A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 10 mA 55 V
BVCER IC = 20 mA RBE = 10 Ω 55 V
BVEBO IE = 1 mA 3.5 V
ICES VE = 28 V 5 mA
hFE VCE = 5.0 V IC = 1.0 A 15 150 ---
PG
η
ηη
ηC VCC = 28 V POUT = 30 W f = 1.2 to 1.4 GHz 7.0
45
dB
%
NPN SILICON RF POWER TRANSISTOR
ALR030
DESCRIPTION:
The ASI ALR030 is Designed for
1200 – 1400 MHz, L-Band Applications.
FEATURES:
• Internal Input/Output Matching Network
• PG = 7.0 dB at 30 W/ 1400 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 2.75 A
VCC 32 V
PDISS 63 W @ TC = 25 °C
TJ -65 °C to +250 °C
TSTG -65 °C to +200 °C
θ
θθ
θJC 2.4 °C/W
PACKAGE STYLE .310 2L FLG
ORDER CODE: ASI10512
MINIMUM
inc h e s / m m
.100 / 2.54
.286 / 7.26
.306 / 7.77
B
C
D
E
F
G
A
MAXIMUM
.318 / 8.08
.306 / 7.77
inc h e s / m m
H
DIM
K
L
I
J.552 / 14.02
.300 / 7.62
.572 / 14.53
.320 / 8.13
P
N
M
.118 / 3.00
.003 / 0.08
.131 / 3.33
.006 / 0.15
.790 / 20.07 .810 / 20.57
.072 / 1.83
.148 / 3.76
.120 / 3.05
R
.052 / 1.32
.230 / 5.84
.095 / 2.41 .105 / 2.67
.050 / 1.27
.400 / 10.16
.119 / 3.02
.110 / 2.79 .130 / 3.30
I
G
C
D F
Ø E
N
H
4x .062 x 45°
R
P
M L
J
K
2 x B
.040 x 45°
A
