805
7 V 31.4 ohms 1210
8 V 46 ohms 1210
9 V 60 ohms 2010
10 V 74 ohms 2010
12 V 103 ohms 2512
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +6 V.
A
1% tolerance resistor is recommended.
Typical Device S-Parameters
S-Parameters (V
device
= +4.8 V, I
CC
= 70 mA, T = 25 °C, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -23.31 -179.51 16.19 177.81 -19.40 -0.03 -36.95 -170.80
500 -23.69 170.90 16.04 158.74 -19.30 -5.83 -27.31 -130.75
1000 -23.45 162.60 15.79 138.37 -19.12 -12.26 -21.40 -141.51
1500 -22.70 156.61 15.50 118.53 -19.03 -19.16 -18.24 -153.77
2000 -22.13 148.64 15.16 99.02 -18.71 -26.80 -16.09 -175.02
2500 -19.60 139.22 14.76 79.46 -18.36 -32.98 -14.17 167.68
3000 -19.24 121.52 14.31 61.06 -18.13 -41.04 -12.61 152.88
3500 -16.99 115.00 13.86 41.97 -17.78 -51.05 -11.16 130.54
4000 -15.40 97.66 13.33 23.55 -17.23 -58.84 -10.31 115.55
4500 -13.81 84.99 12.88 4.82 -16.82 -68.93 -9.04 97.41
5000 -11.78 64.76 12.19 -13.55 -16.84 -79.74 -7.54 76.41
5500 -11.08 52.37 11.70 -30.90 -16.58 -89.82 -7.37 64.41
6000 -9.31 35.87 10.98 -50.95 -16.15 -102.41 -6.42 46.46
Device S-parameters are available for download off of the website at: http://www.triquint.com
C1
Blocking
Capacitor
RF OUT
L1
RF Choke
C3
0.018 µF
R4
Bias
Resistor
RF IN
C4
Bypass
Capacitor
C2
Blocking
Capacitor
Vcc
Icc = 70 mA
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www. TriQuint.com Page 4 of 4 August 2011
ECG040B
InGaP HBT Gain Block
ECG040B-G Mechanical Information
This package is lead-free/Green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes.
Outline Drawing
Land Pattern
Product Marking
The component will be marked with an
“E040G” designator with an alphanumeric lot
code on the top surface of the package. The
obsolete tin-lead package is marked with an
“E040” designator followed by an
alphanumeric lot code; it may also have been
marked with a “J” designator followed by a
3-digit numeric lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
ESD Rating: Class 1A
Value: Passes between 250 and 500V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of
this device. Vias should use a .35mm (#80 / .0135”) diameter
drill and have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near
the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board
to a heatsink. Ensure that the ground / thermal via region
contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.