1. Product profile
1.1 General description
Passivated, sensitive gate thyristor in a SOT223 plastic package.
1.2 Features
■Sensitive gate
■Surface mount package.
1.3 Applications
■General purpose switching and phase control
■Designed to be interfaced directly to microcontrollers, logic integrated circuits and low
power gate trigger circuits.
1.4 Quick reference data
2. Pinning information
3. Ordering information
SOT223
MCR08BT1
Thyristor; logic level
Rev. 03 — 29 November 2004 Product data sheet
■VDRM, VRRM ≤ 200 V ■IT(RMS) ≤ 0.8 A
■IT(AV) ≤ 0.5 A ■ITSM ≤ 9 A
■IGT = 50 µA (typ).
Table 1: Pinning
Pin Description Simplified outline Symbol
1 cathode
SOT223 (SC-73)
2 anode
3 gate
4 anode 132
4
sym037
Table 2: Ordering information
Type number Package
Name Description Version
MCR08BT1 SC-73 plastic surface mounted package with increased heat sink; 4 leads SOT223
9397 750 13513 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 29 November 2004 2 of 12
Philips Semiconductors MCR08BT1
Thyristor; logic level
4. Limiting values
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/µs.
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM, VRRM repetitive peak off-state voltage [1] 200 V
IT(AV) average on-state current half sine wave; Tsp ≤112 °C;
see Figure 1 - 0.5 A
IT(RMS) RMS on-state current all conduction angles; see
Figure 4 and 5- 0.8 A
ITSM non-repetitive peak on-state
current half sine wave; Tj= 25 °C
prior to surge; see Figure 2
and 3
t = 10 ms - 8 A
t = 8.3 ms - 9 A
I2tI
2t for fusing t = 10 ms - 0.32 A2s
dIT/dt repetitive rate of rise of on-state
current after triggering ITM = 2 A; IG = 10 mA;
dIG/dt = 100 mA/µs-50 A/µs
IGM peak gate current - 1 A
VGM peak gate voltage - 5 V
VRGM peak reverse gate voltage - 5 V
PGM peak gate power - 2 W
PG(AV) average gate power over any 20 ms period - 0.1 W
Tstg storage temperature −40 +150 °C
Tjjunction temperature - 125 °C
a = form factor = IT(RMS)/IT(AV).
Fig 1. Total power dissipation as a function of average on-state current; maximum values
001aac104
1
Ptot
(W)
0
110
125
IT(AV) (A)
0 0.70.4 0.60.20.1 0.50.3
4
2.2
2.8
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
Tsp(max)
(°C)
0.8
0.6
0.4
0.2
113
116
119
122
a =
1.57
1.9
9397 750 13513 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 29 November 2004 3 of 12
Philips Semiconductors MCR08BT1
Thyristor; logic level
f = 50 Hz.
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
tp≤ 10 ms.
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
001aac105
4
6
2
8
10
ITSM
(A)
0
n
1 103
102
10
tp
Tj initial = 25 °C max
ITITSM
t
001aac106
tp (s)
10−510−2
10−3
10−4
102
10
103
ITSM
(A)
1
tp
Tj initial = 25 °C max
ITITSM
t
9397 750 13513 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 29 November 2004 4 of 12
Philips Semiconductors MCR08BT1
Thyristor; logic level
5. Thermal characteristics
f = 50 Hz; Tsp ≤ 112 °C. Tsp = 112 °C.
Fig 4. RMS on-state current as a function of surge
duration for sinusoidal currents; maximum
values
Fig 5. RMS on-state current as a function of solder
point temperature; maximum values
001aac107
1.0
0.5
1.5
2.0
IT(RMS)
(A)
0
surge duration (s)
10−210−1101 Tsp (°C)
−50 150100050
001aac108
1.2
IT(RMS)
(A)
0
1.0
0.8
0.6
0.4
0.2
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance from junction to
solder point see Figure 6 --15K/W
Rth(j-a) thermal resistance from junction to
ambient printed-circuit board mounted,
minimum footprint - 156 - K/W
printed-circuit board mounted, pad
area as in Figure 14 - 70 - K/W
9397 750 13513 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 29 November 2004 5 of 12
Philips Semiconductors MCR08BT1
Thyristor; logic level
6. Characteristics
Fig 6. Transient thermal impedance from junction to solder point as a function of pulse duration
001aac114
1
10−1
10
102
Zth(j-sp)
(K/W)
10−2
tp (s)
10−511010−1
10−2
10−410−3
tp
tp
T
P
t
T
δ =
Table 5: Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
IGT gate trigger current VD = 12 V; IT = 10 mA; gate open circuit; see
Figure 8 - 50 200 µA
ILlatching current VD = 12 V; IGT = 0.5 mA; RGK =1kΩ; see
Figure 10 - 26mA
IHholding current VD = 12 V; IGT = 0.5 mA; RGK =1kΩ; see
Figure 11 - 25mA
VTon-state voltage IT = 1.2 A; see Figure 9 - 1.25 1.7 V
VGT gate trigger voltage IT = 10 mA; gate open circuit; see Figure 7
VD = 12 V - 0.5 0.8 V
VD = VDRM(max); Tj= 125 °C 0.2 0.3 - V
IDoff-state leakage current VD = VDRM(max); Tj= 125 °C; RGK =1kΩ- 0.05 0.1 mA
IRreverse current VR=V
RRM(max); Tj= 125 °C; RGK =1kΩ- 0.05 0.1 mA
Dynamic characteristics
dVD/dt critical rate of rise of
off-state voltage VDM = 67 % VDRM(max); Tj = 125 °C; exponential
waveform
RGK =1kΩ500 800 - V/µs
gate open circuit - 25 - V/µs
tgt gate controlled turn-on
time ITM = 2 A; VD=V
DRM(max); IG=10mA;
dIG/dt = 0.1 A/µs-2-µs
tqcircuit commutated
turn-off time VD = 67 % VDRM(max); Tj= 125 °C; ITM = 1.6 A;
VR = 35 V; dITM/dt=30A/µs; dVD/dt = 2 V/µs;
RGK =1kΩ
- 100 - µs
9397 750 13513 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 29 November 2004 6 of 12
Philips Semiconductors MCR08BT1
Thyristor; logic level
Fig 7. Normalized gate trigger voltage as a function of
junction temperature. Fig 8. Normalized gate trigger current as a function of
junction temperature.
VO = 1.0 V.
RS = 0.27 Ω.
(1) Tj = 125 °C; typical values.
(2) Tj = 125 °C; maximum values.
(3) Tj = 25 °C; maximum values.
RGK = 1 k Ω.
Fig 9. On-state current characteristics. Fig 10. Normalized latching current as a function of
junction temperature.
Tj (°C)
−50 150100050
001aac109
0.8
1.2
1.6
0.4
VGT(Tj)
VGT(25 °C)
Tj (°C)
−50 150100050
001aac110
1
2
3
0
IGT(Tj)
IGT(25 °C)
001aac113
VT (V)
0.4 2.821.2
2
3
1
4
5
IT
(A)
0
(1) (2) (3)
Tj (°C)
−50 150100050
001aab503
1
2
3
0
IL(Tj)
IL(25 °C)
9397 750 13513 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 29 November 2004 7 of 12
Philips Semiconductors MCR08BT1
Thyristor; logic level
7. Package information
Epoxy meets requirements of UL94 V-0 at 1⁄8 inch.
RGK = 1 k Ω. (1) RGK = 1 kΩ.
(2) Gate open circuit.
Fig 11. Normalized holding current as a function of
junction temperature. Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; typical
values.
Tj (°C)
−50 150100050
001aab504
1
2
3
0
IH(Tj)
IH(25 °C)
001aac115
103
102
104
dVD/dt
(V/µs)
10
Tj (°C)
0 15010050
(2)
(1)
9397 750 13513 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 29 November 2004 8 of 12
Philips Semiconductors MCR08BT1
Thyristor; logic level
8. Package outline
Fig 13. Package outline SOT223 (SC-73)
UNIT A1bpcDEe1HELpQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73 99-09-13
04-11-10
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface mounted package with increased heatsink; 4 leads SOT223
9397 750 13513 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 29 November 2004 9 of 12
Philips Semiconductors MCR08BT1
Thyristor; logic level
9. Mounting
9.1 Mounting instructions
Dimensions in mm.
Fig 14. SOT223: minimum footprint
001aab508
3.8 min
1.5
min
1.5
min
(3×)
2.3
4.6
6.3
1.5
min
9397 750 13513 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 29 November 2004 10 of 12
Philips Semiconductors MCR08BT1
Thyristor; logic level
10. Revision history
Table 6: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
MCR08BT1_3 20041129 Product data sheet - 9397 750 13513 MCR08BT1_HG_2
Modifications: •The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors
•Table 5 “Characteristics”: on-state voltage, changed Typ. value from 1.25 V to 1.35 V and
changed Max. value from 1.5 V to 1.7 V
•Table 5 “Characteristics”: critical rate of rise of off-state voltage, added Min. value of 500 V/µs
and changed Typ. value from 25 V/µs to 800 V/µs
•Figure 9 “On-state current characteristics.”: curve values changed
•Figure 12 “Critical rate of rise of off-state voltage as a function of junction temperature; typical
values.”: curve values changed and ‘gate open circuit’ curve added.
MCR08BT1_HG_2 20011023 Product specification - 9397 750 08943 MCR08BT1_1
MCR08BT1_1 20010701 Product specification - n.a. -
Philips Semiconductors MCR08BT1
Thyristor; logic level
9397 750 13513 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 29 November 2004 11 of 12
11. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level Data sheet status[1] Product status[2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data fromthe preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 29 November 2004
Document number: 9397 750 13513
Published in The Netherlands
Philips Semiconductors MCR08BT1
Thyristor; logic level
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 1
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Package information . . . . . . . . . . . . . . . . . . . . . 7
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
9.1 Mounting instructions . . . . . . . . . . . . . . . . . . . . 9
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information . . . . . . . . . . . . . . . . . . . . 11
