LME49811TB/NOPB - NATIONAL SEMICONDUCTOR

LME49811

LME49811 Audio Power Amplifier Series High Fidelity 200 Volt Power

Amplifier Input Stage with Shutdown

Literature Number: SNAS394B

LME49811

Audio Power Amplifier Series

November 11, 2009

High Fidelity 200 Volt Power Amplifier Input Stage with

Shutdown

General Description

The LME49811 is a high fidelity audio power amplifier input

stage designed for demanding consumer and pro-audio ap-

plications. Amplifier output power may be scaled by changing

the supply voltage and number of output devices. The

LME49811 is capable of driving an output stage to deliver in

excess of 500 watts single-ended into an 8 ohm load in the

presence of 10% high line headroom and 20% supply regu-

lation.

The LME49811 includes thermal shut down circuitry that ac-

tivates when the die temperature exceeds 150°C. The

LME49811's shutdown function when activated, forces the

LME49811 into shutdown state.

Key Specifications

■ Wide operating voltage range ±20V to ±100V

■ PSRR (f = DC) 115dB (typ)

■ THD+N (f = 1kHz) 0.00035% (typ)

■ Output Drive Current 9mA

Features

■Very high voltage operation

■Scalable output power

■Minimum external components

■External compensation

■Thermal Shutdown

Applications

■Powered subwoofers

■Pro audio

■Powered studio monitors

■Audio video receivers

■Guitar Amplifiers

■High voltage industrial applications

Typical Application

30004862

FIGURE 1. Typical Audio Amplifier Application Circuit

Overture® is a registered trademark of National Semiconductor Corporation.

LME49811 High Fidelity 200 Volt Power Amplifier Input Stage with Shutdown

30004862

Typical Audio Amplifier Application Circuit

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LME49811

Connection Diagram

30004860

Top View

See Order Number LME49811TB

NS = National Logo

U = Fabrication plant code

Z = Assembly plant code

XY = 2 Digit date code

TT = Die traceability

TB = Package code

Pin Descriptions

Pin Pin Name Description

1 NC No Connect, Pin electrically isolated

2 SD Shutdown Control

3 GND Device Ground

4 IN+ Non-Inverting Input

5 IN- Inverting Input

6 Comp External Compensation Connection

7 NC No Connect, Pin electrically isolated

8 NC No Connect, Pin electrically isolated

9 NC No Connect, Pin electrically isolated

10 -VEE Negative Power Supply

11 NC No Connect, Pin electrically isolated

12 NC No Connect, Pin electrically isolated

13 Sink Output Sink

14 Source Output Source

15 +VCC Positive Power Supply

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LME49811

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage |V+| + |V-|200V

Differential Input Voltage +/-6V

Common Mode Input Range 0.4 VEE to 0.4 VCC

Power Dissipation (Note 3) 4W

ESD Rating(Note 4) 2kV

ESD Rating (Note 5) 200V

Junction Temperature (TJMAX) (Note 8) 150°C

Soldering Information

T Package (10 seconds) 260°C

Storage Temperature -40°C to +150°C

Thermal Resistance

θJA 73°C/W

θJC 4°C/W

Operating Ratings (Note 1, Note 2)

Temperature Range

TMIN ≤ TA ≤ TMAX −40°C ≤ TA ≤ +85°C

Supply Voltage |V+| + |V-|+/-20V ≤ VTOTAL ≤ +/-100V

Electrical Characteristics +VCC = -VEE = 50V (Note 1, Note 2)

The following specifications apply for ISD = 1.5mA, Figure 1, unless otherwise specified. Limits apply for TA = 25°C, CC = 30pF.

Symbol Parameter Conditions LME49811 Units

(Limits)

Typical Limit

(Note 6) (Note 7)

ICC

Total Quiescent Power Supply

Current

VCM = 0V, VO = 0V, IO = 0A 14 17 mA (max)

IEE

Total Quiescent Power Supply

Current

VCM = 0V, VO = 0V, IO = 0A 16 19 mA (max)

THD+N Total Harmonic Distortion +

Noise

No load, AV = 29dB

VOUT = 20VRMS, f = 1kHz 0.00055 0.0015 % (max)

AVClosed Loop Voltage Gain 26 dB (min)

AVOpen Loop Gain VIN = 1mVRMS, f = 1kHz 93 dB

f = DC 120 dB

VOM Output Voltage Swing THD+N = 0.05%, Freq = 20Hz to 20kHz 33 VRMS

VNOISE Output Noise LPF = 30kHz, Av = 29dB 100 μV

A-weighted 70 180 μV (max)

IOUT Output Current Outputs Shorted 8 6.5 mA(min)

ISD Current into Shutdown Pin To put part in “play” mode 1.5 1

mA(min)

mA (max)

SR Slew Rate VIN = 1.2VP-P, f = 10kHz square Wave,

Outputs shorted 16 13 V/μs (min)

VOS Input Offset Voltage VCM = 0V, IO = 0mA 1 3 mV (max)

IBInput Bias Current VCM = 0V, IO = 0mA 100 nA

PSRR Power Supply Rejection Ratio DC, Input Referred 115 105 dB (min)

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LME49811

Electrical Characteristics +VCC = –VEE = 100V (Note 1, Note 2)

The following specifications apply for ISD = 1.5mA, Figure 1, unless otherwise specified. Limits apply for TA = 25°C.

Symbol Parameter Conditions LME49811 Units

(Limits)

Typical Limit

(Note 6) (Note 7)

ICC

Total Quiescent Power Supply

Current VCM = 0V, VO = 0V, IO = 0A 17 22 mA (max)

IEE

Total Quiescent Power Supply

Current VCM = 0V, VO = 0V, IO = 0A 19 24 mA (max)

THD+N Total Harmonic Distortion +

Noise

No load, AV = 30dB

VOUT = 30VRMS, f = 1kHz 0.00035 0.001 % (max)

AVClosed Loop Voltage Gain 26 dB (min)

AVOpen Loop Gain VIN = 1mVRMS, f = 1kHz 93 dB

f = DC 120 dB

VOM Output Voltage Swing THD+N = 0.05%, Freq = 20Hz to 20kHz 68 VRMS

VNOISE Output Noise LPF = 30kHz, Av = 29dB 100 μV

A-weighted 70 180 μV (max)

IOUT Output Current Outputs Shorted 9 7 mA(min)

ISD Current into Shutdown Pin To put part in “play” mode 1.5 1

mA(min)

mA (max)

SR Slew Rate VIN = 1.2VP-P, f = 10kHz square Wave,

Outputs shorted 17 14 V/μs (min)

VOS Input Offset Voltage VCM = 0V, IO = 0mA 1 3 mV (max)

IBInput Bias Current VCM = 0V, IO = 0mA 100 nA (max)

PSRR Power Supply Rejection Ratio f = DC, Input Referred 115 105 dB (min)

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability

and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in

the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the

device should not be operated beyond such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified

Note 2: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified

or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed.

Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature, TA. The maximum

allowable power dissipation is PDMAX = (TJMAX - TA) / θJA or the number given in Absolute Maximum Ratings, whichever is lower.

Note 4: Human body model, applicable std. JESD22-A114C.

Note 5: Machine model, applicable std. JESD22-A115-A.

Note 6: Typical values represent most likely parametric norms at TA = +25ºC, and at the Recommended Operation Conditions at the time of product

characterization and are not guaranteed.

Note 7: Datasheet min/max specification limits are guaranteed by test or statistical analysis.

Note 8: The maximum operating junction temperature is 150°C.

Note 9: The Data taken with Bandwidth = 30kHz, AV = 29dB, CC = 30pF, and TA = 25°C except where specified.

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LME49811

Typical Performance Characteristics for LME49811 (Note 9)

THD+N vs Frequency

+VCC = –VEE = 100V, VO = 14V

30004873

THD+N vs Frequency

+VCC = –VEE = 100V, VO = 30V

30004874

THD+N vs Frequency

+VCC = –VEE = 50V, VO = 10V

30004871

THD+N vs Frequency

+VCC = –VEE = 50V, VO = 20V

30004872

THD+N vs Frequency

+VCC = –VEE = 20V, VO = 5V

30004869

THD+N vs Frequency

+VCC = –VEE = 20V, VO = 10V

30004870

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LME49811

THD+N vs Output Voltage

+VCC = –VEE = 50V, f = 20Hz

30004879

THD+N vs Output Voltage

+VCC = –VEE = 100V, f = 20Hz

30004882

THD+N vs Output Voltage

+VCC = –VEE = 50V, f = 1kHz

30004878

THD+N vs Output Voltage

+VCC = –VEE = 100V, f = 1kHz

30004881

THD+N vs Output Voltage

+VCC = –VEE = 50V, f = 20kHz

30004880

THD+N vs Output Voltage

+VCC = –VEE = 100V, f = 20kHz

30004883

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LME49811

THD+N vs Output Voltage

+VCC = –VEE = 20V, f = 20kHz

30004876

THD+N vs Output Voltage

+VCC = –VEE = 20V, f = 1kHz

30004875

THD+N vs Output Voltage

+VCC = –VEE = 20V, f = 20kHz

30004877

Closed Loop Frequency Response

+VCC = –VEE = 50V, VIN = 1VRMS

30004863

Closed Loop Frequency Response

+VCC = –VEE = 100V, VIN = 1VRMS

30004864

Output Voltage vs Supply Voltage

300048a0

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LME49811

PSRR vs Frequency

+VCC = –VEE = 100V, No Filters

Input Referred, VRIPPLE = 1VRMS on VCC pin

30004845

PSRR vs Frequency

+VCC = –VEE = 50V, No Filters

Input Referred, VRIPPLE = 1VRMS on VCC pin

30004844

PSRR vs Frequency

+VCC = –VEE = 100V, No Filters

Input Referred, VRIPPLE = 1VRMS on VEE pin

30004868

PSRR vs Frequency

+VCC = –VEE = 50V, No Filters

Input Referred, VRIPPLE = 1VRMS on VEE pin

30004866

Open Loop and Phase Upper-Phase

Lower Gain

30004837

Supply Current vs Supply Voltage

300048a1

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LME49811

Test Circuit

30004861

FIGURE 3. Test Circuit

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LME49811

Application Information

SHUTDOWN FUNCTION

The shutdown function of the LME49811 is controlled by the

amount of current that flows into the shutdown pin. If there is

less than 1mA of current flowing into the shutdown pin, the

part will be in shutdown. This can be achieved by shorting the

shutdown pin to ground or by floating the shutdown pin. If

there is between 1mA and 2mA of current flowing into the

shutdown pin, the part will be in “play” mode. This can be done

by connecting a reference voltage to the shutdown pin

through a resistor (RM). The current into the shutdown pin can

be determined by the equation ISD = (VREF – 2.9) / RM. For

example, if a 5V power supply is connected through a

1.4kΩ resistor to the shutdown pin, then the shutdown current

will be 1.5mA, at the center of the specified range. It is also

possible to use VCC as the power supply for the shutdown pin,

though RM will have to be recalculated accordingly. It is not

recommended to flow more than 2mA of current into the shut-

down pin because damage to the LME49811 may occur.

It is highly recommended to switch between shutdown and

“play” modes rapidly. This is accomplished most easily

through using a toggle switch that alternatively connects the

shutdown pin through a resistor to either ground or the shut-

down pin power supply. Slowly increasing the shutdown cur-

rent may result in undesired voltages on the outputs of the

LME49811, which can damage an attached speaker.

THERMAL PROTECTION

The LME49811 has a thermal protection scheme to prevent

long-term thermal stress of the device. When the temperature

on the die exceeds 150°C, the LME49811 shuts down. It

starts operating again when the die temperature drops to

about 145°C, but if the temperature again begins to rise, shut-

down will occur again above 150°C. Therefore, the device is

allowed to heat up to a relatively high temperature if the fault

condition is temporary, but a sustained fault will cause the

device to cycle in a Schmitt Trigger fashion between the ther-

mal shutdown temperature limits of 150°C and 145°C. This

greatly reduces the stress imposed on the IC by thermal cy-

cling, which in turn improves its reliability under sustained

fault conditions.

Since the die temperature is directly dependent upon the heat

sink used, the heat sink should be chosen so that thermal

shutdown is not activated during normal operation. Using the

best heat sink possible within the cost and space constraints

of the system will improve the long-term reliability of any pow-

er semiconductor device, as discussed in the Determining

the Correct Heat Sink section.

POWER DISSIPATION AND HEAT SINKING

When in “play” mode, the LME49811 draws a constant

amount of current, regardless of the input signal amplitude.

Consequently, the power dissipation is constant for a given

supply voltage and can be computed with the equation

PDMAX = ICC* (VCC– VEE).

DETERMINING THE CORRECT HEAT SINK

The choice of a heat sink for a high-power audio amplifier is

made entirely to keep the die temperature at a level such that

the thermal protection circuitry is not activated under normal

circumstances.

The thermal resistance from the die to the outside air, θJA

(junction to ambient), is a combination of three thermal resis-

tances, θJC (junction to case), θCS (case to sink), and θSA (sink

to ambient). The thermal resistance, θJC (junction to case), of

the LME49811 is 0.4 °C/W. Using Thermalloy Thermacote

thermal compound, the thermal resistance, θCS (case to sink),

is about 0.2°C/W. Since convection heat flow (power dissi-

pation) is analogous to current flow, thermal resistance is

analogous to electrical resistance, and temperature drops are

analogous to voltage drops, the power dissipation out of the

LME49811 is equal to the following:

PDMAX = (TJMAX−TAMB) / θJA (1)

where TJMAX = 150°C, TAMB is the system ambient tempera-

ture and θJA = θJC + θCS + θSA.

30004855

Once the maximum package power dissipation has been cal-

culated using equation 1, the maximum thermal resistance,

θSA, (heat sink to ambient) in °C/W for a heat sink can be

calculated. This calculation is made using equation 2 which

is derived by solving for θSA in equation 1.

θSA = [(TJMAX−TAMB)−PDMAX(θJC +θCS)] / PDMAX (2)

Again it must be noted that the value of θSA is dependent upon

the system designer's amplifier requirements. If the ambient

temperature that the audio amplifier is to be working under is

higher than 25°C, then the thermal resistance for the heat

sink, given all other things are equal, will need to be smaller.

PROPER SELECTION OF EXTERNAL COMPONENTS

Proper selection of external components is required to meet

the design targets of an application. The choice of external

component values that will affect gain and low frequency re-

sponse are discussed below.

The gain of each amplifier is set by resistors RF and Ri for the

non-inverting configuration shown in Figure 1. The gain is

found by Equation 3 below:

AV = RF / Ri (V/V) (3)

For best noise performance, lower values of resistors are

used. A value of 1kΩ is commonly used for Ri and then setting

the value of RF for the desired gain. For the LME49811 the

gain should be set no lower than 26dB. Gain settings below

26dB may experience instability.

The combination of Ri with Ci (see Figure 1) creates a high

pass filter. The low frequency response is determined by

these two components. The -3dB point can be found from

Equation 4 shown below:

fi = 1 / (2πRiCi) (Hz) (4)

If an input coupling capacitor is used to block DC from the

inputs as shown in Figure 5, there will be another high pass

filter created with the combination of CIN and RIN. When using

a input coupling capacitor RIN is needed to set the DC bias

point on the amplifier's input terminal. The resulting -3dB fre-

quency response due to the combination of CIN and RIN can

be found from Equation 5 shown below:

fIN = 1 / (2πRINCIN) (Hz) (5)

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LME49811

With large values of RIN oscillations may be observed on the

outputs when the inputs are left floating. Decreasing the value

of RIN or not letting the inputs float will remove the oscillations.

If the value of RIN is decreased then the value of CIN will need

to increase in order to maintain the same -3dB frequency re-

sponse.

COMPENSATION CAPACITOR

The compensation capacitor (CC) is one of the most critical

external components in value, placement and type. The ca-

pacitor should be placed close to the LME49811 and a silver

mica type will give good performance. The value of the ca-

pacitor will affect slew rate and stability. The highest slew rate

is possible while also maintaining stability through out the

power and frequency range of operation results in the best

audio performance. The value shown in Figure 1 should be

considered a starting value with optimization done on the

bench and in listening testing.

SUPPLY BYPASSING

The LME49811 has excellent power supply rejection and

does not require a regulated supply. However, to eliminate

possible oscillations all op amps and power op amps should

have their supply leads bypassed with low-inductance capac-

itors having short leads and located close to the package

terminals. Inadequate power supply bypassing will manifest

itself by a low frequency oscillation known as “motorboating”

or by high frequency instabilities. These instabilities can be

eliminated through multiple bypassing utilizing a large elec-

trolytic capacitor (10μF or larger) which is used to absorb low

frequency variations and a small ceramic capacitor (0.1μF) to

prevent any high frequency feedback through the power sup-

ply lines. If adequate bypassing is not provided the current in

the supply leads which is a rectified component of the load

current may be fed back into internal circuitry. This signal

causes low distortion at high frequencies requiring that the

supplies be bypassed at the package terminals with an elec-

trolytic capacitor of 470μF or more.

OUTPUT STAGE USING BIPOLAR TRANSISTORS

With a properly designed output stage and supply voltage of

±100V, an output power up to 500W can be generated at

0.05% THD+N into an 8Ω speaker load. With an output cur-

rent of several amperes, the output transistors need substan-

tial base current drive because power transistors usually have

quite low current gain—typical hfe of 50 or so. To increase the

current gain, audio amplifiers commonly use Darlington style

devices or additional driver stages. Power transistors should

be mounted together with the VBE multiplier transistor on the

same heat sink to avoid thermal run away. Please see the

section Biasing Technique and Avoiding Thermal Run-

away for additional information.

BIASING TECHNIQUES AND AVOIDING THERMAL

RUNAWAY

A class AB amplifier has some amount of distortion called

Crossover distortion. To effectively minimize the crossover

distortion from the output, a VBE multiplier may be used in-

stead of two biasing diodes. A VBE multiplier normally consists

of a bipolar transistor (QMULT, see Figure 1) and two resistors

(RB1 and RB2, see Figure 1). A trim pot can also be added in

series with RB1 for optional bias adjustment. A properly de-

signed output stage, combine with a VBE multiplier, can elim-

inate the trim pot and virtually eliminate crossover distortion.

The VCE voltage of QMULT (also called BIAS of the output

stage) can be set by following formula:

VBIAS = VBE(1+RB2/RB1) (V) (6)

When using a bipolar output stage with the LME49811 (as in

Figure 1), the designer must beware of thermal runaway.

Thermal runaway is a result of the temperature dependence

of VBE (an inherent property of the transistor). As temperature

increases, VBE decreases. In practice, current flowing through

a bipolar transistor heats up the transistor, which lowers the

VBE. This in turn increases the current gain, and the cycle re-

peats. If the system is not designed properly this positive

feedback mechanism can destroy the bipolar transistors used

in the output stage. One of the recommended methods of

preventing thermal runaway is to use the same heat sink on

the bipolar output stage transistor together with VBE multiplier

transistor. When the VBE multiplier transistor is mounted to the

same heat sink as the bipolar output stage transistors, it tem-

perature will track that of the output transistors. Its VBE is

dependent upon temperature as well, and so it will draw more

current as the output transistors heat up, reducing the bias

voltage to compensate. This will limit the base current into the

output transistors, which counteracts thermal runaway. An-

other widely popular method of preventing thermal runaway

is to use low value emitter degeneration resistors (RE1 and

RE2). As current increases, the voltage at the emitter also in-

creases, which decreases the voltage across the base and

emitter. This mechanism helps to limit the current and coun-

teracts thermal runaway.

LAYOUT CONSIDERATION AND AVOIDING GROUND

LOOPS

A proper layout is virtually essential for a high performance

audio amplifier. It is very important to return the load ground,

supply grounds of output transistors, and the low level (feed-

back and input) grounds to the circuit board common ground

point through separate paths. When ground is routed in this

fashion, it is called a star ground or a single point ground. It

is advisable to keep the supply decoupling capacitors of

0.1μF close as possible to LME49811 to reduce the effects of

PCB trace resistance and inductance. Following the general

rules will optimize the PCB layout and avoid ground loops

problems:

a) Make use of symmetrical placement of components.

b) Make high current traces, such as output path traces, as

wide as possible to accommodate output stage current re-

quirement.

c) To reduce the PCB trace resistance and inductance, same

ground returns paths should be as short as possible. If pos-

sible, make the output traces short and equal in length.

d) To reduce the PCB trace resistance and inductance,

ground returns paths should be as short as possible.

e) If possible, star ground or a single point ground should be

observed. Advanced planning before starting the PCB can

improve audio performance.

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LME49811

Demonstration Board Layout

300048f5

Silkscreen Layer

300048f6

Top Layer

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LME49811

300048f4

Bottom Layer

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LME49811

Revision History

Rev Date Description

1.0 12/19/07 Initial release.

1.01 01/04/08 Edited the project title (replaced “Driver” with “Power Amplifier

Input Stage”.

1.02 11/11/09 Fixed the spacing between the equations 3, 4, 5, and 6 to the

units measures.

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LME49811

Physical Dimensions inches (millimeters) unless otherwise noted

Non-Isolated TO–247 15 Lead Package

NS Package Number TB15A

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LME49811

Notes

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LME49811

Notes

LME49811 High Fidelity 200 Volt Power Amplifier Input Stage with Shutdown

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