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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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January 2007
2007 Fairchild Sem iconductor Corporation www.fairchildsemi.com
FDY3000NZ Rev B
FDY3000NZ
Dual N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This Dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON)
@ VGS = 2.5v.
Applications
x Li-Ion Battery Pack
Features
x 600 mA, 20 V RDS(ON)
= 700 m:@ VGS = 4.5 V
RDS(ON)
= 850 m: @ VGS = 2.5 V
x ESD protection diode (note 3)
x RoHS Compliant
Absolute Maxim um Ratings TA=25oC unless otherwise noted
Sym bol Param eter Ratings Units
VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage r 12 V
ID Drain Current – Continuous (Note 1a) 600 mA
– Pulsed 1000
PD Power Dissipation (Steady State) (Note 1a) 625 mW
(Note 1b) 446
TJ, TSTG Operating and Storage Junction Temperature
Range
–55 to +150 qC
Therm al Characteristics
RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 200 qC/W
RTJA Thermal Resistance, Junction-to-Ambient (Note 1b) 280
Package Marking and Ordering Inform ation
Device Marking Device Reel Size Tape width Quantity
C FDY3000NZ 7 ’’ 8 mm 3000 units
FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench
MOSFET
1
3
5
2
4
6
S1D1
G2
S2
D2
G1
4
6
5
3
1
2
tm
January 2007
FDY3000NZ Rev B www.fairchildsemi.com
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown
Voltage
VGS = 0 V, ID = 250 PA20 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 PA, Referenced to 25qC 14 mV/qC
IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 PA
VGS = r 12 V, VDS = 0 V r 10 PA
IGSS Gate–Body Leakage,
VGS = r 4.5 V, VDS = 0 V r 1 PA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 PA0.6 1.0 1.3 V
'VGS(th)
'TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 PA, Referenced to 25qC– 3 mV/qC
RDS(on) Static Drain–Source
On–Resistance
VGS = 4.5 V, ID = 600 mA
VGS = 2.5 V, ID = 500 mA
VGS = 1.8 V, ID = 150 mA
VGS = 4.5 V, ID=600mA, TJ= 125qC
0.25
0.37
0.73
0.35
0.70
0.85
1.25
1.00 :gFS Forward Transconductance VDS = 5 V, ID = 600 mA 1.8 S
Dynamic Characteristics
Ciss Input Capacitance 60 pF
Coss Output Capacitance 20 pF
Crss Reverse Transfer Capacitance
VDS = 10 V, V GS = 0 V,
f = 1.0 MHz
10 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 6 12 ns
tr Turn–On Rise Time 8 16 ns
td(off) Turn–Off Delay Time 8 16 ns
tf Turn–Off Fall Time
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 : 2.4 4.8 ns
Qg Total Gate Charge 0.8 1.1 nC
Qgs Gate–Source Charge 0.16 nC
Qgd Gate–Drain Charge
VDS = 10 V, ID = 600 mA,
VGS = 4.5 V
0.26 nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 150 mA (Note 2) 0.7 1.2 V
trr Diode Reverse Recovery Time 8 nS
Qrr Diode Reverse Recovery Charge
IF = 600 mA,
dIF/dt = 100 A/µs 1 nC
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design
a) 200°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 280°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2.Pulse Test: Pulse Width < 300Ps,
Duty Cycle < 2.0%
3. The diode connected between the gate
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDY3000NZ Rev B www.fairchildsemi.com
Typical Characteristics
0
0.2
0.4
0.6
0.8
1
0 0.25 0.5 0.75 1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
2.5V
2.0V
V
GS
= 4.5V 3.0V
3.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 0.2 0.4 0.6 0.8 1
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 2.0V
2.5V
3.5V
4.5V
3.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 600mA
V
GS
= 4.5V
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1 2 3 4 5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 300mA
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
0.2
0.4
0.6
0.8
1
0.5 1 1.5 2 2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
0 0.2 0.4 0.6 0.8 1 1.2
V
SD
, BODY DIODE FORW ARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDY3000NZ Rev B www.fairchildsemi.com
Typical Characteristics
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 600mA
V
DS
= 5V
15V
10V
0
10
20
30
40
50
60
70
80
90
100
0 4 8 12 16 20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC
10s
1s 100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
TJA
= 280
o
C/W
T
A
= 25
o
C
10ms
1ms
0
5
10
15
20
25
30
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
TJA
= 280°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
R
TJA
(t) = r(t) * R
TJA
R
TJA
=280 °C/W
T
J
- T
A
= P * R
TJA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
SOT−563
CASE 419BH
ISSUE O
0.720.30
0.50
1.42
0.50
1.70
1.50
0.20 0.50
1.70
1.50
1.30
1.10
46
130.1 C B A
B
A
0.60
0.50
0.20
0.08
0.10
0.00 CSEATING PLANE
0.05 C
C
C0.30
0.10
0.46
0.20
0.31
0.15
0.10 MCAB
0.05 MC
NOTES: UNLESS OTHERWISE SPECIFIED.
A. REFERENCE TO JEDEC MO293.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
CDOES NOT COMPLY JEDEC STANDARD VALU
E.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSION.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
F. LANDPATTERN RECOMMENDATION GENERATE
D
WITH IPC LANDPATTERN GENERATOR
TOP VIEW
BOTTOM VIEW
LAND PATTERN
RECOMMENDATION
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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