WS512K32-XXX 512Kx32 SRAM MODULE, SMD 5962-94611 PRELIMINARY* FEATURES Access Times of 70, 85, 100, 120ns Commercial, Industrial and Military Temperature Ranges Packaging TTL Compatible Inputs and Outputs * 66-pin, PGA Type, 1.185 inch square, Hermetic Ceramic HIP (Package 401) 5 Volt Power Supply * 66-pin, PGA Type, 1.385 inch square, Hermetic Ceramic HIP (Package 402) Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation * 68 lead, 40mm Hermetic Low Profile CQFP, 3.56mm (0.140"), (Package 502) * 68 lead, Hermetic CQFP, 22.4mm (0.880 inch) square. Designed to fit JEDEC 68 lead 0.990" CQFJ footprint. - G2 (Package 500), 5.08mm (0.200 inch) high - G2T (Package 509), 4.57mm (0.180 inch) high Weight WS512K32-XG2X - 8 grams typical WS512K32-XG2TX - 8 grams typical WS512K32-XHX - 13 grams typical WS512K32-XH2X - 13 grams typical WS512K32-XG4TX - 20 grams typical Low Power CMOS Organized as 512Kx32, User Configurable as 1024Kx16 or 2Mx8 PIN CONFIGURATION FOR WS512K32-XHX PIN DESCRIPTION TOP VIEW 1 12 23 34 45 56 I/O0-31 Data Inputs/Outputs I/O8 WE2 I/O15 I/O24 VCC I/O31 A0-18 Address Inputs I/O9 CS2 I/O14 I/O25 CS4 I/O30 WE1-4 Write Enables GND I/O10 I/O13 WE4 I/O26 CS1-4 Chip Selects OE Output Enable Power Supply I/O29 A13 I/O11 I/O12 A6 I/O27 I/O28 VCC A14 A10 OE A7 A3 A0 GND Ground NC Not Connected A15 A11 A18 NC A4 A1 A16 A12 WE1 A8 A5 A2 A17 VCC I/O7 A9 WE3 I/O23 I/O0 CS1 I/O6 I/O16 CS3 I/O22 I/O1 NC I/O5 I/O17 GND I/O21 I/O2 I/O3 I/O4 I/O18 I/O19 I/O20 BLOCK DIAGRAM W E1 CS1 512K x 8 8 11 22 33 44 55 W E3 CS3 W E4 CS4 512K x 8 8 512K x 8 8 512K x 8 8 66 I/O0-7 February 1998 W E2 CS2 OE A0-18 1 I/O8-15 I/O16-23 I/O24-31 White Microelectronics * Phoenix, AZ * (602) 437-1520 4 SRAM MODULES FIG. 1 * This data sheet describes a product under development, not fully characterized, and is subject to change without notice. WS512K32-XXX FIG. 2 PIN CONFIGURATION FOR WS512K32N-XH2X PIN DESCRIPTION TOP VIEW 1 12 23 34 45 56 I/O0-31 Data Inputs/Outputs I/O8 WE2 I/O15 I/O24 VCC I/O31 A0-18 Address Inputs I/O9 CS2 I/O14 I/O25 CS4 I/O30 WE1-4 Write Enables GND I/O10 I/O13 WE4 I/O26 CS1-4 Chip Selects OE Output Enable I/O29 A13 I/O11 I/O12 A6 I/O27 I/O28 VCC Power Supply A14 A10 OE A7 A3 A0 GND Ground A15 A11 A18 NC A4 A1 NC Not Connected A16 A12 WE1 A8 A5 A2 A17 VCC I/O7 A9 WE3 I/O23 BLOCK DIAGRAM W E1 CS1 4 CS1 I/O6 I/O16 CS3 I/O22 I/O1 NC I/O5 I/O17 GND I/O21 I/O2 I/O3 I/O4 I/O18 I/O19 I/O20 11 22 33 44 55 W E3 CS3 W E4 CS4 66 512K x 8 512K x 8 512K x 8 512K x 8 8 8 8 8 I/O16-23 I/O8-15 I/O0-7 FIG. 3 W E2 CS2 OE A0-18 I/O24-31 PIN CONFIGURATION FOR WS512K32-XG4TX Low Profile TOP VIEW NC A0 A1 A2 A3 A4 A5 CS1 GND CS3 WE A6 A7 A8 A9 A10 VCC PIN DESCRIPTION I/O0-31 Data Inputs/Outputs A0-18 Address Inputs WE Write Enable 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 CS1-4 Chip Selects OE Output Enable VCC Power Supply GND Ground NC Not Connected BLOCK DIAGRAM CS1 CS 2 CS 3 CS 4 WE OE A0-18 512K x 8 512K x 8 512K x 8 512K x 8 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 8 8 8 8 VCC A11 A12 A13 A14 A15 A16 CS2 OE CS4 A17 A18 NC NC NC NC NC SRAM MODULES I/O0 I/O0-7 White Microelectronics * Phoenix, AZ * (602) 437-1520 2 I/O8-15 I/O16-23 I/O24-31 WS512K32-XXX FIG. 4 NC A0 A1 A2 A3 A4 A5 CS3 GND CS4 WE1 A6 A7 A8 A9 A10 VCC PIN DESCRIPTION I/O0-31 Data Inputs/Outputs 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 A0-18 Address Inputs WE1-4 Write Enables 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 0.940" The White 68 lead G2/G2T CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2/ G2T has the TCE and lead inspection advantage of the CQFP form. W E1 CS1 Chip Selects OE Output Enable VCC Power Supply GND Ground NC Not Connected BLOCK DIAGRAM W E2 CS2 W E3 CS3 W E4 CS4 OE A0-18 A16 CS1 OE CS2 A17 WE2 WE3 WE4 A18 NC NC A15 A14 A13 A12 CS1-4 512K x 8 8 I/O0-7 3 512K x 8 8 I/O8-15 512K x 8 8 I/O16-23 512K x 8 8 I/O24-31 White Microelectronics * Phoenix, AZ * (602) 437-1520 4 SRAM MODULES A11 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 VCC I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 PIN CONFIGURATION FOR WS512K32-XG2X AND WS512K32-XG2TX TOP VIEW WS512K32-XXX CAPACITANCE (TA = +25C) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Max Unit TA -55 +125 C Parameter TSTG -65 +150 C OE capacitance COE VIN = 0 V, f = 1.0 MHz WE1-4 capacitance HIP (PGA) CQFP G4 CQFP G2 CQFP G2T CWE VIN = 0 V, f = 1.0 MHz Operating Temperature Storage Temperature Signal Voltage Relative to GND VG Junction Temperature TJ Supply Voltage -0.5 VCC -0.5 Vcc+0.5 V 150 C 7.0 V RECOMMENDED OPERATING CONDITIONS Parameter 4 Symbol Min Max Unit Supply Voltage VCC 4.5 5.5 V Input High Voltage VIH 2.2 V CC + 0.3 V Input Low Voltage VIL -0.5 +0.8 V Operating Temp (Mil) TA -55 +125 C OE SRAM MODULES H L L L X L H X WE X H H L Mode Standby Read Out Disable Write Unit 50 pF pF 20 50 20 15 CCS VIN = 0 V, f = 1.0 MHz 20 pF Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHz 20 pF Address input capacitance CAD VIN = 0 V, f = 1.0 MHz 50 pF LOW CAPACITANCE CQFP (TA = +25C) Power High Z Data Out High Z Data In Max CS1-4 capacitance Parameter Data I/O Conditions This parameter is guaranteed by design but not tested. TRUTH TABLE CS Symbol Standby Active Active Active Symbol Conditions Max Unit OE capacitance COE VIN = 0 V, f = 1.0 MHz 32 pF CQFP G4 capacitance CWE VIN = 0 V, f = 1.0 MHz 32 pF CS1-4 capacitance CCS VIN = 0 V, f = 1.0 MHz 15 pF Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHz 15 pF Address input capacitance CAD VIN = 0 V, f = 1.0 MHz 32 pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 5.0V, V SS = 0V, TA = -55C to +125C) Parameter Symbol Conditions Units Min Max 10 A Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 A ICC x 32 CS = VIL , OE = VIH, f = 5MHz, Vcc = 5.5 200 mA Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 4.0 mA Output Low Voltage VOL IOL = 2.1mA, VCC = 4.5 0.4 Output High Voltage VOH IOH = -1.0mA, VCC = 4.5 Operating Supply Current x 32 Mode 2.4 V V NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V DATA RETENTION CHARACTERISTICS (TA = -55C to +125C) Parameter Symbol Conditions Units Min V DR CS V CC -0.2V I CCDR1 V CC = 3V Data Retention Supply Voltage Data Retention Current White Microelectronics * Phoenix, AZ * (602) 437-1520 4 Typ Max 5.5 V 0.4 1.6 mA 2.0 WS512K32-XXX AC CHARACTERISTICS (VCC = 5.0V, VSS =0V, TA = -55C to +125C) Parameter Symbol Read Cycle -70 Min Read Cycle Time t RC Address Access Time t AA -85 Max 70 Min -100 Max 85 Min -120 Max 100 70 85 Min Units Max 120 100 ns 120 ns Output Hold from Address Change t OH Chip Select Access Time t ACS 70 85 100 120 ns Output Enable to Output Valid t OE 35 40 50 60 ns Chip Select to Output in Low Z t CLZ 1 10 10 10 10 Output Enable to Output in Low Z t OLZ 1 5 5 5 5 Chip Disable to Output in High Z t CHZ 1 25 25 35 35 ns Output Disable to Output in High Z t OHZ 1 25 25 35 35 ns 5 5 5 5 ns ns ns 1. This parameter is guaranteed by design but not tested. 4 Parameter Symbol Write Cycle -70 Min -85 Max Min -100 Max Min -120 Max Min Units Max Write Cycle Time t WC 70 85 100 120 ns Chip Select to End of Write t CW 60 75 80 100 ns Address Valid to End of Write t AW 60 75 80 100 ns Data Valid to End of Write t DW 30 30 40 40 ns Write Pulse Width t WP 50 50 60 60 ns Address Setup Time t AS 0 0 0 0 ns Address Hold Time t AH 5 5 5 5 ns Output Active from End of Write t OW 1 5 5 5 5 Write Enable to Output in High Z t WHZ 1 Data Hold from Write Time 25 t DH 0 25 0 ns 35 0 35 ns 0 ns 1. This parameter is guaranteed by design but not tested. FIG. 7 AC TEST CONDITIONS AC TEST CIRCUIT Parameter I OL Current Source VZ D.U.T. 1.5V (Bipolar Supply) C eff = 50 pf I OH Current Source 5 Typ Unit Input Pulse Levels VIL = 0, VIH = 3.0 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V NOTES: V Z is programmable from -2V to +7V. I OL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 . V Z is typically the midpoint of VOH and VOL . I OL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. White Microelectronics * Phoenix, AZ * (602) 437-1520 SRAM MODULES AC CHARACTERISTICS (VCC = 5.0V, VSS =0V, TA = -55C to +125C) WS512K32-XXX FIG. 6 TIMING WAVEFORM - READ CYCLE tRC ADDRESS tAA CS tRC tCHZ tACS ADDRESS tCLZ tAA OE tOE tOLZ tOH DATA I/O PREVIOUS DATA VALID DATA I/O DATA VALID tOHZ DATA VALID HIGH IMPEDANCE READ CYCLE 1 (CS = OE = VIL, WE = VIH) 4 READ CYCLE 2 (WE = VIH) SRAM MODULES FIG. 7 WRITE CYCLE - WE CONTROLLED tWC ADDRESS tAW tAH tCW CS tAS tWP WE tOW tWHZ tDW DATA I/O tDH DATA VALID WRITE CYCLE 1, WE CONTROLLED FIG. 8 WRITE CYCLE - CS CONTROLLED tWC WS32K32-XHX ADDRESS tAS tAW tAH tCW CS tWP WE tDW DATA I/O DATA VALID WRITE CYCLE 2, CS CONTROLLED White Microelectronics * Phoenix, AZ * (602) 437-1520 6 tDH WS512K32-XXX PACKAGE 401: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H) 30.1 (1.185) 0.38 (0.015) SQ PIN 1 IDENTIFIER SQUARE PAD ON BOTTOM 25.4 (1.0) TYP 6.22 (0.245) MAX 3.81 (0.150) 0.1 (0.005) 1.27 (0.050) 0.1 (0.005) 15.24 (0.600) TYP 1.27 (0.050) TYP DIA 0.46 (0.018) 0.05 (0.002) DIA 25.4 (1.0) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 402: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H2) 35.2 (1.385) 0.38 (0.015) SQ PIN 1 IDENTIFIER SQUARE PAD ON BOTTOM 25.4 (1.0) TYP 5.7 (0.223) MAX 3.81 (0.150) 0.1 (0.005) 1.27 (0.050) 0.1 (0.005) 0.76 (0.030) 0.1 (0.005) 2.54 (0.100) TYP 15.24 (0.600) TYP 1.27 (0.050) TYP DIA 0.46 (0.018) 0.05 (0.002) DIA 25.4 (1.0) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 7 White Microelectronics * Phoenix, AZ * (602) 437-1520 SRAM MODULES 0.76 (0.030) 0.1 (0.005) 2.54 (0.100) TYP 4 WS512K32-XXX PACKAGE 502: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G4T) 39.6 (1.56) 0.38 (0.015) SQ PIN 1 IDENTIFIER 3.56 (0.140) MAX Pin 1 12.7 (0.500) 0.5 (0.020) 4 PLACES 4 SRAM MODULES 5.1 (0.200) 0.25 (0.010) 4 PLACES 0.38 (0.015) 0.08 (0.003) 68 PLACES 1.27 (0.050) TYP 0.25 (0.010) 0.05 (0.002) 38 (1.50) TYP 4 PLACES ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Microelectronics * Phoenix, AZ * (602) 437-1520 8 WS512K32-XXX PACKAGE 500: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2) 25.1 (0.990) 0.25 (0.010) SQ 5.1 (0.200) MAX 22.4 (0.880) 0.25 (0.010) SQ 0.25 (0.010) 0.1 (0.002) 0.25 (0.010) REF Pin 1 R 0.25 (0.010) 24.0 (0.946) 0.25 (0.010) 0.25 (0.010) 0.127 (0.005) 1 / 7 1.0 (0.040) 0.127 (0.005) 23.87 (0.940) REF DETAIL A 1.27 (0.050) TYP 4 SEE DETAIL "A" 20.3 (0.800) REF The White 68 lead G2 CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2 has the TCE and lead inspection advantage of the CQFP form. 0.940" TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 9 White Microelectronics * Phoenix, AZ * (602) 437-1520 SRAM MODULES 0.38 (0.015) 0.05 (0.002) WS512K32-XXX PACKAGE 509: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2T) 25.15 (0.990) 0.26 (0.010) SQ 4.57 (0.180) MAX 22.36 (0.880) 0.26 (0.010) SQ 0.27 (0.011) 0.04 (0.002) 0.25 (0.010) REF Pin 1 R 0.25 (0.010) 24.03 (0.946) 0.26 (0.010) 0.19 (0.007) 0.06 (0.002) 1 / 7 1.0 (0.040) 0.127 (0.005) 23.87 (0.940) REF 4 DETAIL A 1.27 (0.050) TYP SEE DETAIL "A" SRAM MODULES 0.38 (0.015) 0.05 (0.002) 20.3 (0.800) REF The White 68 lead G2T CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead inspection advantage of the CQFP form. 0.940" TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Microelectronics * Phoenix, AZ * (602) 437-1520 10 WS512K32-XXX ORDERING INFORMATION W S 512K 32 X - XXX X X X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads SPECIAL PROCESSING: E = Epitaxial Layer DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened -55C to +125C I = Industrial -40C to 85C C = Commercial 0C to +70C PACKAGE TYPE: H = Ceramic Hex-In-line Package, HIP (Package 401) 4 H2 = Ceramic Hex-In-line Package, HIP (Package 402) G2T = 22.4mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 509) G4T = 40mm Low Profile CQFP (Package 502) ACCESS TIME (ns) IMPROVEMENT MARK: N = No Connect at pin 21 and 39 in HIP for Upgrades F = Low Capacitance CQFP ORGANIZATION, 512Kx32 User configurable as 1Mx16 or 2Mx8 SRAM WHITE MICROELECTRONICS 11 White Microelectronics * Phoenix, AZ * (602) 437-1520 SRAM MODULES G2 = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 500) WS512K32-XXX DEVICE TYPE 4 SPEED PACKAGE SMD NO. SRAM MODULES 512K x 32 SRAM Module 120ns 66 pin HIP (H) 5962-94611 01H_X 512K x 32 SRAM Module 100ns 66 pin HIP (H) 5962-94611 02H_X 512K x 32 SRAM Module 85ns 66 pin HIP (H) 5962-94611 03H_X 512K x 32 SRAM Module 70ns 66 pin HIP (H) 5962-94611 04H_X 512K x 32 SRAM Module 120ns 66 pin HIP (H2) 5962-94611 01HXX 512K x 32 SRAM Module 100ns 66 pin HIP (H2) 5962-94611 02HXX 512K x 32 SRAM Module 85ns 66 pin HIP (H2) 5962-94611 03HXX 512K x 32 SRAM Module 70ns 66 pin HIP (H2) 5962-94611 04HXX 512K x 32 SRAM Module 120ns 68 pin CQFP Low Profile (G4T) 5962-94611 01HZX 512K x 32 SRAM Module 100ns 68 pin CQFP Low Profile (G4T) 5962-94611 02HZX 512K x 32 SRAM Module 85ns 68 pin CQFP Low Profile (G4T) 5962-94611 03HZX 512K x 32 SRAM Module 70ns 68 pin CQFP Low Profile (G4T) 5962-94611 04HZX 512K x 32 SRAM Module 120ns 68 pin CQFP/J (G2) 5962-94611 01HMX 512K x 32 SRAM Module 100ns 68 pin CQFP/J (G2) 5962-94611 02HMX 512K x 32 SRAM Module 85ns 68 pin CQFP/J (G2) 5962-94611 03HMX 512K x 32 SRAM Module 70ns 68 pin CQFP/J (G2) 5962-94611 04HMX 512K x 32 SRAM Module 120ns 68 lead CQFP/J (G2T) 5962-94611 01HMX 512K x 32 SRAM Module 100ns 68 lead CQFP/J (G2T) 5962-94611 02HMX 512K x 32 SRAM Module 85ns 68 lead CQFP/J (G2T) 5962-94611 03HMX 512K x 32 SRAM Module 70ns 68 lead CQFP/J (G2T) 5962-94611 04HMX White Microelectronics * Phoenix, AZ * (602) 437-1520 12