04/2006
AWL6950
2.4/5 GHz 802.1 1a/b/g
WLAN Power Amplifier
Data Sheet - Rev 2.2
M21 Package
16 Pin 4 mm x 4 mm x 1.3 mm
Surface Mount Module
FEATURES
3.6 % EVM @ POUT = +19 dBm with IEEE 802.11a
64 QAM OFDM at 54 Mbps
2.7 % EVM @ POUT = +20 dBm with IEEE 802.11g
64 QAM OFDM at 54 Mbps
-35 dBr ACPR 1st Sidelobe, +22 dBm, with
802.11b CCK/DSSS Root Cosine Filtering, 1 Mbps
-55 dBr ACPR 2nd Sidelobe, +22 dBm, with
802.11b CCK/DSSS Root Cosine Filtering, 1 Mbps
32 dB of Linear Power Gain at 2.4 GHz
32 dB of Linear Power Gain at 5 GHz
Single +3.3 V Supply
Dual Temperature-Compensated Linear Power
Detectors
50 - Matched RF Ports
Lead-free and RoHS Compliant
1 kV ESD Rating (HBM)
4 mm x 4 mm x 1.3 mm Surface Mount Module
APPLICATIONS
802.11a/b/g/n WLAN
Figure 1: Block Diagram and Pinout
PRODUCT DESCRIPTION
The ANADIGICS AWL6950 dual band power
amplifier is a high performance InGaP HBT power
amplifier module designed for transmit
applications in the 2.4-2.5 GHz and 4.9-5.9 GHz
bands. Matched to 50 at all RF inputs and outputs,
the part requires no additional RF matching
components off-chip, making the AWL6950 the
world’s simplest dual band PA module
implementation available. The PA exhibits
unparalleled linearity and efficiency for IEEE
802.11g, 802.11b, and 802.11a WLAN systems
under the toughest signal configurations within
these standards.
The power detectors are temperature compensated
on chip, enabling separate single-ended output
voltages for each band with excellent accuracy over
a wide range of operating temperatures. The PA is
biased by a single +3.3 V supply and consumes
ultra-low current in the OFF mode.
Bias Control
VCCVPC
2.4 GHz
RFIN 2.4 GH
z
RFOUT
Matching
Network
GND 2.4 GHz
Power Detector
Bias Control
VCCVPC
5 GHz
RFIN 5 GHz
RFOUT
GND 5 GHz
Power Detector
Matching
Network
Matching
Network Matching
Network
The AWL6950 is manufactured using advanced
InGaP HBT technology that offers state-of-the-art
reliability, temperature stability, and ruggedness.
AWL6950
2Data Sheet - Rev 2.2
04/2006
AWL6950
T able 1: Pin Description
NIP EMAN NOITPIRCSED
1DNGdnuorG
2FR
NI
G2
.dnuorgothtapCDaedivorpnipsihtnostiucricnoitcetorpDSE.tupnIFRzHG2 05otdehctamyllanretnisiFR.nipsihto
tegatlovCDgniylppadiovA CAdna tnecajdagnisuediugevawranalpocsasecartFRetuoR.egatstupniehtotdelpuoc .sni
pdnuorg
3FR
NI
G5 05otdehctamyllanretniegatstupnI.tupnIFRzHG5 ediugevawranalpocsaetuoR. APehtedisnidedulcnitnemelegnihctamevitcudnitnuhsA.snipdnuorgtnecajdagnisu .nipsihtotegatlovCDgniylppadiovA.nipsihttadnuorgothtapCDas
edivorp
4DNGdnuorG
5AP
NO
G5 ,yllanimoN.APehtfolortnocffo/norofsiesudednemmocerehT.lortnoCffO/nOzHG5 otreifilpmatesotdesuebdluohsV3.3+;ffoyletelpmocreifilpmanrutlliwdeilppaV0 .ytilibapactuptuomumixam
6DNGdnuorG
7V
CC
G5.APzHG5ehtfosrotsisnartrewoprofsaiB.egatloVylppuSzHG5
8TED
TUO
G5 rewollofrettimenA.tuptuorotcetedrewopdelpuocCD.tuptuOrotceteDrewoPzHG5 .nipsihtroftuptuoehtseilppusT
JB
9DNGdnuorG
01FR
TUO
G5
05otdehctamyllanretniegatstuptuO.tuptuOFRzHG5 ranalpocsaetuoR. dedulcnitnemelegnihctamevitcudnitnuhs
A.snipdnuorgtnecajdagnisuediugevaw otegatlovCDgniylppadiovA.nipsihttadnuorgothtapCDasedivorpAPehtedisn
i.nipsiht
11FR
TUO
G2
.dnuorgothtapCDaedivorpnipsihtnostiucricnoitcetorpDSE.tuptuOFRzHG2 05otdehctamyllanretnisiFR.nipsiht
otegatlovCDgniylppadiovA CAdna tnecajdagnisuediugevawranalpocsasecartFRetuoR.egatstupniehtotdelpuoc .sn
ipdnuorg
21DNGdnuorG
31TED
TUO
G2 rewollofrettimenA.tuptuorotcetedrewopdelpuocCD.tuptuOrotceteDrewoPzHG2 .nipsihtroftuptuoehtseilppusT
JB
41V
CC
G2.APzHG2ehtfosrotsisnartrewoprofsaiB.ylppuSrewoPzHG2
51DNGdnuorG
61AP
NO
G2 ,yllanimoN.APehtfolortnocffo/norofsiesudednemmocerehT.lortnoCffO/nOzHG2 otreifilpmatesotdesuebdluohsV3.3+;ffoyletelpmocreifilpmanrutlliwdeilppaV0 .ytilibapactuptuomumixam
Data Sheet - Rev 2.2
04/2006
AWL6950
3
ELECTRICAL CHARACTERISTICS
T able 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not
implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely
affect reliability.
T able 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
RETEMARAP NIM XAM TINU STNEMMOC
V(ylppuSrewoPCD
CC
,G2V
CC
)G5-5.4+V
AP(egatloVlortnoCrewoP
NO
AP,G2
NO
)G5- 5.4+V deilppalangisFRoN
noitpmusnoCtnerruCCD-007AmyletarapesderewopAPrehtiE
FR(leveLtupnIFR
NI
FR,G2
NI
)G5-5-mBd
erutarepmeTtneibmAgnitarepO04-58+C°
erutarepmeTegarotS55-051+C°
ecnareloTDSE0001-V esreverdnadrawrof,snipll
AledoMydoBnamuH.egatlov )MBH(
RETEMARAP NIM PYT XAM TINU STNEMMOC
)f(ycneuqerFgnitarepO 0042 0094 -
-0052 0095 zHM g/b11.208 a11.208
V(egatloVylppuSrewoPCD
CC
V,G2
CC
)G50.3+3.3+6.3+V deilppaFRhtiw
AP(egatloVlortnoCrewoP
NO
AP,G2
NO
)G5 0.2+03.3+ -6.3+ 8.0+ V"NO"AP "NWODTUHS"AP
T(erutarepmeTesaC
C
)04--58+C°
4Data Sheet - Rev 2.2
04/2006
AWL6950
T able 4: Electrical Specifications - 2.4 GHz Continuous W ave
(TC = +25 °C, VCC 2G = +3.3 V, PAON 2G = +3.3 V)
RETEMARAP NIM PYT XAM TINU STNEMMOC
Bd1P5.4262- mBd
tnerruCnwodtuhS-0357µAAP
NO
V0=G2
tnerruCtnecseiuQ-5759AmAP
NO
G2 V,V0.2+
CC
ffo=FR,V3.3+=
ssoLnruteRtupnI-31-8-Bd
ssoLnruteRtuptuO-9-4-Bd
noitcejeRdnaBfotuO zHG1 zHG57.1 zHG2.3 zHG7.4
02
0
5
83
-
-
-
-
-
-
-
-
Bd
noitalosIesreveR04--Bd
)suoirupS(ytilibatS--06-cBdP,RWSV1:6
TUO
5-,mBd32+=
O
C
T
NO
emiTgnitteS --1
µSnihtiwseltteS ±Bd5.0
T
FFO
emiTgnitteS --1
µS
AP
NO
tupnIniPG2 ecnadepmI -2.6-kAPotdeilppaV3.3+htiwderusaeM
NO
nipG2
Data Sheet - Rev 2.2
04/2006
AWL6950
5
T able 5: Electrical Specifications - 5 GHz Continuous W ave
(TC = +25 °C, VCC 5G = +3.3 V , PAON 5G = +3.3 V)
RETEMARAP NIM PYT XAM TINU STNEMMOC
Bd1P325.42-mBd
tnerruCnwodtuhS-2338µAAP
NO
V0=G5
tnerruCtnecseiuQ28021061AmAP
NO
G5 V,V0.2+
CC
ffo=FR,V3.3+=
ssoLnruteRtupnI-02-01-Bd
ssoLnruteRtuptuO-81-01-Bd
noitcejeRdnaBfotuO zHG5.1 zHG5.3 zHG4 zHG5.6 zHG9
53 5
.215
5
03
-
-
-
-
-
-
-
-
-
-
Bd
noitalosIesreveR04--Bd
)suoirupS(ytilibatS--06-cBdP,RWSV1:6
TUO
5-;mBd22+=
O
C
T
NO
emiTgnitteS --1
µSnihtiwseltteS ±Bd5.0
T
FFO
emiTgnitteS --1
µS
AP
NO
tupnIniPG5 ecnadepmI -2.6-kAPotdeilppaV3.3+htiwderusaeM
NO
G5
nip
6Data Sheet - Rev 2.2
04/2006
AWL6950
Notes:
(1) EVM includes system noise floor of 1% (-40 dB).
(2) Spectrum analyzer settings: RBW = 1 MHz; Span = 100 MHz.
T able 6: Electrical Specifications - IEEE 802.1 1g
(TC = +25 °C, VCC 2G = +3.3 V, PAON 2G = +3.3 V , 64 QAM OFDM 54 Mbp s)
RETEMARAP NIM PYT XAM TINU STNEMMOC
ycneuqerFgnitarepO0042-0052zHM
niaGrewoP922353Bd
elppiRniaG-
±2.0 ±5.0 BddnabzHM001ynassorcA
)MVE(edutingaMro
tceVrorrE -
-7.2 4.13- 5.4 72- %
Bd etaratadspbM45g11.208
P
TUO
mBd02+=G2
)1(
noitpmusnoCtnerruC-581512AmP
TUO
mBd02+=G2
scinomraH of2 of3 -
-35- 45- 93- 84- cBdP
TUO
mBd32+=G2
)2(
egatloVrotceteDrewoP57852015511VmP
TUO
mBd02+=G2
egnaRegatloVrotceteDrewoP001- 5511VmP<5-
TUO
mBd02+<G2
egnaRBdrotceteDrewoP52-- BdP<5-
TUO
mBd02+<G2
rewoProtceteDmuminiM--5-mBd
rewoProtceteDmumixaM02-- mBd
noituloseRrotceteD01-- Bd/Vm
ycneuqerFrevOecnairaVro
tceteD-5.09.2BdzHG05.2-04.2
daoLtuptuOrotceteDrewoP ecnadepmI 2--k
Data Sheet - Rev 2.2
04/2006
AWL6950
7
T able 7: Electrical Specifications - IEEE 802.1 1b
(TC = +25 °C, VCC 2G = +3.3 V , PAON 2G = +3.3 V , CCK/DSSS, 1 Mbp s, Gaussian Baseband Filtering)
RETEMARAP NIM PYT XAM TINU STNEMMOC
ycneuqerFgnitarepO0042-0052zHM
niaGrewoP922353Bd
elppiRniaG-
±2.0 ±5.0 BddnabzHM001ynassorcA
)RPCA(rewoPlenna
hCtnecajdA (ebolediSts1 ±)tesffOzHM11 -53-33-cBd naissuaGspbM1 ;gniretliFdnabesaB
P
TUO
mBd02+=G2
)RPCA(rewoPlennahCtnecajdA (ebolediSdn2 ±)tesffOzHM22 -55-35-cBd naissuaGspbM1 ;gniretliFdnabesaB
P
TUO
mBd02+=G2
noitpmusnoCtnerruC-091522AmP
TUO
mBd02+=G2
scinomraH of2 of3 -
-06- 35- 05- 34- cBdP
TUO
mBd32+=G2
)1(
egatloVrotceteDrewoP52957010521VmP
TUO
mBd02+=G2
egnaRegatloVrotceteDrewoP001- 0521VmP<5-
TUO
mBd02+<G2
egnaRBdrotceteDrewoP52-- VmP<5-
TUO
mBd02+<G2
rewoProtceteDmuminiM--5-mBd
rewoProtceteDmumixaM02-- mBd
noituloseRrotceteD01-- Bd/Vm
ycneuqerFrevOecnairaVro
tceteD-5.06.2Bd
daoLtuptuOrotceteDrewoP ecnadepmI 2--k
Note:
(1) Spectrum analyzer settings: RBW = 1 MHz; Span = 100 MHz.
8Data Sheet - Rev 2.2
04/2006
AWL6950
T able 8: Electrical Specifications - IEEE 802.1 1a
(TC = +25 °C, VCC 5G = +3.3 V, PAON 5G = +3.3 V , 64 QAM OFDM 54 Mbp s)
Notes:
(1) EVM includes system noise floor of 1% (-40dB).
(2) Spectrum analyzer settings: RBW = 1 MHz; Span = 100 MHz.
RETEMARAP NIM PYT XAM TINU STNEMMOC
ycneuqerFgnitarepO0094-0095zHM
niaGrewoP
72030382
03 5.33 5.33 13
4383 5.63 5.53
Bd
zHG9.4 zHG52.5 zHG55.5 zHG5
8.5
elppiRniaG-
±5.0 ±0.2 BddnabzHM001ynassorcA
)MVE(edutingaMrotceVrorrE -
-6.3 92- 5.4 72- %
Bd P
TUO
zHG58.5-9.4,mBd91+=G5 etaratadspbM45a11.208
)1(
noitpmusnoCtnerruC-512052AmP
TUO
mBd91+=G5
scinomraH of2 of3 -
-04- 05- 43- 34- cBdP
TUO
mBd02+=G5
)2(
egatloVrotceteDrewoP01907015221VmP
TUO
mBd91+=G5
egnaRegatloVrotceteDrewoP001- 5221VmP<5-
TUO
mBd02+<G5
egnaRBdrotceteDrewoP52-- BdP<5-
TUO
mBd02+<G5
rotceteDrewoPmuminiM--5-mBd
rotceteDrewoPmumixaM02-- mBd
noituloseRrotceteD01-- Bd/Vm
ycneuqerFrevOecnairaVrotceteD-1.17.4BdzHG58.5-09.4
daoLtuptuOrotceteDrewoP ecnadepmI 2--k
Data Sheet - Rev 2.2
04/2006
AWL6950
9
Figure 2: Gain and ICC vs. Output Power Across
Frequency (VCC = +3.3 V, TC = +25oC)
802.1 1g 54 Mbps OFDM
Figure 5: EVM vs. Output Power Across
Frequency (VCC = +3.3 V, TC = 25oC)
802.1 1g 54 Mbps OFDM
Figure 3: Gain and ICC vs. Output Power Across
T emp (Frequency = 2.45 GHz, VCC = +3.3 V)
802.1 1g 54 Mbps OFDM
Figure 6: EVM vs. Output Power Across T emp
(Frequency = 2.45 GHz, VCC = +3.3 V)
802.1 1g 54 Mbps OFDM
802.11g PERFORMANCE DATA
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
320
340
360
Current (mA)
Gain 2.40 GHz
Gain 2.45 GHz
Gain 2.50 GHz
Current 2.40 GHz
Current 2.45 GHz
Current 2.50 GHz
Gain
Current
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
320
340
360
Current (mA)
Gain 0C
Gain +25C
Gain +50C
Gain +85C
Current 0C
Current +25C
Current +50C
Current +85C
Current
Gain
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
320
340
360
Current (mA)
Gain 3.0V
Gain 3.3V
Gain 3.6V
Icc 3.0V
Icc 3.3V
Icc 3.6V
Gain
Current
0
1
2
3
4
5
6
7
8
9
10
11
12
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
EVM (%)
EVM 0C
EVM +25C
EVM +50C
EVM +85C
0
1
2
3
4
5
6
7
8
9
10
11
12
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
EVM (%)
EVM 3.0V
EVM 3.3V
EVM 3.6V
Figure 4: Gain and ICC vs. Output Power Across
Power Supply V oltage (Freq = 2.45 GHz, TC = 25oC)
802.1 1g 54 Mbps OFDM
Figure 7: EVM vs. Output Power Across Power
Supply V oltage (Freq = 2.45 GHz, TC = 25oC)
802.1 1g 54 Mbps OFDM
0
1
2
3
4
5
6
7
8
9
10
11
12
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
EVM (%)
EVM 2.40 GHz
EVM 2.45 GHz
EVM 2.50 GHz
10 Data Sheet - Rev 2.2
04/2006
AWL6950
802.11g PERFORMANCE DATA
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0 1 2 3 4 5 6 7 8 9 1011121314151617181920212223
Output Power (dBm)
Detector Voltage (V)
Det. Volt. 2.40GHz
Det. Volt. 2.45GHz
Det. Volt. 2.50GHz
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
01234567891011121314151617181920212223
Output Power (dBm)
Detector Voltage (V)
Det. Volt. 0C
Det. Volt. 25C
Det. Volt. 50C
Det. Volt. 85C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Detector Voltage (V)
Det. Volt. 3.0V
Det. Volt. 3.3V
Det. Volt. 3.6V
Figure 8: Detector V oltage vs. Output Power
Across Frequency (TC = 25oC, VCC = +3.3 V)
802.1 1g 54 Mbps OFDM
Figure 10: Detector V olt age vs. Output Power
Across Power Supply V olt age (Freq = 2.45 GHz,
TC = 25oC) 802.11g 54 Mbps OFDM
Figure 9: Detector Voltage vs. Output Power Across
Temperature (Freq = 2.45 GHz, VCC = +3.3 V)
802.1 1g 54 Mbp s OFDM
Data Sheet - Rev 2.2
04/2006
AWL6950
11
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
320
340
360
Current (mA)
Gain 2.40 GHz
Gain 2.45 GHz
Gain 2.50 GHz
Current 2.40 GHz
Current 2.45 GHz
Current 2.50 GHz Current
Gain
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
320
340
360
Current (mA)
Gain 0C
Gain +25C
Gain +50C
Gain +85C
Current 0C
Current +25C
Current +50C
Current +85C
Gain
Current
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
320
340
360
Current (mA)
Gain 3.0V
Gain 3.3V
Gain 3.6V
Icc 3.0V
Icc 3.3V
Icc 3.6V
Gain
Curren
-62
-60
-58
-56
-54
-52
-50
-48
-46
-44
-42
-40
-38
-36
-34
-32
-30
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
ACPR Sidelobe (dBr)
1st Sidelobe 2.40GHz
1st Sidelobe 2.45GHz
1st Sidelobe 2.50GHz
2nd Sidelobe 2.40GHz
2nd Sidelobe 2.45GHz
2nd Sidelobe 2.50GHz
-62
-60
-58
-56
-54
-52
-50
-48
-46
-44
-42
-40
-38
-36
-34
-32
-30
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
ACPR Sidelobe (dBr)
1st Sidelobe 0C
1st Sidelobe 25C
1st Sidelobe 50C
1st Sidelobe 85C
2nd Sidelobe 0C
2nd Sidelobe 25C
2nd Sidelobe 50C
2nd Sidelobe 85C
-62
-60
-58
-56
-54
-52
-50
-48
-46
-44
-42
-40
-38
-36
-34
-32
-30
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
ACPR Sidelobe (dBr)
1st Sidelobe 3.00V
1st Sidelobe 3.30V
1st Sidelobe 3.60V
2nd Sidelobe 3.00V
2nd Sidelobe 3.30V
2nd Sidelobe 3.60V
Figure 11: Gain and ICC vs. Output Power Across
Frequency (VCC = +3.3 V, TC = +25oC)
802.1 1b Gaussian Filtering (BT = 0.5), 1 Mbps
Figure 14: ACPR vs. Output Power Across
Frequency (VCC = +3.3 V, TC = 25oC)
802.1 1b Gaussian Filtering (BT = 0.5), 1 Mbps
Figure 12: Gain and ICC vs. Output Power Across
Temp (Freq = 2.45 GHz, VCC = +3.3 V)
802.1 1b Gaussian Filtering (BT = 0.5), 1 Mbps
Figure 15: ACPR vs. Output Power Across T emp
(Freq = 2.45 GHz, VCC = +3.3 V)
802.1 1b Gaussian Filtering (BT = 0.5), 1 Mbps
Figure 13: Gain and ICC vs. Output Power Across
Power Supply V oltage (Freq = 2.45 GHz,
TC = 25oC) 802.1 1b Gaussian Filtering
(BT = 0.5), 1 Mbps
Figure 16: ACPR vs. Output Power Across Power
Supply V oltage (Freq = 2.45 GHz, TC = 25oC)
802.1 1b Gaussian Filtering (BT = 0.5), 1 Mbps
802.11b PERFORMANCE DATA
12 Data Sheet - Rev 2.2
04/2006
AWL6950
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Detector Voltage (V)
Det. Volt. 2.40GHz
Det. Volt. 2.45GHz
Det. Volt. 2.50GHz
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
01234567891011121314151617181920212223
Output Power (dBm)
Detector Voltage (V)
Det. Volt. 0C
Det. Volt. 25C
Det. Volt. 50C
Det. Volt. 85C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Detector Voltage (V)
Det. Volt. 3.0V
Det. Volt. 3.3V
Det. Volt. 3.6V
Figure 17: Detector V oltage vs. Output Power
Across Frequency (TC = 25oC, VCC = +3.3 V)
802.1 1b Gaussian Filtering (BT = 0.5), 1 Mbps
Figure 19: Detector V olt age vs. Output Power
Across Power Supply V olt age (Freq = 2.45 GHz,
TC = 25oC) 802.11b Gaussian Filtering
(BT = 0.5), 1 Mbps
Figure 18: Detector V oltage vs. Output Power
Across T emp (Freq = 2.45 GHz, VCC = +3.3 V)
802.1 1b Gaussian Filtering (BT = 0.5), 1 Mbps
Data Sheet - Rev 2.2
04/2006
AWL6950
13
802.11a PERFORMANCE DATA
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
120
140
160
180
200
220
240
260
280
300
320
340
360
380
400
420
Current (mA)
Gain 4.90 GHz
Gain 5.25 GHz
Gain 5.55 GHz
Gain 5.85 GHz
Icc 4.90 GHz
Icc 5.25 GHz
Icc 5.55 GHz
Icc 5.85 GHz
Current
Gain
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
120
140
160
180
200
220
240
260
280
300
320
340
360
380
400
420
Current (mA)
Gain 0C
Gain +25C
Gain +50C
Gain +85C
Current 0C
Current +25C
Current +50C
Current +85C
Current
Gain
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
Gain (dB)
80
100
120
140
160
180
200
220
240
260
280
300
320
340
360
380
Current (mA)
Gain 3.0V
Gain 3.3V
Gain 3.6V
Icc 3.0V
Icc 3.3V
Icc 3.6V
Current
Gain
0
1
2
3
4
5
6
7
8
9
10
11
12
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
EVM (%)
EVM 4.90 GHz
EVM 5.25 GHz
EVM 5.55 GHz
EVM 5.85 GHz
0
1
2
3
4
5
6
7
8
9
10
11
12
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
EVM (%)
EVM 0C
EVM +25C
EVM +50C
EVM +85C
0
1
2
3
4
5
6
7
8
9
10
11
12
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Output Power (dBm)
EVM (%)
EVM 3.0V
EVM 3.3V
EVM 3.6V
Figure 20: Gain and ICC vs. Output Power Across
Frequency (VCC = +3.3 V, TC = +25oC)
802.1 1a 54 Mbp s OFDM
Figure 23: EVM vs. Output Power Across
Frequency (VCC = +3.3 V, TC = 25oC)
802.1 1a 54 Mbp s OFDM
Figure 21: Gain and ICC vs. Output Power Across
Temp (Freq = 5.25 GHz, VCC = +3.3 V)
802.1 1a 54 Mbp s OFDM
Figure 24: EVM vs. Output Power Across T emp
(Freq = 5.25 GHz, VCC = +3.3 V)
802.1 1a 54 Mbp s OFDM
Figure 22: Gain and ICC vs. Output Power Across
Power Supply V oltage (Freq = 5.25 GHz, TC = 25oC)
802.1 1a 54 Mbps OFDM
Figure 25: EVM vs. Output Power Across Power
Supply V oltage (Freq = 5.25 GHz, TC = 25oC)
802.1 1a 54 Mbp s OFDM
14 Data Sheet - Rev 2.2
04/2006
AWL6950
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
01234567891011121314151617181920212223
Output Power (dBm)
Detector Voltage (V)
Det. Volt. 4.90GHz
Det. Volt. 5.25GHz
Det. Volt. 5.55GHz
Det. Volt. 5.85GHz
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
01234567891011121314151617181920212223
Output Power (dBm)
Detector Voltage ( V)
Det. Volt. 0C
Det. Volt. 25C
Det. Volt. 50C
Det. Volt. 85C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
01234567891011121314151617181920212223
Output Power (dBm)
Detector Voltage ( V)
Det. Volt. 3.0V
Det. Volt. 3.3V
Det. Volt. 3.6V
Figure 26: Detector V oltage vs. Output Power
Across Frequency (TC = 25oC, VCC = +3.3 V)
802.1 1a 54 Mbps OFDM
Figure 28: Detector V olt age vs. Output Power
Across Power Supply V olt age (Freq = 5.25 GHz,
TC = 25oC) 802.1 1a 54 Mbp s OFDM
Figure 27: Detector Voltage vs. Output Power Across
Temperature (Freq = 5.25 GHz, VCC = +3.3 V)
802.1 1a 54 Mbps OFDM
Data Sheet - Rev 2.2
04/2006
AWL6950
15
Figure 29: 2.4 GHz Return Losses Across
Frequency (VCC = +3.3 V, TC = 25oC)
S-P ARAMETER PERFORMANCE DATA
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Frequency (GHz)
Return Loss (dB)
Input Return Loss
Output Return Loss
-40
-36
-32
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
32
36
40
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Frequency (GHz)
S21 Response (dB)
S21 Response
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
012345678910
Frequency (GHz)
Return Loss (dB)
Input Return Loss
Output Return Loss
-40
-36
-32
-28
-24
-20
-16
-12
-8
-4
0
4
8
12
16
20
24
28
32
36
40
012345678910
Frequency (GHz)
S21 Response (dB)
S21 Response
Figure 30: 2.4 GHz S21 Response Across
Frequency (VCC = +3.3 V, TC = 25oC)
Figure 31: 5 GHz Return Losses Across
Frequency (VCC = +3.3 V, TC = 25oC) Figure 32: 5 GHz S21 Response Across
Frequency (VCC = +3.3 V, TC = 25oC)
16 Data Sheet - Rev 2.2
04/2006
AWL6950
APPLICA TION INFORMA TION
Figure 33: Application Circuit
5 GHz RF
OUT
2.4 GHz RF
OU
T
2.4 GHz RF
IN
C1
1.0 µF
C2
1.0 µF
AWL6950
GND
1
RF
IN
2G
2
RF
IN
5G
3
GND
4
PAON 5G
5
GND
6
PAON 2G 16
GND 15
V
CC
2G 14
DET
OUT
2G 13
DET
OUT
5G
8
GND 9
V
CC
5G
7
RF
OUT
5G 10
GND 12
RF
OUT
2G 11
5 GHz RF
IN
PAON 2G
PAON 5G
DET
OUT
5G
DET
OUT
2G
V
CC
V
CC
Data Sheet - Rev 2.2
04/2006
AWL6950
17
P ACKAGE OUTLINE
Figure 34: M21 Package Outline - 16 Pin 4 mm x 4 mm x 1.3 mm Surface Mount Module
Figure 35: Branding Specification
E
EA
B
C
G
F
F
D
H
PIN 1
TOP VI EW SI DE VIEW BACK VIEW
PIN 1
PIN 16
DIMENSION MIN TYP MAX
A 1.22 1.30 1.40
B -- 0.30 --
C 0.225 -- 0.505
D -- 0.075 --
E 3.88 4.00 4.12
F 2.56 -- 2.73
G -- 0.65 --
H 0.225 -- 0.505
MILLIMETERS
Top Brand Notes
CC = TH: THAILAND, TW: TAIW AN,
PH: PHILIPPINES, CH: CHINA,
ID: INDO NESI A ; HK: HONG KONG ,
US: UNITED STATES
18 Data Sheet - Rev 2.2
04/2006
AWL6950
Figure 36: Recommended PCB Layout
12mil
31.5mil
1mil 8mil
4mil
45mil 100mil
10mil Via
11.6mil
25.6mil 25.6mil 25.6mil
24.6mil
Solder Paste Mask
(Quantity = 4)
Solder Mask for
Device Pins
Solder Mask for
Device Ground Pad
Data Sheet - Rev 2.2
04/2006
AWL6950
19
NOTES
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
Data Sheet - Rev 2.2
04/2006
20
AWL6950
ORDERING INFORMA TION
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