ATC-SD Home Page High power laser diode manufacturer Most high-tech companies keep their know-how in secret and sell only ready products. We have the opposite strategy. Our main product is know-how. There is equipment and Equipment. We offer you Equipment which is fully adapted for real A3B5 technologies. We offer products manufactured using ATC-SD original technology. Our devices demonstrate characteristics at the top level of this technology. You can buy them, or make them yourself using our technology. Site Map About Know-How PLA - phase-locked array Products High power laser diodes 780 - 980 nm, 0.1 - 4.0 W Description Model coding Specifications Graphs Package types Laser linear arrays Cooling heads Focusing optics NEW! Laser diode drivers Atcus-15 medical device Diode pumped solid-state lasers Equipment Molecular beam epitaxy ATC-EP3 machine Chemical-molecular beam epitaxy ATC-EPN2 machine High vacuum quadrupole mass spectrometer QMS-1 ATC-SD Home Page Multi-purpose ultra high vacuum system UHVS-4 High-temperature vacuum furnace VF-1 Universal vacuum station SD-40 (T, M, E, G) SD-40T - Basic unit with resistive evaporation unit SD-40E - Basic unit with dry etching unit SD-40M - Basic unit with magnetron sputtering unit SD-40G - Basic unit with electron evaporation unit NEW! Medicine Events Frequently Asked Questions Please contact us: Phone: +7 (812) 244-2532 P.O.BOX 29, St.Petersburg, 194156 RUSSIA Fax: +7 (812) 244-2544 E-mail: ter@atc.rfntr.neva.ru You are visitor No. since February 29th, 1998 ATC-SD's know-hows in semiconductor technology KNOW - HOW Most high-tech companies keep their know-how in secret and sell only ready products. We have the opposite strategy. Our main product is KNOW-HOW. Manufacturing of 0.78-0.98 mkm high power laser diodes (LDs) with output optical power of up to 4 W (CW) and laser linear arrays with output optical power of up to 100 W (QCW), including growth of heterostructures and post-growth processing. An original technological cycle provides manufacturing of quantum well (QW) stripe lasers (partially phase-locked arrays) and includes the following basic technological operations: laser heterostructure MBE growth ohmic contact deposition and annealing mask fabrication for dry etching dry etching by collimated ion beam additional insulation technique of etched regions evaporation of adhesive and enhancing metal layers sputtering of laser multilayer dielectric mirrors and antireflection protective coatings laser diode package testing Applications: solid state laser pumping, medicine (therapy, ophthalmology, oncology, surgery), free space communication, beacon and illumination, alarm systems, automatics and robotics, spectroscopy and other scientific applications. ATC-SD offers a complete set of technical documentation, provides training and know-how transfer to Customer's staff both in the laboratories of the ATC-SD and of the Customer. ATC-SD also offers technological equipment providing implementation of the developed technological processes with highest efficiency. Options (Know-How) Know-how for fabrication of high power laser linear arrays with output optical power up to 100W in Quasi-CW mode. Know-how for fabrication of laser diode pumped Nd: YAG solid-state lasers is offered on the base of cooperation with Vavilov State Optical Institute (St. Petersburg). Know-how for fabrication of quantum well InGaAlAs strained laser wafers by the Molecular ATC-SD's know-hows in semiconductor technology Beam Epitaxy. Options (Equipment) 1. Growth equipment. ATC-EP3 MBE System - a solid source single-wafer-reactor molecular beam epitaxial system specially designed for high quality III-V compound growth and applied for growing laser and transistor (FET, HEMT) heterostructures. 2. Postgrowth Equipment based on the universal vacuum stations SD-40 developed by the ATC-SD. It features small footprint, easily adaptability to any technological process. Modifications of SD-40 are used for resistive vacuum spattering of metals, for dry etching, for magnetron deposition of dielectric and insulating layers. This set of the postgrowth equipment may also include: laser interferometer, device for wafer thinning, laser diode testing machines. New materials for opto- and microelectronics (R&D on GaN, InGaAlN) The new technical revolution in semiconductor optoelectronics is expected due to development of production technology of band-to-band light emitting and laser diodes for blue-green spectral range. In turn, this will result in significant broadening of semiconductor devices application areas: 1. Blue-green LEDs - full color semiconductor displays and indicators: substitution of vacuum kinescopes new generation of TV and video super-brightness full color advertising and signal lamps 2. Ultra-violet, blue and green laser diodes - significant increase of information density in optical storage devices: substitution of magnet media of information storage by optical ones new generation of computers 3. High-frequency, high-temperature microelectronic devices - in combination with chemical resistivity. Why has ATC-SD opted for MBE for Group III nitride growth, when Japanese and US companies have gone for MOVPE? The main notion of ATC-SD is that effective MBE epitaxial growth of group-III nitride layers of ATC-SD's know-hows in semiconductor technology device quality needs development of the special CBE growth equipment fully adopted to specific features of these materials. Such a growth machine ATC EPN-1 where the ammonia is applied as one of the sources has been designed and fabricated in our company in 1997. The main peculiarity of this machine as compared to traditional MBE equipment is using of significantly higher (~100 times) gas flow (see related article The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia). This is requirement necessary for growth of high-quality epitaxial layers. At the very first months of work the high-quality layers of GaN were obtained with this machine. Simultaneously the main post-growth operations were worked off for AlN and GaN layers. In particular, using of ion dry etching of AlN and GaN allows us to get reproducibly the etching rates of 12 nm/min and 15 nm/min respectively. Why is ATC-SD's approach to MBE (use of ammonia source) better and is anyone else doing this? Now the possible customers have the unique opportunity to take part in ATC-SD R&D program. In 1-1.5 years we expect to have got complete growth and post-growth technology of group-III nitride based devices. Since that time we will offer for selling the manufacturing technology along with the set of special equipment. We are open for any kind of co-operation Home | About | Know-how | Products | Equipment | Medicine | Events | FAQ | Contact ATC-SD high power laser diodes High-power semiconductor laser diodes wavelengths 780...820 and 960...980 nm We offer Description Model coding Specifications Graphs Package types laser diodes with CW output power from 100 mW to 4 W, in various packages QCW laser linear arrays with output power of 25, 40 and 100 W laser cooling heads feedback photodiode, thermistor, microcooler, microlens additional optics CW laser drivers experimental lasers manufactured in accordance with the customer's assignment medical device Atcus-15 based on our laser diodes diode pumped solid-state lasers, which use our laser diodes as source of pump radiation Fields of application Medicine (therapy, surgery, oncology, oftalmology, cosmetology), systems of local communications, alarm systems, automatics and robotics, pumping of solid state lasers (spectroscopy, laser gyros), sensing spectroscopy, research and development. Our laser diodes have a special chip design - Phase-Locked Array How can ATC-SD confirm high quality of these laser diodes? Main technical data Wavelength range Spectral width (FWHM) Beam divergance 780...820 or 960...980 nm 2 nm 40 x 10 degrees Temperature coefficients 120...140 oC To can be modeled as ITH2=ITH1 exp [ (T2-T1)/To] threshold current, T0 Thermal resistance Series resistance, typical operating current 0.8 % / oC wavelength generation 0.3 nm/ oC 5...10 oC /W Rs=(Voper-1,5V)/Iop ATC-SD high power laser diodes sensitivity operates without reverse bias TB-31-0,6/0,8 for ATC-C50 Max. Drive ... ATC-C500 Current TB-17-1,0/0,7 for ATC-C1000 ... ATC-C1200 Thermoelectric Cooler TB-31-0,6/0,8 for ATC-C50 Max. Drive ... ATC-C500 Voltage TB-17-1,0/0,7 for ATC-C1000 ... ATC-C1200 Monitor photodiode Thermistor R @ 25 oC Home | About | Know-How | 0.3 ... 10 mkA/mW 2.0 A 7.0 A 3.5 V 2.0 V 10 kOhm 5% Products | Equipment | News | FAQ | Contact Laser diodes Linear arrays Cooling heads Focusing optics Drivers Atcus-15 DPSSLs ATC LDs description ATC laser diodes description The ATN series laser diodes are manufactured on the base of the MBE and MOCVD grown AlGaAs quantum well heterostructures. This technologies provide a very accurate control of the chemical composition and grown layer thickness' and ensure high reproducibility of device parameters. Application of quantum well structures (active layer thickness 100-200 A) provides low threshold current densities and high optical output power. The ATN laser diodes are fabricated as partially phase-locked laser arrays with the period of about 10 m m and total width from 40 to 500 m m. Innovative postgrowth technologies enable to develop a highly efficient technological cycle for the fabrication of the ridge type laser arrays with additional interstripe isolation. Lasers are soldered on the heat sink with the epitaxial layers down, that ensures efficient heat removal and provides high optical output power. ATC-SD carries out testing of each device (500 hours CW operation) and one-off certification after the test. This procedure ensures the selection of highly reliable samples. So what is a lifetime of ATC-SD's laser diodes? Lasers are manufactured in the following three types of packages: open heat sink, the ATC package and TO-3 package. Lasers of the "open heat sink" type are the cheapest and allow different manipulations with the laser crystal. They are preferable if the user carries out scientific investigations and encapsulates the entire radiator unit by himself. ATC package is a hermetically sealed case with flat output window. This unit allows operation without complementary heat sink in a pulsed mode and in some cases, in a CW mode. Small heat resistance of ATC package provides low temperature difference between external package surface and laser (less then 5 degree). TO-3 package is adjusted to the international standards. This package includes Peltier-microcooler and thermistor and allows to maintain constant operation temperature. All packages may contain cylindrical microlens as an option. In this case customer can work without additional optical systems or use unexpensive longfocuse lens. What is a microlens? What does it do? All packages may contain a monitor photodiode as an option, which ensures stabilization of the radiation power. Photodiode characteristics are linear in wide power range. The photodiode operates without opposite bias, the response time is about 50 ns. The sensitivity of photodiode is 0.3-10 m A/mW. Are the microlens and feedback photodiode removable? ATC LDs description Laser linear arrays are delivered on an open heat sink and intended for side pumping of YAG:Nd rods. It is necessary to use TE cooler for ensuring needed operating conditions for laser array operation. Laser array emitting dimension is more then 70% of the heat sink width, it is allowed to use several laser arrays semultaneously for one YAG:Nd rod pumping. It is necessary to use special driver for laser array supply which can be made by special order. Unique chip design of the laser diodes manufactured by ATC-SD Phase-Locked Array Our laser chips have a special structure, which allows to get uniform distribution of the output optical power, high time and space stability, lower noise, higher life-time and other significant advantages over common type ones. These properties also lead to higher quality of radiation of the solid-state lasers pumped with our diodes. Researchers of ATC-SD, Dr. D.M.Demidov, Dr. N.I.Katsavets, Dr. A.L.Ter-Martirosyan and Dr. V.P.Chaly described PPLA in an article "High-power stabilized laser diodes for solid-state lasers pumping", published in the "Quantum electronics" all-Russian magazine, issue 28 (9) 768-770 (1998). Patented technology The latest ATC-SD Patent registered by Rospatent (Russian Agency for Patents and Trademarks) is devoted to PLA construction of the laser diode chip. The high temporal and space stability as well as the long life-time of laser diodes manufactured using this design is very important for their application in high stability diode pumped solid-state lasers. Report on SPIE Conference Laser Optics '98 SPIE 9th conference on Laser Optics (LO'98) was held in St.Petersburg, Russia, on June 22-26th, 1998. Dr. Hermann Grempel from BremLas Lasertechnik Bremen GmbH, a German company which uses our LDs for pumping of DPSSLs, presented a joint report, demonstrating advantages of PPLA chip design for pumping of solid-state lasers. This report is published in SPIE proceedings, vol.3682-05. Unique chip design of the laser diodes manufactured by ATC-SD Home | About | Know-How | Products | Equipment | News | FAQ | Contact Quantum Electronics 28 Powerful highly stable laser diodes for pumping of solid-state lasers D M Demidov, N I Katsavets, A L Ter-Martirosyan, V P Chaly Quantum Electronics 28(9) 768-770 (1998). PACS numbers: 42.55.Px, 42.55.Xi (c)1998 Kvantovaya Elektronika and Turpion Ltd. ABSTRACT. Powerful laser diodes, representing partly phase-locked laser arrays based on quantum-well heterostructures, were developed. The high temporal and spatial stability, and the long service life of such laser diodes make them suitable for optical pumping of solid-state lasers. Powerful semiconductor laser diodes (LDs) are used very widely in various branches of science and technology. In addition to their direct utilisation in laser device manufacture (laser communications, measuring instruments, medicine, spectroscopy, etc.), they have recently become very popular as pump sources for solid-state lasers based on garnet crystals doped with rare-earth elements. The development of solid-state lasers pumped optically with semiconductor lasers ('diode pumping') has led to fabrication of a new generation of lasers operating in various spectral ranges (0.47-2.9 um). The main advantages of diode-pumped solid-state lasers is their high efficiency, the absence of water cooling, and the relatively small size of the laser source and control unit [1]. LDs used to pump such solid-state lasers should have a high optical output power, a narrow spectral emission band, a long operating life, and a high spatiotemporal stability of the distribution of the radiation intensity [2]. We shall report the latest development of powerful LDs based on partly phase-locked arrays. Such LDs were made from quantum-well laser heterostructures with separate electron and optical confinement, fabricated by the molecular beam [3] and MOCVD epitaxy methods, and designed for optical pumping of solid-state lasers. The main shortcoming of the traditional LDs with a wide stripe contact is a relatively low spatiotemporal stability associated with an inhomogeneity of the distribution of the optical power in the emitting stripe [4]. This instability is the result of the presence in a stripe of channels with the most favourable conditions for the generation of radiation (with the lowest optical losses or the highest optical gain), known as 'filaments' [5]. The dimensions and the spatial distribution of these filaments are extremely sensitive to the pump current and temperature. Fluctuations of these parameters alter drastically the lasing conditions and result in filament switching, which redistributes the optical power in the LD cavity. This increases the If optical noise and oscillations, as well as fluctuations of the radiation profile in the near-field and far-field zones. The temporal and spatial characteristics of LDs can be improved if, instead of the traditional wide stripe contact, the LD has the design of a shallow mesa with additional isolation [6], shown in Fig. 1. Here, a contact on the side of the p-type GaAs layer represents a system of coupled stripe emitters (a partly phase-locked array) with the optical coupling coefficient controlled by varying the depth of etching of the mesa. Figure 1. Design of a partly phase-locked array with a shallow mesa and additional isolation. Profiled heterostructures are made by ion etching employing a neutralised collimated beam of argon ions of energy up to 1000 eV delivered through a photoresist mask. A reflecting multilayer coating with a reflection coefficient in excess of 95% is deposited on the rear facet of an LD and an antireflection (and also protective) coating with a reflection coefficient of about 10% is deposited on the front facet. Quantum Electronics 28 LD designs based on a partly phase-locked array can be used to form current-flow channels which are practically independent of fluctuations of the operating temperature and of the pump current [7]. This is illustrated in Fig. 2 which shows the patterns obtained in the near and far fields (in a plane parallel to the p-n junction) for an LD with a partly phase-locked array consisting of five stripe emitters (array period 8 urn). We can see that the near and far field patterns have a high temperature stability and depend weakly on the pump current driving the LD. Figure 2. Distribution of the output radiation in the near (a) and far (b) fields of a laser diode with a partly phase-locked array. In view of the fixed positions of the current-flow channels, the distribution of the optical power on a mirror in an LD with a partly phase-locked array is more uniform than in an LD with a wide stripe contact and this increases considerably the operating life. Fig. 3 gives the dependence of the output optical power of an LD with a partly phase-locked array on the duration of its operation at an optical power density on the mirror amounting to 10 mW per 1 pm of the emitting area width. An analysis of this dependence shows that the rate of fall of the optical output power is (0.6-1.0) x 10 % h and the expected operating life of this LD at a working temperature of 20 C is at least 10 000 h. Figure 3. Dependence of the optical output power P of a laser diode with a partly phase-locked array on the duration of operation. Investigations of the noise characteristics of these diodes showed that the optical noise measured in the frequency range from 30 Hz to 30 MHz does not exceed 0.5%, whereas in the case of diodes with a wide stripe contact the filament switching processes increase the noise to 5% - 10%. Model Power mW ATC-2220A ATC-2430 ATC-2440A ATC-2550 ATC-3690 200 500 1200 3000 25000 Operating regime CW CW CW CW QCW Efficiency Dimensions Pump current % 25 25 25 25 30 mkm 35 100 150 500 5000 mA x x x x x 1 1 1 1 1 400 1100 1890 4500 39000 Operating voltage V 1.8 1.8 2.0 2.0 2.2 Quantum Electronics 28 Table 1. Some characteristics of the LD's emission spectra. Type B is superior to type A with respect to its smaller FWHM. Figure 4. Dependencies of the output power on the drive current (watt -ampere characteristics) of a laser diode with a partly phase-locked array (model ATS-2550) operating continuously. The design based on partly phase-locked arrays is suitable for LDs with stripe emitters from just a few to several hundreds. Such a design was used to develop (and now to manufacture serially) several models of LDs (Table 1) with the emitting-area width 1 \xm, of d = 35-500 um length, and with an output optical power P = 200 mW- 3 W (a typical watt - ampere characteristic of the ATC-2550 model of this LD is given in Fig. 4). Linear arrays operating quasi-continuously (t ~ 200 m s) with an output power in excess of 25 W were also developed. These devices emit in the wavelength ranges 790 - 820 and 960-980 nm (moreover, the emission wavelength can be varied within the limits 5 nm by altering the operating temperature of the LD, which changes the wavelength at a rate of 0.3 nm K-1) and have an emission spectrum with a half-width less than 2 nm [8] (Fig. 5). Figure 5. Spectral dependence of the intensity of the output radiation from a laser diode with a partly phase-locked array (model ATC-2550). The 'Semiconductor Devices' Company developed, on the basis of LDs with partly phase-locked arrays and an output power of 1 and 3 W, a laser system consisting of LDs with a microlens and a feedback photodiode, an air-cooled radiator, collimating or focusing optics, and a programmed driver based on an I80C51GB microprocessor. Such a system permits monitoring and c6ntrol of the optical power, pump current, and temperature, and it also protects an LD from electric breakdown. The powerful LDs based on partly phase-locked arrays, used as optical pump sources for solid-state lasers, have a number of advantages compared with traditional wide-stripe LDs: the noise level is low, the temperature and temporal stability of the far and near radiation fields are high, and the operating life is long. In conclusion, we would like to thank the Russian Foundation for Technological Development and the Regional Foundation for Scientific and Technical Development of St Petersburg for constant interest and support. REFERENCES 1. Fan T Y, Byer RL IEEE J. Quantum Electron. 24 895 (1988) 2. Grempel H, Katsavets N I, Demidov D M, Ter-Martirosyan A L, Kopylov Ch V, Pfeifer E 1998 Materials of the Ninth Conference on Laser Optics (LO'98), St Petersburg, Quantum Electronics 28 3. Karpov S Yu, de la Cruz G, Myachin V E, Ostrovskiy A Yu, Pogorel'skiy Yu V, Rusanovich I Yu, Sokolov I A, Strugov N A, Ter-Martirosyan A L, Fokin G A, Chaly V P, Shkurko A P, Etinberg M I Pis'ma Zh. Tekh. Fiz. 17 (7) 31 (1991) [Sov. Tech. Phys. Lett. 17 248 (1991)] 4. Casey H C Jr, Panish M B Heterostructure Lasers Part B Materials and Operating Characteristics (New York: Academic Press, 1978) 5. Chow W W, Depatie D IEEE J. Quantum Electron. 24 1297 (1988) 6. Demidov D M, Ter-Martirosyan A L, Chaly V P, Shkurko A P "Semiconductor injection laser", Application for a Russian Patent No. 96108212/25 (013944) made on 24 April 1996; approved 20 November 1997 7. Chaly V P, Karpov S Yu, Ter-Martirosyan A L, Titov D V, Wang Zhang Guo Semicond. Sci. Technol. 11 372 (1996) 8. Demidov D M, Katsavets N I, Leus R V, Ter-Martirosyan A L, Chaly V P Pis'ma Zh. Tekh. Fiz. 23 (8) 90 (1997) [Tech. Phys. Lett. 23 331 (1997)] http://www.atcsd.neva.ru/Images/patent-61k.JPG Requirements on pump-diodes for DPSSLs Requirements on pump-diodes for DPSSLs Hermann Grempelb, Nikolay I. Katsavetsa, Alexander L. Ter-Martirosyana, Christoph v. Kopylowb, Egon Pfeiferb aATC - Semiconductor Devices, P.O. Box 29, St. Petersburg, 194156 Russia bBremLas Lasertechnik Bremen GmbH, Fahrenheitstrasse 1, D-28359 Bremen, Germany ABSTRACT We report on the influence of the different specifications of a single emitter laser diode (type A) and a laser diode (LD) of the partially phase locked type (type B), on some characteristics of our diode pumped solid state lasers (DPSSL). We find that the use of the type B LD is preferable to that of type A with respect to smaller M2 of the DPSSL-beam, superior noise behavior, and smaller full width at half maximum (FWHM) of the LD emission. Keywords: DPSSL, LD, beam quality, M2, intra cavity frequency doubling INTRODUCTION In the recent years, diode pumped solid state lasers (DPSSL) have gained an important role in the laser market. This is because of the unique advantages that DPSSLs offer compared to e.g. gas lasers. In the fields where DPSSLs are applied, the demands on the performance of the lasers are quite high. Life time of the DPSSL should be well above 10,000 hours, the beam should be Gaussian-shaped with an M2 smaller than 1.2, and noise has to be lower than 1 %. Besides the construction of the cavity and the elements building the cavity, the characteristics of the pumping diode has a significant influence on the performance of the DPSSL. DESCRIPTION OF THE LASER SYSTEM The DPSSL under consideration is an end-pumped intra cavity frequency doubled micro chip laser. The radiation of the LD is focused into the laser crystal by pump optics. The cavity consists of a Nd:LSB laser crystal and a KTP-crystal for frequency doubling. The mirrors of the cavity are built by dielectric layers on the outer side of the LSB- and KTP-crystal, which are high reflective for the fundamental wavelength at 1064 nm. To couple out the second harmonic, the dielectric layer at the outer side of the KTP-crystal is high-transmittive at 532 nm. Some characteristics of the LDs are shown in Table 1. Type A Type B 200 m m x 1 m m 150 m m x 1 m m optical output power 1W 1W expected life time > 10,000 h > 10,000 h type single emitter partially phase-locked laser array emitting surface Table 1. Characteristics of LDs of type A and type B DESIRED AND ACTUAL CHARACTERISTICS OF THE LDs AND THEIR INFLUENCE ON THE PERFORMANCE OF THE DPSSL Spectral characteristics of the LDs Requirements on pump-diodes for DPSSLs To pump the laser crystal effectively, the center wavelength of the emission spectrum of the LDs should coincide with the absorption maximum of Nd:LSB at 808 nm. The FWHM of emission spectrum should be smaller than the FWHM of the Nd:LSB-crystal, which is 3 nm. In Table 2, some of the emission characteristics of the LDs are shown. The emission spectra of about 40 pieces of each LD-type have been taken into account. Type A Type B average deviation of the center wavelength of emission from 808 nm, LD temperature: 20 C +/- 0.14 nm +/- 0.53 nm average FWHM (2.50 +/- 0.81) nm (1.49 +/- 0.62) nm relative number of LDs with FWHM > 3nm 20.93 % 0% Table 2. Some characteristics of the LD's emission spectra. Type B is superior to type A with respect to its smaller FWHM. From Table 2 it can be seen, that the average deviation of the center wavelength of the LD emission from the desired center wavelength at 808 nm is bigger for type B than for type A. In any case, it has been possible to tune the center wavelength of the diodes to 808 nm by adjusting the their temperature between 15 C and 35 C. With respect to their smaller FWHM, the type B LDs are superior to the type A LDs. The influence of the LD-type on the DPSSL beam quality To achieve a Gaussian beam-shape, the pump-volume should lie within the volume of the TEM - cavity mode. The better 00 this requirement is fulfilled, the closer will the value of M2 be to 1. In Table 3, the average M2 of the beam of the DPSSL is evaluated for DPSSLs pumped by type A and type B laser diodes. M2 of the DPSSL-beam Type A Type B 1.36 +/- 0.29 1.24 +/- 0.13 Table 3. Average M2-value of the DPSSL-beam for DPSSLs pumped by type A of by type B laser diodes. Type B is superior to type A because smaller M2-values can be achieved. For pumping with type B LDs, the average value of M2 is lower. We ascribe this to the smaller emitting area of the type B LDs. Furthermore, if we tried to achieve an M2-value smaller 1.2 for an DPSSL pumped by a LD of type A, this was only possible if the pump-beam impigned near the edge of the laser crystal. We presume that part of the pump beam is cut by the holder in this case and the pumping volume is reduced in that way. Usually, the quality if the crystal and the layer is reduced near the edge of the crystal. Therefore, in the manufacturing process, it takes a lot of time, to find an area with acceptable quality of layers and crystal. Moreover, these areas are usually rather small. In consequence, just very small disalignment, e.g. induced by thermal expansion, may be enough to enhance the M2-value or to reduce the output power of the DPSSL. Therefore, we expect the DPSSLs pumped by type B LDs to show superior stability. Comparison of the noise behavior of type A and type B LDs For many applications, the output noise of the DPSSL has to be lower than 1 %. In the kind of DPSSL laser considered here, one of the main contributions to noise arises from mode competition. It is therefore desirable, to minimize all additional contributions to noise. Because of this reason, we examined the noise behavior of type A and type B LDs. While scanning temperature and pumping current of the LDs, the noise has been measured. In the case of type A LDs, broad areas with noise up to 6 % were detected. In the case of type B LDs, the noise has been smaller than 0.5 % nearly in the whole scanning region. SUMMARY We compared some characteristics of a single emitter LD to that of a partially-phase locked laser array. The partially-phase locked laser array LD showed a smaller FWHM of its emission spectrum and lower amount of noise in its optical output power. If we pumped our DPSSLs by the partially-phase locked laser array LD, the average value of M2 of the DPSSL-beam was closer to 1, compared to the case that we used the single emitter LD-type as a pumping source. In conclusion, we prefer the partially-phase locked laser array for the production of our DPSSLs. ACKNOWLEDGMENTS Requirements on pump-diodes for DPSSLs BremLas would like to thank ATC - Semiconductor Devices for providing the type B LDs. ATC-SD Frequently Asked Questions Frequently Asked Questions PRODUCTS What laser diodes do you offer? How can you confirm quality of your laser diodes? What is a lifetime of your laser diodes? How do you test LDs for the lifetime? Is it possible to vary the output power of the working laser diode? What is the type of LDD-10 output connector? What thermistor should be used while working with LDD-10? What is a microlens? What does it do? Are your microlens and feedback photodiode removable? Can you make a customized product matching my specific need? What are your terms of delivery? SEMICONDUCTOR TECHNOLOGY Why has ATC-SD opted for MBE for Group III nitride growth, when Japanese and US companies have gone for MOVPE? Why is ATC-SD's approach to MBE (use of ammonia source) better and is anyone else doing this? GENERAL What is ATC-SD's main asset that set it apart from other Russian and international competitors? What is ATC-SD's strategy for competing in an international market? PRODUCTS What laser diodes do you offer? We manufacture multi-mode laser diodes with CW output optical power of 100 mW - ATC-SD Frequently Asked Questions 3 W, having emission wavelength of 780 - 820 nm or 960.- 980 nm. For details see ATC-SD laser diodes. How can you confirm high quality of your laser diodes? ATC-SD's laser diodes are certified by Rosstandard - the highest Russian certifiaction authority. Our laser diodes were captiously tested by many domestic and foreign companies, confirming high quality of our products. One of our frequent customers recently presented a report on the LO'98 SPIE conference. What is a lifetime of your laser diodes? Specifying the lifetime of our laser diodes as 10,000 hours, we define it as a time period when the output power of a diode decreases by 20% under conditions of constant pumping current (noted as an operating current in the certificate of each LD) and working temperature of +20 C. To determine the expected lifetime of our laser diodes, we carry out three types of testing: a. Accelerated test method under high temperature conditions (+50 C) using the acceleration coefficients. b. Testing under normal (20 C) conditions for a limited period of time with linear extrapolation. c. Real time (10,000 hours) testing of limited amount of LDs. This method experimentally affirms the value of the acceleration coefficient used in method (a) and competence of usage linear extrapolation in method (b). How do you test LDs for the lifetime? Each and every laser diode manufactured by ATC-SD is being tested under normal (20 C) operating conditions for 500 hours. Then the diodes that show expected decrease in output power of more than 20% at 10,000 hours point (see our definition of the lifetime above) are rejected, while the others (expected decrease in output power less than 20% for 10,000 hours) are being placed to stock. Is it possible to vary the output power of the working laser diode? You certainly can vary the laser output power by changing the driving current. This can be done by manual rotating of the corresponding knob or typing the current value on the keyboard of the LDD-9A driver, simultaneously observing the current or/and output power on two numeric displays of the driver. The dependence of the output power from the current is linear. See typical graphs. What is the type of LDD-10 output connector? LDD-10 has a 1 meter cable as an output, which terminates with RS-19 connector, which fits the ATC cooling heads. We will provide you with contacts map of the connector, if necessary. Besides, we may complete your order of the driver with the complementary part of the connector for free. What thermistor should be used while working with LDD-10? Our drivers are designed to use thermistor of 10 kOhm+-5% at 25 C as a standard temperature sensor. However, it may be easily re-configured by the user ATC-SD Frequently Asked Questions (instructions in the Manual) for different Peltier thermocoolers and thermistors. If you can point parameters of TEC and thermistor used by you, we may configure the driver by ourselves before shipping to you. What is a microlens? What does it do? The laser diode without microlens has a beam divergence of about 40 x 10 degrees at FWHM level. The microlens is an anti-reflection-coated cylinder, which is being mounted after the front mirror of the laser diode. It gives reduction of the beam divergence to 2 x 10 degrees. Are your microlens and feedback photodiode removable? Microlens and feedback photodiode are mounted on the open heat-sink together with soldered laser chip, and this joint construction is pressurized into TO-3 or ATC case. Thus they are NOT removable. Additional collimating or focusing optics is placed onto the TO-3 or ATC case from outside and may be removed easily. Can you make a customized product matching my specific need? We always try to make advances towards our clients needs. Usually we can change technical parameters of our products to some extent, develop and manufacture some additional focusing or collimating optics according to your requirements, and so on. If you failed to find standard production fitting your task, please describe in details your application, wavelength and wavelength tolerance required, power, beam characteristics, etc. The more information you give, the more likely we can help you. What are your terms of delivery? After your placing an order, we send you an invoice by e-mail or fax, and you make cash in advance payment onto our bank account. The prices indicated in our price-lists are ex-works (EXW). That is the price if one takes the goods at our premises in St.Petersburg, Russia. To be let out across the Russian border legally, the customs procedures should be executed. This cost about USD 100. At this step delivery conditions are called FCA. If you want the goods to be delivered to Your City, the delivery conditions are called CIF Your City.We use UPS as reliable company which operates properly on Russian territory and with Russian customs. Others may work not so well (tested experimentally!). You may read more about EXW, FCA, CIF and other Incoterms here. So, UPS delivers the devices CIF Your City. Their service cost about USD 50 -150 (for usual weights and destinations of our shipments). After that you should contact your local custom authorities to get to know what procedures and payments is necessary (if any) to actually get the goods. We send standard devices within one month after receiving the money. Actual time usually is less, depending on availability of devices at our stock. SEMICONDUCTOR TECHNOLOGY Why has ATC-SD opted for MBE for Group III nitride growth, when Japanese and US ATC-SD Frequently Asked Questions companies have gone for MOVPE? We realize that MOCVD technology currently have better results in GaN technology. To our opinion, it has happened due to wrong direction originally chosen by MBE researchers, and that both ways will finally lead to very close results. In our research we prefer MBE since this technology traditionally possesses better research methodology at the very stage of the growth process. MBE technological process has higher variability which fastens the development of technologies and allows to bypass patent restrictions of MOCVD technology area. We may have more variations of our technologies and thus serve the market needs better. Besides that, MBE process is ecologically much more friendly than MOCVD. Why is ATC-SD's approach to MBE (use of ammonia source) better and is anyone else doing this? We prefer ammonia to plasma as nitrogen source since it allows to perform faster growth. Besides that, using plasma one usually faces certain difficulties with InGaN layer growth. Finally, atomic nitrogen from plasma source is contaminated with ion component. And as far as we know, leading MBE researches have switched to ammonia during last 1.5 years, and most advanced MBE results are achieved using just ammonia sources. GENERAL What is ATC-SD's main asset that sets it apart from other Russian and international competitors? The most important is our own unique design of the laser chip - "partially phase-locked array". This design ensures superiority of some important parameters of our diodes' performance. On the Russian market our LDs are the most powerful among the domestic manufacturers and the cheapest among all high power LDs available. Our equipment looks very attractive on criteria of good quality at most affordable price. We always use customized approach to satisfy our clients' needs. What is ATC-SD's strategy for competing in an international market? We perform full cycle at our facilities - from fundamental research through manufacturing to sales, having tight collaboration on all stages. This helps us to stay on the front edge of the laser market. We make complex final product - equipment together with the modern technologies, laser systems and devices together with operating methods - to solve our customers' problems. We try to do our best to satisfy needs of new product developers with our wares, so that they choose us as suppliers when turning to serial production. ATC-SD Frequently Asked Questions Home | About | Know-How | Products | Equipment | Medicine | Events | FAQ | Contact LDD-10 laser diode driver Laser diode driver and temperature controller LDD-10 The LDD-10 Laser Diode Driver is a general purpose power supply driver and temperature controller for high power laser diodes up to 5 W CW. Designed specifically for safe and fault-free operation of laser diodes, the LDD-10 includes diode protective circuits, a feedback photodiode circuit, overcurrent limit, and full TE cooler control. The driver provides a digital display of four key operating functions. What thermistor should be used while working with LDD-10? The I80C516B microprocessor serves as a central processing unit of the driver. The built-in pulse generator supports the driver operation both in continuous and pulse modes. What is the type of LDD-10 output connector? LDD-10 is intended for driving the laser diodes packed into the TO-3 case and mounted on the cooling head ATC-02H, as well as packed into the ATC case and mounted on the cooling head ATC-03H. Basic features Power supply for laser diode in continuous wave and pulse modes Stabilization and visual check of the laser diode operating current with the possibility to control and limit it Protection against electrical damage and overheating Stabilization and control of laser diode temperature Control of the optical power using monitor photodiode Storage of total driver working time New features of this model Rough and precise modes of parameter adjustment External modulation with TTL-level signal LDD-10 laser diode driver Connection with remote computer via RS-232 interface Main technical data Version LD current LD current setting accuracy LD current noise and pulsation level Maximum electrical voltage on LD Long-term instability of LD current LD current pulse width LD current pulse repetition period External TTL modulation frequency LDD-10A LDD-10 0.1 - 6.0 A 0.1 - 8.0 A 0.001 A Not more than 1 % 2.4 V Not more than 1 % 0.001 - 9.998 seconds 0.001 - 9.998 seconds up to 50 kHz +5iN...+ 50iN Heat-sink temperature setting range Heat-sink temperature setting accuracy Accuracy of temperature retention Maximum electrical voltage on Peltier TEC Maximum current through Peltier TEC RS-232 support with basic monitor commands Special software for external PC (Windows) LD voltage measurement feature Case Not less than 0.1iN Not less than 0.5iN Not less than 4.6V Not less than 8.0A Yes Yes No Yes No Yes Improved (photo above) Vario Modul iS by Rittal Standard Operating temperature range Network power supply Network power consumption Size Weight Home | About | Know-How | +10 - +40 iN 220VAC/50Hz (standard) or 110VAC/60Hz (upon request) Not more than 100VA 236 x 105 x 300 mm 3.3 kg Products | Equipment | News | FAQ | Contact Laser diodes Linear arrays Cooling heads Focusing optics Drivers Atcus-15 DPSSLs LDD-10 laser diode driver ATC-SD vacuum equipment EQUIPMENT There is equipment and Equipment. We offer you Equipment which is fully adapted for real A3 B5 technologies. Molecular beam epitaxy ATC-EP3 machine Chemical-molecular beam epitaxy system ATC-EPN2 High vacuum quadrupole mass spectrometer QMS-1 Multi-purpose ultra high vacuum system UHVS-4 High-temperature vacuum furnace VF-1 Universal vacuum station SD-40 (T, M, E, G) Home | About | Know-How | Products | Equipment | Medicine | Events | FAQ | Contact ATC-EP3 molecular beam epitaxy machine Molecular beam epitaxy ATC-EP3 machine ATC-EP3 is a MBE system specially designed for III-V epilayer growth. It was initially made in main scheme close to ISA RIBER's MBE systems, and then modified by ATC-SD to increase it's components characteristics and reliability to obtain high quality material growth. Details ATC-EP3 MBE system configuration allows to accept all types of solid sources and substrates mounted by indium-soldered or indium free holder. ATC-SD uses ATC-EP3 in a wide range of research works and in producing of powerful AlGaAs/GaAs SQW Laser Diodes (808 nm, 4 W CW). Application area - epitaxial growth of wafers for: Near infrared light emitting devices - Laser Diodes and LED's based on III-V solid solutions (AlGaAs, AlGaInAs, etc.) Sb-containing far-infrared light emitting devices (InSb, InGaAsSb) High speed HEMT's, bipolar transistors, photodetectors and other microwave semiconductor devices MQW structures Wide range of scientific works: surface investigation, quantum size effect research, growing of quantum wires, dots, etc. Devices based on A2 B6 materials (CdTe, ZnSe, etc) also available System characteristics Ion and Ti-sublimation pumping; residual pressure 1x10-10 Torr Liquid nitrogen cooled cryopanels Eight effusion cells with PBN crucibles and water cooled shroud PID control by W-Re thermocouple 40 mm molyblock for substrates Sample rotation Substrate heating up to 800 0C Accurate thickness control by pneumatic activated shutters In situ surface monitoring by RHEED Residual atmosphere control by Quadrupole MS Easy Load-Lock/Substrate Transfer System RHEED data acquisition system Shutter operation computer control ATC-EP3 molecular beam epitaxy machine Possibility of connection of two ATC-EP3 in one technological line by transfer chamber Customer support System installation and basic technological education according to several variants Warranty and postwarranty service Technical and technological consultation Expansion of the system by full computer control system, including software for growth process programming, controlling and displaying Adaptation of customer's epitaxial technology to ATC-EP3 MBE system Design and fabrication of ultra-high vacuum units according to customer needs Technical data Maximum operating temperature of the effusive cell of molecular sources, no less than Instability of the temperature of the molecular sources' cell Diameter of substrate, no more than Maximum temperature of the sample heating in the film growing chamber, no less than Range of the operating velocities of continuous rotation of the sample Pressure of residual gases after the MBE machine bakeout and cryopanels are filled with the liquid nitrogen, Pa (Torr), no more than Speed of operation of the molecular source's shutter, no more than Possibility to heat the analytical part up to the temperature of 200 C The system of blocking and setup protection provides the disconnection of power supply at the increase of the residual gases pressure in the vacuum system, up to in operating mode Consumed power supply, no more than in the heating mode Mass of the setup, no more than Average service life of equipment, no less than Home | About | Know-How | Products | 1250 C 0.5 C/hour 40 mm 800 C 0...50 min-1 1.3x10-8 (1.0x10-10) 300 ms guaranteed 5.0x10-3 Pa (3.8x10-5 Torr) 10 kVA 25 kVA 2500 kg 10 years Equipment | News | FAQ | Contact EP3 MBE machine EPN2 CMBE for GaN QMS-1 mass spectrometer UHVS-4 system VF-1 furnace SD-40 vacuum station ATC-EP3 molecular beam epitaxy machine ATC-EP3 description ATC-EP3 technical description ATC-EP3 MBE system in minimal configuration consists of growth chamber, buffer-transport chamber and load-lock each with separate pumping. The growth chamber contains eight effusion cell assembly, a substrate manipulator with heating and rotation systems, monitoring facilities and some observation windows. The whole chamber and growth zone are equipped by two cryopanels with circulating of liquid nitrogen. The pumping system includes two 400 l/s ion pumps and liquid nitrogen cooled Ti-sublimation pump. The liquid nitrogen consumption of the whole ATC-EP3 system is less then 20 l/hour. Evaporation cell assembly is situated on a 400 mm flange with individually mounted flanges for up to 8 effusion cells, 8 tantalum shutters, 4 liquid nitrogen feedthroughs and pyrometric window with protection shutter. The cells are radially placed and oriented to the substrate surface to ensure high fluxes uniformity. Each effusion cell has a separate water cooling shroud. The cells are made of high purity refractory materials and pyrolitic boron nitride (pBN) in hot zones. Each cell consist of a 6-layer tantalum shields, large area foil heater providing fine temperature stability, W-5%Re/W-20%Re thermocouple and conical form crucible. Tantalum cell shutters are pneumatically activated with shutter control unit and can be activated either manually or by computer. Substrate heating module is mounted on an individual flange. It is designed to provide high temperature uniformity over the substrate. The heater is at adjustable stationary position and heats the back side of the rotating substrate holder mounted on the wafer manipulator. Only high purity refractory materials and pBN are used in the construction of a heater assembly. Temperature feedback from W-Re thermocouple allows to maintain temperature during epitaxial process. Maximal operative temperature is 800oC with stability 0.5 oC. Wafer manipulator allows to rotate the substrate without increasing of its contamination by the motor drive or manually and has three degrees of freedom for wafer moving. Substrate holder is made of high purity molybdenum and fixed on the manipulator by bayonet fitting. Substrate holder may be designed to In-soldering as well as In-free mounting. Monitoring facilities include Reflection High Energy Electron Diffraction (up to 20 keV, X-Y electrostatic scan facility) and Quadrupole mass-spectrometer (0? 300 amu). They allow to calibrate molecular beams, to control the epitaxial growth process and analyze residual gas pressure. The pirometer system is also available. The buffer-transport chamber is separated from the growth one and load-lock by the same gate valves and is pumped by 160 l/s ion pump. It can be supported by a liquid nitrogen cooled Ti-sublimation pump. This chamber allows to accumulate up to nine wafers. A mechanically coupled transfer mechanism with ergonomically well positioned observation windows makes easy the loading of the wafer holder and carries it in any direction straightforward. Load-lock has a speed door, cassette for 3 holders, and individual pumping. Video RHEED data acquisition system is developed for RHEED- pattern writing and digital processing in real time scale. It allows to registrate temporal oscillations of RHEED-pattern intensity over the chosen area and to define the period of oscillations (epitaxial layer growth ATC-EP3 description rate). Video RHEED date acquisition system consists of CCD video-camera, analog-digital interface and IBM PC computer. This system can by supplied separately and may be adapted to other MBE setups. About ATC-SD - developer and manufacturer of high power laser diodes ABOUT ATC-SD ATC - Semiconductor Devices was founded in 1992. Its staff consists of highly qualified specialists in fundamental and applied solid-state physics, semiconductor physics and semiconductor technology. They have huge experience of research work in the Soviet and Russian Academy of Science institutions, such as Ioffe physical-technical institute and Politechnical institute in Saint-Petersburg. Now the firm tightly collaborates with well-known Radioelectronic institute (Moscow) and Vavilov State Optical institute (Saint-Petersburg). Working within the Saint-Petersburg Regional Foundation for Scientific and Technological Development, ATC-SD participates in Russian and European grant projects. Nowadays ATC-SD is the leader in developing high power laser diode technology in Russia. ATC-SD does not set the goal to become a large manufacturer of optoelectronics components. It develops new technologies in the field of high power laser diodes and transfers them with full set of necessary equipment. Products and Technologies Technologies developed by ATC-SD are suitable for manufacturing all three basic elements of optoelectronics - laser diodes, photodiodes and light-emitting diodes. ATC-SD carries on intensive research in this field, including very promising GaN technology for blue-green light emitting diodes and laser diodes. First stage of the technological process is growing of thin layers of different semiconductor materials. ATC-SD uses the Molecular Beam Epitaxy (MBE) technology for that purpose. During the second, so called post-growing stage of the technological process, the grown laser heterostructures are being additionally processed on a special equipment, and at the end the fully finished products are created. ATC-SD is among the few in Russia which use MBE technology to grow the laser heterostructures. ATC-SD has own production facilities, and performs a full-cycle low-scale production of several market products using MBE-technology: (laser diodes with output power up to 4 Watts, laser arrays and others). Capacity is enough to satisfy all Russian producers of devices based on high power laser diodes. Being supplied to many Russian and Western companies, all the products were independently tested, and the results show high reliability of the devices and their fitting to the highest modern standards. Technology transfer ATC-SD has successful experience not only in R&D and manufacturing, but in transfer of its technology to the South-East Asia. About ATC-SD - developer and manufacturer of high power laser diodes Oriental scientists express intent interest to research work being held in ATC-SD. In 1994 scientists of ATC-SD provided training programme at the Semiconductor Institute of the Chinese Academy of Science. Joint research was carried out in the field of laser heterostructures manufacturing. Within the framework of the program of scientific and technological co-operation (1995-1997) two MBE-machines, post-growing equipment and related technologies for high power laser diodes manufacturing were transferred to one of Optoelectronic Research Institutes of China. Necessary training was provided to the Chinese personnel. Home | About | Know-How | Products | Equipment | Medicine | Events | FAQ | Contact High power laser diodes and devices made on their base offered by ATC-SD PRODUCTS We offer products manufactured using ATC-SD original technology Our devices demonstrate characteristics at the top level of this technology You can buy them, or make them yourself using our technology High power semiconductor laser diodes Laser linear arrays Cooling heads Focusing optics Laser Diode Driver LDD-10 Atcus-15 medical device Diode pumped solid-state lasers Is ATC-SD capable of making a customized product? What are the terms of delivery? Home | About | Know-How | Products | Equipment | Medicine | Events | FAQ | Contact Laser linear arrays of 25-100W QCW Laser linear arrays 25 and 40 Watts QCW Laser Linear Arrays ATC-Semiconductor Devices offers laser linear arrays operating in Quasi-Continuous Mode. Nominal duty factor is 1/100, pulse width is 200 mksec. The devices are manufactured using our special chip design Partially Phase-Locked Array. Model ATC-Q25-5 has output optical power of 25W QCW, model ATC-Q40-5 has 40W QCW. These arrays may be supplied on the open heat-sink, as well as packaged into ATC case. The open-heat-sink type of package (see drawing to the right) is most suitable for lateral pumping of solid-state lasers. Since the emitting area of the arrays occupies more than 70% of the total heat-sink width (5 mm and 7 mm respectively), this package allows to obtain high uniformity of the energy distribution lengthwise the pumped crystal. Laser linear arrays of 25-100W QCW Laser arrays ATC-Q25-5 and ATC-Q40-5 may also be supplied packed into ATC case, and then placed onto the ATC-03H cooling head (see photos to the left). ATC-03H cooling head has built-in Peltier thermocooler, thermistor and mini-fan (on the bottom). Dimensions of ATC-03H are 92 x 75 x 90 mm. Specifications 100 Watts QCW Laser Linear Arrays Laser linear arrays of 25-100W QCW Using technologies developed by ATC Semiconductor Devices, our researches have developed laser arrays which have emitting dimensions of 9,600x1 mkm and 100 Watts output optical power in quasi-constant wave mode. Now these arrays model ATC-Q100-10 are commercially available. They may be supplied on the open-heat sink. Home | About | Know-How | Products | Equipment | News | FAQ | Contact Laser diodes Linear arrays Cooling heads Focusing optics Drivers Atcus-15 DPSSLs ATC-SD cooling heads for laser diodes Cooling heads ATC-SD laser diodes in CW operation mode or pulsed one with pulse duty factor more than 0,3% and pulse duration more than 500 ms require additional cooling. Three types of cooling heads are offered. The first one - ATC-01H serves for temperature stabilization under long-term laser operation packed in TO-3 case. The compact head is specially designed for LDs with CW output power up to 100 mW. The head may contain a coaxial connector for pulse operation. Left to right: 02H, 03H, 01H The second model - ATC-02H is used with laser diodes with CW output power from 100 to 1500 mW, packed into TO-3 case which has built-in Peltier thermocooler. ATC-02H has slide-contacts connector for standard TO-3 cases, which allows to replace the laser diodes easily. The third laser head - ATC-03H has incorporated Peltier thermocooler with higher efficiency and is being used with laser diodes packed into ATC case. Besides that, ATC-03H is equipped with mini-fan as a forced cooling system. As a result, this head ensures safe use of laser diodes with CW output optical power of 3 Watt and more. ATC-02H and ATC-03H may be completed with additional optics (collimating or focusing). All the heads are simple in use, portable, reliable, and ideal for the long-term operation with the ATC laser diodes. ATC laser heads specifications Parameters Dimensions, mm Weight, g Connector type Package types ATC-01H 25 x 50 50 wires ATC ATC-02H ATC-03H 95 x 75 x 63 95 x 75 x 90 460 750 RS type TO-3 ATC On the drawings below dimensions are given in millimeters, tolerances are 0.25 mm. ATC-SD cooling heads for laser diodes Home | About | Know-How | Products | Equipment | News | FAQ | Contact Laser diodes Linear arrays Cooling heads Focusing optics Drivers Atcus-15 DPSSLs ATC-SD cooling heads for laser diodes Focusing optics Focusing optics Model ATC-5022 ATC-5032 38 mm 63 mm 27 mm 30 mm General view Mounted onto the cooling head Length Dimensions Diameter Optical scheme Click for technical drawings Spot characteristics Distance from the ouput aperture Part of optical power which gets into the spot Emitting source 20 mm 7 mm 90 % 80 % Focusing optics Laser diode model Spot size Output Emitting power dimensions ATC-C1000-150 1 W 150 x 1 mkm 200 x 200 mkm 60 x 60 mkm ATC-C3000-500 3 W 500 x 1 mkm 600 x 600 mkm 200 x 200 mkm Home | About | Know-How | Products Laser diodes Linear arrays Cooling heads Focusing optics Drivers Atcus-15 DPSSLs | Equipment | News | FAQ | Contact Focusing optics drawings Focusing optics ATC-5022 and ATC-5032 Focusing optics drawings Please use BACK button of your browser to leave this screen Specifications of ATC-SD high power laser diodes Specifications (Typical values for 790...820 nm @ +25C and 0,75 NA collection optics) CW Laser Diodes Model ATC-C50-35 ATC-C100-35 ATC-C200-35 ATC-C300-35 ATC-C500-35 ATC-C1000-100 ATC-C1000-150 ATC-C1200-150 ATC-C2000-200 ATC-C3000-500 ATC-C4000-500 CW Differential Total Emitting Threshold Operating Operating Oper. Oper. Quantum Conversion Dimensions Current Current, Current, Voltage Output Efficiency Efficiency WxH typical no more Power than mW mW/mA % um mA mA mA V 50 1.1 25 35x1 100 160 190 1.7 100 1.1 30 35x1 100 210 280 1.7 200 1.1 35 35x1 100 320 440 1.8 300 1.1 40 35x1 100 430 650 1.8 500 1.1 45 35x1 100 650 900 1.8 1000 1.05 40 100x1 250 1300 1500 2.0 1000 1.05 40 150x1 400 1450 1890 2.0 1200 1.05 45 150x1 400 1650 2190 2.0 2000 1.0 40 200x1 500 2500 3000 2.0 3000 1.0 40 500x1 1100 4100 5000 2.0 4000 1.0 45 500x1 1100 5100 6200 2.0 QCW Laser Linear Arrays QCW Differential Total Emitting Threshold Operating Operating Oper. Output Quantum Conversion Dimensions Current Current, Current, Voltage Power Efficiency Efficiency WxH typical no more Model (f<50Hz, than t<200us) W mW/mA % um A A A V ATC-Q25-5 25 1.0 35 5000x1 8 32 39 2.0 ATC-Q40-6 40 1.0 40 6000x1 8 48 55 2.0 ATC-Q60-11 60 1.0 35 11000x1 20 80 90 2.0 ATC-Q100-11 100 1.0 35 11000x1 20 115 130 2.0 Is it possible to vary the output power of the working laser diode? Atcus 15 - medical laser device Atcus-15 - applications High power laser device for medicine and technological ATC-SD offers Atcus-15 - laser medical device. It delivers near-infrared energy via a 600 mkm optical fiber. Atcus-15 works in CW and pulsed modes. Output power in continuous mode is up to 15W. E-mail us to get PDF manual. Main technical data Emitting wavelength (810 10) nm Output power User-adjustable from 100 mW to 15 W CW Generation modes CW or pulse Beam characteristic Semiconductor, multimode Pulse duration 0.05 - 10 sec Duty factor 1/2 - 1/99 Exposure 1 sec - 30 min Delivery optical fiber diameter 600 mm Weight 15 kg max Dimensions 170 x 500 x 370 mm Input power 220/110 VAC, 50/60 Hz Cooling requirements No external air or water cooling required, internal thermoelectric cooling Atcus 15 - medical laser device Typical operating temperature Home | About | Know-How | 10 0C to 30 0C Products Laser diodes Linear arrays Cooling heads Focusing optics Drivers Atcus-15 DPSSLs | Equipment | News | FAQ |Contact Diode pumped solid-state lasers offered by ATC-SD Diode pumped solid-state lasers CW green (532 nm) Nd:YAG + KTP We manufacture diode pumped solid-state lasers with intracavity frequency doubling. We use own laser diodes as the pumping source for these DPSSLs, which ensures the most cost effective and reliable solutions. Lasers are air-cooled and have a built-in system of thermostabilization, based on Peltier thermo-electric coolers. The laser diode driver LDD-9 or LDD-10, equipped with additional thermo-stabilization circuits, serves as a power supply and control unit for the whole system. DPSSLs are designed for easy installation and are ready for immediate operation. Main technical data Wavelength CW output power Mode Beam diameter Beam divergence Beam positioning stability Polarization Power stability (in 1 hour) Noise (1 mHz) Working temperature range Network power supply Emitting head dimensions weight Driver and control block dimensions weight 532 nm up to 250 mW Single TEMoo 1.5 mm 1 mrad 0.1 mrad linear 100:1 +5% <30% +10C...+40C 220VAC/50Hz 80 x 90 x 140 mm 0.6 kg 236 x 105 x 300 mm 3.3 kg Diode pumped solid-state lasers offered by ATC-SD Home | About | Know-How | Products | Equipment | News | FAQ | Contact Laser diodes Linear arrays Cooling heads Focusing optics Drivers Atcus-15 DPSSLs EPN-1 CMBE machine Chemical-molecular beam epitaxy system ATC-EPN1 ATC-SD performs R&D on GaN technology using this machine. Its main specific features are: maximum simplicity of design and exploitation special design for group-III nitrides growing wide variability of the growth conditions necessary for scientific investigations at using of new materials. Material system - InGaAlN. Better variability of the growth conditions as compared to traditional MBE systems is provided by allowable work with wide pressure diapason of the gaseous sources and high growth temperatures. In particular, growth of group-III nitrides can be carried out with the V/III ratio from 1 to 1000 at substrate temperature up to 900-1000iC (see related article The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia). Base configuration: pumping system growth arrangement two W-Re thermocouplers substrate temperature control gauges for high-vacuum and forevacuum pressures liquid nitrogen supply system power supply and control blocks racks Option: quadrupole mass-spectrometer. Technical data 3-stage: turbomolecular pump/diffusion pump/forevacuum pump. The diffusion pump is needed at maximal NH3 flux, since the diffusion pump increases efficiency of pumping H2, which comes from NH3 disintegration. ion pump (for standby stage) two LN criopanels background pressure at the sources switched off 1.10-9 Torr Pumping systems EPN-1 CMBE machine Growth arrangement sample holder diameter - 40 mm maximum substrate temperature - 950 oC (substrate temperature up to 1050 oC is available by special order) 5 effusion cells, BN crucibles, maximum temperature - 1250 oC 2 entries for gas sources (up to 5 entries are available by special order); system for gas component supply adopted for hydrogen containing species (in the case of NH3 the system provides ammonia flux near the substrate from 1015 cm-2c-1 to 1018 cm-2c-1) pyrometric window laser interferometer control system Home | About | Know-How | Products | Equipment | News | FAQ | Contact EP3 MBE machine EPN1 CMBE for GaN QMS-1 mass spectrometer UHVS-4 system VF-1 furnace SD-40 vacuum station QMS-1 quadrupole mass spectrometer High vacuum quadrupole mass spectrometer QMS-1 Outstanding possibility for analysis of gas substances, volatile liquid substances and molecular beams being used in the customer's vacuum equipment. Application - Mass-spectrum analysis in R&D investigation in the following fields: surface science, solid state physics, molecular beam monitoring, residual atmosphere control, chemistry, biology, biochemistry, ecology. Features High sensitivity, mass range up to 500 AMU, high resolution, UHV design, Mo-Re alloy made electrodes block, visual and on-tape mass-spectrum registration, simple operation, connection to any vacuum system through appropriate transition unit. Standard configuration includes mass-analyzer unit and control rack. Computer control and registration system with special software may be delivered optionally. Technical data * in 1.5 MHz mode in 1.2 MHz mode Working pressure in customer's vacuum chamber 1...400 AMU 2...500 AMU Analyzing mass range Resolution on 10% peak amplitude, no less than < 1x10-7 Torr R=M* in all mass range R=3M* near mass unit 28 Sensitivity of nitrogen with resolution 28, working frequency 1.5 MHz and scanning time for one peak 10 sec in Faraday cylinder mode 1x10-11...3x10-9 A Ion currents registration range in VEU -2A multiplier mode 1x10-17...5x10-12 A in VEU-6 multiplier mode 2x10-18...2x10-15 A Scanning time Backout temperature, no more than Sizes: mass-analyzer unit full length 520 mm, in vacuum length 350 mm, DU 125 flange mounting control rack 3x10-4 A/Torr 10-2...104 sec 300 C 700 x 600 x 2000 mm - here M is AMU value in the mass unit scale in the point of resolution control QMS-1 quadrupole mass spectrometer Home | About | Know-How | Products | Equipment | News | FAQ | Contact EP3 MBE machine EPN2 CMBE for GaN QMS-1 mass spectrometer UHVS-4 system VF-1 furnace SD-40 vacuum station ATC-EPN2 chemical-molecular beam epitaxy system Specialized GaN MBE Research System ATC-EPN2 ATC-EPN2 is the MBE system specially designed for Group III-nitrides epitaxy. The flow of purified ammonia plays as a nitrogen source- this method demonstrates a number of principal advantages as compared with plasma-activated nitrogen and therefore becomes widely used. ATC-EPN2 growth chamber design followed by reinforced pumping system allow to reach V/III ratio from 1 up to 1000 while keeping GaN growth rate of 1 m /h under the total pressure not more than 3*10-5 Torr. The main novel solution is that ATC-EPN2 system allows varying V/III ratio over the wide range. This feature is provided by the original water cooled sample heater manipulator and the specific arrangement of the ammonia inlet in the growth chamber. As a result, the NH3 cracking takes place practically at the substrate only (the common situation is that hydrogen, originated from ammonia cracking on heated surfaces, is poorly pumped by turbo-molecular pumps and terminates the MBE growth mode). ATC-EPN2 MBE system enables essentially wider range of technological parameters in comparison to conventional AIIIBV MBE systems adapted to nitrides growth. Our recent GaN growth studies showed that increased V/III ratio leads to remarkable increase of PL intensity smoother surface of the layer enhanced acceptor (Mg) activation. ATC-EPN2 is: Intended and designed specially for the growth of GaN, InGaN, AlGaN by MBE using NH3 as active nitrogen source Compact and user friendly system for scientific research The equipment for advanced research: Extended resources for varying of the V/III ratio during the growth. Special attention paid on the accuracy of absolute sample temperature measurement, the traditional ATC-EPN2 chemical-molecular beam epitaxy system problem in MBE. Novel design- the complex solution for maintaining of extremely high gas fluxes: Full water cooling of the main manipulator (including sample heater unit) Three stage pumping Special arrangement of the gas inlet Customer's support and training programs: Together with the System we also provide optimal growth parameters (with the demonstration of real growth processes): for GaN buffer layer on sapphire substrates for undoped GaN layers for n-type (by Si) and p-type (by Mg) doping Above item is included into the training service, provided for Customer acquaintance with our MBE systems the training program could be extended, by the Customer's special order, to include also the growth of InGaN layers and quantum wells On completing of the warranty period (1 year) post-warranty service is available by Customer's special order What can this equipment really do? ATC-EPN2 System description Growth chamber Water cooled main manipulator Substrate mounting block Resistive IR heater Radiation shield Two W-Re thermocouples LN2 cryo-panel Gas inlet block Sources block 5 shuttered ports with effusion cells (PBN crucible, Ta resistive IR-heater) the Sources block for 3 effusion cells is available optionally (this Source block could be used for the basic growth study or for microelectronic devices manufacturing) the "hot lips" effusion cells are available optionally ATC-EPN2 chemical-molecular beam epitaxy system Shuttered optical window for pyrometer Optical window for laser interferometer LN2 cryo-panel Load-lock/ transfer system Loading chamber Speed loading door 2-positioned cassette for substrate holders 4-positioned cassette is available by special order Manipulator Viewports Pumping system For growth chamber Three-stage: turbo-molecular (with gate valve)/ diffusion / rotary pump (the diffusion pump essentially increases an efficiency of H2 pumping and is needed at maximum NH3 fluxes) Ion pump with gate valve for standby regime For load-lock/ transfer chamber Ion pump with gate valve / rotary pump Ammonia supply system Two stage ammonia distillation, Peltier controller Mass-flow controller Laser interferometer Quadrupole mass-spectrometer UHV gauges Pyrometer IBM PC based process control system ATC-EPN2 Technical data Background pressure (sources switched off) Sample holder diameter Maximum substrate temperature Maximum effusion cells temperature Ammonia flux near the substrate 1.10-9 Torr 40 mm 1000 oC 1250 oC 1015...1018 What can this equipment really do? cm-2*sec-1 ATC-EPN2 chemical-molecular beam epitaxy system The MBE system ATC-EPN2 was put into operation in the beginning of 1999. It was preceded by intensive tests (during 8 months) of the previous model, EPN1, in order to try as much as possible all the potentialities of the equipment and to work out initial stages and basic regimes of the GaN growth. The main results are as follows: Technologic regimes allowing growth of undoped GaN (residual n-carrier concentration at level < 5? 1016cm-3) with mirror-like surfaces (Fig.1) have been found. Fig. 1. Growth pattern of undoped GaN film with mirror-like surface Constructive features of ATC-EPN systems were found to extend essentially the range of main working parameters as compared to the traditional MBE systems adapted for nitride growth. For example, V/III ratio as high as 1000 can be obtained while keeping the growth rate at usual values (Fig.2). This feature occurred to be very useful for p-doping: the Mg-doped samples grown at V/III ratio close to 500 demonstrate a hole concentration as high as 7? 1017cm-3, what is at the best level reported so far in literature for GaN layers doped with Mg by MBE. On the other hand, the higher V/III ratio, the smoother the GaN layer surface and the more intensive its band-edge photoluminescence. This effect was for the first time reported by the group of CNRS (France)( N. Grandjean et.al., Jpn. J. Appl. Phys. 38, 618 (1999)). Note, however, that used there RIBER 32P MBE system, adapted for ammonia process, was limited by V/III ratio of 100. ATC-EPN2 chemical-molecular beam epitaxy system Fig. 2. Effect of V/III ratio on the GaN growth rate Original methods were worked out to calibrate an absolute substrate temperature with an accuracy 10 K (while the relative temperature stability not worse than 5 K). It helps not only to maintain working regimes more reliably, but also to carry out various fundamental and applied scientific research. For example, an important thermodynamic properties of GaN were experimentally determined using ATC-EPN2 system (A.N. Alexeev et.al. MRS Internet J. Nitride Semicond. Res. 4, 6 (1999)). In this work the important methodological result was also obtained: for the first time the laser reflectivity oscillations during GaN evaporation were detected owing to extremely smooth surface previously formed during the growth. Si-doped samples demonstrate electron concentration and a Hall mobility of 5? 1018cm-3 and 150 cm2/V? s (the usual values for n-layers in optoelectronic nitride devices), respectively. The problem of In insertion into GaN-based heterostructures as thin strained InGaN layers (quantum wells) is another of hot topics in current world's nitride researches. The simple and efficient experimental method to determine maximal possible In flux at given substrate temperature was worked out and tested using ATC-EPN2 system (V.P. Chaly et.al. J.Cryst. Growth, 206, 147 (1999).). This knowledge is very important for InGaN quantum wells growth in wide range of substrate temperatures (note that the essential progress in bright LEDs manufacturing by MOCVD was related with increased temperatures of InGaN growth (Sh. Nakamura. Sol. St. Comm. 102, 237 (1997)). On the base of these results InGaN multiple quantum wells were grown on ATC-EPN2 at substrate temperatures up to 750 C, what is essentially higher than ever reported for nitrides growth by MBE. These InGaN quantum wells (Fig.3) can be used as an active layers in light emitting devices. ATC-EPN2 chemical-molecular beam epitaxy system Fig. 3. Photoluminescence of InGaN quantum wells Home | About | Know-How | Products | Equipment | News | FAQ | Contact EP3 MBE machine EPN2 CMBE for GaN QMS-1 mass spectrometer UHVS-4 system VF-1 furnace SD-40 vacuum station Multi-purpose ultra high vacuum station UHVS-4 Multi-purpose ultra high vacuum system UHVS-4 Wide range of R&D works under Ultra High Vacuum (UHV) conditions Applications preliminary preparation of details and units for MBE, CBE etc. (for example, molecular sources annealing by their own heaters, testing) several kinds of electro-physical experiments under UHV Features UHV base pressure design, high versatility, two chamber design, simple in maintenance, easy load-lock of the samples into the vacuum chamber, precise manipulator for 3D-positioning of the sample, high voltage or current lead-in, possibility to connect with quadrupole mass-analyzer, special system design according to customer wishes. Standard configuration includes research chamber, semple preparation chamber with load-lock, and control and supply rack. Accessories Rotation mechanism, flange with electrical feedthroughs, swinging mechanism, manipulator of sample holder, vacuum gauge, viewports DN100, DN63, DN35 Technical data Residual pressure in working chamber Time of pumping from atmosphere to pressure 6.65.10-8 Pa (5.10-10 Torr) Bakeout temperature of UHV elements on the pumping chamber Number of working flanges on the research chamber Number of working flanges on the sample preparation chamber Volume of each chamber two ceolitum pumps for primary vacuum Pumping 400 and 250 l/sec ion pumps for UHV Ti-sublimation pump for UHV Power supply Maximum power consumption vacuum system 7.10-11 Torr 20 hours 200 oC 12 11 250 (diameter) x 350 mm 2 2 1 three phase 380/220 10%, 50 Hz 7.5 kW 1950 x 2420 x 1765 mm Multi-purpose ultra high vacuum station UHVS-4 Size Weight control and power supply rack vacuum system control and power supply rack Home | About | Know-How | Products | 600 x 650 x 1600 mm 500 kg 200 kg Equipment | News | FAQ | Contact EP3 MBE machine EPN2 CMBE for GaN QMS-1 mass spectrometer UHVS-4 system VF-1 furnace SD-40 vacuum station VF-1 high temperature high vacuum furnace High-temperature vacuum furnace VF-1 Excellent potential in the field of various material high vacuum annealing. Application areas annealing of wide range of vacuum materials for purposes of vacuum and electronic industry: stainless steel, W, Ta, W-Re, BN, Mo, pyrolitic Ti, etc. technological soldering of refractory materials and ceramics using high temperature solders UHV technics support (MBE, CBE, etc.): preparation of details and units possibility of connection with quadrupole mass-analyzer QMS-1 in a special configuration to investigate the high-temperature outguessing of materials in vacuum Features UHV design, annealing temperature up to 1800iC, temperature control by W-Re thermocouple, low residual pressure, easy loading, high uptime, possibility of process programming Technical data Working annealing volume diameter height 80 mm 200 mm Maximum temperature 1800 oC Working vacuum level 7.5.10-5 Torr Accuracy of heating temperature regulation 30 oC Stability of heating temperature 15 oC Vacuum level (at room temperature conditions) Maximum time of temperature decrease from 1000 oC to 100 oC without using of cooling system Type of cooling Pumping Temperature control Maximum power consumption 2.10-10 Torr 3 hours water cooling two ceolitium pumps, 400 l/sec ion pump, Ti-sublimation pump W-Re thermocouple 15 kW VF-1 high temperature high vacuum furnace furnace vacuum rack Dimensions control and power supply rack Home | About | Know-How | Products | 1600 x 700 x 920 mm 800 x 620 x 650 mm Equipment | News | FAQ | Contact EP3 MBE machine EPN2 CMBE for GaN QMS-1 mass spectrometer UHVS-4 system VF-1 furnace SD-40 vacuum station SD-40 universal vacuum station Universal vacuum station SD-40 (T, M, E, G) Universal vacuum station SD-40 is ideal for scientific applications and advanced technology development. SD-40 is compact and incorporates a large quantity of optional equipment to design the electronic devices based on Si, Ge, A3 B5, A2 B6 compounds and other materials. Features High fidelity, economy, small size, flexibility, service simplicity, ecological clarity of processes, possibility to create a flexible technological line Applications R&D investigation and small scale production in electronics, medicine, metallurgy, chemistry Possible delivery sets SD-40 Basic unit is used to provide technological processes in vacuum and at low pressure atmosphere of controlled gas mixture. Its configuration includes: mainframe, electromagnetic valves, venting system, vacuum chamber, vacuum measuring unit, rotary pump, piezovalve, turbomolecular pump, gas filling system, buffer bottle, control unit, power supply. Universal vacuum station may be supplied in the following configurations: SD-40T - Basic unit with resistive evaporation unit SD-40E - Basic unit with dry etching unit SD-40M - Basic unit with magnetron sputtering unit SD-40G - Basic unit with electron evaporation unit Technical data Residual chamber pressure Chamber volume Rotary pump productivity Turbomolecular pump productivity Liquid nitrogen trip volume Operating mode Preoperating time Power supply Power consumtion Water outlet Dimensions < 1.3 . 10-5 Pa 40 L 5/5 L/sec 500 L/sec 2L automatic and manual 2 hours three phase 220/380V, 50Hz no more than 5 kW 2 L/min 600 x 1190 x 1520 mm SD-40 universal vacuum station Home | About | Know-How | Products | Equipment | News | FAQ | Contact EP3 MBE machine EPN2 CMBE for GaN QMS-1 mass spectrometer UHVS-4 system VF-1 furnace SD-40 vacuum station SD-40T Resistive evaporation unit Resistive evaporation unit SD-40T Applications In complete with the basic unit SD-40 it is used for: Resistive evaporation unit with two evaporators metallic and alloy films deposition fabrication of nonmetallic and composite layers fabrication of multilayer structures Ohmic and Shottky contacts formation thermal treatment in vacuum or in inert gas atmosphere at low pressure Features three independent evaporation units both film deposition and thermal treatment at the same process two possible process geometry: "from down to up" and "from up to down" sample temperature variation during deposition different specimen holders computer control of the process Configuration Set of evaporators set of evaporation units and holders protective shieldings planetary type specimen holder for 2-inch substrate with a heater power supply The main technical parameters Sample temperature Maximum specimen dimensions Layer thickness uniformity up to 3000 C 50 x 60 mm 5% SD-40T Resistive evaporation unit SD-40E dry etching unit Dry etching unit SD-40E Applications In complete with the basic unit SD-40 it is used for collimated ion beam etching of both singleand multicomponent materials for: Ion gun Sample thinning Surface cleaning Selectiveless etching of multilayer structures Destroyed and oxide layer removing Surface passivity by reactive gases Features wide range of ion energy technological operations followed by the etching can be done at the same process additional active gas can be supplied to the etching zone separated ion current and ion energy control rotating substrate holder variable incident angle Configuration GaAs etching rate via ion energy (Ar pressure P=3x10-4 Torr) ion gun additional power supply 2.5kV/600 mA rotating sample holder 50 mm in diameter The main technical parameters Substrate diameter Range of ion energy Power supply AlGaAs/GaAs-laser structure profile fabricated by dry etching 40 mm 20 eV - 2 keV 2.5 kV/ 600 mA SD-40E dry etching unit SD-40M Magnetron sputtering unit Magnetron sputtering unit SD-40M Applications In complete with the basic unit SD-40 it is used for preparation of: multilayer interferential mirrors heatproof layers transparent conductive films mask metallic films, high melting point ones including Magnetron sputtering unit semiconductor and piezoelectric layers high temperature superconductivity layers layers for sample annealing following by implantation Features three targets both inert and active gas atmosphere two independent gas channels three substrate holders controlled substrate heating laser interferometer control of layer thickness Configuration a set of three water-cooled direct current discharge magnetrons rotative sample holder for three substrates a set of screen and shutters double chanell precision piezovalve laser interferometer power supply The main technical parameters Sample temperature Substrate diameter Target diameter Layer thickness uniformity Power supply up to 3000 C 40 mm 40 mm 5% 2.5 kV / 600 mA, direct current SD-40M Magnetron sputtering unit SD-40G Electron evaporation unit Electron evaporation unit SD-40G Applications In complete with the basic unit SD-40 it is used for deposition of: optical covering heatproof layers protective films Electron evaporator decorative coverages Features dust materials evaporation high melting point materials and dielectrics evaporation laser interferometer control Configuration electron evaporator set of metal (Mo, Ta) and graphite cups laser interferometer power supply. holder The main technical parameters Sample up to 300iN temperature up to 40mm Substrate diameter up to 7mm Cup diameter ATC - Semiconductor Devices News EVENTS We presented laser diodes, accessories and medical laser devices at the International Trade Fair for Laser Technology & Technical Optics, which was held in Hong Kong Convention and Exhibitions Centre on 11-14 October, 2000. Hong Kong pulses as an information and sourcing centre for new production technologies. It is strategically placed at the gateway to China and the centre of Asia, serving as a perfect connecting point to all major laser markets in the region specifically China, Taiwan, Korea, Japan and Singapore. Asian countries recognise the importance of applying high tech advances in the manufacturing sector and Hong Kong's close proximity provides the direct access. It is a close link to these key target markets. Visitors from all the globe expressed close interest to our products. Purchase contracts concluded. Mutually beneficial contacts in the field of semiconductor technology transfer were established. Visit of USA congressmen and NASA director On August 30th, 2000, delegation of US governmental officials visited ATC-SD premises. Alexander Ter-Martirosyan, General Director of ATC-Semiconductor Devices, presented our company, products and fields of activity. On photo, Alexander Ter-Martirosyan demonstrates medical laser Atcus-15 to US officials. New method of cancer treatment with use of Atcus-15 aroused vivid interest of honourable guests. In the middle: NASA Administrator Daniel S. Goldin. ATC - Semiconductor Devices News Visit of Russian Minister of Science and Technologies ATC - Semiconductor Devices News On March 15th, 2000, delegation of top-level Russian executives visited ATC-SD premises. The Ministers were impressed by our achievements in the field of semiconductor technologies. A special governmental program supporting our research of the GaN growth technology was deliberated. On photo, left to right: Andrey Fursenko - Director of Regional Foundation for Scientific and Technological development Alexander Ter-Martirosyan - General Director of ATC-SD Victor Chaly - Chairman of ATC-SD Director Board Michail Kovalchuk - Director of Institute for crystallography of the Russian Academy of Sciences Igor Sokolov - Leading scientist of our MBE Department Michail Kirpichnikov - Russian Minister of Science and Technologies Gennady Tereshchenko - Deputy Minister of Science and Technologies Article in European Semiconductor European Semiconductor magazine published an article about ATC-Semiconductor Devices (March 1999 issue, pages 63-64). The article is called "Russian-grown know-how for sale" and is devoted to our facilities, semiconductor equipment and related technologies that we develop and offer for sale. ICONO'98 SPIE Conference in Moscow The 16th International Conference on Coherent and Nonlinear Optics (ICONO'98) was held on June 29 - July 3, 1998, at the Presidium Building of the Russian Academy of Sciences, Moscow, Russia. ATC-SD participated in the technical Exhibition related to the Conference, as well as Spectra-Physics, Coherent, Polaroid LD, Spiricon and many others. ATC - Semiconductor Devices News Council of Federations Members Visit ATC-SD On January 27-29th, 1998, the first outdoor session of Council of Federations, the higher chamber of the Russian Parliament, was held in Saint-Petersburg. On January 27th, sixty members of the Council visited several Saint-Petersburg enterprises - Kirovsky plant, Beer factory "Baltica", Regional Foundation for Scientific and Technological Development (RFSTD), and ATC - Semiconductor Devices. Members of the Council familiarized themselves with ATC-SD production facilities, equipment and products, expressing explicit interest to the speech performed by ATC-SD General director, Dr. Alexander Ter-Martirosyan. Home | About | Know-How | Products | Equipment | Medicine | Events | FAQ | Contact Medicine Page of ATC-SD MEDICINE This page is under costruction. Sorry for any inconvenience. Atcus-15 - medical laser device Atcus-15 usage tables ATTENTION! Corrected on March 15, 2001. Atcus-15 usage tables (in Russian). ATTENTION! Corrected on March 15, 2001. New! Treatment of chronic rheum (in Russian). Selective laser hyperthermia of malignant neoplasms - article to SPIE. Selective laser hyperthermia of malignant neoplasms - short version of the same article. Treatment of cutaneous vascular displasia Laser treatment cases Usage of Atcus-15 in cosmetology (in Russian). Home | About | Know-How | Products | Equipment | Medicine | Events | FAQ | Contact Atcus-15 usage tables Usage of Atcus-15 onneee This page is under costruction. Sorry for any inconvenience. Table 1: Indication scores 0 1 2 3 4 5 = = = = = = contraindication for the laser surgery laser surgery is not recommended laser surgery can be used if other techniques have failed laser surgery is possible but is in competition with other techniques good indication; laser surgery is better than other techniques absolute indication for the laser surgery; other techniques are not recommended Table 2: Dermatology Score Disease / structure 0 1 2 3 4 Treatment method contact non-contact coagulation cutting 5 interstitial coagulation Condylomata acuminata 10-15 W / 0.3-0.5 s / 0.5 s 8-14 W / cw - Mollusca contagiosa 10-15 W / 0.3-0.5 s / 0.5 s - - Warts Benign tumors of the skin 10-15 W / 0.3-0.5 s / 0.5 s 8-14 W / cw - small 10-15 W / 0.3-0.5 s / 0.5 s - - large 10-15 W / 0.5 s / 0.5 s 8-14 W / cw 4-5 W / cw 10-15 W / 0.5 s / 0.5 s 8-14 W / cw 4-5 W / cw 10-15 W / 0.3-0.5 s / 0.5 s - - 10-15 W / 0.5 s / 0.5 s 8-14 W / cw 4-5 W / cw 4-6 W / 0.3-0.5 s / 0.5 s - 4-5 W / cw 4-6 W / 0.3-0.5 s / 0.5 s - - 10-15 W / 0.5 s/ 0.5 s 8-14 W / cw - Inoperable cutaneous / subcutaneous metastases of various tumors (palliative treatment) Inoperable small semimalignant and malignant skin tumors (Basalomas, Bowen's disease, Kaposi large sarcomas) Keloid / hypertrophic scars Leucoplakia Wound debridement Table 3: Vascular system (dermatology, surgery, ENT, gastroenterology) Score Disease / structure VASCULAR MALFORMATIONS port-wine stains (PWS) 0 1 2 3 4 5 Treatment method contact non-contact coagulation cutting interstitial coagulation 4-6 W / 0.3-0.5 s / 0.5 s - - 8-12 W / 0.3-0.5 s / 0.5 s - 4-5 W / cw 12-15 W / cw - - 8-12 W / 0.3-0.5 s / 0.5 s - 4-5 W / cw 12-15 W / cw - - HEMANGIOMAS plane 8-12 W / 0.3-0.5 s / 0.5 s - - tuberous 8-12 W / 0.3-0.5 s / 0.5 s - 4-5 W / cw 12-15 W / cw - - 4-6 W / 0.3-0.5 s / 0.5 s - - tuberous transformation of PWS venous, artero-venous irradiation through an ice cube lymphangiomatous, mixed irradiation through an ice cube irradiation through an ice cube Facial telangiectasia Atcus-15 usage tables Spider nevi 4-6 W / 0.3-0.5 s / 0.5 s - - Lip angiomas - small 8-12 W / 0.3-0.5 s / 0.5 s - - Lip angiomas - large 8-12 W / 0.5 s / 0.5 s - - Hemangioma senilis 8-12 W / 0.3-0.5 s / 0.5 s - Perforans varices Leg telangiectasia - - 5-7 W / 0.5-1.0 s / 0.5 s with cooling spray - 6-8 W / cw intraluminally with NaCl rinsing - Table 4: Oral cavity, pharynx * Score Disease / structure Treatment method non-contact coagulation contact cutting interstitial coagulation Adenoidal growth - 8-14 W / cw - Gingival hyperplasia - 8-14 W / cw - Velum partial resection (OSAS) Tonsils 0 1 2 3 4 5 - 8-14 W / cw 4-5 W / cw tonsillotomy - 8-14 W / cw - tonsillectomy - 8-14 W / cw - 10-15 W / 0.5 s / 0.5 s 8-14 W / cw 4-5 W / cw - 8-14 W / cw - 4-6 W / 0.5 s / 0.5 s (coagulation of fistula ostium after coagulation of fistula lumen) - 4-6 W / cw intraluminally - 8-14 W / cw - 2-4 W / 0.3-0.5 s / 0.5 s - - 4-6 W / 0.5 s / 0.5 s - - Tumors of the benign tongue malignant (resection) Oral fistula Uvula resection (treatment of snoring) Aphthae Leucoplakia *these parameters should be clinically confirmed Table 5: Upper respiratory tract * Score Disease / structure 0 1 2 Treatment method 3 4 5 Epistaxis in case of Osler?s disease Laryngeal papillomatosis Laryngeal stenosis non-contact coagulation contact cutting interstitial coagulation 6-8 W / cw - - 8-12 W / 0.5 s / 0.5 s 8-14 W / cw - congenital - 8-14 W / cw - scarred - 8-14 W / cw - 10-15 W / 0.5 s / 0.5 s 8-14 W / cw - - 6-8 W / cw 4-5 W / cw - 6-8 W / cw 4-5 W / cw Malignant laryngeal tumors (palliative ablation of tumor) Nasal polyps Nasal turbinates *these parameters should be clinically confirmed Table 6: Lower respiratory tract (bronchopulmonal endoscopy) * Score Disease / structure 0 1 2 3 Treatment method 4 5 non-contact coagulation contact cutting Tracheal and bronchial fistulas - - Tracheal and bronchial stenosis (benign) congenital - 8-14 W / cw interstitial coagulation 4-6 W / cw intraluminally - Atcus-15 usage tables scarred congenital vascular disorders (CVD) - 8-14 W / cw - 8-12 W / 0.5 s / 0.5 s 8-14 W / cw 4-5 W / cw granulomas - 8-14 W / cw - papillomas 10-15 W / 0.5 s / 0.5 s 8-14 W / cw - polyps 10-15 W / 0.5 s / 0.5 s 8-14 W / cw - 10-15 W / 0.5 s / 0.5 s 8-14 W / cw - Tracheal and bronchial stenosis (malignant) *these parameters should be clinically confirmed Table 7: Thoracic wall, chest cavity (thoracic surgery, thoracoscopy) * Score Disease / structure 0 1 2 3 Tratment method 4 5 non-contact coagulation contact cutting interstitial coagulation - 8-14 W / cw - Biopsies (thoracoscopic lung biopsies) Decortication (thoracoscopic) Pleurodesis (thoracoscopic) Resection of lung metastases (atypical, open procedure) Recurrent pneumothorax (blebs and bullae, thoracoscopic) Sympathectomy (thoracoscopic) Tumors of the thoracic wall - 8-14 W / cw - 10-15 W / 0.5 s / 0.5 s - - 10-15 W / 0.5 s / 0.5 s 8-14 W / cw - 10-15 W / 0.5 s / 0.5 s - - - 8-14 W / cw - 10-15 W / 0.5 s / 0.5 s 8-14 W / cw - - 8-14 W / cw - Wedge resection *these parameters should be clinically confirmed Table 8: Gastrointestinal tract (surgery, gastroenerology) * Score Disease / structure 0 1 2 3 Treatment method 4 5 Esophago-tracheal fistula Colorectal carcinoma, palliative tumor mass reduction Angiodysplasia polyposis coli Polyps villous adenoma contact cutting - - 10-15 W / 0.5 s / 0.5 s 8-14 W / cw - 8-12 W / 0.5 s / 0.5 s - - - 8-14 W / cw - - 8-14 W / cw - 10-15 W / 0.5 s / 0.5 s 8-14 W / cw - scarred - 8-14 W / cw - congenital - 8-14 W / cw - malignant Esophagus stenosis interstitial coagulation 4-6 W / cw intraluminally non-contact coagulation *these parameters should be clinically confirmed Table 9: Peritoneal cavity (laparoscopy) * Score Disease / structure Appendectomy ** Adhesiolysis congenital post-inflammatory Cholecystectomy ** Herniorraphy 0 1 2 3 Treatment method 4 5 non-contact coagulation contact cutting interstitial coagulation 8-12 W / cw 8-14 W / cw - - 8-14 W / cw - - 8-14 W / cw - 8-12 W / cw 8-14 W / cw - 10-15 W / 0.5 s / 0.5 s - - Lymph node resection ** 8-12 W / cw 8-14 W / cw - Orchidolysis ** 8-12 W / cw 8-14 W / cw - Atcus-15 usage tables Vagotomy - 8-14 W / cw - *these parameters should be clinically confirmed ** combined technique: preliminary vessel coagulation, then cutting (removal) Table 10: Peritoneal cavity (abdominal surgery) * Score Disease / structure Adhesiolysis Treatment method non-contact coagulation contact cutting interstitial coagulation congenital - 8-14 W / cw - post-inflammatory - 8-14 W / cw - 8-12 W / cw 8-14 W / cw - - 8-14 W / cw - 10-15 W / 0.5 s / 0.5 s 8-14 W / cw - - 8-14 W / cw - 0 1 2 3 4 5 Lymph node resection ** Parenchymatous organ resection (liver, spleen, kidney, pancreas) Tumor resection Vagotomy *these parameters should be clinically confirmed ** combined technique: preliminary vessel coagulation, then cutting (removal) Table 11: Proctology * Score Disease / structure Treatment method non-contact coagulation contact cutting interstitial coagulation - 8-14 W / cw - 10-15 W / 0.5 s / 0.5 s - - - 8-14 W / cw - - 8-14 W / cw - 10-15 W / 0.5 s / 0.5 s - -- 10-15 W / 0.5 s / 0.5 s 8-14 W / cw - - - intraluminally 4-6 W / cw acquired - - 4-6 W / cw post-inflammatory - - 4-6 W / cw tumorous - - 4-6 W / cw Hemorrhoidectomy - 8-14 W / cw - Pilonidal cystectomy - 8-14 W / cw - polyposis coli - 8-14 W / cw - villous adenoma - 8-14 W / cw - 0 1 2 3 4 5 Anal stenosis ablation Anal ectropion coagulation Anal marisque excision excision Anal fissures coagulation Condylomata acuminata congenital Fistula Polyps *these parameters should be clinically confirmed Table 12: Urogenital tract (gynecology) * Score Disease / structure Condylomata acuminata Ectopic pregnancy isthmic tubal pregnancy ampullary tubal pregnancy Endometriosis Hysteroscopic benign endometrial polyps metromenorrhagia 0 1 2 3 Treatment method 4 5 non-contact coagulation contact cutting interstitial coagulation 10-15 W / 0.5 s / 0.5 s 8-14 W / cw - - 8-14 W / cw - - 8-14 W / cw - 10-15 W / 0.5 s / 0.5 s 8-14 W / cw - - 8-14 W / cw - 10-15 W / 0.5 s / 0.5 s 8-14 W / cw - Atcus-15 usage tables submucous fibromas uterine septa Lymph node resection (laparoscopic) ** 8-14 W / cw - - 8-14 W / cw - 8-12 W / cw 8-14 W / cw - - 8-14 W / cw - 8-12 W / cw 8-14 W / cw - Peritubal adhesions Polycystic ovary disease (PCOD) ** - *these parameters should be clinically confirmed ** combined technique: preliminary vessel coagulation, then cutting (removal) Table 13: Urogenital tract (urology) * Score Disease / structure Treatment method non-contact coagulation contact cutting interstitial coagulation Condylomata acuminata 10-15 W / 0.5 s / 0.5 s 8-14 W / cw - Penile carcinoma 10-15 W / 0.5 s / 0.5 s 8-14 W / cw - 10-15 W / 0.5 s / 0.5 s - - - - 4-5 W / cw 0 1 2 3 transurethral 4 5 interstitial Psrostate BPH Tumors of the bladder carcinoma (ITT, perineal route) superficial carcinoma - - 4-5 W / cw 10-15 W / 0.5 s / 0.5 s 8-14 W / cw - invasive carcinoma 10-15 W / 0.5 s / 0.5 s - - - 8-14 W / cw - - 8-14 W / cw - - 8-14 W / cw - acquired Stenosis of urethra or benign ureter congenital malignant *these parameters should be clinically confirmed ** combined technique: preliminary vessel coagulation, then cutting (removal) Table 14: Neurosurgery * Score Disease / structure 0 1 2 Hemostasis and coagulationduring or prior to removal of tumors: AV-malformations astrocytomas glioblastomas gliomas meningiomas oligodendrogliomas pituitary tumors Preparation and excision of tumors (open surgery) Interstitial Thermotherapy (ITT) of tumors (stereotactic or endoscopic guidance) 3 Treatment method 4 5 non-contact coagulation contact cutting interstitial coagulation 8-12 W / cw - - - 8-14 W / cw - - - 4-5 W / cw *these parameters should be clinically confirmed Please use BACK button of your browser or Go to Main ATC-SD Medicine Page Iieacaiey e eniieuciaaie Iieacaiey e ieiaiaie aunieiyiaaaoe/aneiai aicaaenoaey eacaiiai aiiaaoa ATKON-15 (810 ii) Aoiieiaea iieacaiee Oaaeeoa 1: Aoiieiaea iieacaiee Aoiia Iieacaiey 0 Eacaiay oeoaey iioeaiiieacaia 1 Eacaiay oeoaey ia aeiiaiaiaaia 2 Eacaiay oeoaey iiaeao auou iiaaaaia ie ia yooaeoeaiinoe aoaeo iaoiaia ea/aiey 3 Eacaiay oeoaey aiciiaeia, ii ia eiaao iaeiouanoa iaaa aoaeie iaoiaaie ea/aiey 4 Eacaiay oeoaey yooaeoeaiaa aoaeo iaoiaia. 5 Aanieoiua iieacaiey e iiaaaaie eacaiie oeoaee. Ieiaiaiea aoaeo iaoiaia ea/aiey ia aeiiaiaiaaii Iieacaiey e oeoaee n eniieuciaaieai aeiaiiai eacaa AOEON-15 Oaaeeoa 2: Aaiaoieiaey Caaieaaaiea/ nooeooa Aoiia iieacaiee Aaneiioaeoiay eiaaoeyoey Eiioaeoiia enna/aiea Eioanoeoeaeuiay aeiaoaiey Iieacaiey e eniieuciaaie Inoieiia/iay eiiaeeiia 4 10-15 Ao / 0,5 nae 8-14 Ao --- Eiioaaeiciue iieene 4 10-15 Ao / 0,5 nae 8-14 Ao --- Aoeuaaiay aiaaaaea 4 10-15 Ao / 0,5 nae 8-14 Ao --- Iaeaiueea 4 10-15 Ao / 0,5 nae 8-14 Ao --- Aieuoea 3 10-15 Ao / 0,5 nae 8-14 Ao 4-5 Ao 4 10-15 Ao / 0,5 nae 8-14 Ao 4-5 Ao Aiaiea/anoaaiiua iiooiee eiaee Iaiiaaaaeuiua eiaeiua e iiaeiaeiua iaoanoacu acee/iuo iiooieae (iaeeeaoeaiia ea/aiea) Iaiiaaaaeuiua oneiaii-ceiea/anoaaiiua e ceiea/anoaaiiua iiooiee eiaee (aacaeeiiu, aieaciu Aioyia, naeiia Eaiioe) Iieacaiey e eniieuciaaie Iaeaiueea 4 10-15 Ao / 0,5 nae 8-14 Ao --- Aieuoea 4 10-15 Ao / 0,5 nae 8-14 Ao 4-5 Ao Eaeeieau - aeiaoioe/aneea oaou 2 4-6 Ao / 0,5 nae --- 4-5 Ao Eaeeiieaeey 4 4-6 Ao / 0,5 nae --- --- Naiaoey ai 3 10-15 Ao / 0,5 nae 8-14 Ao --- Eiioaeoiia enna/aiea Eioanoeoeaeuiay aeiaoaiey Oaaeeoa 3: Ninoaenoay nenoaia (aaiaoieiaey, oeoaey, aanoiyioaieiaey) Caaieaaaiea/ nooeooa Aoiia iieacaiee Aaneiioaeoiay eiaaoeyoey Ninoaenoua aenieacee, aeiiua iyoia, 4 eaaaiiciua aaiaiaeiiu 4 4-6 Ao / 0,5 nae --- --- Iieacaiey e eniieuciaaie aaiiciua e aoaei-aaiiciua aenieacee 4 8-12 Ao / 0,5 nae --- 4-5 Ao iaeo/aiea /aac eoaee euaa 4 12-15 Ao / 0,5 nae --- --- eeioaiaeiiu, niaoaiiua 5 8-12 Ao / 0,5 nae --- 4-5 Ao iaeo/aiea /aac eoaee euaa 5 12-15 Ao / 0,5 nae --- --- Eaieeeyiua 5 8-12 Ao / 0,5 nae --- --- Eaaaiiciua 5 8-12 Ao / 0,5 nae --- 4-5 Ao Iaeo/aiea /aac eoaee euaa 5 12-15 Ao / 0,5 nae --- --- Oaeaaiaeiyeoacee ia eeoa 4 4-6 Ao / 0,5 nae --- --- Ninoaenoua caacai/ee 4 4-6 Ao / 0,5 nae --- --- Iaeaiueea 4 8-12 Ao / 0,5 nae --- --- Aieuoea 4 8-12 Ao / 0,5 nae --- --- Aaiaiaeiiu Aiaeiiu aoa Iieacaiey e eniieuciaaie Naieeuiua aaiaiaeiiu 4 8-12 Ao / 0,5 nae --- --- Aaeeiciua iaoiaiou 4 --- --- 6-8 Ao Oaeaaiaeiyeoacee ia iiaao 3 5-7 Ao / 0,5 nae --- --- Aaneiioaeoiay eiaaoeyoey Eiioaeoiia enna/aiea Eioanoeoeaeuiay aeiaoaiey Oaaeeoa 4: ioiaay iieinou, aioaiu Caaieaaaiea/ nooeooa Aoiia iieacaiee acanoaiey aaaiieaia 3 --- 8-14 Ao --- Aeiaieacey aanai 3 --- 8-14 Ao --- xanoe/iay acaeoey iyaeiai iaa 4 --- 8-14 Ao 4-5 Ao Oiiceeioiiey 4 --- 8-14 Ao --- Oiiceeyeoiiey 2 --- 8-14 Ao --- Ieiaaeeiu Iieacaiey e eniieuciaaie Iiooiee ycuea Aiaiea/anoaaiiua 5 --- 8-14 Ao 4-5 Ao Ceiea/anoaaiiua (acaeoey) 4 10-15 Ao / 0,5 nae 8-14 Ao --- 5 (eiaaoeyoey onouy naeua iinea eiaaoeyoee eaiaea) 4-6 Ao / 0,5 nae --- 4-6 Ao acaeoey ycu/ea (ea/aiea oaia) 3 --- 6-14 Ao --- Aoou 2 2-4 Ao / 0,5 nae --- --- Eaeeiieaeey 4 4-6 Ao / 0,5 nae --- --- Naeue ioiaie iieinoe Oaaeeoa 5: Aaoiea auoaoaeuiua iooe Caaieaaaiea/ nooeooa Aoiia iieacaiee Aaneiioaeoiay eiaaoeyoey Eiioaeoiia enna/aiea Eioanoeoeaeuiay aeiaoaiey Iieacaiey e eniieuciaaie Iiniaua eiaioa/aiey ie caaieaaaiee Ineaa 4 6-8 Ao --- --- Iaieeeiiaoic aeioee 4 8-12 Ao / 0,5 nae 8-14 Ao --- Aiaeaaiiue 4 --- 8-14 Ao --- oaoiaue 3 --- 8-14 Ao --- Ceiea/anoaaiiua iiaiiaaciaaiey aeioee (iaeeeaoeaiay aaeaoey iiooiee) 4 10-15 Ao / 0,5 nae 8-14 Ao --- Iieeiic iiniauo oiaia 5 --- 6-8 Ao 4-5 Ao Iiniaua aeiaeiu 4 --- 6-8 Ao 4-5 Ao Noaiic aeioee Oaaeeoa 6: Oaoaiaiioeaeuiia aaaai (Yiaineiie/aneay oeoaey) Caaieaaaiea/ nooeooa Oaoaaeuiua e aiioeaeuiua naeue Aoiia iieacaiee 5 Aaneiioaeoiay eiaaoeyoey --- Eiioaeoiia enna/aiea --- Eioanoeoeaeuiay aeiaoaiey 4-6 Ao Iieacaiey e eniieuciaaie Noaiic oaoae e aiioia (aiaiea/anoaaiiue) Aiaeaaiiue 5 --- 8-14 Ao --- oaoiaue 5 --- 8-14 Ao --- Aiaeaaiiay ninoaenoay iaoieiaey 5 8-12 Ao / 0,5 nae 8-14 Ao 4-5 Ao Aaioeiu 4 --- 8-14 Ao --- Iaieeeiiu 4 10-15 Ao / 0,5 nae 8-14 Ao --- Iieeiu 4 10-15 Ao / 0,5 nae 8-14 Ao --- 5 10-15 Ao / 0,5 nae 8-14 Ao --- Noaiic oaoae e aiioia (ceiea/anoaaiiue) Oaaeeoa 7: Aoaiay noaiea, ieaaaeuiay iieinou (oiaeaeuiay oeoaey e oiaeineiiey) Caaieaaaiea/ nooeooa Aeiineee (oiaeineiie/aneea aeiinee eaaeiai) Aoiia iieacaiee 5 Aaneiioaeoiay eiaaoeyoey --- Eiioaeoiia enna/aiea 8-14 Ao Eioanoeoeaeuiay aeiaoaiey --- Iieacaiey e eniieuciaaie Aaeioeeaoey (oiaeineiie/aneay) 5 --- 8-14 Ao --- Ieaaiaac (oiaeineiie/aneee) 4 10-15 Ao / 0,5 nae --- --- acaeoey eaai/iuo iaoanoacia (aoeie/iay, eioaiiaaoeiiiay) 4 10-15 Ao / 0,5 nae 8-14 Ao --- aoeaeaeouee iiaaiioiaen (aoeeu, oiaeineiie/anee) 4 10-15 Ao / 0,5 nae --- --- Neiiaoyeoiiey (oiaeineiie/anee) 5 --- 8-14 Ao --- Iiooiee aoaiie noaiee 4 10-15 Ao / 0,5 nae 8-14 Ao --- Eeeiiaeaiay acaeoey 4 --- 8-14 Ao --- Eiioaeoiia enna/aiea Eioanoeoeaeuiay aeiaoaiey Oaaeeoa 8: AEaeoai/ii-eeoa/iue oaeo (oeoaey, aanoiyioaieiaey) Caaieaaaiea/ nooeooa Aoiia iieacaiee Aaneiioaeoiay eiaaoeyoey Ieuaaiaii-oaoaaeuiua naeue 5 --- --- 4-6 Ao Eieiaeoaeuiue ae, iaeeeaoeaiay oeoiaaoeoeaiay iiaaoey 4 10-15 Ao / 0,5 nae 8-14 Ao --- Iieacaiey e eniieuciaaie 5 8-12 Ao / 0,5 nae --- --- Iieeiic oienoiai eeoa/ieea 4 --- 8-14 Ao --- Ainei/aoua aaaiiiaoiciua iieeiu 3 --- 8-14 Ao --- Ceiea/anoaaiiue 5 10-15 Ao / 0,5 nae 8-14 Ao | --- oaoiaue 3 --- 8-14 Ao --- Aiaeaaiiue 5 --- 8-14 Ao --- Aiaeiaenieacey Iieeiic Noaiicu ieuaaiaa Oaaeeoa 9: Aoiay iieinou (eaiaineiiey) Caaieaaaiea/ nooeooa Aiiaiayeoiiey Aoiia iieacaiee Aaneiioaeoiay eiaaoeyoey Eiioaeoiia enna/aiea Eioanoeoeaeuiay aeiaoaiey 3 8-12 Ao / 0,5 nae 8-14 Ao --- 4 --- 8-14 Ao --- anna/aiea niaae Aiaeaaiiuo Iieacaiey e eniieuciaaie Iinoainiaeeoaeuiuo 4 --- 8-14 Ao --- Oieaoenoyeoiiey 4 8-12 Ao / 0,5 nae 8-14 Ao --- Auaeana/aiea 3 10-15 Ao / 0,5 nae --- --- Aeiiney eeioaoe/aneiai ocea 2 8-12 Ao / 0,5 nae 8-14 Ao --- Iiaaoey ii iiaiao iaiiouaiey ye/ea (orchidolysis) 2 8-12 Ao / 0,5 nae 8-14 Ao --- Aaaioiiey 3 --- 8-14 Ao --- Oaaeeoa 10: Aoiay iieinou (aaaiieiaeuiay oeoaey) Caaieaaaiea/ nooeooa Aoiia iieacaiee Aaneiioaeoiay eiaaoeyoey Eiioaeoiia enna/aiea Eioanoeoeaeuiay aeiaoaiey anna/aiea niaae Aiaeaaiiuo 4 --- 8-14 Ao --- Iinoainiaeeoaeuiuo 4 --- 8-14 Ao --- 2 8-12 Ao / 0,5 nae 8-14 Ao --- acaeoey eeioioceia Iieacaiey e eniieuciaaie acaeoey iaaioeiaoiciuo iaaiia (ia/aiu, naeacaiea, ii/ee, iiaaeaeoai/iay aeaeaca) 3 --- 8-14 Ao --- acaeoey iiooiee 4 10-15 Ao / 0,5 nae 8-14 Ao --- Aaaioiiey 3 --- 8-14 Ao --- Oaaeeoa 11: Iieoieiaey Caaieaaaiea/ nooeooa Aoiia iieacaiee Aaneiioaeoiay eiaaoeyoey Eiioaeoiia enna/aiea Eioanoeoeaeuiay aeiaoaiey Aaeyoey aiaeuiiai noaiica 4 10-15 Ao / 0,5 nae 8-14 Ao --- Eiaaoeyoey ie aiaeuiii yeoiieiia 5 --- --- --- Oaaeaiea aaiiieaaeuiuo oceia 4 --- 8-14 Ao --- Enna/aiea 4 --- 8-14 Ao --- Eiaaoeyoey 4 10-15 Ao / 0,5 nae --- --- Oaueiu caaiaai iioiaa Iieacaiey e eniieuciaaie Inoieiia/iua eiiaeeiiu 4 10-15 Ao / 0,5 nae 8-14 Ao Naeue --- Aiooeiinaaoii Aiaeaaiiua 4 --- --- 4-6 Ao Ieiaaoaiiua 4 --- --- 4-6 Ao Iinoainiaeeoaeuiua 4 --- --- 4-6 Ao Iiooieaaua 4 --- --- 4-6 Ao 4 --- 8-14 Ao --- Iieeiic oienoiai eeoa/ieea 4 --- 8-14 Ao --- Ainei/aoua aaaiiiaoiciua iieeiu 3 --- 8-14 Ao --- Aaiiieayeoiiey Iieeiu Oaaeeoa 12: Oiaaieoaeuiue oaeo (aeiaeieiaey) Caaieaaaiea/ nooeooa Inoieiia/iua eiiaeeiiu Aoiia iieacaiee 4 Aaneiioaeoiay eiaaoeyoey Eiioaeoiia enna/aiea 10-15 Ao / 0,5 nae 8-14 Ao Eioanoeoeaeuiay aeiaoaiey --- Iieacaiey e eniieuciaaie Yeoiie/aneay aaaiaiiinou Enoie/aneay ooaiay aaaiaiiinou 3 --- 8-14 Ao --- Aiioeeyiay ooaiay aaaiaiiinou 4 --- 8-14 Ao --- 4 10-15 Ao / 0,5 nae 8-14 Ao --- Aiaiea/anoaaiiua iieeiu yiaiiaoey 4 --- 8-14 Ao --- Iaoiiaiiaaey 4 10-15 Ao / 0,5 nae 8-14 Ao --- Iianeecenoua oeaiiu 4 --- 8-14 Ao --- Iaaaiiaee iaoee 4 --- 8-14 Ao --- acaeoey eeioiocea (eaiaineiie/anee) --- 8-12 Ao / 0,5 nae 8-14 Ao --- Iaeooaaiua niaeee 4 --- 8-14 Ao --- Yiaiiaoeic Aenoaineiie/anee Iieacaiey e eniieuciaaie Iieeeenoic ye/ieeia 4 8-12 Ao / 0,5 nae 8-14 Ao --- Oaaeeoa 13: Oiaaieoaeuiue oaeo (oieiaey) Caaieaaaiea/ nooeooa Aoiia iieacaiee Aaneiioaeoiay eiaaoeyoey Eiioaeoiia enna/aiea Eioanoeoeaeuiay aeiaoaiey Inoieiia/iua eiiaeeiiu 4 10-15 Ao / 0,5 nae 8-14 Ao --- Eaoeiiiu iieiaiai /eaia 4 10-15 Ao / 0,5 nae 8-14 Ao --- Oainoaoaeuiay acaeoey 3 10-15 Ao / 0,5 nae --- --- Eioanoeoeaeuiay acaeoey 4 --- --- 4-5 Ao acaeoey eaoeiiiu (/acoaoaeuiue ainooi) 2 --- --- 4-5 Ao Iiaaoiinoiue ae 5 10-15 Ao / 0,5 nae 8-14 Ao --- Eiaaceaiay eaoeiiia 3 10-15 Ao / 0,5 nae 8-14 Ao --- Iinoaoa Iiooiee ii/aaiai iocuy Noaiic oaou eee ii/aoi/ieea Iieacaiey e eniieuciaaie Aiaeaaiiue 5 --- 8-14 Ao --- Aiaiea/anoaaiiue 5 --- 8-14 Ao --- Ceiea/anoaaiiue 3 --- 8-14 Ao --- Ieiaaoaiiue Oaaeeoa 14: Iaeioeoaey Caaieaaaiea/ nooeooa Aoiia iieacaiee Aaneiioaeoiay eiaaoeyoey Eiioaeoiia enna/aiea Eioanoeoeaeuiay aeiaoaiey Aaiinoac ai aaiy eee ai oaaeaiey iiooieae: AA-aenieacee anoioeoiiu aeeiaeanoiiu aeeiiu iaieiaeiiu ieeaiaaiaiaeeiiu iiooiee aeiioeca 4 8-12 Ao --- --- Iiaaioiaea e oaaeaiea iiooieae (ioeuoue oeoae/aneee ainooi) 4 --- 8-14 Ao --- Eioanoeoeaeuiay oaiioaaiey iiooieae (noaaioaeoe/aneia eee yiaineiie/aneia iaaaaaiea) 5 --- --- 4-5 Ao Ieiaiaiea iieoiiaiaieeiauo aunieiyiaaeoe/aneeo eacaia a ea/aiee oiie/aneeo eieoia. Ianiaeoeau ieiaiaiey iieoiiaiaieeiauo aunieiyiaaaoe/aneeo eacaia a ea/aiee oiie/aneeo eieoia. Ieoaeieeia I.N., yaiaa I.A., Eaieuaiei N.A. Eaoaaa ioieiieaeiaieiaee n eeeieeie NIaAIO ei. aeaa. E.I. Iaaeiaa. A iineaaiea aiau oeoae/aneea aiaoaoaeunoaa a iieinoe iina eiao /aoeo oaiaaioe a noiiio uaayuaai ioiioaiey e neecenoie iaiei/ea iiniauo aeiaei. Iienaii iiiai aaeaioia oeoae/aneeo e iieooeoae/aneeo iaoiaia ea/aiey, naae eioiuo ii/iia ianoi caieiaao eacaiay oeoaey iiniauo aeiaei, ieaeaeay aiciiaeiinou iiaeiaaou yooaeoeaii, aaneiaii, ia ieaaaay e oaiiiiaaa iina. aciiiaacea aeei aiei, eceo/aaiuo acee/iuie oeiaie eacaia, iiaaaeyo e aciiiaacea aeieiae/aneeo yooaeoia, /oi iaiaoiaeii o/eouaaou ie auaia oeoae/aneiai einooiaioa. NI2 eaca ioiineoaeuii iaaiiaie, aai eceo/aiea iiaeiuaaony aiaie e ia iiieeaao aeoaiei a oeaie. N aoaie noiiiu, iaaiciiaeiinou iaaaaaaou yiaae NI2 eacaa /aac naaoiaia e ieioie eiaaoeeouee yooaeo aaeao NI2 eaca iaoaiaiui aey eioaiacaeuiie oeoaee. Oieuei oiioi aeaeiua, ainooiiua caaieaaaiey iaaaaaey iina, iieinoe iina e niioaaonoaouea o/anoee iaaaiiaee iina iiaoo auou iiiiaeiaaiu NI2 eacaii (R.W.Ruckley 1998). Naae ineiaeiaiee NI2 eacaiie yiaiiacaeuiie oeoaee S.G.Selkin (1986) a 11 neo/ayo ec 102 iienuaaao eiaioa/aiey, a 2 neo/ayo - iaeiae eiaee iaaaaaey iina. Eiia oiai, NI2 eaca iaeucy eniieuciaaou aey aanooeoee einoe: ec-ca ieceiai niaaaeaiey aiau a einoiie oeaie aey aa acooaiey oaaoaony iiiai yiaaee, /oi aaaao e iaaaaao einoe, aa naeaanoaoee. Iiiaea aoaea oeiu eacaiiai eceo/aiey iiaoo iaaaaaaouny ii naaoiaiao e iiaoo auou oniaoii ieiaiaiu a yiaiiacaeuiie oeoaee ie aaaaaiee naaoiaiaa a aeanoeee iaeiia/iee iaeiai aeaiaoa, /oi iicaieyao eniieuciaaou yoio oei eacaa ie eiioioiiee, FESS, aey inoaiiaee iiniauo eiaioa/aiee e o.a. Aaiinoaoe/aneee yooaeo aieaa auaaeai o Nd:YAG-eacaa, EO-eaca ia aaao aeoaieiai iiieeiiaaiey yiaaee a oeaie e aieaa auaiaai aey iaoeceiiiie acee. Nicaaiu eacaiua nenoaiu, eioiua iicaieyo iaiyou aeeio aieiu a iioanna aaiou, iaaee/aou n EO ia Nd:YAG eceo/aiea a caaeneiinoe io aeaeaaiiai yooaeoa: iaoeceiiiiai acaca eee aaiinoaca. Aieuieaaue eaca iiaeao auou eniieuciaai aey aaeyoee oeaiae n aiaieuii oiioei aaiinoaoe/aneei yooaeoii, ii ie aai aicaaenoaee iienoiaeo "acaucaeaaiea" e eiau iieuaaao yiaineii, iaooay aecoaeecaoe. Eiia oiai, ii iiaie N.Jones (1999) iaainoaoeii aieuieaaiai eacaa yaeyaony oi, /oi eo/ iniaaiii eaaei anoieoneoaony, eo/ anoiayueeny e ieioiinou iiuiinoe aunoi iaaaao ie eciaiaiee iieiaeaiey naaoiaiaa. Nd:YAG-eaca iiaeao auou eniieuciaai eiioaeoii, /oi iaiiiai yaiiiie/iae e aaciianiae, /ai aenoaioiay iaoiaeea, eaca aaao oiioee eiaaoeeouee, aaeeouee e aaiinoaoe/aneee yooaeou. Yaeaaue eaca iicaieyao oiioi aaeeiaaou iyaeea oeaie, ii aaao ieioie aaiinoac, /oi iaaie/eaaao aai ieiaiaiea a eiieiaee. acee/iua eacaiua nenoaiu auee eniieuciaaiu aey aiaoaoaeunoa ia iiniauo aeiaeiao: NI2, aaiiiaue, Ho:YAG, EO, iieoiiaiaieeiaue, Nd:YAG-eacau. Aieuoie iiuo iaeiieai a ieiaiaiee NI2 eacaa aey yoie oaee. NI2 eacaiay eiaaoeyoey neecenoie iiniauo aeiaei inouanoaeyaony aenoaioii (I.A. Aeiie/oe 1985, A.Y.Oeiai 1987, N.Sudo et al 1983, N.Fukutake et al 1986, Wolfson et al 1996). Ieiaiaiea iieoiiaiaieeiauo aunieiyiaaeoe/aneeo eacaia a ea/aiee oiie/aneeo eieoia. S.Elwany, M.N.Abdel - Moneim (1997) aey iauyniaiey oiioaai eeeie/aneiai yooaeoa NI2 eacaiie oeoaee oiie/aneeo eieoia o 10 aieuiuo n iaaeeaae/aneei eieoii iinea eacaiiai aicaaenoaey iiecaiaeee aeiine a iiiaio iiaaoee e /aac ianyo. N iiiiuu oainienneiiiie yeaeoiiiie ieeineiiee auyaeaii, /oi iaaiia/aeuiay aayieoaeecaoey niiiaiaeaaeanu aaaiaaoeae caiiaiai yieoaeey, oiaiuoaieai eiee/anoaa e aeoeaiinoe neecenoi - iooeiiauo aeaeac, oeaicii niaaeieoaeuiioeaiiie noiiu, oiaiuoaieai canoiy eiae a eaaaiiciuo nieaoaieyo. Auyaeaiiua oeuoanooeooiua eciaiaiey iauyniyo oiioee eeeie/aneee yooaeo iioaaou. Iaiaoiaeiinou iiaeiaaou aenoaioii NI2 eacaii iiaaaeeea e iniaaiiinoe oeoae/aneie oaoieee: a iniiaiii yoi aaeyoey eee aaiiecaoey iaaaieo ioaaeia aeiaeiu. R.W.Ruckley (1998) iaaeaaaao aaiieceiaaou NI2 eacaii an ieaei /anou iiniaie aeiaeiu ai caaieo aa ioaaeia. Iaaeaeuiue eiioo aeiaeiu inoaaeyo eioaeoiui aey iaaioaauaiey iaaciaaiey niaae iaaeao aiaaie iiaaoiinou e iaaaiiaeie iina. Eaoaaeuio iiaaoiinou nioaiyo /oiau ia aiionoeou iiaaaeaaiey iinineaciiai eaiaea. Aaoiae aaieoae aaiiecaoee yaeyaony einou. Oaeie iauai oaaeaiey oeaie ieaeiae iiniaie aeiaeiu, ia iao acaeya, ecauoi/ai e aiionoei eeou ie auaaeaiiie aeiaieacee aeiaei. Ii, anoanoaaiii, aenoaioiui iaoiaii eacaiiai aicaaenoaey iaaiciiaeii aaiieceiaaou caaiea ioaaeu aeiaei, ia oaaeea iaaaiea e naaiea ioaaeu aeiaeiu, a eiaiii aeiaieacey caaieo eiioia iiniauo aeiaei anoa/aaony /aua anaai. Aey aieaa oaiaiiai iaieioeeiaaiey NI2 eacaii a iieinoe iina Mittleman (1982) iaaeaaaao eniieuciaaou aiiieieoaeuiia onoienoai, iicaieyuaa iiaeiaaou n oieoniiai annoiyiey 5 ni, iaiaei, caaiea eiiou iiniauo aeiaei ie eniieuciaaiee aaiiiai onoienoaa inoaony iaainooiiuie. B.M. Lippert, J.A.Werner (1997.1998) ieiaieee eio iaoiaeeo: ianeieuei NI2 eacaiuo aicaaenoaee (1 -2 Ao ii 1 nae) iaiineee ia oaaee/aiiue iaaaiee eiiao ieaeiae iiniaie aeiaeiu iia iiaaoeiiiui ieeineiiii n ieeiiaieioeyoiii (aeaiao iyoia 0,25 ii). ayieoaeecaoey iienoiaeo ca n/ao inoiaeia iaeciaiaiiie neecenoie iaaeao eaceiaaiiuie iyoiaie. Yoio iaoia oiaiuoaao ene acaeoey aenoioe/aneeo eciaiaiee neecenoie, iaaciaaiey eiie a iineaiiaaoeiiiii iaeiaa, iaiaei, iicaieyao aicaaenoaiaaou oieuei ia iaaaiea eiiou iiniauo aeiaei. M. Englender (1995) n/eoaao aiieia ainoaoi/iui eacaiia aicaaenoaea oieuei ia iaaaiea ioaaeu iiniauo aeiaei. Oeacuaay ia oi, /oi iniiaio /anou iiniaiai niiioeaeaiey aicaooiiio iioieo nicaao iaaaiea 2 -3 ni ieaeiae iiniaie aeiaeiu. Aaoi iaiineo iia ieeineiiii neaieouei onoienoaii NI2 eacaiia aaeeouaa aicaaenoaea (15Ao a iinoiyiiii aaeeia), ia aiioneay eaaiiecaoee oeaiae. A iineaiiaaoeiiiii iaeiaa oiieoaony oaao, aniinoaiyueeny ia aanu iauai iiniaie aeiaeiu, oiaiuoay aa aciau. xaac aia iinea iiaaoee oeo/oaiea iiniaiai auoaiey ioia/aii a 93% neo/aaa, ii ia iiaaaai aiaeec oainiioiie e caueoiie ooieoee neecenoie iaiei/ee iina. oaoaaaiea iiniaie aeiaeiu ia anai aa iioyaeaiee a ooieoeiiaeuiii ioiioaiee ia iiaaaaii. Y.P.Krespi et al (1994) eniieuciaae NI2 eaca 7 Ao n noiaeiioeeie eiioeunaie 100ienae., iaeneiaeuiay iiuiinou eiioeuna 350 Ao. Aey aaeyoee 30% iauaia iaaaieo ioaaeia ieaeiae iiniaie aeiaeiu n oiioeie acoeuoaoaie. Ie iaiaoiaeiinoe aaeeiaaou caaiea ioaaeu iiniaie aeiaeiu iaaeaaaao eniieuciaaou Nd:YAG eaca (8 Ao yeniiceoey 3 nae) aey eioanoeoeaeuiie oioieiaaoeyoee ieaeieo iiniauo aeiaei. Aieieii aaiaeony /aac iaaaiee eiiao aeiaeiu a aa oieuo. A acoeuoaoa aicaaenoaey iaacoaony eaiae 2,5 ii a aeaiaoa ia anai iioyaeaiee aeiaeiu. Eiaioa/aiey ia auaaao, oaiiiiaaa iina ia oaaoaony. B.M.Lippert, J.A.Werner (1980 oaeaea eniieuciaaee aey ooaeiyeoiiee Nd:YAG eaca, ii a aenoaioiii aaeeia ( 5 - 10 Ao) e, anoanoaaiii, ioiaoeee aieaa aeeoaeuiua niee caaeeaeaiey, /ai iinea NI2 eacaiiai aicaaenoaey, oioy ioaaeaiiua ooieoeiiaeuiua acoeuoaou iinea Nd:YAG e NI2 eacaiiai aicaaenoaey iaeiaeiau. S.G.Selkin, C.L.Roussos (1994) eniieuciaaee NI2 eaca (20Ao iinoiyiiue aaeei) aey aaiiecaoee iaaaia-ieaeiae /anoe ieaeieo iiniauo aeiaei eae yoaia eiinaioiieanoeee. Oiioea ooieoeiiaeuiua acoeuoaou a iaanoaaeaiiuo 250 neo/ayo iaeucy iauynieou oieuei eacaiie eiioioiieae, oae eae anai aieuiui iaiiiiiaioii iiaiaeeanu eiinaioiieanoeea. A 2,4% neo/aaa a iineaiiaaoeiiiii iaeiaa ioia/aii acaeoea neiaoee. Ieiaiaiea iieoiiaiaieeiauo aunieiyiaaeoe/aneeo eacaia a ea/aiee oiie/aneeo eieoia. R.Mladina et al (1991) inouanoaeyee 1 eee ianeieuei NI2 eacaiuo aicaaenoaey (10 Ao 7-10 nae, aeaiao eo/a 3 ii) a iaeanoe iaaeaeuii-aaoiaai eaaaaioa iaaaiaai eiioa ieaeiae iiniaie aeiaeiu. Oiioea ooieoeiiaeuiua acoeuoaou iieo/aiu a 69 neo/ayo ec 78 e iiaoaaaeaaiu ooieoeiiaeuiuie iiaaie. Eoae, NI2 eaca iicaieyao iaieioeeiaaou oieuei a iaeanoe iaaaiaai eiioa ieaeiae iiniaie aeiaeiu, iieiinou ia enee/aao ene acaeoey eiaioa/aiey. Iaiaoiaeiinou iiaeiaaou aenoaioii oaaoao ieiaiaiey aiiicaeeo iaieioeyoiia e naanoa caueou iaoeaioa e aaaea oeoaa, iaieia, iaaeaaaaony iiaeiaaou a iieuo oeii/aoiaoiaaeiuo ia/aoeao. H.L.Levine(1992) eniieucoao aey eiioioiiee EO eaca, neaaea anoieoneiaaiiui eo/ii ie 5-8 Ao iaiineo iaaeaueaaueany eeiee ii anae iiaaoiinoe aeiaeiu. Iaaieuoea o/anoee yieoaeey iaaeao iaianaiiuie eeieyie aaiiecaoee yaeyony enoi/ieeii ayieoaeecaoee ie caaeeaeaiee. P.Rosles et al (1999), P.Janda et al (1999) n oniaoii eniieuciaaee aey eiioioiiee Ho:YAG eaca n aeeiie aieiu 2100ii. Yiaaey eacaa ainoaaeyaony ii naaoiaiao. Iaeiia/iee iicaieyao iieo/eou ecaea eiioaaie /anoe io 5 ai 50 aaaonia. Lenz H. e niaao. a 1984 aiao ieiaieee ie ea/aiee oiie/aneeo aeiaoioe/aneeo e aaciiioiiuo eieoia eceo/aiea aaiiiaiai eacaa n iiuiinou ia auoiaa iaieioeyoia 4 Ao. Aenoaioii iaiineee ai 10 oi/a/iuo eiaaoeeoueo aicaaenoaee ia neecenoo iaiei/eo ieaeieo iiniauo aeiaei a oa/aiea 2 - 5 iei. Iienai e aieaa aaeeaeuiue niinia ea/aiey aaciiioiiiai eieoa, caee/aueeny a eacaiie yeoiiee aeaeaaa iaaa oainiaeneeeyiui ainooiii (Williams J.D. 1983). A EI - eeeieea NIaAIO ei. aeaa. E.I.Iaaeiaa eacaiia eceo/aiea aiiaaoa "aaoaa - 1" ie ea/aiee oiie/aneeo eieoia eniieucoaony n ia/aea 80-o aiaia. Ie oiie/aneeo eieoao iaaiaou e oaoieea eacaiiai aicaaenoaey iaaiiaaaeyeenu oiiie iaoieiaee e yooaeoeaiinou iaaoanoaouaai ea/aiey. Ea/aiea oiie/aneeo aeiaoioe/aneeo eieoia iiaiaeony iooai eacaiiai enna/aiey aeiaieaceiaaiiuo oeaiae, aee/ay iieeiu, eiioaeoiui niiniaii ie auoiaiie iiuiinoe ia einineieioii oioa iiiiaieieia ai 4-6 Ao. Ie aaiiie oiia eieoa iiaeao auou eniieuciaai iaoia eacaiie iianeecenoie eiaaoeyoee iiniauo aeiaei n iiuiinou ia auoiaa aieieia 6-8 Ao. Iaoia oiioi naay caaeiiaiaiaae, e iicaieyao iiaeiaaou aieuiuo a aiaoeaoiiuo oneiaeyo, iineieueo ia niiiaiaeaaaony eiaioa/aieai e auaaeaiiui iineaiiaaoeiiiui ainiaeaieai. Ie aiaeeca acoeuoaoia eacaiie oeoaee iaei-aaaaoaoeaiie oiiu aaciiioiiuo eieoia o 126 aieuiuo /aac 2 aiaa a 100 neo/ayo nioaiyeny oiioee yooaeo ea/aiey, /aac 2 aiaa - o 88 aieuiuo nioaiyeny noieeee iieiaeeoaeuiue acoeuoao (A.I.Aaaaoc 1988). E niaeaeaie, a eeoaaooa iu ia iaoee aaiiuo ia yooaeoeaiinoe iieoiiaiaieeiauo eacaia a ea/aiee oiie/aneeo eieoia. Iieoiiaiaieeiaue eaca, aeeia aieiu eioiiai aeecea e eioaeaniui aieiai, aaniaeoaony eiau. Aeoaeia iiieeiiaaiey a iyaeea oeaie nouanoaaiii aieuoa, /ai NI2 eacaa, n aai iiiiuu iiaeii inouanoaeou acac, aaiiecaoe, eiaaoeyoe oeaiae. Iu ieiaieee aey aicaaenoaey ia neecenoo ieaeieo iiniauo aeiaei iieoiiaiaieeiaue aunieiyiaaaoe/aneee eaca "Atcus-15". Onoaiiaea acaaioaia e auiieiaia oeiie "Iieoiiaiaieeiaua ieaiu" e iaaiacia/aia aey iaeieiaaceaiie eiioaeoiie eiaaoeyoee oeaiae. Aiiaao ninoieo ec aaoo aeieia - iioe/aneiai aeiea e yeaeoiiiiai aeiea oiaaeaiey, iioe/aneiai einooiaioa e iaaaee. Iioe/aneee aeie iaanoaaeyao niaie iioeei-iaoaie/aneo naieo, ninoiyuo ec 8-ie 3-o aaooiuo eacaiuo aeiaia n oieoneoueie iauaeoeaaie, ioaaeauae ieaieau, iioe/aneiai acuaia, 8-ie Iaeuoua-yeaiaioia n aniieiaeaiiuie ia ieo oaienoiaie. Aiiaao iicaieyao aaioaou eae a eiioeuniii, oae e a iaiauaiii aaeeia. Aeaiacii aaoeeiaaiey auoiaiie iiuiinoe eacaiiai eceo/aiey aiiaaoa a iaiauaiii aaeeia io 0,5 ai 15 Ao, aeeia aieiu eceo/aiey - 0,81+0,03 iei, aeeoaeuiinou eiioeunia eacaiiai eceo/aiey io 0,05 ai 10 naeoia. Ie aaciiioiiuo eieoao oaeaniiaacii ieaaaeeaaouny iineaaiaaoaeuiie oaeoeee "step by step". Ia iaaii yoaia iaiinyo 1-2- eaoiia oi/a/iia aicaaenoaea (eiioaeoii eee aenoaioii) ia Ieiaiaiea iieoiiaiaieeiauo aunieiyiaaeoe/aneeo eacaia a ea/aiee oiie/aneeo eieoia. aoeaeniaaiiua ciiu neecenoie iaiei/ee iieinoe iina anoieoneiaaiiui eo/ii aeiaiiai eacaa n auoiaiie iiuiinou ia oioa naaoiaiaa 4 Ao (aoeaeniaaiiua ciiu iaacoony ec noa- e eioayieoaeeaeuiuo nieaoaiee oieie/iiai, neiiaoe/aneiai e iaaneiiaoe/aneiai iaaia a iaeanoe iaaaieo, caaieo e io/anoe naaieo ioaaeia ieaeieo e naaieo iiniauo aeiaei). Anee aaiiay noaia ea/aiey ia ieaiaeo e aieaeiiio eeeie/aneiio yooaeoo, iaiaoiaeii aaeeciaaou aoiie iaoiae/aneee ieai, caee/aueeny a iiaaaaiee eiaaoeeouaai eiioaeoiiai eacaiiai aicaaenoaey aaieu anae ieaeiae eee naaiae aeiaeiu ie iiuiinoe ia auoiaa iiiiaieieiiiiai naaoiaiaa n eininacaiiui oioii ai 6 Ao e neiinoe aai iaaaaeaeaiey 1,0 - 1,5 ni/n. Anee /aac ianyo e yoio ieai ia ieaiaeo e aeaeaaiui acoeuoaoai, iaiaoiaeii inouanoaeyou iianeecenoo eacaio eiaaoeyoe ie iiiiue eceo/aiey ia auoiaa iiiiaieieiiiiai naaoiaiaa ai 8 Ao. Aey yoiai neiiaoe/ii nacaiiui oioii iiiiaieieiiiiai naaoiaiaa iiecaiaeony ioieoey neecenoie iaiei/ee iaaaiaai eiioa ieaeiae iiniaie aeiaeiu, a caoai iiiiaieieii iiaiaeony aaieu anae aeiaeiu ni neiinou 0,5 - 1,5 ni/n, ia aioiay 0,5 ni ai aa caaiaai eiioa. A iineaiiaaoeiiiii iaeiaa iaaeaaaony iaeioiia iainoaiea a oa/aiee eieoa, naycaiiia n aaeoeaiui ainiaeaieai neecenoie iaiei/ee iieinoe iina. A oa/aiea iaaaee iieacaii ieiaiaiea neiaeiuo eaiaeu, aee/aueo anoeoaeuiia ianei, ninoainoaeeaauea eaiee, aioeaeioee. A yoio aea iaeia aey oiaiuoaiey aaeoeaiuo yaeaiee a iieinoe iina oaeaniiaacii eniieuciaaou eacaio aaeee iaiiiao oeceioaaie a iioeaiainiaeeoaeuiuo aicao. N ieiaiaieai iieoiiaiaieeiaiai eacaa auei iiiiaeiaaii 46 aieuiuo oiie/aneeie eieoaie. Ie a iaiii neo/aa ia iaaeaaeinu oiieiaaiea eiie a iieinoe iina iinea iiaaoee, ia auei eiaioa/aiee. Ana iiaaoee iiaiaeeenu aiaoeaoiii e ia ieaiaeee e iioaa ooainiiniaiinoe. Ioaaeaiiua acoeuoaou eacaiie eiioioiiee Oei eacaa aaoi % oiioeo ioaaeaiiuo acoeuoaoia NI2 N.Sudo 1983 81 NI2 A.A.xeaoeei 1990 92 CO2 R.Mladina 1991 88,4 CO2 S.G.Selkin 1994 93 CO2 M.Englender 1995 93 CO2 B.M.Lippert 1998 79,6 KTP H.L.Levine 1992 92 Ho:YAG P. Janda 1999 86 Nd:YAG B.M.Lippert 1998 68,3 Nd:YAG M.N.Ieoaeieeia 1991 79,3 Nd:YAG A.I.Aaaaoc 1988 "AOEON-15" I.N.Ieoaeieeia 2000 80 83,2 Ieiaiaiea iieoiiaiaieeiauo aunieiyiaaeoe/aneeo eacaia a ea/aiee oiie/aneeo eieoia. Eacaiay oeoaey oiie/aneeo eieoia iaeaaaao yaii i/aaeaiuo iaeiouanoa: iiaaoey iiaiaeony aaneiaii, aacaieaciaiii, ia oaaoao oaiiiiaau iieinoe iina e iaauaaiey aieuiiai a noaoeiiaa. A iineaiiaaoeiiiii iaeiaa a iaiuoae noaiaie iaacoony eiee, aiuoa iaaeaaaony caaeeaeaiea. Eacaiay oeoaey yaeyaony iaaaaeiui iaoiaii ea/aiey aeiaoioe/aneiai e aaciiioiiiai eieoia. Iaiaoiaeii caiaoeou, /oi anou iiaaaeaiiay caaeneiinou iaaeao yooaeoeaiinou acee/iuo iaoiaia eacaiie oeoaee e aaaiinou caaieaaaiey. Iaeaieuoaa iaaii/oaiea, ia iao acaeya, neaaoao ioaaou eiioaeoiiio eacaiiio aicaaenoae, iineieueo iii iioeiaeuii ni/aoaao a naaa aunieo yooaeoeaiinou e oaianoai aey oeoaa. Ieiaiaiiue iaie a iineaaiaa aaiy iieoiiaiaieeiaue eaca iieacae yooaeoeaiinou niiinoaaeio n eiioaeoiui Nd:YAG eacaii. Eiia oiai, onoaiiaea "AOEON-15" iaeaaaao yaii iaeiouanoa iaeaa/aueo aaioo oeoaa: eiiiaeoiinou ieaia, ionoonoaea aiayiie iiiiu, niioaaonoaaiii aiciiaeiinou aaioaou a acee/iuo iiiauaieyo, aanooiiinou, iinoioa yenieoaoaoee, aiciiaeiinou a iioanna aaiou iiiaiyou aaeei (eiioeuniue, iaiauaiue) e iiuiinou eceo/aiey, iaee/ea aao/eea, oeeneouaai iauo iiaieaeeoaeuiinou eiioeunia, /oi iicaieyao a aaeuiaeoai aiaeeceiaaou iiaaaaiiua aiaoaoaeunoaa. EEOAAOOA 1. Aaaaoc A.I. IEAA - eaca a ea/aiee aaciiioiiiai eieoa. Aaoiao. aenn. .. eaia. iaa. iaoe. Eaieiaaa. 1988. 20 n. 2. Ianaaeei A.I., Aa/aa N.A., Caiaa A.A., Oanoaeia A.A., Enaaa I.I., Oaeaeaaa A.A. Yeniaeiaioaeuiia e eeeie/aneia iainiiaaiea ieiaiaiey oeoae/aneiai aieuieaaiai eacaa a ioieiieaeiaieiaee. // Eacaiay Iaaeoeia. 1997. o. 1, a. 2, n.18-22. 3. Ieneoiia N.C. Ooieoeiiaeuiay aeaaiinoeea e ea/aiea acee/iuo oii eieoa. Aaoiao. Aenn... aieo.iaa.iaoe. I.-1986. 4. Ieoaeieeia I.N., Eaaiia A.N., Aaaaoc A.I. IEAA-eaca a ea/aiee aaciiioiiuo eieoia // Aeooaeuiua aii. ioieiieaeiaie. Ynoiineie NN.- Oaeeei, 1986.- N.57-58. 5. Ieoaeieeia I.N., Eiiioei A.E., Aaaaoc A.I. Eacau a eiioaeiaieiaee.- Eeoeiaa, 1991.- N160. 6. Ieoaeieeia I.N., Eiiioei A.E., yaiaa I.A. Eacaiay oeoaey a ioieiieaeiaieiaee. Ieine-2000.- N103-113. 7. Elwany S., Abdel-Moneim M.N.Carbon dioxide laser turbinectomy. An electron microscopic study. J.Laryngol Otol (UK) Oct 1997 111 (10) p 931-934. 8. Englender M. Nasal laser mucotomy (L-mucotomy) of the inferior turbinates. // The Journal of Laryngol. And Otology. April 1995, v. 109, p. 296-299. 9. Grossenbacher R. Laserchirurgie in der Oto-Rhino-Laryngology. Stuttgart. New York. Thiewe. 1885.79s. 10. Grymer L.F., Illum P., Hilberg P. Septoplasty and compensatory inferior turbinate hypertrophy. A randomized study evaluated by acoustic rhinometry. // 1993. - J. Laryngol. Otol. V. 107, p. 413-417. 11. Janda P., Sroka R., Baumgarter S., Cirevers G., Leuning A. Holmium: YAG - Laser treatment of hiperplastic inferior nasal turbinates. // Las. Surg. Med. 1999, suppl. 11, p. 48, 205. 12. Jones N. Lasers in rhinology. // Lasers in ENT. 1999, v.8, 4, Sept./Oct., p.19. 13. Levine H.L. Rhinologic surgery. // KTP/YAGTM clinical Updates in Otorhinolaryngology, 1992. -p.6-8. 14. Levine H.L. Rhinologic surgery. // KTP/YAGTM clinical Updates in Otorhinolaryngology, 1992. -p.6-8. 15. 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In: The CO2 Laser in Otolaryngology and Head and Neck Surgery Ed. Oswal V.H., Kashima H.K., Flood L.M. publ.Wright . 1988. 200p. 21. Selkin S.A., Roussos C.L. Rhinoseptoplasty and partial superior turbinectomy. The CO2 laser and bipolar cautery compared. // International Journal of Aesthetic Surgery., v.2, 2, 1994, p. 119-124. 22. Selkin S.G. Pitsalls in intranasal laser surgery and how to avoid them. // Arch. Otolaryngol. Head Neck Surg. -v. 112, March 1986. 23. Williams J.D. Laser vidian neurectomy. Ann. Otol. St. Lous. 1983. 92 (3) p.281-283. 24. Wolfson S., Wolfson L.R., Kaplan I. CO2 laser inferior turbinectomy: a new surgical approach. J. Clin. Laser. Med. Surg. (US) Apr 1996 14 (2) p 81 - 83. Please use BACK button of your browser or Go to Main ATC-SD Medicine Page Selective laser hyperthermia of malignant neoplasms - Article to SPIE Selective laser hyperthermia of malignant neoplasms: experimental and clinical research M.L.Gelfond1, I.V.Mizgirev1, A.S.Barchuk1, V.V.Hudoley1, D.V. Vasilyev1, F.V.Balluzek2, A.A.Venkov2, V.P.Chaly3, A.L.Ter-Martirosyan3 1N.N.Petrov Research Institute of Oncology, 2Medical Academy for Postgraduate Education, Devices", Saint-Petersburg, Russia. 3"ATC-Semiconductor ABSTRACT Experimental study of various modes of the semiconductor laser irradiation upon Ehrlich carcinoma in mice was carried out. Optimal patterns for distance laser scanning irradiation resulting in practically complete healing of experimental animals, were found. Selective damage of tumor tissue subjected to laser irradiation at 800 nm was evidenced in the absence of a photosensitising agent. The results of a clinical trial completely corresponded to the experimental data. The treatment proved to be efficient in all 28 patients. Keywords: semiconductor lasers, hyperthermia, malignant neoplasms 1. INTRODUCTION Clinical applications of laser technologies today are becoming more routine in treatment of both malignant and benign neoplasms. Nd:YAG lasers have proved to be an effective surgical instrument for coagulation and incisions, for haemostasis and prevention of postoperative pain1. At the same time, the usage of solid state laser is inconvenient due to the indispensable water cooling, the necessity of field lines, considerable size and weight of an apparatus. Therefore, the introduction of semiconductor (diode) lasers became a very important event in the clinical practicing. These lasers are powerful enough, but at the same time are portable, air cooled, require ordinary electric lines. Preliminary comparative experimental studies of the effect of neodim and semiconductor lasers upon biological tissues revealed certain differences. It is important that a semiconductor laser emitting at 805 nm causes a smaller area of vaporization and of coagulation necrosis around the face of the fiber. Besides, the diode laser irradiation results in a larger area of hyperthermia, which provokes the thermal necrosis of the tumor2. Nowadays, laser induced thermotherapy (LITT) is widely used in oncology to treat benign and malignant neoplasms of various localization3-5. Recent studies in this field of laser medicine are dedicated to the increase of hyperthermia efficiency resulting from the improvement of the irradiation parameters (the method of thermooptical feedback), but also from using various optical headers and cooled fiber face6-8. 2. MATERIALS AND METHODS A clinical trial of a pilot specimen of semiconductor laser model ATC-2550 (manufactured by "ATC-Semiconductor Devices") were accomplished in the N.N.Petrov Research Institute of Oncology. Ehrlich carcinoma was used as an experimental model. Tumor cell suspension was injected intracutaneously in one leg and in the back of inbred mice (three injection nodes per animal). The tumor growth period was 6-7 days. By that time, the tumor nodes varied in size from 6x6 mm to 8x8 mm. The following laser device emitting at 800 nm were used in the experiments: Selective laser hyperthermia of malignant neoplasms - Article to SPIE 1. Single diode laser with optical focusing system and regulated output power from 0 to 950 mW 1. Six diode laser with regulated output power from 0 to 2.2 W. Animals of 22-26 g were intraperitoneally injected 0.2 ml of 20% sodium oxibutirate solution to achieve efficient anaesthesia, after which they were irradiated in a scanning mode. The size of each single irradiation field was 5? 5 mm and 7.5? 7.5 mm. The total area irradiated was 15? 15 mm (9 and 4 fields, respectively). Exposure time varied from 29 sec to 5 min. The following irradiation schemes and modes were used: 1. The laser output power was 950 mW. There were 9 irradiation fields of 5? 5 mm each. Exposure time was 2, 3, 4 and 5 min for each field. 1. The laser output power was 950 mW. There were 4 irradiation fields of 7.5? 7.5 mm each. Exposure time was 6 min 45 sec and 11 min 15 sec for each field. The absorbed dose was the same as in the first scheme due to the increase of exposure time. 2. The laser output power was 950 mW. There were 9 irradiation fields of 5? 5 mm each. Exposure time was 3 min for each field. The second irradiation session was performed in 48 hours. 3. The laser output power was 950 mW. There were 9 irradiation fields of 5? 5 mm each. Exposure time was 3 min for each field. The treatment course consisted of 3 sessions separated by a 48-hour interval. 4. The laser output power was 2 W. There were 9 irradiation fields of 5? 5 mm each. Exposure time was 30, 60, and 90 sec for each field. The irradiated surface was fanned with air at a speed of 1.5 l/min (t =23 C) to increase the heat interchange and to study its input into the temperature increase in the tissues. At least 10 animals were included in each control and experimental group. 800 mice were used in total. 3. RESULTS OF EXPERIMENTAL STUDIES Our results demonstrate that the main damaging constituent of semiconductor laser irradiation applied to the malignant neoplasms is the local hyperthermia resulting from partial absorption of the irradiation. The temperature was measured by thermal resistor microelement MT-54 (produced by SKB Agrophysics SRI), connected to the digital ohmmeter U-4300. The number of measurements for every time point ranged from 6 to 10, depending on the experimental series, and on rate at which the thermal balance of the system was achieved. Mean values and standard deviations were calculated for each point. It was found that after 5 and 10 min of irradiation the temperature of the tumor surpasses that of the skin by 5 C and 10 C, respectively, and mounts to 59 C. Each decrease of irradiation power by 0,25 W results in a respective 5 C drop of the tumor temperature after a 10-min exposure. Similar results are observed when the power density is decreased by enlargement of the irradiation field surface. Upon cooling the tissues by air-fanning the temperature decreased by 5 C both in tumor and in the intact tissues, the same temperature gap of 5 C between tumor and skin remaining. However, the temperature stabilization was achieved more rapidly. The analysis of the effect of the treatment under various irradiation patterns showed the following: Pattern 1: No effect is observed when the irradiation power is 950 W and the exposure time is 2 min. 48 hours after a 3 -min irradiation the tumor is absent in 30% of the animals, after 4 and 5 - min exposures the respective figure is 90%. Flat crusted ulcers replaced the tumor nodes. At the same time, in 2 months 80% of the animals irradiated for 4 min suffered from recurrence of the tumor. However, the tumors recurred or continued to grow only in 40% of the mice irradiated for 5 min. Pattern 2: Despite that the decrease of power density was compensated by a prolonged exposure (6 min 45 sec and 11 min 15 sec), no significant therapeutic effect was observed. Selective laser hyperthermia of malignant neoplasms - Article to SPIE Pattern 3: 48 hours past the second irradiation session there were no visible signs of tumor growth in 92% of the animals. Pattern 4: 48 hours past the third irradiation session there were no visible signs of tumor growth in 83% of the animals. Pattern 5: 48 hours past the 30-sec irradiation session the tumor continued to grow in 90% of the animals. 100% of the animals did not have any signs of the tumor within 48 hours following 60 and 90-sec long irradiation. The following macroscopic tissue reactions after effective irradiation patterns were present. Oedema and pallor of the surrounding tissues were observed in 30 min - 3 hours. Necrosis of tumor and skin over the tumor node developed in the first 24 hours. Later, flat ulcer covered with crust developed in the place of the tumor. The ulcer size differed and corresponded to the size of the tumor node. This can be explained by the selectivity of the effect. The highest selectivity was observed after 4 or 5-min exposure with laser irradiation output power of 950 W and after 1 minute exposure with 2 W output power. Multiple irradiation sessions were approximately 40% more effective than a single session. As already mentioned, hyperthermia was the main tumor-damaging effect of semiconductor laser. This is evidenced by comparison of the experimental results in the animal groups differing in air-fanning of the irradiated surface. It seems evident that if the damaging mechanisms were other than the thermal lesion (e.g. excessive accumulation of endogenous porphyrines in the tumor cells) an additional way of heat dissipation would not have affected the results. The fundamental difference in the results obtained on tumors engrafted in the foot as compared to those provoked by subcutaneous injections in the back speaks in favor of our assumption. In the first case, regardless of much longer direct laser irradiation (the maximum exposure time was 30 min while the subcutaneous tumors on the back were irradiated for 5 min ad maximum), only superficial burns were obtained with no effect upon the neoplasm, and in a few cases complete disruption of the limb tissues was observed after maximum exposure. In contrast, with the tumor grafted subcutaneously in the back, a 5-min exposure was sufficient to destroy the tumor tissues. These facts can be explained in the following way: when grafted in the foot, the tumor replaces almost all its volume and, therefore, is almost completely subjected to the ambient temperature, which is much lower as compared to that of internal tissues of the organism. Besides, the limbs in mice have a high thermoregulaion ability, since they are in permanent contact with surfaces that may have temperatures differing in a wide range. When the tumor is grafted subcutaneously in the back, it mainly adjoins the internal tissues of the organism and, hence, has a higher temperature than the one engrafted in the foot. Therefore, when applying external heat (e.g., by laser irradiation) to the tumor engrafted subcutaneously in the back, one will obtain higher temperature, than in the tumor grafted in the foot. There is another important aspect to be taken into account when interpreting the results of the presented work: the irradiated region is cooled by blood flow. One should consider that blood circulation in the tumor tissue is hindered due to blood vessels malformation9, 10. Thus, the heat dissipation in tumor might be lower than in normal tissues. This may result in a more pronounced heating of the tumor irradiated by laser. Actually, direct temperature measurement of the irradiated region revealed that after 5 min of exposure the tumor tissue is heated 5 C higher than normal tissues (skin) on average. It seems lilkely that this phenomenon underlies the selective tumor tissue damage observed in some experiments. Particularly interesting is the analysis of the results in the animal group with an extremely high selectivity of the tumor tissue damage. The mechanism of this phenomenon can be as follows. During the first irradiation session the capillary blood flow in the tumor gets arrested and microscopic necrotic areas varying in depth of their localization are formed. Normal tissues are not affected. During the second session these areas are heated to a somewhat higher degree due to the absence of the circulation, of which poor thermal interchange is the result. This, in turn, leads to a significant heating of the surrounding tissues due to the heat transfer. When the tumor nodes are relatively small (up to 10? 10 mm), as it was in our study, the areas of necrosis completely correspond to the tumor limits after the third irradiation session. At the same time there are no such necrotic areas in the normal tissues with good circulation and these tissues stay unaffected. Our most important goal can be outlined as revealing the regularities that allow to predict a therapeutic effect in correlation both to the parameters of laser irradiation and to the exposure time, as well as the Selective laser hyperthermia of malignant neoplasms - Article to SPIE thermal effects arising from the absorption of laser energy by a particular tumor. If such a regularity is linear, one can use the obtained results to develop a mathematical model and to compute the irradiation parameters for a laser of any non-therapeutic output power. At the same time one of the main approaches that helps to increase the efficiency of treatment is an artificial augmentation of the selectivity of laser energy absorption. This can be achieved by increasing the output power of an apparatus, by irradiating the surrounding tissues to arrest blood circulation or by multiple scanning of the tumor node. There are also other solutions for the problem. 4. PRELIMINARY CLINICAL STUDIES Clinical trial of laser-induced tumor thermotherapy was performed in N.N. Petrov Research Institute for Oncology on volunteers who had histologically documented neoplasms of various origin and localization. These studies were based on the results of experimental research described above. Semiconductor laser with regulated output power ranging from 0 to 5 W was used. The irradiation was delivered to the affected object via a fiber of 600 m m in diameter. The clinical studies were performed according to the specially developed protocol. 29 patients were treated from May to September, 1998. Patients with tumors of various localization were included in the group to elaborate the irradiation patterns and technique. The following nosologic forms were presented: basocellular skin carcinoma ? 13 cases, squamocellular skin carcinoma ? 2 cases, skin melanoma ? 7 cases, breast cancer ? 3 cases, recurrence of bronchial carcinoma ? 1 case, bronchial carcinoid ? 2 cases, lymphosarcoma ? 1 case. Along with the interstitial hyperthermia we used distance laser scanning of tumors. The method of interstitial hyperthermia is largely used in clinical practice. According to this method the fiber is driven inside the node to achieve coagulation and often even carbonization of the surrounding tissues. When performing distance laser scanning the irradiation power density was selected so that tumor temperature would increase to 45-60 C. Air bubbles were formed in the blood vessels of the tumor (gas phase) and the interstitial fluid drooled from the node (liquid phase). In the following irradiation sessions the density of irradiation power had to be decreased to avoid coagulative necrosis and carbonization of the tissues due to the loss of the fluid by the tumor and the increase of its thermal conductivity. These effects had been previously observed in experiments. Already after 24 hours we evidenced a significant contraction of tumor along with haemostasis and thrombosis accompanied by circulation impairment in it. The subsequent irradiation sessions enhanced these changes, leading to a complete or significant lysis of the tumor tissues. Some clinical observations and results of laser thermotherapy in patients are presented below. 4.1. Laser thermotherapy in patients with basocellular skin carcinoma The distance scanning method was applied with the field size of 0.5 cm. Irradiation parameters are presented in Table 1. By the end of the irradiation session we observed the oedema and the change in the color of irradiated tissues. Laser irradiation power was decreased for the second session to avoid coagulative necrosis with cabronization of the affected surface. Upon completion of the treatment there was a crusted ulcer with smooth edges in the place of the tumor. The ulcer was rapidly covered with epithelium, leaving almost an imperceptible cicatrix. This method turned out to be very efficient in treatment of multiple skin basaliomas. There were 16 skin basaliomas in one patient, all of which were successfully cured by laser thermotherapy. Table 1: Laser Irradiation parameters for skin basaliomas treatment Irradiation sessions Irradiation parameters Irradiation power, W 1 2 3 4 5 2.0 2.0 1.5 1.5 1.0 Selective laser hyperthermia of malignant neoplasms - Article to SPIE Irradiation field diameter, cm 0.5 0.5 0.5 0.5 0.5 Number of irradiation fields 10 10 10 10 10 6 5 3 3 3 Power density, W/cm2 10 10 7.5 7.5 5 Energy density, kJ/cm2 3.6 3.0 1.4 1.4 0.9 Irradiation duration, min 4.2. Laser thermotherapy in patients with skin cancer In case of skin cancer laser hyperthermia was performed according to the contact method. E.g., recurrent intracutaneous tumor node was irradiated in patient K. after Krail operation. The fiber was driven into the center of the tumor node. Irradiation power at the tip was 3.8 W, exposure time was 4 min. In 24 hours the tumor node size grew down from 2.5 to 1.8 cm, and after 3 days the node was rejected leaving an ulcer of 1.8 cm in diameter in its place. The walls of the ulcer were covered with necrotic patch. Cytologically no tumor cells were detected in the material obtained from walls and fundus of the ulcer. In two weeks shrinkage of the ulcer and multiple granulations were observed. Similar results were obtained in the second patient suffering from skin cancer on the back. 4.3. Laser thermotherapy in patients with skin melanoma The protocol included 7 patients with histologically documented skin melanomas of various localization. The following clinical observation is the most illustrative. Patient Sh., 74 years old, was admitted to the clinical ward with a skin melanoma 3.2? 3.0? 3.0 cm on the left shin. Perifocal skin inflammatory alterations occupied the full middle third of the shin. The scanning protocol of laser thermotherapy with 0.5 cm-1.0 cm irradiation field diameter was applied. Irradiation parameters are presented in Table 2. In the process of treatment the patient felt tolerable burning in the irradiated area. In 10-15 sec after irradiation started the fading of the color of the tissues and the release of air bubbles were observed. In 24 hours the height of the tumor decreased by 1.0 cm. After the second and the third sessions the tumor shrank by 2.0 cm in diameter and by 1.0 cm in height. In the third session the feeling of burning became more pronounced and, therefore, irradiation power was decreased threefold with concomitant increase of the field size to 1.0 cm. In two weeks during control examination no marks of tumor were found in the irradiation area, the inflammatory changes in the skin reduced. The patient was operated. The excision of skin flap in the place where the neoplasm had been found previously was performed. Microscopic clumps of thermally affected melanoma cells were found in the reticular layer of derma upon histological study, with evident inflammation and lymphohistiocytic infiltration. Table 2: Irradiation parameters and treatment technique in patient suffering from skin melanoma Irradiation sessions Irradiation parameters Irradiation power, W 1 2 3 3.0 2.5 1.2 Selective laser hyperthermia of malignant neoplasms - Article to SPIE Irradiation field diameter, cm 0.5 0.5 1.0 Number of irradiation fields 10 10 10 6 5 3 Power density, W/cm2 15 12.5 6 Energy density, kJ/cm2 5.4 3.8 1.1 Irradiation duration, min It should be emphasized that high content of melanin in tumor increases the absorption of irradiation by the superficial layer of the tumor. It leads to carbonization of this layer that starts impeding the irradiation and, thus, hampers the heating of the rest of the tumor. When treating skin melanomas with high pigment content, power density on the neoplasm surface should be decreased with the exposure prolonged. Later in our work we took this fact into account and the efficiency of thermotherapy incerased significantly. 4.4. Laser thermotherapy in patients with breast cancer The protocol included 3 patients suffering from histologically documented nodulous breast carcinoma on IIIb stage. All the patients were subject only to laser-induced thermotherapy. Irradiation was performed according to the scanning pattern with a special optical system or fiber directed at various angles towards the skin surface. The output laser power was 3-4 W, power density on the skin surface was 15-20 W/cm2. Exposure time for each irradiation field was 5 min, energy density per field was 4.5-6.0 kJ/cm2. By the third session the tumor grew significantly smaller and by the tenth it reduced twofold. As judged by the results of ultrasonic examination, the tumor density was equal to such of connective tissue. The following case can be presented as an example. Patient G., 77 years old was examined in the Research Institute for Oncology. Nodulous carcinoma of the left breast with ulceration of 5 cm in diameter and multiple intracutaneous metastases was found. Histological examination revealed low-differentiated adenocarcinoma. Surgery could not be the choice due to pervasion degree and associated diseases. Diode laser thermotherapy was started. The treatment was performed according to the distance pattern. Power density at the surface was 15 W/cm2. 10 fields were irradiated with exposure time of 1 minute per field. Power density per field was 0.9 kJ/cm2 in total. By the third session due to severe impairment of circulation in the tumor and the increase of its thermal conductivity the power density was decreased to 3.8 W/cm2 and exposure time was prolonged to 2 min per field. Thus, the power density per field was 0.4 kJ/cm2. According to the results of control mammography performed one month past the beginning of the treatment the tumor dimensions reduced twofold. Mammography results before treatment and after tenth laser thermotherapy session are presented in Figures 1-2. Currently, taking into account the effect obtained, the treatment is being continued. There are no visual signs of tumor and the dimensions of intracutaneous metastases grew significantly smaller. 4.4. Laser thermotherapy in patients with other tumors Both contact and distance irradiation patterns were used to treat bronchial carcinoid and recurrent bronchial cancer after pneumonectomia. Full regression of neoplasms was obtained. One patient with upper jaw lymphosarcoma was successfully treated by laser induced hyperthermia after unsuccessful chemo- and radiotherapy. Figures 3-4. 5. CONCLUSIONS Therefore, the results of clinical semiconductor laser thermotherapy trial of malignant neoplasms of various localization fully correspond to the presented experimental results as well as to the results that we obtained previously for solid state laser interstitial hyperthermia11. Laser-induced distance pattern thermotherapy of tumor results in selective tumor hyperthermia with temperature ranging from 45 C to 60 C and subsequent tumor lysis. Presently we keep improving the parameters of laser irradiation and medical Selective laser hyperthermia of malignant neoplasms - Article to SPIE technologies for thermotherapeutical treatment of neoplasms of various localization are being developed. 6. ACKNOWLEDGEMENTS The authors of this work would like especially to thank the following organizations: 1. The Ministry of Science of Russian Federation 2. St.Petersburg Regional Foundation of Scientific and Technical Development 7. REFERENCES K.Leggatt. "Medical Lasers Are at the Threshold of a New Era" //Biophotonics International - 1998.-Sept.-Oct.-pp.42-46. A.Wyman, H.M.Sweetland, F.Sharp, K.Rogers. "Preliminary evaluation of a new high power diode laser" //Lasers in Surgery and Medicine- 1992.-v.12.-pp.506-509. D.Albrecht, Th.Germer, C.Isbert et al.//Digestive Disease Week. The Society for Surgery of the Alimentary Tracts.-Abstr.-1997. D.H.Sliney, M.L.Wolbacsht.//Journal of the Royal Society of Medicine.-1989.-v.82.-pp.293-296. K.G.Tranberg et al. "Interstitial Laser Thermotherapy: Preliminary experience in patients" // SPIE.-1995.-PM25.-pp.468-476. K.G. Tranberg, K.Ivasson et al. "Interstitial laser thermotherapy using feedback control and monitoring with electrical impedance tomography; review of studies in vitro and vivo"//SPIE.-1995.-PM25.-pp.354-365. K.V.Prihodko, A.V.Belikov. "Application of thermooptical feedback in laser surgery" //Semiconductor and Solid State Lasers in Medicine. International Workshop.St.-Petersburg.-1997.-p.29. (in Russian) Dowlatshahi Kambiz, J.D. Baugert et al. "Protection of fiber function by para-axial fluid flow in interstitial laser therapy of malignant tumors" //Laser Surgery and Medicine.-1990.-10,N.5.-pp.322-327 J. Folkman. "Tumour angiogenesis"// In: Advances in Cancer Research, New York.-1974.- p. 331-356 L. Karlsson, M. Alpstein, K.L.Appelgren, N.G. Peterson "Intratumor distribution of blood flow and of vascular volume in transplantable rat sarcoma"// J. Cancer Res. and Clin. Oncol., 1980, n.3, v.98, p. 213-219. M.L.Gelfond, A.S.Barchuk, S.V.Kanaev "Endoscopic laser destruction in combined treatment of lung cancer"//Voprosi Onkologii.-1996.-o.42.-N.2.-n.37-39 (in Russian) Please use BACK button of your browser or Go to Main ATC-SD Medicine Page Selective laser hyperthermia of malignant neoplasms - Short version Selective laser hyperthermia of malignant neoplasms: experimental and clinical research M.L.Gelfond, A.S. Barchuk, A.V.Mizgirev, V.P. Chaliy, A.L. Ter-Martirosian N.N.Petrov Institute of Oncology, St.-Petersburg ATC- Semicondactor devices, St.-Petersburg Clinical applications of laser technologies today are becoming more routine in treatment of both malignant and benign neoplasms. Nd:YAG lasers have proved to be an effective surgical instrument for coagulation and incisions, for haemostasis and prevention of postoperative pain1. At the same time, the usage of solid state laser is inconvenient due to the indispensable water cooling, the necessity of field lines, considerable size and weight of an apparatus. Therefore, the introduction of semiconductor (diode) lasers became a very important event in the clinical practicing. These lasers are powerful enough, but at the same time are portable, air cooled, require ordinary electric lines. Preliminary comparative experimental studies of the effect of neodim and semiconductor lasers upon biological tissues revealed certain differences. It is important that a semiconductor laser emitting at 805 nm causes a smaller area of vaporization and of coagulation necrosis around the face of the fiber. Besides, the diode laser irradiation results in a larger area of hyperthermia, which provokes the thermal necrosis of the tumor. A clinical trial of a semiconductor As-Ga laser Atcus-15 (manufactured by ATC-Semiconductor Devices) were accomplished in the N.N.Petrov Research Institute of Oncology. Ehrlich carcinoma was used as an experimental model. Tumor cell suspension was injected intracutaneously in one leg and in the back of inbred mice (three injection nodes per animal). Our results demonstrate that the main damaging constituent of semiconductor laser irradiation applied to the malignant neoplasms is the local hyperthermia resulting from partial absorption of the irradiation. It was found that after 5 and 10 min of irradiation the temperature of the tumor surpasses that of the skin by 5 C and 10 C, respectively, and mounts to 59 C. Each decrease of irradiation power by 0,25 W results in a respective 5 C drop of the tumor temperature after a 10-min exposure. Similar results are observed when the power density is decreased by enlargement of the irradiation field surface. Clinical trial of laser-induced tumor thermotherapy was performed in N.N. Petrov Research Institute for Oncology on volunteers who had histologically documented neoplasms of various origin and localization. These studies were based on the results of experimental research described above. Semiconductor laser with regulated output power ranging from 0 to 15 W was used. The irradiation was delivered to the affected object via a fiber of 600 mm in diameter. The clinical studies were performed according to the specially developed protocol. 64 patients were treated. Therefore, the results of clinical semiconductor laser thermotherapy trial of malignant neoplasms Selective laser hyperthermia of malignant neoplasms - Short version of various localization fully correspond to the presented experimental results as well as to the results that we obtained previously for solid state laser interstitial hyperthermia. Laser-induced distance pattern thermotherapy of tumor results in selective tumor hyperthermia with temperature ranging from 45 C to 60 C and subsequent tumor lysis. Presently we keep improving the parameters of laser irradiation and medical technologies for thermotherapeutical treatment of neoplasms of various localization are being developed. Please use BACK button of your browser or Go to Main ATC-SD Medicine Page ATCUS-15 Semiconductor Laser in treatment of cutaneous vascular displasia ATNUS-15 Semiconductor Laser in treatment of cutaneous vascular displasia M.L.Gelfond N.N.Petrov Institute of Oncology, St.-Petersburg When taking into account only population morbidity and mortality structure, one may consider the problems of haemangiomas' diagnostics and treatment to be insignificant. However, it is very important to relief severe psychological stress experienced by parents and children, especially in process of pubescence. In the USA 40.000 children are born annually with haemangiomas and vascular dispasias. Haemangiomas can regress spontaneously, unlike the vascular displasias. This makes correct diagnostics very important in the newborn in order to choose optimal treatment tactics. Previously wait-and-see attitude was common. Nowadays, specialists tend to act more radically. Remarkable therapeutic and cosmetic affects can be achieved in early childhood after surgery or laser therapy, with the latter being the method of choice. Usually alexandrite, argon and dye lasers are used. YAG:Nd, CO2 and copper vapor lasers application is frequently complicated with skin burns and unpredictable cosmetic effects. Recently we started using photodynamic therapy (PDT). This method is based on photochemical reaction in process of photosensitizer and laser irradiation interaction. The vessel endothelium is damaged with subsequent thrombosis. Currently PDT is successfully applied in oncology practice. Assuming that the tumor vascular system is morphologically similar to the cutaneous zone of vascular displasias, we suggest that photodynamic reactions damage the vascular displasia's endothelium in the same way. 16 children and adults undergone PDT with good cosmetic effect. This method is patented in Russian Federation. Atcus-15 laser works both in continuous wave and pulse modes at 800 nm wavelength. It can be used to treat haemangiomas, vascular displasias, angiomas, capillary ectasias etc. The method is based on delicate sparing thermal vascular damage. Irradiation parameters were experimentally chosen and optimized. There are also intraoperative and postoperative methods of skin burns and scarring prevention. 45 patients were treated with a remarkable cosmetic effect. Please use BACK button of your browser or Go to Main ATC-SD Medicine Page Laser treatment cases Laser treatment cases This page is under costruction. Sorry for any inconvenience. Case 1. Tumour of the upper jaw. The patient had been ill since 1996. In that period of time 4 courses of the chemotherapy were realized however up to October 1998 the tumour was going on to progress, at that it extended on the antrum of Highmore and covered all the left chick. In October he applied for help. 8 cycles of the hyperthermia by the contact transdermal method were made. The tumour sharply decreased in its dimensions, it isn't palpated, the metastasis are absent. The condition of the patient is satisfactory. The active observation is going on. Laser treatment cases Case 2. Female patient of 75 years old, was inspected at the out-patient treatment in the polyclinic of the Oncology Research and Development Institute. It was revealed the presence of the nodular swelling form tumour of the left mammary gland with the ulceration, the internal metastasis and the injury of the axillary lymph nodes on the left. The dimensions of the tumour are 43x30x50 mm. The histological diagnosis is a moderate differentiated adenocarcinoma. The cycle of the distant thermotherapy was begun on the 07.09.98. The cycles of the irradiation were carried twice a week. The first stage included 12 cycles. The second stage of the thermotherapy was begun in November of 1998. In accordance with the facts of the mammography before the second stage of the treatment the dimensions of the tumour decreased and constituted 15x20x30. By now the exophytic part of the tumour was healed. There is an ulcer with the bolster-like border of the dimensions 30x15 mm. The dimensions of the intracutaneous metastasis were essentially decreased. The part of them isn't determined by palpation. The course of the distant thermotherapy is going on. Laser treatment cases Please use BACK button of your browser or Go to Main ATC-SD Medicine Page Ieiaiaiea oeoae/aneiai iieoiiaiaieeiaiai eacaiiai eiaaoeyoia a einiaoieiaee Ieiaiaiea oeoae/aneiai iieoiiaiaieeiaiai eacaiiai eiaaoeyoia a einiaoieiaee Iauea iieiaeaiey Oeoae/aneay oaoieea ea/aiey aiaiea/anoaaiiuo iiaiiaaciaaiee eiaee aaeaiaioeoaony iaueie caeiiaie ieanoe/aneie oeoaee. Iaaa iiaaaaieai eacaiie iiaaoee neaaoao ioaieou oeceieiae/aneea iaaiaou eiaee, aa niiniaiinou e aiaaoeaiui iioannai aac iaaciaaiey aeiaoioe/aneeo e eaeeieaiuo oaoia. Aaaeiia cia/aiea eiaao oaeaea ninoiyiea eiaeiuo iieiaia, iniaaiii anee aa/ eiaao aaei n oae iacuaaaiie "iiaeaiiie" eiaeae, neeiiiinou iaoeaioa e aeoniui aa iiaaeaieyi e o.a. Oieuei iinea ouaoaeuiie ioaiee anao yoeo iieacaoaeae iiaeii ienooiaou iaiinaanoaaiii e eacaiie iiaaoee. Eiioaeoiue aaeei aicaaenoaey ia eiaeo, iaiauaiue eee eiioeuniue oaaeoa eceo/aiey ai iiiaii iiaaaeyo einiaoe/aneee acoeuoao iiaaoee. Neiinou e oaaeoa aiaaoeaiuo iioannia iiaaaeyony oaeaea iineaiiaaoiiiui aaaaieai iaeiaiaie oaaiu, eniieuciaaieai oao eee eiuo eaeanoaaiiuo naanoa, ea/aaiie e iioeeaeoe/aneie einiaoeee. Eacaiua iiaaoee iiaiayony iia ianoiie eioeeuoaoeiiiie aianoaceae eee aac iaa ie iaaieuoeo aciaao oaaeyaiuo iaaciaaiee. Oaaeaiea iaieeeii eiaee Aea aianoacee: ianoiay aianoacey eeaieaeiii eee iiaieaeiii eee aac aianoacee Oaaeoa eceo/aiey: eiioeuniue eee iaiauaiue Iiuiinou eceo/aiey: 1-3 Ao Oaoieea iiaaoee. Iaieeeiia caoaaouaaaony ieioaoii eee caaeeiii oeia "iineeo" e iiaeea iaaciaaiey eiaaoeeoaony oae, /oiau oiao naaoiaiaa iaoiaeeny ia aaieoa iaaeao iiaeeie iaieeeiiu e caiiaie eiaeae. Ia neaaoao /aciaii iooyaeaaou iaaciaaiea io iiaaoiinoe, oae eae yoi iiaeao oaaee/eou ieiuaau iaeiaa ieoaeauae eiaee. Ie iaeuo aciaao iaieeeiiu iia eiaaoeeoaony oaeeeii a iaaaeao iaeciaiiie eiaee. Ianoi eiaaoeyoee iaaaaouaaaony nieoii eee anoaiii iaaaioaaieeneiai eaeey. Aey oneiaiey yieoaeecaoee iiaeii eniieuciaaou aeaea eee iacu "Nieeinaeeiaay". Oaaeaiea oeaii eiaee Aea aianoacee: ianoiay aianoacey eeaieaeiii eee iiaieaeiii. Iiuiinou eceo/aiey: 3 Ao Oaoieea iiaaoee. Naaoiaiaii iiaiayo ieaeieyuee acac oi/ii ii aaieoa iaaciaaiey ni caiiaie eiaeae ia aeoaeio 1-2 ii. Ii aiciiaeiinoe iaaciaaiea caoaaouaao ieioaoii e iiecaiayo iona/aiea oeaiiu io iiaeaaeaueo oeaiae oi/ii ii aa aaieoa, iiecaiay oioai naaoiaiaa aaeaeaiey, aiaeiae/iua iau/iie oeoae/aneie oaoieea. Ie yoii ieioaoii oeaiio ana aieuoa iooyaeaao ia naay. Iinea oaaeaiey iaiaaoa iiaiayo ieii/aoaeuio eiaaoeyoe eiaioi/aueo eaieeeyia. Iaeiaiao iiaaoiinou iaaaaouaao eiioaioeiaaiiui anoaiii iaaaioaaieeneiai eaeey. A iineaiiaaoeiiiii iaeiaa iaeiaiao iiaaoiinou a oa/aiea 4-5 aiae iaaaaouaao 5% anoaiii iaaaioaaieeneiai Ieiaiaiea oeoae/aneiai iieoiiaiaieeiaiai eacaiiai eiaaoeyoia a einiaoieiaee eaeey, caoai iacu "Eoenie" aey oaiaioaoeaiiai i/euaiey io inoaoeia eiaaoeeiaaiiuo oeaiae, a caoai eniieucoo nieeinaeeiao iacu eee aeaea. Oaaeaiea iaaonia Aea aianoacee: ianoiay aianoacey eaeaieaeiii eee iiaieaeiii. Iiuiinou eceo/aiey: 1-3 Ao Iiuiinou eceo/aiey iiaaaeyaony aciaaie iaaona e noaiaiu aai aaneoeyecoee. Oaoieea iiaaoee. Ie eioaaaiaeuiii iaaona aiciiaeia nieioiay eiaaoeyoey iaaona a iaaaeao caiiauo oeaiae neaieoueie aaeaeaieyie anaoiaiaa. Neaaoao noaieouny e iieiie eiaaoeyoee iaeaieiniaaaeaueo iaaioeoia. Ie iiaiciuo eee iaieeeiiaoiciuo oeiao ieaiaioiiai iyoia oaoieea iiaaoee e iineaiiaaoeiiiiai aaaaiey aiu aiaeiae/ia oaeiaie ie ea/aiee oeaii eiaee. Oaaeaiea aoaii eiaee aieinenoie /anoe aieiau Aea aianoacee: ianoiay aianoacey eeaieaeiii eee iiaieaeiii. Iiuiinou eceo/aiey: 3Ao Oaoieea iiaaoee. N iiiiuu naaoiaiaa iiaiayo acac eiaee ii aeaiaoo iaaciaaiey. acac oaeoaeyo e aneuaao eainoeo aoaiiu. Iooai naaaeeaaiey aoaiiu oaaeyo aa niaaaeeiia, iinea /aai eae eainoeu caoaaoaao caaeeiii, auoyaeaao a aio e iinea eiaaoeyoee ninoaia iiaeee iaaciaaiey eainoeo oaaeyo. Eeiaeio aio iaaaaouaao anoaiii iaaaioaaieeneiai eaeey, iinea /aai eay aiu naeeaeao ai niiinoaaeaieey. A iineaiiaaoeiiiii iaeiaa aio iaaaaouaao eiioaioeiaaiiui anoaiii iaaaioaaieeneiai eaeey a oa/aiea 6-7 aiae. Ea/aiea eaieeeyiyeoacee e aiaeii eiaee. Aianoacey ia oaaoaony Iiuiinou eceo/aiey: 800 iao-3 Ao Oaoieea iiaaoee. Ea/aiea eaieeeyiyeoacee, iaeeeo aiaeii iiecaiaeony a aenoaioeiiiii aaeeia. Neaaoao noaieouny e iiaaeaie eiaee iaa ninoaii, ii ia eaaoeyoee aa, /oi ainoeaaaony iauaenoie aaioie iaaaeu.. Neaaoao noaieouny e oiio, /oiau iiey iaeo/aiey ia iaeieaauaaeenu aoa ia aoaa, e naco aea iinea iiaaoee eiaioie ii eaieeeyo iaeaoeeny. A iineaiiaaoeiiiii iaeiaa ia eiaeo iaiineony nieeinaeeiaia aeaea eee iacu aey oneiaiey yieoaeecaoee. Oaaeaiea aoeuaaiuo aiiaaaie. Ni. oaoieeo oaaeaiey oeaii eiaee. Please use BACK button of your browser or Go to Main ATC-SD Medicine Page LD model coding Laser diodes and arrays model number coding ATC-C1000-100-AMF-808-3-F200 Device class: C = CW laser diodes Q = QCW linear arrays Fiber core diameter micrometers (omitted if no fiber) Output optical power: mW for C class W for Q class Emitting wavelength tolerance nanometers Emitting area width: micrometers for C class millimeters for Q class Package type: A = ATC case T = TO-3 case O = open heat-sink Cylindrical microlens: M = mounted O = not mounted Emitting wavelength nanometers Feedback photodiode: F = mounted I = not mounted This coding system is used since June 11th, 1999. Click here to see the previous system. LD model coding - old version Laser diodes model number coding - OUTDATED SYSTEM This coding system is not in use since June 11th, 1999. Click here to see currently valid system ATC - a b c d 0 a 1 construction and spectral region 2 3 b c emitting dimensions operating mode and output power options meant the following: single mode, l < 0.78 mkm single mode, l = 0.78-0.82 or 0.96-0.98 mkm partially phase locked array, multi mode, l= 0.78-0.82 or 0.96-0.98 mkm linear array, multi mode, l = 0.78-0.82 or 0.96-0.98 mkm 1 < 10 mkm 2 11-50 mkm 3 51-100 mkm 4 101-150 mkm 5 151-1000 mkm 6 1001-6000 mkm 7 6001-10000 mkm 0 1 pulsed CW 2 CW 100-499 mW 3 CW 500-999 mW 4 CW 1000-1999 mW 5 CW 2000-4999 mW 6 QCW 5...50 W 7 QCW > 50 W 0 without options 1 monitor photodiode < 3000 mW < 100 mW LD model coding - old version d 2 microlens 3 monitor photodiode & microlens LD graphs Typical ATC-SD laser diodes characteristics Light vs current characteristics Emission spectrum Farfield energy distribution LD graphs Packages and cooling head - Drawings Package types Dimensions are given in millimeters. Tolerances 0.25 mm. Packages and cooling head - Drawings Being completely compatible with common TO-3 package, ours has a detachable mounting ring. This gives higher variety of possible applications and allows to achieve higher density of the device design. Packages and cooling head - Drawings