MMUN2211LT1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. * Simplifies Circuit Design * Reduces Board Space and Component Count * The SOT-23 package can be soldered using wave or reflow. The * modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace "T1" with "T3" in the Device Number to order the13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating http://onsemi.com PIN 3 COLLECTOR (OUTPUT) R1 PIN 1 BASE (INPUT) R2 PIN 2 EMITTER (GROUND) MARKING DIAGRAM 3 3 1 A8x 2 SOT-23 CASE 318 STYLE 6 1 2 A8x = Device Code x = (See Table) Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Device Package Shipping Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C PD *200 1.6 mW mW/C MMUN2211LT1 SOT-23 3000/Tape & Reel MMUN2212LT1 SOT-23 3000/Tape & Reel DEVICE MARKING AND RESISTOR VALUES ORDERING INFORMATION Marking R1(K) R2(K) MMUN2213LT1 SOT-23 3000/Tape & Reel MMUN2211LT1 A8A 10 10 MMUN2214LT1 SOT-23 3000/Tape & Reel MMUN2212LT1 A8B 22 22 MMUN2215LT1 SOT-23 3000/Tape & Reel MMUN2213LT1 A8C 47 47 MMUN2216LT1 SOT-23 3000/Tape & Reel MMUN2214LT1 A8D 10 47 MMUN2230LT1 SOT-23 3000/Tape & Reel MMUN2215LT1 A8E 10 SOT-23 3000/Tape & Reel A8F 4.7 MMUN2231LT1 MMUN2216LT1 MMUN2230LT1 A8G 1.0 1.0 MMUN2232LT1 SOT-23 3000/Tape & Reel MMUN2231LT1 A8H 2.2 2.2 MMUN2233LT1 SOT-23 3000/Tape & Reel MMUN2232LT1 A8J 4.7 4.7 MMUN2234LT1 SOT-23 3000/Tape & Reel MMUN2233LT1 A8K 4.7 47 MMUN2235LT1 SOT-23 3000/Tape & Reel MMUN2238LT1 SOT-23 3000/Tape & Reel MMUN2241LT1 SOT-23 3000/Tape & Reel Device MMUN2234LT1 A8L 22 47 MMUN2235LT1 A8M 2.2 47 MMUN2238LT1 A8R 2.2 MMUN2241LT1 A8U 100 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. Semiconductor Components Industries, LLC, 2001 November, 2001 - Rev. 3 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MMUN2211LT1/D MMUN2211LT1 Series THERMAL CHARACTERISTICS Rating Thermal Resistance - Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Symbol Value Unit RJA 625 C/W TJ, Tstg -65 to +150 C TL 260 10 C Sec Maximum Temperature for Soldering Purposes, Time in Solder Bath ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nAdc IEBO - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 4.0 0.1 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (Note 2.), (IC = 2.0 mA, IB = 0) V(BR)CEO 50 - - Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 140 350 350 - - - - - - - - - - - - - - VCE(sat) - - 0.25 Characteristic OFF CHARACTERISTICS Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 ON CHARACTERISTICS (Note 2.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1 (IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1 MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/ MMUN2235LT1/MMUN2238LT1 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. http://onsemi.com 2 Vdc MMUN2211LT1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 VOH 4.9 - - Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 1.54 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 2.2 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 2.88 130 k R1/R2 0.8 0.17 - - 0.8 0.055 0.38 0.038 1.0 0.21 - - 1.0 0.1 0.47 0.047 1.2 0.25 - - 1.2 0.185 0.56 0.056 ON CHARACTERISTICS (Note 3.) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k ) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k ) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 k ) VOL MMUN2211LT1 MMUN2212LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2213LT1 MMUN2241LT1 Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k ) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k ) MMUN2230LT1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k ) MMUN2215LT1 MMUN2216LT1 MMUN2233LT1 MMUN2238LT1 Input Resistor MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 MMUN2238LT1 MMUN2241LT1 Resistor Ratio MMUN2211LT1/MMUN2212LT1/MMUN2213LT1 MMUN2214LT1 MMUN2215LT1/MMUN2216LT1/MMUN2238LT1 MMUN2241LT1 MMUN2230LT1/MMUN2231LT1/MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2235LT1 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. http://onsemi.com 3 Vdc MMUN2211LT1 Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 250 200 1 IC/IB = 10 TA = -25C 25C 75C 0.1 150 100 0.01 RJA= 625C/W 50 0 -50 0 50 100 0.001 150 0 40 60 IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve Figure 2. VCE(sat) vs. IC VCE = 10 V TA = 75C 25C -25C 100 10 1 10 IC, COLLECTOR CURRENT (mA) 100 3 2 1 0 100 f = 1 MHz lE = 0 A TA = 25C 0 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) 1 0.1 0.01 VO = 5 V 1 2 3 30 50 40 10 TA = -25C 0 20 Figure 4. Output Capcitance 25C 10 10 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 0.001 80 4 1000 Figure 3. DC Current Gain IC, COLLECTOR CURRENT (mA) 20 TA, AMBIENT TEMPERATURE (5C) Cob, CAPACITANCE (pF) hFE, DC CURRENT GAIN (NORMALIZED) PD, POWER DISSIPATION (MILLIWATTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2211LT1 4 5 6 7 8 9 25C 75C 1 0.1 0 10 TA = -25C Vin, INPUT VOLTAGE (VOLTS) Figure 5. Output Current vs. Input Voltage 40 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current http://onsemi.com 4 50 MMUN2211LT1 Series - hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2212LT1 1000 1 TA = -25C IC/IB = 10 25C 75C 0.1 0.01 0.001 0 20 60 40 IC, COLLECTOR CURRENT (mA) 80 VCE = 10 V TA = 75C 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) vs. IC IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25C 1 0 10 20 30 50 40 75C 25C TA = -25C 10 1 0.1 0.01 VO = 5 V 0.001 0 2 4 6 8 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 2 0 VO = 0.2 V TA = -25C 10 75C 25C 1 0.1 0 100 Figure 8. DC Current Gain 4 3 -25C 25C 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current http://onsemi.com 5 50 10 MMUN2211LT1 Series 10 IC/IB = 10 1000 TA = -25C 25C 75C 1 0.1 0.01 0 20 40 60 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2213LT1 25C -25C 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) vs. IC Figure 13. DC Current Gain 100 0.8 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25C 0.6 0.4 0.2 10 20 30 25C 10 TA = -25C 1 0.1 0.01 VO = 5 V 0.001 50 40 75C 0 2 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 14. Output Capacitance 4 6 8 Vin, INPUT VOLTAGE (VOLTS) Figure 15. Output Current vs. Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) TA = 75C IC, COLLECTOR CURRENT (mA) 1 0 0 VCE = 10 V VO = 0.2 V TA = -25C 25C 75C 10 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage vs. Output Current http://onsemi.com 6 50 10 MMUN2211LT1 Series 1 IC/IB = 10 TA = -25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS MMUN2214LT1 300 VCE = 10 TA = 75C 250 25C 200 -25C 150 100 50 0 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Figure 17. VCE(sat) vs. IC Figure 18. DC Current Gain 100 f = 1 MHz lE = 0 A TA = 25C 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 25C TA = -25C 10 VO = 5 V 1 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) Figure 20. Output Current vs. Input Voltage Figure 19. Output Capacitance 10 TA = -25C VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 4 25C 75C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 21. Input Voltage vs. Output Current http://onsemi.com 7 50 10 MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2232LT1 1000 VCE = 10 V IC/IB =10 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = 75C 0.1 25C -25C 0.01 TA = 75C 100 10 1 0.001 4 8 12 16 20 24 0 28 25 IC, COLLECTOR CURRENT (mA) 50 75 100 125 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) vs. IC Figure 23. DC Current Gain 6 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25C 5 4 3 2 1 0 VO = 5 V 75C 25C 10 1 TA = -25C 0.1 0.01 0 10 20 30 40 50 60 0 2 4 6 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 24. Output Capacitance Figure 25. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 25C -25C VO = 0.2 V TA = -25C 75C 1 0.1 0 25C 10 20 IC, COLLECTOR CURRENT (mA) Figure 26. Output Voltage vs. Input Current http://onsemi.com 8 30 8 MMUN2211LT1 Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2233LT1 1000 IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 25C 100 75C 25C TA = -25C 0.01 TA = -25C 10 VCE = 10 V 1 0.001 2 7 12 17 22 27 1 32 100 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) vs. IC Figure 28. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25C 3.5 3 2.5 2 1.5 1 0.5 0 75C TA = -25C 10 1 0.1 25C VO = 5 V 0.01 0 10 20 30 40 50 60 0 2 4 6 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 29. Output Capacitance Figure 30. Output Current vs. Input Voltage 10 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 75C TA = -25C 25C 75C 1 0.1 0 12 18 6 24 IC, COLLECTOR CURRENT (mA) Figure 31. Input Voltage vs. Output Current http://onsemi.com 9 30 8 MMUN2211LT1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM P OR OTHER LOGIC Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 33. Open Collector Inverter: Inverts the Input Signal Figure 34. Inexpensive, Unregulated Current Source http://onsemi.com 10 MMUN2211LT1 Series INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 11 MMUN2211LT1 Series SOLDER STENCIL GUIDELINES The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 7 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. STEP 1 PREHEAT ZONE 1 RAMP" 200C 150C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 205 TO 219C PEAK AT SOLDER JOINT 170C 160C 150C 140C 100C 100C 50C STEP 6 STEP 7 VENT COOLING SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 35. Typical Solder Heating Profile http://onsemi.com 12 MMUN2211LT1 Series PACKAGE DIMENSIONS SOT-23 CASE 318-08 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 1 V B S 2 G C D H J K DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR http://onsemi.com 13 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MMUN2211LT1 Series Notes http://onsemi.com 14 MMUN2211LT1 Series Notes Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 15 MMUN2211LT1/D