2SJ554 Silicon P Channel MOS FET REJ03G0901-0400 (Previous: ADE-208-628B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features * Low on-resistance RDS (on) = 0.028 typ. * Low drive current. * 4 V gate drive devices. * High speed switching. Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.4.00 Sep 07, 2005 page 1 of 7 2 3 S 2SJ554 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Symbol VDSS Value -60 Unit V VGSS ID 20 -45 V A -180 -45 A A ID (pulse) IDR Note 1 Note 3 Avalanche current Avalanche energy IAP Note 3 EAR -45 173 A mJ Channel dissipation Channel temperature Pch Tch Note 2 100 150 W C -55 to +150 C Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Tstg Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit V (BR) DSS V (BR) GSS -60 20 -- -- -- -- V V ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 IDSS IGSS -- -- -- -- -10 10 A A VDS = -60 V, VGS = 0 VGS = 16 V, VDS = 0 Gate to source cutoff voltage Static drain to source on state resistance VGS (off) RDS (on) -1.0 -- -- 0.028 -2.0 0.037 V ID = -1 mA, VDS = -10 V Note 4 ID = -25 A, VGS = -10 V Forward transfer admittance RDS (on) |yfs| -- 18 0.038 30 0.055 -- S ID = -25 A, VGS = -4 V Note 4 ID = -25 A, VDS = -10 V Input capacitance Output capacitance Ciss Coss -- -- 2500 1300 -- -- pF pF Reverse transfer capacitance Turn-on delay time Crss td (on) -- -- 300 25 -- -- pF ns VDS = -10 V VGS = 0 f = 1 MHz Rise time Turn-off delay time tr td (off) -- -- 160 350 -- -- ns ns Fall time Body to drain diode forward voltage tf VDF -- -- 240 -1.1 -- -- ns V trr -- 100 -- ns Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Body to drain diode reverse recovery time Note: 4. Pulse test Rev.4.00 Sep 07, 2005 page 2 of 7 Test Conditions Note 4 VGS = -10 V ID = -25 A RL = 1.2 IF = -45 A, VGS = 0 IF = -45 A, VGS = 0 diF/dt = 50 A/s 2SJ554 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating -1000 10 s ID (A) -300 150 Drain Current Channel Dissipation Pch (W) 200 100 50 -100 0 50 100 150 -30 s( era 1s tio ho n( t) Tc =2 5 C) -10 -3 Operation in this area is limited by RDS (on) -1 Case Temperature Ta = 25C -0.1 -0.1 -0.3 -1 200 Tc (C) -5 V -4 V VDS (V) -40 -30 -20 -2.5 V -10 Drain Current -3 V -20 -10 25C Tc = 75C VGS = -2 V 0 -2 -4 -6 -8 Drain to Source Voltage -25C 0 -10 Drain to Source Saturation Voltage vs. Gate to Source Voltage -5 Pulse Test -4 -3 -2 ID = -50 A -1 -20 A -10 A 0 0 -4 -8 -12 Gate to Source Voltage Rev.4.00 Sep 07, 2005 page 3 of 7 -16 -20 VGS (V) 0 -1 -2 -3 -4 Gate to Source Voltage VDS (V) -5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage VDS (on) (V) -100 VDS = -10 V Pulse Test -3.5 V -40 0 -30 -50 Pulse Test -30 Drain Current -10 Typical Transfer Characteristics ID (A) ID (A) -10 V -8 V -3 Drain to Source Voltage Typical Output Characteristics -50 0 1 m s =1 DC 0m s Op -0.3 0 10 PW 1 Pulse Test 0.5 0.2 0.1 0.05 VGS = -4 V 0.02 0.01 -1 -10 V -3 -10 -30 Drain Current -100 -300 -1000 ID (A) 2SJ554 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) () Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 -20 A ID = -50 A 0.06 -10 A VGS = -4 V 0.04 -50 A -10 A, -20 A 0.02 -10 V 0 -40 0 40 80 120 Case Temperature 160 100 30 Tc = -25C 10 25C 3 75C 1 0.3 VDS = -10 V Pulse Test 0.1 -0.1 -0.3 Tc (C) 500 3000 Capacitance C (pF) Reverse Recovery Time trr (ns) 10000 200 100 50 1 3 10 Reverse Drain Current 30 1000 10 100 -8 VDD = -50 V -25 V -10 V -12 -16 -80 ID = -45 A -100 0 40 80 Gate Charge Rev.4.00 Sep 07, 2005 page 4 of 7 120 160 Qg (nc) 0 -10 -20 -30 -40 -50 -20 200 1000 Switching Time t (ns) VGS VGS (V) -4 VDS -60 VGS = 0 f = 1 MHz Switching Characteristics Gate to Source Voltage VDS (V) Drain to Source Voltage -40 Crss Drain to Source Voltage VDS (V) 0 -20 Coss 100 Dynamic Input Characteristics VDD = -10 V -25 V -50 V -100 300 IDR (A) 0 -30 Ciss 30 di / dt = 50 A / s VGS = 0, Ta = 25C 0.3 -10 Typical Capacitance vs. Drain to Source Voltage 1000 10 0.1 -3 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 20 -1 td(off) 500 tf 200 tr 100 50 td(on) 20 VGS = -10 V, VDD = -30 V PW = 5 s, duty 1 % 10 -0.1 -0.3 -1 -3 Drain Current -10 -30 ID (A) -100 2SJ554 Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current IDR (A) -50 -40 -10 V -30 -5 V -20 VGS = 0 -10 Pulse Test 0 0 -0.4 -0.8 -1.2 -1.6 Source to Drain Voltage -2.0 200 IAP = -45 A VDD = -25 V duty < 0.1 % Rg 50 160 120 80 40 0 25 50 75 100 125 150 Channel Temperature Tch (C) VSD (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C D=1 1 0.5 0.3 0.2 0.1 0.1 0.05 ch - c (t) = s (t) * ch - c ch - c = 1.25C/W, Tc = 25C 0.02 PDM 0.03 0.0 1 1 sh p ot uls 0.01 10 D= e PW T PW T 100 10 m 1m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit VDS Monitor Avalanche Waveform L EAR = 1 * L * IAP2 * 2 VDSS VDSS - VDD IAP Monitor Rg V(BR)DSS IAP D.U.T VDD VDS ID Vin -15 V 50 0 Rev.4.00 Sep 07, 2005 page 5 of 7 VDD 2SJ554 Switching Time Test Circuit Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. 90% RL 90% 90% Vin -10 V 50 VDD = -30 V Vout td(on) Rev.4.00 Sep 07, 2005 page 6 of 7 10% tr 10% td(off) tf 2SJ554 Package Dimensions RENESAS Code Package Name MASS[Typ.] SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g 15.6 0.3 Unit: mm 4.8 0.2 1.5 0.3 19.9 0.2 2.0 14.9 0.2 0.5 1.0 3.2 0.2 5.0 0.3 JEITA Package Code 1.6 2.0 1.4 Max 18.0 0.5 2.8 1.0 0.2 3.6 0.6 0.2 0.9 1.0 5.45 0.5 5.45 0.5 Ordering Information Part Name Quantity Shipping Container 2SJ554-E 360 pcs Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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