Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 3 Publication Order Number:
MMUN2211LT1/D
1
MMUN2211LT1 Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
•Simplifies Circuit Design
•Reduces Board Space and Component Count
•The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
•Available in 8 mm embossed tape and reel. Use the Device
Number to order the 7 inch/3000 unit reel. Replace “T1” with
“T3” in the Device Number to order the13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
Total Power Dissipation @ TA = 25°C
(Note 1.) Derate above 25°CPD*200
1.6 mW
mW/°C
DEVICE MARKING AND RESISTOR VALUES
Device Marking R1(K) R2(K)
MMUN2211LT1 A8A 10 10
MMUN2212LT1 A8B 22 22
MMUN2213LT1 A8C 47 47
MMUN2214LT1 A8D 10 47
MMUN2215LT1 A8E 10 ∞
MMUN2216LT1 A8F 4.7 ∞
MMUN2230LT1 A8G 1.0 1.0
MMUN2231LT1 A8H 2.2 2.2
MMUN2232LT1 A8J 4.7 4.7
MMUN2233LT1 A8K 4.7 47
MMUN2234LT1 A8L 22 47
MMUN2235LT1 A8M 2.2 47
MMUN2238LT1 A8R 2.2 ∞
MMUN2241LT1 A8U 100 ∞
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
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SOT–23
CASE 318
STYLE 6
MARKING DIAGRAM
A8x = Device Code
x = (See Table)
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
12
3
12
3
A8x
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
MMUN2211LT1 SOT–23 3000/Tape & Reel
MMUN2212LT1 SOT–23 3000/Tape & Reel
MMUN2213LT1 SOT–23 3000/Tape & Reel
MMUN2214LT1 SOT–23 3000/Tape & Reel
MMUN2215LT1 SOT–23 3000/Tape & Reel
MMUN2216LT1 SOT–23 3000/Tape & Reel
MMUN2230LT1 SOT–23 3000/Tape & Reel
MMUN2231LT1 SOT–23 3000/Tape & Reel
MMUN2232LT1 SOT–23 3000/Tape & Reel
MMUN2233LT1 SOT–23 3000/Tape & Reel
MMUN2234LT1 SOT–23 3000/Tape & Reel
MMUN2235LT1 SOT–23 3000/Tape & Reel
MMUN2238LT1 SOT–23 3000/Tape & Reel
MMUN2241LT1 SOT–23 3000/Tape & Reel
MMUN2211LT1 Series
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2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance – Junction-to-Ambient (surface mounted) RθJA 625 °C/W
Operating and Storage Temperature Range TJ, Tstg –65 to +150 °C
Maximum Temperature for Soldering Purposes,
Time in Solder Bath TL260
10 °C
Sec
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – – 100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – – 500 nAdc
Emitter-Base Cutoff Current MMUN2211LT1
(VEB = 6.0 V, IC = 0) MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
MMUN2241LT1
IEBO –
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
4.0
0.1
mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 – – Vdc
Collector-Emitter Breakdown Voltage (Note 2.), (IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc
ON CHARACTERISTICS (Note 2.)
DC Current Gain MMUN2211LT1
(VCE = 10 V, IC = 5.0 mA) MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
MMUN2241LT1
hFE 35
60
80
80
160
160
3.0
8.0
15
80
80
80
160
160
60
100
140
140
350
350
5.0
15
30
200
150
140
350
350
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1
(IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1
MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/
MMUN2235LT1/MMUN2238LT1
VCE(sat) – – 0.25 Vdc
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
MMUN2211LT1 Series
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 3.)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k Ω) MMUN2211LT1
MMUN2212LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k Ω) MMUN2213LT1
(VCC = 5.0 V, VB = 5.0 V, RL = 1.0 k Ω) MMUN2241LT1
VOL –
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k Ω)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k Ω) MMUN2230LT1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k Ω) MMUN2215LT1
MMUN2216LT1
MMUN2233LT1
MMUN2238LT1
VOH 4.9 – – Vdc
Input Resistor MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
MMUN2238LT1
MMUN2241LT1
R1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
1.54
70
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
2.2
100
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
2.88
130
kΩ
Resistor Ratio MMUN2211LT1/MMUN2212LT1/MMUN2213LT1
MMUN2214LT1
MMUN2215LT1/MMUN2216LT1/MMUN2238LT1
MMUN2241LT1
MMUN2230LT1/MMUN2231LT1/MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2235LT1
R1/R2 0.8
0.17
–
–
0.8
0.055
0.38
0.038
1.0
0.21
–
–
1.0
0.1
0.47
0.047
1.2
0.25
–
–
1.2
0.185
0.56
0.056
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
MMUN2211LT1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211LT1
100
10
1
0.1
0.01
0.001 01234
Vin, INPUT VOLTAGE (VOLTS)
5678910
VO = 5 V
IC, COLLECTOR CURRENT (mA)
TA = –25°C
75°C25°C
1000
100
101 10 100
IC, COLLECTOR CURRENT (mA) 50
010203040
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
f = 1 MHz
lE = 0 A
TA = 25°C
VCE = 10 V
Figure 1. Derating Curve
250
200
150
100
50
0
–50 0 50 100 150
TA, AMBIENT TEMPERATURE (5°C)
Figure 2. VCE(sat) vs. IC
PD, POWER DISSIPATION (MILLIWATTS)
Cob, CAPACITANCE (pF)
hFE, DC CURRENT GAIN (NORMALIZED)
RθJA= 625°C/W
TA = 75°C
–25°C
25°C
1002030
IC, COLLECTOR CURRENT (mA)
10
1
0.1 40 50
Figure 3. DC Current Gain
Vin, INPUT VOLTAGE (VOLTS)
TA = –25°C
75°C
25°C
VO = 0.2 V
1
0.1
0.01
0.00102040608
0
IC, COLLECTOR CURRENT (mA)
IC/IB = 10
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TA = –25°C
75°C
25°C
Figure 4. Output Capcitance
Figure 5. Output Current vs. Input Voltage Figure 6. Input Voltage vs. Output Current
MMUN2211LT1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212LT1
Figure 7. VCE(sat) vs. IC
0.001
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
020 6080
IC/IB = 10
–
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TA = –25°C25°C
75°C
Figure 8. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
101 100
VCE = 10 V
hFE, DC CURRENT GAIN (NORMALIZED)
TA = 75°C
25°C–25°C
Cob, CAPACITANCE (pF)
Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage
100
0Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001 246810
0
IC, COLLECTOR CURRENT (mA)
100
10
1
0.1 10 20 30 40 50
Figure 11. Input Voltage vs. Output Current
50
010203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
f = 1 MHz
lE = 0 A
TA = 25°C
VO = 5 V
VO = 0.2 V
IC, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (VOLTS)
TA = –25°C
75°C 25°C
TA = –25°C
75°C25°C
MMUN2211LT1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2213LT1
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
Figure 12. VCE(sat) vs. IC
0 204060 80
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
IC/IB = 10 TA = –25°C
75°C
25°C
Figure 13. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
101 100
VCE = 10 V
hFE, DC CURRENT GAIN (NORMALIZED)
TA = 75°C
–25°C
25°C
Figure 14. Output Capacitance
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
f = 1 MHz
lE = 0 A
TA = 25°C
Cob, CAPACITANCE (pF)
024681
0
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (VOLTS)
Figure 15. Output Current vs. Input Voltage
VO = 5 V
IC, COLLECTOR CURRENT (mA)
TA = –25°C
75°C25°C
TA = –25°C
75°C25°C
100
10
1
0.1 010 20304050
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage vs. Output Current
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
75°C
TA = –25°C25°C
MMUN2211LT1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2214LT1
Figure 17. VCE(sat) vs. IC
IC, COLLECTOR CURRENT (mA)
020406080
1
0.1
0.01
0.001
IC/IB = 10 TA = –25°C
25°C
75°C
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
Figure 18. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
VCE = 10
300
250
200
150
100
50
02 4 6 8 15 20 40 50 60 70 80 90
hFE, DC CURRENT GAIN (NORMALIZED)
25°C
TA = 75°C
–25°C
4
3.5
3
2.5
2
1.5
1
0.5
0024681015
20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
f = 1 MHz
lE = 0 A
TA = 25°C
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
100
10
10246810
Figure 20. Output Current vs. Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
VO = 5 V
TA = –25°C
75°C 25°C
10
1
0.101020304050
Figure 21. Input Voltage vs. Output Current
IC, COLLECTOR CURRENT (mA)
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
TA = –25°C
75°C
25°C
MMUN2211LT1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2232LT1
TA = 75°C
IC/IB =10
12
1
0.1
0.001 168420
IC, COLLECTOR CURRENT (mA)
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
0.01
24 28
–25°C25°C
Figure 22. VCE(sat) vs. ICFigure 23. DC Current Gain
VCE = 10 V
0
1000
100
25 50
10
100
175
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
TA = 75°C
–25°C25°C
125
Figure 24. Output Capacitance Figure 25. Output Current vs. Input Voltage
f = 1 MHz
IE = 0 A
TA = 25°C
0
100
10
246
1
0.1
0.01 80
4
3
20
2
1
0
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Cob, CAPACITANCE (pF)
10 60504030
5
6VO = 5 V
75°C
TA = –25°C
25°C
Figure 26. Output Voltage vs. Input Current
VO = 0.2 V
0
10
10 20 30
1
0.1
IC, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (VOLTS)
TA = –25°C
75°C
25°C
MMUN2211LT1 Series
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TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2233LT1
75°C
TA = –25°C
Figure 27. VCE(sat) vs. IC
25°C
IC/IB = 10
12
1
0.1
0.001 177222
IC, COLLECTOR CURRENT (mA)
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
0.01
27 32
Figure 28. DC Current Gain
VCE = 10 V
1
1000
100
10
110
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
TA = –25°C
100
75°C25°C
Figure 29. Output Capacitance
f = 1 MHz
IE = 0 A
TA = 25°C
0
0.5
3
20
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
10 60504030
3.5
4
1.5
2.5
Figure 30. Output Current vs. Input Voltage
0
100
10
28
1
0.1
0.01 46
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
VO = 5 V
TA = –25°C
75°C
25°C
Figure 31. Input Voltage vs. Output Current
VO = 0.2 V
0
10
12 18 30
1
0.1
IC, COLLECTOR CURRENT (mA)
TA = –25°C
624
75°C
25°C
Vin, INPUT VOLTAGE (VOLTS)
MMUN2211LT1 Series
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TYPICAL APPLICATIONS FOR NPN BRTs
LOAD
+12 V
Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
IN
OUT
VCC
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
+12 V
Figure 33. Open Collector Inverter: Inverts
the Input Signal Figure 34. Inexpensive, Unregulated Current Source
MMUN2211LT1 Series
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The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT–23 POWER DISSIPATION
PD = TJ(max) – TA
RθJA
PD = 150°C – 25°C
556°C/W = 225 milliwatts
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
mined b y T J(max), the maximum rated junction temperature
of the die, RθJA, the thermal resistance from the device
junction to ambient, and the operating temperature, TA.
Using the values provided on the data sheet for the SOT–23
package, PD can be calculated as follows:
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225 milli-
watts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. There-
fore, the following items should always be observed in
order to minimize the thermal stress to which the devices
are subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
•The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
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STEP 1
PREHEAT
ZONE 1
RAMP"
STEP 2
VENT
SOAK"
STEP 3
HEATING
ZONES 2 & 5
RAMP"
STEP 4
HEATING
ZONES 3 & 6
SOAK"
STEP 5
HEATING
ZONES 4 & 7
SPIKE"
STEP 6
VENT
STEP 7
COOLING
200°C
150°C
100°C
50°C
TIME (3 TO 7 MINUTES TOTAL) TMAX
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
205° TO 219°C
PEAK AT
SOLDER JOINT
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
100°C
150°C
160°C
140°C
Figure 35. Typical Solder Heating Profile
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
170°C
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session t o the next. Figure 7 shows a typical heating profile
for use when soldering a surface mount device to a printed
circuit board. This profile will vary among soldering
systems but it is a good starting point. Factors that can
affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
TYPICAL SOLDER HEATING PROFILE
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because i t has a lar ge surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
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PACKAGE DIMENSIONS
SOT–23
CASE 318–08
ISSUE AF
DJ
K
L
A
C
BS
H
GV
3
12
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.1102 0.1197 2.80 3.04
INCHES
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K0.0140 0.0285 0.35 0.69
L0.0350 0.0401 0.89 1.02
S0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
MMUN2211LT1 Series
http://onsemi.com
14
Notes
MMUN2211LT1 Series
http://onsemi.com
15
Notes
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