DirectFET® Power MOSFET
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature
Benefits
lImproved Gate, Avalanche and Dynamic dV/dt
Ruggedness
lFully Characterized Capacitance and Avalanche
SOA
lEnhanced body diode dV/dt and dI/dt Capability
l RoHS Compliant Containing no Lead, no Bromide
and no Halogen
Applications
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
DirectFET ISOMETRIC
MX
25 50 75 100 125 150
TC , Case Temperature (°C)
0
50
100
150
200
ID, Drain Current (A)
Limited By Package
DD
G
S
S
V
DSS
40V
R
DS(on)
typ.
1.1m
Ω
max. 1.4mΩ
I
D (Silicon Limited)
198A
c
I
D (Package Limited)
90A
46810 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
0.0
2.0
4.0
6.0
RDS(on), Drain-to -Source On Resistance (mΩ)
ID = 90A
TJ = 25°C
TJ = 125°C
StrongIRFET
IRF7946PbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 30, 2014
Form Quantity
IRF7946TRPbF DirectFET MX Tape and Reel 4800 IRF7946TRPbF
Complete Part NumberBase part number Package Type Standard Pack
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 30, 2014
IRF7946PbF
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
TC measured with thermocouple mounted to top (Drain) of part.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 1.1 1.4 mΩ
1.7 ––– mΩ
V
GS( th)
Gate Threshold Voltage 2.2 3.0 3.9 V
I
Drain-to-Source Leakage Current ––– ––– 1.0 μA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 0.67 ––– Ω
V
GS
= 20V
V
GS
= -20V
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 6.0V, I
D
= 72A
g
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1.0mA
d
V
GS
= 10V, I
D
= 90A
g
V
DS
= V
GS
, I
D
= 150μA
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
T
J
Operating Junction and
T
STG
Storage Temperature Range
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
E
AS (tested)
Single Pulse Avalanche Energy Tested Value
l
I
AR
Avalanche Current
d
A
E
AR
Repetitive Avalanche Energy
d
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JA
Junction-to-Ambient
n
––– 55
R
θ
JA
Junction-to-Ambient
p
12.5 –––
R
θ
JA
Junction-to-Ambient
o
20 ––– °C/W
R
θ
JC
Junction-to-Case
qk
––– 1.3
R
θ
JA-PCB
Junction-to-PCB Mounted 1.0 –––
A
°C
85
See Fig. 14, 15, 22a, 22b
± 20
0.77
96
Max.
198
c
125
c
793
163
-55 to + 150
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 30, 2014
IRF7946PbF
S
D
G
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Package limit is 90A.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.021mH
RG = 50Ω, IAS = 90A, VGS =10V.
ISD ≤ 90A, di/dt ≤ 1135A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
This value determined from sample failure population,
starting TJ = 25°C, L= 0.021mH, RG = 50Ω, IAS = 90A, VGS =10V.
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 91 ––– ––– S
Q
g
Total Gate Charge ––– 141 212 nC
Qgs Gate-to-Source Charge ––– 36 –––
Qgd Gate-to-Drain ("Miller") Charge ––– 44 –––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
) ––– 97 –––
t
d(on)
Turn-On Delay Time ––– 20 ––– ns
t
r
Rise Time ––– 49 –––
td(off) Turn-Off Delay Time ––– 54 –––
tfFall Time ––– 41 –––
Ciss Input Capacitance ––– 6852 ––– pF
C
oss
Output Capacitance ––– 1046 –––
C
rss
Reverse Transfer Capacitance ––– 735 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1307 –––
Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 1465 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 96
c
A
(Body Diode)
I
SM
Pulsed Source Current ––– ––– 793 A
(Body Diode)
d
VSD Diode Forward Voltage ––– 0.75 1.2 V
dv/dt Peak Diode Recovery
f
––– 1.6 ––– V/ns
t
rr
Reverse Recovery Time ––– 49 ––– ns T
J
= 25°C V
R
= 34V,
––– 50 ––– T
J
= 125°C I
F
= 90A
Qrr Reverse Recovery Charge ––– 74 ––– nC TJ = 25°C di/dt = 100A/μs
g
––– 73 ––– TJ = 125°C
I
RRM
Reverse Recovery Current ––– 2.6 ––– A T
J
= 25°C
VGS = 0V, VDS = 0V to 32V
i
VGS = 0V, VDS = 0V to 32V
h
Conditions
VGS = 10V
g
VGS = 0V
V
DS
= 25V
ƒ = 1.0 MHz
I
D
= 90A, V
DS
=0V, V
GS
= 10V
Conditions
V
DS
= 10V, I
D
= 90A
VDS =20V
I
D
= 90A
TJ = 25°C, IS = 90A, VGS = 0V
g
integral reverse
p-n junction diode.
MOSFET symbol
showing the
T
J
= 175°C, I
S
= 90A, V
DS
= 40V
I
D
= 30A
RG = 2.7Ω
VGS = 10V
g
V
DD
= 20V
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 30, 2014
IRF7946PbF
Fig 3. Typical Output Characteristics
Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature
Fig 4. Typical Output Characteristics
Fig 8. Typical Gate Charge vs. Gate-to-Source VoltageFig 7. Typical Capacitance vs. Drain-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
≤60μs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
≤60μs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
2345678
VGS, Gate-to-Source Voltage (V)
1.0
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
VDS = 10V
≤60μs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.80.8
1.01.0
1.21.2
1.41.4
1.61.6
1.8
0.6
0.8
1.0
1.2
1.4
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 90A
VGS = 10V
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 20 40 60 80 100 120 140 160 180
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 32V
VDS= 20V
ID= 90A
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 30, 2014
IRF7946PbF
Fig 10. Maximum Safe Operating Area
Fig 11. Drain-to-Source Breakdown Voltage
Fig 9. Typical Source-Drain Diode
Forward Voltage
Fig 12. Typical COSS Stored Energy
Fig 13. Typical On-Resistance vs. Drain Current
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
1.0
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
1msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
DC
Limited by
Package
-60 -40 -20 020 40 60 80 100 120140 160
TJ , Temperature ( °C )
40
41
42
43
44
45
46
47
48
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 1.0mA
0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Energy (μJ)
VDS= 0V to 32V
0200 400 600 800 1000
ID, Drain Current (A)
0.0
2.0
4.0
6.0
8.0
10.0
RDS(on), Drain-to -Source On Resistance (mΩ)
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS =10V
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 30, 2014
IRF7946PbF
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 125°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 125°C and
Tstart =25°C (Single Pulse)
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
10
20
30
40
50
60
70
80
90
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 90A
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 30, 2014
IRF7946PbF
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
Fig. 20 - Typical Stored Charge vs. dif/dtFig. 19 - Typical Recovery Current vs. dif/dt
Fig. 21 - Typical Stored Charge vs. dif/dt
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS(th), Gate threshold Voltage (V)
ID = 150μA
ID = 1.0mA
ID = 1.0A
0200 400 600 800 1000
diF /dt (A/μs)
0
2
4
6
8
10
12
14
16
IRRM (A)
IF = 54A
VR = 34V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/μs)
0
2
4
6
8
10
12
14
16
IRRM (A)
IF = 90A
VR = 34V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/μs)
50
100
150
200
250
300
350
QRR (nC)
IF = 54A
VR = 34V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/μs)
50
100
150
200
250
300
350
400
QRR (nC)
IF = 90A
VR = 34V
TJ = 25°C
TJ = 125°C
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 30, 2014
IRF7946PbF
Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Inductor Current
D.U.T. VDS
ID
IG
3mA
VGS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
VGS
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 30, 2014
IRF7946PbF
DirectFET® Board Footprint, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G
S
G=GATE
D=DRAIN
S=SOURCE
S
D
DD
D
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 30, 2014
IRF7946PbF
DirectFET® Part Marking
DirectFET® Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and substrate designs.
GATE MARKING
PART NUMBER
LOGO
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
CODE
A
B
C
D
E
F
G
H
J
K
L
M
P
0.017
0.028
0.007
0.040
0.095
0.156
0.028
0.018
0.028
MAX
0.250
0.38
0.59
0.08
0.88
2.28
3.85
0.68
0.35
0.68
MIN
6.25
4.80
0.42
0.70
0.17
1.02
2.42
3.95
0.72
0.45
0.72
MAX
6.35
5.05
0.015
0.023
0.003
0.090
0.035
0.152
0.027
0.027
0.014
MIN
0.189
0.246
METRIC IMPERIAL
DIMENSIONS
1.38 1.42
0.80 0.84
0.0560.054
0.0330.031
R 0.03 0.08 0.001 0.003
Dimensions are shown in
millimeters (inches)
0.199
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 30, 2014
IRF7946PbF
DirectFET® Tape & Reel Dimension (Showing component orientation).
NOTE: CONTROLLING
DIMENSIONS IN MM CODE
A
B
C
D
E
F
G
H
IMPERIAL
MIN
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
1.60
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
METRIC
DI MENSI ONS
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N. C
0.063
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
NOTE: Controlling dimensions in mm Std reel.
quantity is 4800 parts. (ordered as IRF7946PBF).
REEL DIMENSIONS
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
IMPERIAL
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
STANDARD OPTION (QTY 4800)
CODE
A
B
C
D
E
F
G
H
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
METRIC
12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 30, 2014
IRF7946PbF
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/
 Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
MS L 1
(per JEDEC J-STD-020D
†††
)
RoHS compliant Yes
(per JEDEC JESD47F
†††
guidelines)
Qualification information
†
Consumer
††
Qualification level
Moisture Sensitivity Level DFET 1.5
Revision History
Date Comment
•
Updated data sheet based on corporate template.
•
Updated Qual level from "MSL3" to "MSL1" on page12.
•
Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264).
•
Remove IRF7946TR1PBF quantity= 1000 from ordering table on page1.
•
Remove continuous drain current package limt=90A from Absolute Maximum table-on page2
5/7/2014
5/30/2014