5STF 09D1420 5STF 09D1420 Old part no. TR 907-850-14 Fast Thyristor Properties Amplifying gate High operational capability Optimized turn-off parameters Applications Power switching applications Key Parameters V DRM, V RRM = 1 400 I TAV = 847 I TSM = 13.0 V TO = 1.231 r T = 0.317 t q = 20 V A kA V m s Types VRRM, VDRM 5STF 09D1420..1425 5STF 09D1220..1225 1 400 V 1 200 V Conditions: Tj = -40 / 125 C, half sine waveform, f = 50 Hz, note 1 Mechanical Data Fm Mounting force m Weight DS Surface creepage distance 25 mm Da Air strike distance 14 mm 10 2 kN 0.26 kg Fig. 1 Case ABB s.r.o. Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic tel.: +420 261 306 250, http://www.abb.com/semiconductors TS - TR/254/07 Jul-10 1 of 11 5STF 09D1420 Maximum Ratings VRRM VDRM ITRMS Repetitive peak reverse and off-state voltage Maximum Limits Unit 1 400 1 200 V 1 330 A 847 A tp = 10 ms tp = 8.3 ms 13 000 13 900 A tp = 10 ms tp = 8.3 ms 845 000 800 000 A2s 800 A/s 1 000 V/s 5STF 09D1420..1425 5STF 09D1220..1225 Tj = -40 / 125 C, note 1 RMS on-state current Tc = 70 C, half sine waveform, f = 50 Hz ITAVm Average on-state current Tc = 70 C, half sine waveform, f = 50 Hz ITSM Peak non-repetitive surge half sine pulse, VR = 0 V I2t Limiting load integral half sine pulse, VR = 0 V (diT/dt)cr Critical rate of rise of on-state current IT = ITAVm, half sine waveform, f = 50 Hz, VD = 2/3 VDRM, tr = 0.3 s, IGT = 2 A (dvD/dt)cr Critical rate of rise of off-state voltage VD = 2/3 VDRM PGAVm Maximum average gate power losses 3 W IFGM Peak gate current 10 A VFGM Peak gate voltage 12 V VRGM Reverse peak gate voltage 10 V Tjmin - Tjmax Operating temperature range -40 / 125 C Tstgmin Tstgmax Storage temperature range -40 / 125 C Unless otherwise specified Tj = 125 C Note 1: De-rating factor of 0.13% VRRM or VDRM per C is applicable for Tj below 25 C ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 2 of 11 5STF 09D1420 Characteristics Value min. VTM typ. Maximum peak on-state voltage Unit max. 1.710 V ITM = 1 500 A VT0 Threshold voltage 1.231 V rT Slope resistance 0.317 m 70 mA 70 mA 2.0 s 20.0 s IT1 = 1 335 A, IT2 = 4 006 A IDM Peak off-state current VD = VDRM IRM Peak reverse current VR = VRRM tgd Delay time Tj = 25 C, VD = 0.4 VDRM, ITM = ITAVm, tr = 0.3 s, IGT = 2 A tq1 Turn-off time IT = 500 A, diT/dt = -50 A/s, VR = 100 V, VD = 2/3 VDRM, dvD/dt = 50 V/s group of tq 5STF 09D1420 5STF 09D1220 5STF 09D1425 5STF 09D1225 Qrr 25.0 Recovery charge 380 C 140 A the same conditions as at tq1 IrrM Reverse recovery current the same conditions as at tq1 IH Holding current Tj = 25 C Tj = 125 C 250 150 mA IL Latching current Tj = 25 C Tj = 125 C 1 500 1 000 mA VGT Gate trigger voltage Tj = - 40 C Tj = 25 C Tj = 125 C VD = 12V, IT = 4 A IGT Gate trigger current VD = 12V, IT = 4 A Tj = - 40 C Tj = 25 C Tj = 125 C V 0.25 4 3 2 mA 10 1000 500 300 Unless otherwise specified Tj = 125 C ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 3 of 11 5STF 09D1420 Thermal Parameters Thermal resistance junction to case Rthjc Value Unit 32.0 K/kW double side cooling Rthch anode side cooling 52.0 cathode side cooling 83.0 Thermal resistance case to heatsink 10.0 K/kW double side cooling single side cooling 20.0 Transient Thermal Impedance Analytical function for transient thermal impedance 5 R i (1 - exp( -t / i )) 2 3 4 5 i ( s ) 0.4857 0.2162 0.0762 0.0043 0.0006 Ri( K/kW ) 13.07 8.03 8.20 2.57 0.13 35 i =1 Conditions: Fm = 10 2 kN, Double side cooled Correction for periodic waveforms 180 sine: 1 add 2.3 K/kW 180 rectangular: add 3.1 K/kW 120 rectangular: add 5.2 K/kW 60 rectangular: add 8.7 K/kW Transient thermal impedance junction to case Zthjc ( K/kW ) Z thjc = i 30 25 20 15 10 5 0 0.001 0.01 0.1 1 10 Square wave pulse duration t d ( s ) Fig. 2 Dependence transient thermal impedance junction to case on square pulse ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 4 of 11 5STF 09D1420 IT ( A ) On-State Characteristics T j = 25 C 5000 125 C 4000 3000 2000 1000 0 0 1 2 3 V T ( V 4) Fig. 3 Maximum on-state characteristics Gate Trigger Characteristics VG ( V ) VG ( V ) 6 DC 5 -40 C 4 +25 C 14 12 V GTmax 10 50 s 8 1 ms 3 I GTmax 6 2 +125 C 4 V GTmin 1 10 ms 2 DC 0 0 0 I GTmin 0.2 0.4 0.6 Fig. 4 Gate trigger characteristics 0.8 1 IG ( A ) 0 2 4 6 8 10 12 IG ( A ) Fig. 5 Maximum peak gate power loss ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 5 of 11 5STF 09D1420 Surge Characteristics 1.2 25 1 20 0.8 14 ITSM ( kA ) i 2 dt i 2dt (106 A2s) ITSM ( kA ) 30 12 10 8 15 0.6 VR = 0 V 6 10 0.4 I TSM 4 V R 0.5 V DRM 5 0.2 2 0 1 10 t ( ms ) 0 100 Fig. 6 Surge on-state current vs. pulse length, half sine wave, single pulse, VR = 0 V, Tj = Tjmax 0 1 10 100 Number n of cycles at 50 Hz Fig. 7 Surge on-state current vs. number of pulses, half sine wave, Tj = Tjmax ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 6 of 11 5STF 09D1420 Power Loss and Maximum Case Temperature Characteristics 60 90 120 180 DC 1500 = 30 PT ( W ) PT ( W ) = 30 270 DC 1500 1000 1000 500 500 0 0 0 200 400 600 800 I TAV 0 1000 (A) Fig. 8 On-state power loss vs. average on-state current, sine waveform, f = 50 Hz, T = 1/f 130 200 400 600 800 1000 I TAV ( A ) Fig. 9 On-state power loss vs. average on-state current, square waveform, f = 50 Hz, T = 1/f 130 TC ( C ) TC ( C ) 60 90 120 180 120 120 110 110 100 100 90 90 80 80 DC 70 DC 270 70 = 30 60 90 = 30 120 180 60 60 90 120 180 800 1000 60 0 200 400 600 800 1000 0 200 400 600 I TAV ( A ) Fig. 10 Max. case temperature vs. aver. on-state current, sine waveform, f = 50 Hz, T = 1/f I TAV ( A ) Fig. 11 Max. case temperature vs. aver. on-state current, square waveform, f = 50 Hz, T = 1/f Note 2: Figures number 8 / 11 have been calculated without considering any turn-on and turn-off losses. They are valid for f = 50 or 60 Hz operation. ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 7 of 11 5STF 09D1420 Maximum values of turn-off time at application specific conditions are given by using this formula: t q = t q1 tq t q1 (T j ) tq t q1 (dv D / dt ) tq t q1 tq / tq1 ( - ) Turn-off Time, Parameter Relationship ( -diT / dt ) 1.00 0.90 0.80 where: t q1 is turn-off time at standard conditions, 0.70 see section "Characteristics" tq t q1 tq t q1 tq t q1 0.60 (T j ) is factor to be taken from fig. 12 (dv D / dt ) is factor to be taken from fig. 13 ( -diT / dt ) is factor to be taken from fig. 14 0.50 0.40 25 50 75 100 125 T j ( C ) 2.00 tq / tq1 ( - ) tq / tq1 ( - ) Fig. 12 Normalised maximum turn-off time vs. junction temperature 1.80 1.30 1.20 1.60 1.10 1.40 1.00 1.20 0.90 1.00 0.80 0.80 0 200 400 600 800 1000 dv D /dt ( V/s ) Fig. 13 Normalised maximum turn-off time vs. rate of rise of off-state voltage 0 200 400 600 800 1000 - di T /dt ( A/s ) Fig. 14 Normalised maximum turn-off time vs. rate of fall of on-state current ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 8 of 11 5STF 09D1420 6000 VD 2500 I TM 0.9 V D iG (t), vT (t), iT (t) i T (t) W on ( J ) Turn-on Characteristics 0.5 0.4 di T /dt 0.3 0.5 I TM 0.2 0.1 I TM 0.1 V D i G (t) 0.1 v T (t) 0 0 10 t gd t t gt 30 td Fig. 15 Typical waveforms and definition of symbols at turn-on of a thyristor 0.0 0 200 400 600 800 1000 di T /dt ( A/s ) Fig. 16 Maximum turn-on energy per pulse vs. rate of rise on-state current, Tj = Tjmax ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 9 of 11 5STF 09D1420 VD Qrr ( C ) v T (t), iT (t) Turn-off Characteristics 10000 v T (t) I TM i T (t) 1000 - di T /dt dv D /dt I TM = 2000 A tq 1000 A 100 500 A 10 I rrM Q rr VR 10 -600 t -600 1000 100 1000 - di T /dt ( A/s ) Fig. 18 Max. recovered charge vs. rate of fall on-state current, trapezoid pulse, VR = 100 V, Tj = Tjmax W off ( J ) IrrM ( A ) Fig. 17 Typical waveforms and definition of symbols at turn-off of a thyristor, inductive switching without RC snubber 10 1.6 V R = 2/3 V DRM 1.2 100 500 V 0.8 I TM = 2000 A 1000 A 500 A 0.4 200 V 100 V 10 0.0 10 100 1000 - di T /dt ( A/s ) Fig. 19 Max. reverse recovery current vs. rate of fall on-state current, trapezoid pulse, VR = 100 V, Tj = Tjmax 0 200 400 600 800 1000 - di T /dt ( A/s ) Fig. 20 Maximum turn-off energy per pulse vs. rate of fall on-state current, trapezoid pulse, inductive switching without RC snubber, ITM = 2 000 A, Tj = Tjmax ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 10 of 11 5STF 09D1420 Notes: ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 11 of 11 5STF 09D1420 5STF 09D1420 Old part no. TR 907-850-14 Fast Thyristor Properties Amplifying gate High operational capability Optimized turn-off parameters Applications Power switching applications Key Parameters V DRM, V RRM = 1 400 I TAV = 847 I TSM = 13.0 V TO = 1.231 r T = 0.317 t q = 20 V A kA V m s Types VRRM, VDRM 5STF 09D1420..1425 5STF 09D1220..1225 1 400 V 1 200 V Conditions: Tj = -40 / 125 C, half sine waveform, f = 50 Hz, note 1 Mechanical Data Fm Mounting force m Weight DS Surface creepage distance 25 mm Da Air strike distance 14 mm 10 2 kN 0.26 kg Fig. 1 Case ABB s.r.o. Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic tel.: +420 261 306 250, http://www.abb.com/semiconductors TS - TR/254/07 Jul-10 1 of 11 5STF 09D1420 Maximum Ratings VRRM VDRM ITRMS Repetitive peak reverse and off-state voltage Maximum Limits Unit 1 400 1 200 V 1 330 A 847 A tp = 10 ms tp = 8.3 ms 13 000 13 900 A tp = 10 ms tp = 8.3 ms 845 000 800 000 A2s 800 A/s 1 000 V/s 5STF 09D1420..1425 5STF 09D1220..1225 Tj = -40 / 125 C, note 1 RMS on-state current Tc = 70 C, half sine waveform, f = 50 Hz ITAVm Average on-state current Tc = 70 C, half sine waveform, f = 50 Hz ITSM Peak non-repetitive surge half sine pulse, VR = 0 V I2t Limiting load integral half sine pulse, VR = 0 V (diT/dt)cr Critical rate of rise of on-state current IT = ITAVm, half sine waveform, f = 50 Hz, VD = 2/3 VDRM, tr = 0.3 s, IGT = 2 A (dvD/dt)cr Critical rate of rise of off-state voltage VD = 2/3 VDRM PGAVm Maximum average gate power losses 3 W IFGM Peak gate current 10 A VFGM Peak gate voltage 12 V VRGM Reverse peak gate voltage 10 V Tjmin - Tjmax Operating temperature range -40 / 125 C Tstgmin Tstgmax Storage temperature range -40 / 125 C Unless otherwise specified Tj = 125 C Note 1: De-rating factor of 0.13% VRRM or VDRM per C is applicable for Tj below 25 C ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 2 of 11 5STF 09D1420 Characteristics Value min. VTM typ. Maximum peak on-state voltage Unit max. 1.710 V ITM = 1 500 A VT0 Threshold voltage 1.231 V rT Slope resistance 0.317 m 70 mA 70 mA 2.0 s 20.0 s IT1 = 1 335 A, IT2 = 4 006 A IDM Peak off-state current VD = VDRM IRM Peak reverse current VR = VRRM tgd Delay time Tj = 25 C, VD = 0.4 VDRM, ITM = ITAVm, tr = 0.3 s, IGT = 2 A tq1 Turn-off time IT = 500 A, diT/dt = -50 A/s, VR = 100 V, VD = 2/3 VDRM, dvD/dt = 50 V/s group of tq 5STF 09D1420 5STF 09D1220 5STF 09D1425 5STF 09D1225 Qrr 25.0 Recovery charge 380 C 140 A the same conditions as at tq1 IrrM Reverse recovery current the same conditions as at tq1 IH Holding current Tj = 25 C Tj = 125 C 250 150 mA IL Latching current Tj = 25 C Tj = 125 C 1 500 1 000 mA VGT Gate trigger voltage Tj = - 40 C Tj = 25 C Tj = 125 C VD = 12V, IT = 4 A IGT Gate trigger current VD = 12V, IT = 4 A Tj = - 40 C Tj = 25 C Tj = 125 C V 0.25 4 3 2 mA 10 1000 500 300 Unless otherwise specified Tj = 125 C ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 3 of 11 5STF 09D1420 Thermal Parameters Thermal resistance junction to case Rthjc Value Unit 32.0 K/kW double side cooling Rthch anode side cooling 52.0 cathode side cooling 83.0 Thermal resistance case to heatsink 10.0 K/kW double side cooling single side cooling 20.0 Transient Thermal Impedance Analytical function for transient thermal impedance 5 R i (1 - exp( -t / i )) 2 3 4 5 i ( s ) 0.4857 0.2162 0.0762 0.0043 0.0006 Ri( K/kW ) 13.07 8.03 8.20 2.57 0.13 35 i =1 Conditions: Fm = 10 2 kN, Double side cooled Correction for periodic waveforms 180 sine: 1 add 2.3 K/kW 180 rectangular: add 3.1 K/kW 120 rectangular: add 5.2 K/kW 60 rectangular: add 8.7 K/kW Transient thermal impedance junction to case Zthjc ( K/kW ) Z thjc = i 30 25 20 15 10 5 0 0.001 0.01 0.1 1 10 Square wave pulse duration t d ( s ) Fig. 2 Dependence transient thermal impedance junction to case on square pulse ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 4 of 11 5STF 09D1420 IT ( A ) On-State Characteristics T j = 25 C 5000 125 C 4000 3000 2000 1000 0 0 1 2 3 V T ( V 4) Fig. 3 Maximum on-state characteristics Gate Trigger Characteristics VG ( V ) VG ( V ) 6 DC 5 -40 C 4 +25 C 14 12 V GTmax 10 50 s 8 1 ms 3 I GTmax 6 2 +125 C 4 V GTmin 1 10 ms 2 DC 0 0 0 I GTmin 0.2 0.4 0.6 Fig. 4 Gate trigger characteristics 0.8 1 IG ( A ) 0 2 4 6 8 10 12 IG ( A ) Fig. 5 Maximum peak gate power loss ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 5 of 11 5STF 09D1420 Surge Characteristics 1.2 25 1 20 0.8 14 ITSM ( kA ) i 2 dt i 2dt (106 A2s) ITSM ( kA ) 30 12 10 8 15 0.6 VR = 0 V 6 10 0.4 I TSM 4 V R 0.5 V DRM 5 0.2 2 0 1 10 t ( ms ) 0 100 Fig. 6 Surge on-state current vs. pulse length, half sine wave, single pulse, VR = 0 V, Tj = Tjmax 0 1 10 100 Number n of cycles at 50 Hz Fig. 7 Surge on-state current vs. number of pulses, half sine wave, Tj = Tjmax ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 6 of 11 5STF 09D1420 Power Loss and Maximum Case Temperature Characteristics 60 90 120 180 DC 1500 = 30 PT ( W ) PT ( W ) = 30 270 DC 1500 1000 1000 500 500 0 0 0 200 400 600 800 I TAV 0 1000 (A) Fig. 8 On-state power loss vs. average on-state current, sine waveform, f = 50 Hz, T = 1/f 130 200 400 600 800 1000 I TAV ( A ) Fig. 9 On-state power loss vs. average on-state current, square waveform, f = 50 Hz, T = 1/f 130 TC ( C ) TC ( C ) 60 90 120 180 120 120 110 110 100 100 90 90 80 80 DC 70 DC 270 70 = 30 60 90 = 30 120 180 60 60 90 120 180 800 1000 60 0 200 400 600 800 1000 0 200 400 600 I TAV ( A ) Fig. 10 Max. case temperature vs. aver. on-state current, sine waveform, f = 50 Hz, T = 1/f I TAV ( A ) Fig. 11 Max. case temperature vs. aver. on-state current, square waveform, f = 50 Hz, T = 1/f Note 2: Figures number 8 / 11 have been calculated without considering any turn-on and turn-off losses. They are valid for f = 50 or 60 Hz operation. ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 7 of 11 5STF 09D1420 Maximum values of turn-off time at application specific conditions are given by using this formula: t q = t q1 tq t q1 (T j ) tq t q1 (dv D / dt ) tq t q1 tq / tq1 ( - ) Turn-off Time, Parameter Relationship ( -diT / dt ) 1.00 0.90 0.80 where: t q1 is turn-off time at standard conditions, 0.70 see section "Characteristics" tq t q1 tq t q1 tq t q1 0.60 (T j ) is factor to be taken from fig. 12 (dv D / dt ) is factor to be taken from fig. 13 ( -diT / dt ) is factor to be taken from fig. 14 0.50 0.40 25 50 75 100 125 T j ( C ) 2.00 tq / tq1 ( - ) tq / tq1 ( - ) Fig. 12 Normalised maximum turn-off time vs. junction temperature 1.80 1.30 1.20 1.60 1.10 1.40 1.00 1.20 0.90 1.00 0.80 0.80 0 200 400 600 800 1000 dv D /dt ( V/s ) Fig. 13 Normalised maximum turn-off time vs. rate of rise of off-state voltage 0 200 400 600 800 1000 - di T /dt ( A/s ) Fig. 14 Normalised maximum turn-off time vs. rate of fall of on-state current ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 8 of 11 5STF 09D1420 6000 VD 2500 I TM 0.9 V D iG (t), vT (t), iT (t) i T (t) W on ( J ) Turn-on Characteristics 0.5 0.4 di T /dt 0.3 0.5 I TM 0.2 0.1 I TM 0.1 V D i G (t) 0.1 v T (t) 0 0 10 t gd t t gt 30 td Fig. 15 Typical waveforms and definition of symbols at turn-on of a thyristor 0.0 0 200 400 600 800 1000 di T /dt ( A/s ) Fig. 16 Maximum turn-on energy per pulse vs. rate of rise on-state current, Tj = Tjmax ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 9 of 11 5STF 09D1420 VD Qrr ( C ) v T (t), iT (t) Turn-off Characteristics 10000 v T (t) I TM i T (t) 1000 - di T /dt dv D /dt I TM = 2000 A tq 1000 A 100 500 A 10 I rrM Q rr VR 10 -600 t -600 1000 100 1000 - di T /dt ( A/s ) Fig. 18 Max. recovered charge vs. rate of fall on-state current, trapezoid pulse, VR = 100 V, Tj = Tjmax W off ( J ) IrrM ( A ) Fig. 17 Typical waveforms and definition of symbols at turn-off of a thyristor, inductive switching without RC snubber 10 1.6 V R = 2/3 V DRM 1.2 100 500 V 0.8 I TM = 2000 A 1000 A 500 A 0.4 200 V 100 V 10 0.0 10 100 1000 - di T /dt ( A/s ) Fig. 19 Max. reverse recovery current vs. rate of fall on-state current, trapezoid pulse, VR = 100 V, Tj = Tjmax 0 200 400 600 800 1000 - di T /dt ( A/s ) Fig. 20 Maximum turn-off energy per pulse vs. rate of fall on-state current, trapezoid pulse, inductive switching without RC snubber, ITM = 2 000 A, Tj = Tjmax ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 10 of 11 5STF 09D1420 Notes: ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic ABB s.r.o. reserves the right to change the data contained herein at any time without notice TS - TR/254/07 Jul-10 11 of 11