
MBRD650CT, MBRD660CT
Bulletin PD-20755 rev. E 05/06
VFM Max. Forward Voltage Drop 0.7 V @ 3A
(Per Leg) * See Fig. 1 (1) 0.9 V @ 6A
0.65 V @ 3A
0.85 V @ 6A
IRM Max. Reverse Leakage Current 0.1 mA TJ = 25 °C
(Per Leg) * See Fig. 2 (1) 15 mA TJ = 125 °C
CTTyp. Junction Capacitance (Per Leg) 145 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LSTypical Series Inductance (Per Leg) 5.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/μs (Rated VR)
TJMax. Junction Temperature Range (*) -40 to 150 °C
Tstg Max. Storage Temperature Range -40 to 150 °C
RthJC Max. Thermal Resistance (Per Leg) 6 °C/W DC operation * See Fig. 4
Junction to Case (Per Device) 3
RthJA Max. Thermal Resistance Junction 80 °C/W
to Ambient
wt Approximate Weight 0.3 (0.01) g (oz.)
Case Style D-Pak Similar to TO-252AA
Device Marking MBRD660CT
Thermal-Mechanical Specifications
TJ = 25 °C
TJ = 125 °C
Electrical Specifications
(1) Pulse Width < 300μs, Duty Cycle <2%
VR = rated VR
Part number MBRD650CT MBRD660CT
VRMax. DC Reverse Voltage (V) 50 60
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
Parameters Value Units Conditions
Parameters Value Units Conditions
IF(AV) Max. Average Forward(Per Leg) 3.0 A 50% duty cycle @ TC = 128°C, rectangular wave form
Current * See Fig. 5 (Per Device) 6
IFSM Max. Peak One Cycle Non-Repetitive 490 5μs Sine or 3μs Rect. pulse
Surge Current * See Fig. 7 75 10ms Sine or 6ms Rect. pulse
EAS Non-Repet. Aval. Energy (Per Leg) 6 mJ TJ = 25 °C, IAS
= 1 Amp, L = 12 mH
IAR Repetitive Avalanche Current 0.6 A Current decaying linearly to zero in 1 μsec
(Per Leg) Frequency limited by TJ max. VA = 1.5 x VR typical
Absolute Maximum Ratings
Following any rated
load condition and with
rated VRRM applied
A
Parameters Value Units Conditions
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)