MCR08BT1 Thyristor; logic level Rev. 03 -- 29 November 2004 Product data sheet SOT223 1. Product profile 1.1 General description Passivated, sensitive gate thyristor in a SOT223 plastic package. 1.2 Features Sensitive gate Surface mount package. 1.3 Applications General purpose switching and phase control Designed to be interfaced directly to microcontrollers, logic integrated circuits and low power gate trigger circuits. 1.4 Quick reference data VDRM, VRRM 200 V IT(AV) 0.5 A IGT = 50 A (typ). IT(RMS) 0.8 A ITSM 9 A 2. Pinning information Table 1: Pinning Pin Description 1 cathode 2 anode 3 gate 4 anode Simplified outline Symbol 4 sym037 1 2 3 SOT223 (SC-73) 3. Ordering information Table 2: Ordering information Type number MCR08BT1 Package Name Description Version SC-73 plastic surface mounted package with increased heat sink; 4 leads SOT223 MCR08BT1 Philips Semiconductors Thyristor; logic level 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min [1] Max Unit 200 V VDRM, VRRM repetitive peak off-state voltage IT(AV) average on-state current half sine wave; Tsp 112 C; see Figure 1 - 0.5 A IT(RMS) RMS on-state current all conduction angles; see Figure 4 and 5 - 0.8 A ITSM non-repetitive peak on-state current half sine wave; Tj = 25 C prior to surge; see Figure 2 and 3 - 8 A t = 10 ms - 9 A I2t I2t for fusing t = 10 ms t = 8.3 ms - 0.32 A2 s dIT/dt repetitive rate of rise of on-state current after triggering ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/s - 50 A/s IGM peak gate current - 1 A VGM peak gate voltage - 5 V VRGM peak reverse gate voltage - 5 V PGM peak gate power - 2 W PG(AV) average gate power - 0.1 W Tstg storage temperature -40 +150 C Tj junction temperature - 125 C [1] over any 20 ms period Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/s. 001aac104 1 a= 1.57 Ptot (W) 1.9 0.8 110 Tsp(max) (C) 113 2.2 2.8 116 0.6 4 0.4 0.2 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 119 125 0.7 0 0 0.1 0.2 0.3 0.4 0.5 122 0.6 IT(AV) (A) a = form factor = IT(RMS)/IT(AV). Fig 1. Total power dissipation as a function of average on-state current; maximum values 9397 750 13513 Product data sheet (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 -- 29 November 2004 2 of 12 MCR08BT1 Philips Semiconductors Thyristor; logic level 001aac105 10 ITSM (A) IT ITSM 8 t tp Tj initial = 25 C max 6 4 2 0 1 102 10 103 n f = 50 Hz. Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 001aac106 103 IT ITSM (A) 102 ITSM t tp Tj initial = 25 C max 10 1 10-5 10-4 10-3 10-2 tp (s) tp 10 ms. Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values 9397 750 13513 Product data sheet (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 -- 29 November 2004 3 of 12 MCR08BT1 Philips Semiconductors Thyristor; logic level 001aac107 2.0 001aac108 1.2 IT(RMS) (A) 1.0 IT(RMS) (A) 1.5 0.8 0.6 1.0 0.4 0.5 0.2 0 10-2 10-1 1 10 surge duration (s) f = 50 Hz; Tsp 112 C. 0 -50 0 50 100 150 Tsp (C) Tsp = 112 C. Fig 4. RMS on-state current as a function of surge duration for sinusoidal currents; maximum values Fig 5. RMS on-state current as a function of solder point temperature; maximum values 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-sp) thermal resistance from junction to solder point see Figure 6 - - 15 K/W Rth(j-a) thermal resistance from junction to ambient printed-circuit board mounted, minimum footprint - 156 - K/W printed-circuit board mounted, pad area as in Figure 14 - 70 - K/W 9397 750 13513 Product data sheet (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 -- 29 November 2004 4 of 12 MCR08BT1 Philips Semiconductors Thyristor; logic level 001aac114 102 Zth(j-sp) (K/W) 10 1 = P tp T 10-1 t tp T 10-2 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) Fig 6. Transient thermal impedance from junction to solder point as a function of pulse duration 6. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD = 12 V; IT = 10 mA; gate open circuit; see Figure 8 - 50 200 A IL latching current VD = 12 V; IGT = 0.5 mA; RGK = 1 k; see Figure 10 - 2 6 mA IH holding current VD = 12 V; IGT = 0.5 mA; RGK = 1 k; see Figure 11 - 2 5 mA VT on-state voltage IT = 1.2 A; see Figure 9 - 1.25 1.7 V VGT gate trigger voltage IT = 10 mA; gate open circuit; see Figure 7 VD = 12 V - 0.5 0.8 V VD = VDRM(max); Tj = 125 C 0.2 0.3 - V ID off-state leakage current VD = VDRM(max); Tj = 125 C; RGK = 1 k - 0.05 0.1 mA IR reverse current VR = VRRM(max); Tj = 125 C; RGK = 1 k - 0.05 0.1 mA RGK = 1 k 500 800 - V/s gate open circuit - 25 - V/s Dynamic characteristics dVD/dt critical rate of rise of off-state voltage VDM = 67 % VDRM(max); Tj = 125 C; exponential waveform tgt gate controlled turn-on time ITM = 2 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A/s - 2 - s tq circuit commutated turn-off time VD = 67 % VDRM(max); Tj = 125 C; ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/s; dVD/dt = 2 V/s; RGK = 1 k - 100 - s 9397 750 13513 Product data sheet (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 -- 29 November 2004 5 of 12 MCR08BT1 Philips Semiconductors Thyristor; logic level 001aac109 1.6 VGT(Tj) VGT(25 C) IGT(Tj) IGT(25 C) 1.2 2 0.8 1 0.4 -50 0 50 100 150 001aac110 3 0 -50 0 50 100 Tj (C) Fig 7. Normalized gate trigger voltage as a function of junction temperature. 001aac113 5 150 Tj (C) IT (A) Fig 8. Normalized gate trigger current as a function of junction temperature. 001aab503 3 IL(Tj) IL(25 C) 4 2 3 2 1 1 (1) 0 0.4 (2) (3) 1.2 2 2.8 0 -50 0 VO = 1.0 V. 50 100 150 Tj (C) VT (V) RGK = 1 k . RS = 0.27 . (1) Tj = 125 C; typical values. (2) Tj = 125 C; maximum values. (3) Tj = 25 C; maximum values. Fig 9. On-state current characteristics. Fig 10. Normalized latching current as a function of junction temperature. 9397 750 13513 Product data sheet (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 -- 29 November 2004 6 of 12 MCR08BT1 Philips Semiconductors Thyristor; logic level 001aab504 3 001aac115 104 IH(Tj) IH(25 C) dVD/dt (V/s) 2 103 1 102 (1) (2) 0 -50 10 0 50 100 150 0 50 Tj (C) RGK = 1 k . 100 150 Tj (C) (1) RGK = 1 k. (2) Gate open circuit. Fig 11. Normalized holding current as a function of junction temperature. Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values. 7. Package information Epoxy meets requirements of UL94 V-0 at 18 inch. 9397 750 13513 Product data sheet (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 -- 29 November 2004 7 of 12 MCR08BT1 Philips Semiconductors Thyristor; logic level 8. Package outline Plastic surface mounted package with increased heatsink; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC SOT223 JEDEC JEITA SC-73 EUROPEAN PROJECTION ISSUE DATE 99-09-13 04-11-10 Fig 13. Package outline SOT223 (SC-73) 9397 750 13513 Product data sheet (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 -- 29 November 2004 8 of 12 MCR08BT1 Philips Semiconductors Thyristor; logic level 9. Mounting 9.1 Mounting instructions 3.8 min 1.5 min 6.3 1.5 min (3x) 2.3 1.5 min 4.6 001aab508 Dimensions in mm. Fig 14. SOT223: minimum footprint 9397 750 13513 Product data sheet (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 -- 29 November 2004 9 of 12 MCR08BT1 Philips Semiconductors Thyristor; logic level 10. Revision history Table 6: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes MCR08BT1_3 20041129 Product data sheet - 9397 750 13513 MCR08BT1_HG_2 Modifications: * The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors * Table 5 "Characteristics": on-state voltage, changed Typ. value from 1.25 V to 1.35 V and changed Max. value from 1.5 V to 1.7 V * Table 5 "Characteristics": critical rate of rise of off-state voltage, added Min. value of 500 V/s and changed Typ. value from 25 V/s to 800 V/s * * Figure 9 "On-state current characteristics.": curve values changed Figure 12 "Critical rate of rise of off-state voltage as a function of junction temperature; typical values.": curve values changed and `gate open circuit' curve added. MCR08BT1_HG_2 20011023 Product specification - 9397 750 08943 MCR08BT1_1 MCR08BT1_1 20010701 Product specification - n.a. - 9397 750 13513 Product data sheet (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 -- 29 November 2004 10 of 12 MCR08BT1 Philips Semiconductors Thyristor; logic level 11. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions 13. Disclaimers Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 13513 Product data sheet (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Rev. 03 -- 29 November 2004 11 of 12 MCR08BT1 Philips Semiconductors Thyristor; logic level 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package information . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Mounting instructions . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 (c) Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 29 November 2004 Document number: 9397 750 13513 Published in The Netherlands