20
N-Channel Enhancement Mode Field Effect Transistor
Oct .29 2004 V1.1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS V
Gate-Source Voltage VGS V
Drain Current-Continuous @TJ=25 C
-Pulsed
ID 3.6 A
A
A
W
IDM 14
Drain-Source Diode Forward Current IS 1.25
Maximum Power Dissipation PD
Operating Junction and Storage
Temperature Range TJ, TSTG -55 to 150 C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient RthJA 100 /W
C
STS2320
1.25
a
a
a
a
b
G
DS
SOT-23
S
G
D
1
SamHop Microelectronics Corp.
PRODUCT SUMMARY
VDSS IDRDS(ON) ( m
W
) Max
20V 3.6A
45@ VGS = 4.5V
65@ VGS =2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-23 package.
10
STS2320
ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)
=
Parameter Symbol Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS =
VGS 0V, ID 250uA
=20 V
Zero Gate Voltage Drain Current IDSS VDS 16V, VGS 0V
= = 1uA
Gate-Body Leakage IGSS VGS 10V, VDS 0V
== 100 nA
ON CHARACTERISTICS b
Gate Threshold Voltage VGS(th) VDS VGS, ID = 250uA
=0.6 1.5 V
Drain-Source On-State Resistance RDS(ON) VGS 4.5V, ID 3A 32 45
VGS 2.5V, ID 2A 50 65
On-State Drain Current ID(ON) VDS = 5V, VGS = 4.5V A
SForward Transconductance FS
gVDS 5V, ID
DYNAMIC CHARACTERISTICSc
Input Capacitance CISS
CRSS
COSS
Output Capacitance
Reverse Transfer Capacitance
VDS =15V, VGS = 0V
f =1.0MHZ
PF
PF
PF
SWITCHING CHARACTERISTICSc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD = 10V,
ID = 1A,
VGS = 4.5V,
RL = 10 ohm
RGEN = 6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =10V, ID = 3.5A,
VGS =4.5V
nC
nC
nC
C
Fall Time
=
=
=
=
=
2
m-ohm
m-ohm
10
=3A
641
135
101
19.6
4
26
15.7
9.1
1.4
3.2
8
0.9
STS2320
Parameter Symbol Condition Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage VSD VGS = 0V, Is =1.25A 0.81 1.2 V
b
C
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
Figure 1. Output Characteristics Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Capacitance
VDS, Drain-to Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
ID, Drain Current(A)
C, Capacitance (pF)
On-Resistance(Ohms)
(Normalized) ID, Drain Current (A)
a.Surface Mounted on FR4 Board, t 10sec.
RDS(ON),
5
0 5 10 15 20 25 30
Ciss
Coss
1150
900
750
500
250
0
20
16
12
8
4
0
0 1 2 3 4 5 6
VGS=10,9,8,7,6,5,4V
3
2.2
1.8
1.4
1.0
0.6
0.2
0
-50 0 50 100 125
Tj( C)
-25 25 75
V
GS
=4.5V
I
D
=3A
Crss
25 C
25
20
15
10
5
0
0.0 0.5 1 1.5 2 2.5 3
Tj=125 C -55 C
VGS=2V
VGS=3V
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Vth, Normalized
Gate-Source Threshold Voltage
gFS, Transconductance (S)
VGS, Gate to Source Voltage (V)
BVDSS, Normalized
Drain-Source Breakdown Voltage
Is, Source-drain current (A)
Figure 7. Transconductance Variation
with Drain Current
IDS, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
VDS, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
VSD, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C) Tj, Junction Temperature ( C)
ID, Drain Current (A)
20
10
0
1
0.4 0.6 0.8 1.0 1.2 1.4
4
5
3
2
1
0
0 2 4 6 8 10 12 14 16
VDS=10V
ID=3.5A
TJ=25 C
50
10
11
0.1
0.03
0.1 1 10 20 50
RDS(ON) Limit
10ms
100ms
1s
DC
VGS=4.5V
Single Pulse
Tc=25 C
4
-50 -25 0 25 50 75 100 125
1.3
1.2
1.1
1.0
0.9
0.8
0.7
ID=250uA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125
VDS=VGS
ID=250uA
15
12
9
6
18
0
0 5 10 15 20 25
3
VDS=5V
STS2320
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
td(off)
90%
10% 10%
50% 50%
90%
toff
tf
90%
PULSE WIDTH
5
INVERTED
VDD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
5
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
Normalized Transient
Thermal Resistance
Single Pulse
on
PDM
t1
t2
1. RthJA (t)=r (t) * R JA
2. R JA=See Datasheet
3. TJM-TA = PDM* R JA (t)
4. Duty Cycle, D=t1/t2
th
th
th
0.01
0.02
0.5
0.2
0.1
0.05
STS2320
J
2.70
2.40
1.40
0.35
0
0.45
1.90 REF.
1.00
0.10
3.10
2.80
1.60
0.50
0.10
0.55
1.30
0.20
0.106
0.094
0.055
0.014
0
0.018
0.039
0.004
0.122
0.110
0.063
0.020
0.004
0.022
0.051
0.008
0.40
0.45 1.15
0.016
0.033 0.045
6
G
A
F
C
B
L
D (TYP.)
E
H
M
I
F
G
I
J
L
M
0.075 REF.
--
0° 10° 0° 10°
STS2320
SOT-23 Tape and Reel Data
SOT-23 Carrier Tape
SOT-23 Reel
7
3.20
±0.10
3.00
±0.10
1.33
±0.10
∮1.00
+0.25
∮1.50
+0.10
8.00
+0.30
-0.10
1.75
±0.10
3.50
±0.05
4.00
±0.10
4.00
±0.10
2.00
±0.05
0.20
±0.02
∮178 ∮178
±1
∮60
±1
9.00
±0.5
12.00
±0.5
∮13.5
±0.5
2.00
±0.5
∮10.0 18.00
5.00
8㎜
V
UNIT:㎜
RG
S
KH
W1
W
NM
10.5
REEL SIZETAPE SIZE
UNIT:㎜
PACKAGE
SOT-23
A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T
STS2320
