Sep.
20
15
.
V
ersion 1.1
MagnaChip Se
miconductor L
td
.
1
MDP1933
–
Single N-Channel T
rench MOSFET 80V
A
bsolute Maximum Ra
tings (Ta = 25
o
C)
Characterist
ics
Symbol
Rating
Unit
Drain-Sour
ce Voltage
V
DSS
80
V
Gate-Source
Voltage
V
GSS
±
20
V
Continuou
s Drain Curre
nt
(1)
T
C
=25
o
C
(Silicon Li
mited)
I
D
105
A
T
C
=25
o
C
(Package Li
mited)
120
T
C
=100
o
C
67
Pulsed Dr
ain Current
I
DM
420
Pow
er Dissipation
T
C
=25
o
C
P
D
157
W
T
C
=
10
0
o
C
63
Single Pul
se Avalanche
Energy
(2)
E
AS
144
.5
mJ
Junction and
Storage Te
mperature Ran
ge
T
J
, T
stg
-55~150
o
C
Thermal Characteristics
Characterist
ics
Symbol
Rating
Unit
Thermal Resistan
ce, Junction-
to
-
Ambient
(1)
R
θJA
62.5
o
C/W
Thermal Resistan
ce, Junction-
to
-
Case
R
θJC
0.
8
MD
P
19
33
Single N-channel T
rench MOSFET 80V
, 105A
, 7.0m
Ω
Features
V
DS
=
8
0V
I
D
= 1
05
A
@V
GS
= 10V
R
DS(ON)
<
7.0
mΩ @V
GS
= 10V
100% UIL
T
ested
100% Rg T
ested
General Description
The
MD
P193
3
uses
advanced
MagnaChip
’
s
MO
SFET
T
echnology
,
which
provides
high
p
erformance
in
on-state
resistance,
fast
sw
itching
performance
and
ex
c
ellent
quality
.
MDP1933
is
suitable
device
for
Synchronous
Rectification For Server and general purpose applications.
TO
-
220
D
G
S
Sep.
20
15
.
V
ersion 1.1
MagnaChip Se
miconductor L
td
.
2
MDP1933
–
Single N-Channel T
rench MOSFET 80V
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS
Status
MDP1933
TH
-55~150
o
C
TO
-
220
Tu
be
Halogen Free
Electrical Characteristics (T
J
=25
o
C)
Characterist
ics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characterist
ics
Drain-Sour
ce Breakdow
n Voltage
BV
DSS
I
D
=
250μA, V
GS
=
0V
80
-
-
V
Gate Thr
eshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
-
4.0
Drain Cu
t-Off Current
I
DSS
V
DS
=
64
V, V
GS
= 0V
-
-
1.0
μA
Gate Lea
kage Current
I
GSS
V
GS
= ±
20V, V
DS
= 0V
-
-
±
0.1
Drain-Sour
ce ON Resistan
ce
R
DS(ON)
V
GS
= 10V, I
D
=
50
A
-
5.5
7.0
m
Ω
Forw
ard Transconductan
ce
g
fs
V
DS
=
10
V, I
D
=
50
A
-
47
-
S
Dynamic Charac
teristics
Total Gate
Charge
Q
g
V
DS
=
40V, I
D
=
50
A
,
V
GS
= 10
V
-
59.4
-
nC
Gate-Source
Charge
Q
gs
-
16.5
-
Gate-Dra
in Charge
Q
gd
-
12.3
-
Input Ca
pacitance
C
iss
V
DS
=
40
V, V
GS
= 0V,
f = 1.0MHz
-
3,841
-
pF
Reverse
Transfer Capaci
tance
C
rss
-
34.2
-
Output Ca
pacitance
C
oss
-
651.7
-
Turn-On
Delay Time
t
d(on)
V
GS
= 10
V, V
DS
=
40
V,
I
D
=
50
A , R
G
=
3.0Ω
-
15.6
-
ns
Rise Ti
me
t
r
-
32.7
-
Turn-Off
Delay Time
t
d(off)
-
24.2
-
Fall Time
t
f
-
15.1
-
Gate Re
sistance
Rg
f=1 MHz
-
2.5
-
Ω
Drain-Source Body
Diode Characteristics
Source-Dra
in Diode Forw
ard Voltage
V
SD
I
S
=
50
A, V
GS
= 0V
-
0.9
1.2
V
Body Diode
Reverse Re
covery Time
t
rr
I
F
=
50
A,
dl/dt = 100A/μ
s
-
64.3
ns
Body Diode
Reverse Re
covery Char
ge
Q
rr
-
152.7
nC
Note :
1. Surface mounted
FR-4 board
by JEDEC
(jesd51-7). Con
tinuous current
at T
C
=25
℃
is silico
n limited
2. E
AS
is tested at
starting Tj = 25
℃
,
L = 1.0mH,
I
AS
=
17
.0
A, V
GS
= 10V.
Sep.
20
15
.
V
ersion 1.1
MagnaChip Se
miconductor L
td
.
3
MDP1933
–
Single N-Channel T
rench MOSFET 80V
Fig.5 T
ransfe
r Characteristics
Fig.1 On-Region Cha
racteristics
Fig.2 On-Resistan
ce V
ariation w
ith
Drain Current and
Gate V
oltage
Fig.3 On-Resistance
V
ariation w
ith
T
emperature
Fig.4 On-Resistan
ce V
ariation w
ith
Gate to Source V
oltage
Fig.6
Bod
y
Diode
Forw
ard
V
oltage
V
ariation
w
ith
Source
Cu
rrent
and
T
emperature
0.0
0.3
0.6
0
.9
1.2
1.5
1
10
100
T
A
=25
℃
※
Notes :
V
GS
= 0V
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain voltage [V]
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
※
Notes :
1. V
GS
= 10 V
2. I
D
= 50 A
R
DS(ON)
,
(Normalize
d)
Drain-Sou
rce On-R
esistance
T
J
, Junction Temperature [
o
C]
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
18
20
※
Notes :
I
D
= 50A
T
A
= 25
℃
R
DS(ON)
[m
Ω
],
Drain-S
ource O
n-Resista
nce
V
GS
, Gate to Source Vola
tge [V]
0
10
20
30
40
50
60
70
80
90
100
3
4
5
6
7
8
V
GS
= 10V
Drain-Sourc
e On-Resista
nce [m
Ω
]
I
D
, Drain Current [A]
0
1
2
3
4
5
6
7
8
0
10
20
30
40
50
60
70
80
90
100
V
GS
, Gate-Source Voltage [V]
T
A
=25
℃
※
Notes :
V
DS
= 10V
I
D
, Drain Current [A]
0
1
2
3
4
5
0
10
20
30
40
50
60
70
80
90
100
8.0 V
10 V
5.0 V
6.0 V
4.5 V
4.0 V
I
D
Drain Current [A
]
V
DS
, Drain-Source Voltage [V]
Sep.
20
15
.
V
ersion 1.1
MagnaChip Se
miconductor L
td
.
4
MDP1933
–
Single N-Channel T
rench MOSFET 80V
Fig.7 Gate Charge Ch
aracteristics
Fig.8 Capacitance Cha
racteristics
Fig.9 Maximum Safe Op
erating A
rea
Fig.10
Maximum
D
rain
Current
v
s.
Case T
emperature
Fig.1
1
Tr
ansient
Thermal
Response
Curve
25
50
75
100
125
150
0
20
40
60
80
100
120
I
D
, Drain Current [A]
T
C
, Case Tem
perature [
℃
]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
※
Not
es :
Du
ty
Factor, D=
t
1
/t
2
P
EAK T
J
= P
DM
* Z
θ
JC
* R
θ
JC
(t) + T
C
single pu
lse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z
θ
JA
(t), Thermal Resp
onse
t
1
, Rectangula
r Pulse D
uration [sec]
0
5
10
15
20
25
30
35
40
0
1000
2000
3000
4000
5000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
※
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance
[pF]
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
60
0
2
4
6
8
10
V
DS
= 40V
※
Not
e : I
D
= 50A
V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
1 ms
100 ms
10 ms
DC
100 us
Operation in Thi
s Area
is Limited by
R
DS(on)
Single Pulse
T
J
=Max rated
T
C
=25
℃
I
D
, Dra
in Current [A]
V
DS
, Drain-Source Voltage [V]
Sep.
20
15
.
V
ersion 1.1
MagnaChip Se
miconductor L
td
.
5
MDP1933
–
Single N-Channel T
rench MOSFET 80V
Package Dimension
3 Leads
,
TO
-220
Dimensions are in mil
limeters unless
otherwise sp
ecified
Sep.
20
15
.
V
ersion 1.1
MagnaChip Se
miconductor L
td
.
6
MDP1933
–
Single N-Channel T
rench MOSFET 80V
DISCLAIMER:
The
Products
are
not
designed
for
use
i
n
hostile
environments,
including,
without
limitation,
aircraft,
nuclear
power
generation,
m
edical
appliances,
and
devices
or
systems
in
w
hich
malfunction
of
any
Pro
duct
ca
n
reasonably
be
expected
to
result
i
n
a
personal
injury.
Sel
ler’s
customers
using
or
selling
Seller’s
products
for
use
in
suc
h
applications do so at their own risk and agree to fully defend and indemnify
Seller.
MagnaC
hip
reserves the
right
to change t
he s
pecification
s
and circuitry without
notice
a
t
any t
ime. MagnaChip does
not c
onsider responsibility
for
use
of
any
circuitry
other
than
circuitry
entirely
included
in
a
MagnaCh
ip
product.
is
a
registered
trademark
of
Magna
Chip
Semiconductor
Ltd.
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